CN103548158B - 发光元件的制造方法以及发光元件 - Google Patents

发光元件的制造方法以及发光元件 Download PDF

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Publication number
CN103548158B
CN103548158B CN201280024069.7A CN201280024069A CN103548158B CN 103548158 B CN103548158 B CN 103548158B CN 201280024069 A CN201280024069 A CN 201280024069A CN 103548158 B CN103548158 B CN 103548158B
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CN
China
Prior art keywords
light
vertical hole
emitting element
emitting component
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280024069.7A
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English (en)
Chinese (zh)
Other versions
CN103548158A (zh
Inventor
会田英雄
青田奈津子
武田秀俊
本庄庆司
星野仁志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Adamant Namiki Precision Jewel Co Ltd
Original Assignee
Namiki Precision Jewel Co Ltd
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Namiki Precision Jewel Co Ltd, Disco Corp filed Critical Namiki Precision Jewel Co Ltd
Publication of CN103548158A publication Critical patent/CN103548158A/zh
Application granted granted Critical
Publication of CN103548158B publication Critical patent/CN103548158B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
CN201280024069.7A 2011-05-23 2012-04-03 发光元件的制造方法以及发光元件 Expired - Fee Related CN103548158B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-114636 2011-05-23
JP2011114636 2011-05-23
PCT/JP2012/059067 WO2012160880A1 (ja) 2011-05-23 2012-04-03 発光素子の製造方法および発光素子

Publications (2)

Publication Number Publication Date
CN103548158A CN103548158A (zh) 2014-01-29
CN103548158B true CN103548158B (zh) 2016-10-19

Family

ID=47216967

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280024069.7A Expired - Fee Related CN103548158B (zh) 2011-05-23 2012-04-03 发光元件的制造方法以及发光元件

Country Status (7)

Country Link
US (1) US9065032B2 (enExample)
EP (1) EP2717335A4 (enExample)
JP (2) JPWO2012160880A1 (enExample)
KR (1) KR101516609B1 (enExample)
CN (1) CN103548158B (enExample)
TW (1) TWI495148B (enExample)
WO (1) WO2012160880A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2951854A1 (de) * 2013-01-30 2015-12-09 Fraunhofer-ges. zur Förderung der Angewandten Forschung E.V. Verfahren zum herstellen einer epitaktischen halbleiterschicht
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
JP6704699B2 (ja) * 2015-09-11 2020-06-03 アルパッド株式会社 半導体発光素子及びその製造方法
CN108732652A (zh) * 2018-05-25 2018-11-02 厦门大学 一种氮化物光子晶体及其制备方法
DE102020114195A1 (de) * 2020-05-27 2021-12-02 Lpkf Laser & Electronics Aktiengesellschaft Verfahren zum Einbringen einer Ausnehmung in ein Substrat

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007089077A1 (en) * 2006-02-01 2007-08-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method of manufacturing the same
CN101106103A (zh) * 2006-07-14 2008-01-16 优迪那半导体有限公司 发光元件的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883929A (ja) 1994-09-14 1996-03-26 Rohm Co Ltd 半導体発光素子、およびその製造方法
JP3691934B2 (ja) * 1996-06-17 2005-09-07 株式会社東芝 窒化ガリウム系化合物半導体発光デバイス及びその製造方法
JP3706448B2 (ja) 1996-12-06 2005-10-12 ローム株式会社 半導体発光素子
JPH10308640A (ja) 1997-05-07 1998-11-17 Matsushita Electric Ind Co Ltd 圧電デバイスの製造方法
JP4264992B2 (ja) 1997-05-28 2009-05-20 ソニー株式会社 半導体装置の製造方法
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
JP3362836B2 (ja) * 1997-12-26 2003-01-07 日亜化学工業株式会社 光半導体素子の製造方法
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
JP4880820B2 (ja) * 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
WO2003044872A1 (fr) * 2001-11-19 2003-05-30 Sanyo Electric Co., Ltd. Dispositif electroluminescent semi-conducteur compose et son procede de fabrication
JP2004104100A (ja) * 2002-09-10 2004-04-02 Arima Optoelectronics Corp 発光ダイオード及びその製造方法
JP2004272014A (ja) 2003-03-10 2004-09-30 Seiko Epson Corp 光通信モジュールの製造方法、光通信モジュール、及び電子機器
JP2004288839A (ja) * 2003-03-20 2004-10-14 Fujikura Ltd 反応性イオンエッチング装置
JP4182841B2 (ja) 2003-08-28 2008-11-19 セイコーエプソン株式会社 単結晶基板の加工方法
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
JP4766966B2 (ja) * 2005-09-07 2011-09-07 京セラ株式会社 発光素子
KR100716790B1 (ko) 2005-09-26 2007-05-14 삼성전기주식회사 질화갈륨계 반도체 발광소자 및 그 제조방법
US8664664B2 (en) 2006-01-10 2014-03-04 Cree, Inc. Silicon carbide dimpled substrate
JP5232375B2 (ja) * 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
KR101364718B1 (ko) * 2007-02-15 2014-02-19 서울바이오시스 주식회사 발광 소자 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007089077A1 (en) * 2006-02-01 2007-08-09 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device and method of manufacturing the same
CN101106103A (zh) * 2006-07-14 2008-01-16 优迪那半导体有限公司 发光元件的制造方法

Also Published As

Publication number Publication date
CN103548158A (zh) 2014-01-29
EP2717335A4 (en) 2014-12-03
TWI495148B (zh) 2015-08-01
JP6023270B2 (ja) 2016-11-09
US20140217458A1 (en) 2014-08-07
US9065032B2 (en) 2015-06-23
JPWO2012160880A1 (ja) 2014-07-31
TW201251106A (en) 2012-12-16
KR101516609B1 (ko) 2015-05-04
WO2012160880A1 (ja) 2012-11-29
KR20140006986A (ko) 2014-01-16
EP2717335A1 (en) 2014-04-09
JP2015173293A (ja) 2015-10-01

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Legal Events

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C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan, Xintian, 3 feet 8, 22

Co-patentee after: Disco Corp.

Patentee after: Andaman nanoscale precision gem Co., Ltd.

Address before: Tokyo, Japan, Xintian, 3 feet 8, 22

Co-patentee before: Disco Corp.

Patentee before: Namiki Precision Jewel Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20161019

Termination date: 20190403