JPWO2011049018A1 - 発光素子、およびそれを備えた投写型表示装置 - Google Patents
発光素子、およびそれを備えた投写型表示装置 Download PDFInfo
- Publication number
- JPWO2011049018A1 JPWO2011049018A1 JP2011537225A JP2011537225A JPWO2011049018A1 JP WO2011049018 A1 JPWO2011049018 A1 JP WO2011049018A1 JP 2011537225 A JP2011537225 A JP 2011537225A JP 2011537225 A JP2011537225 A JP 2011537225A JP WO2011049018 A1 JPWO2011049018 A1 JP WO2011049018A1
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- pitch
- emitting element
- photonic crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010287 polarization Effects 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000004038 photonic crystal Substances 0.000 description 80
- 238000000605 extraction Methods 0.000 description 35
- 239000011295 pitch Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2073—Polarisers in the lamp house
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B33/00—Colour photography, other than mere exposure or projection of a colour film
- G03B33/10—Simultaneous recording or projection
- G03B33/12—Simultaneous recording or projection using beam-splitting or beam-combining systems, e.g. dichroic mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
- H04N9/3167—Modulator illumination systems for polarizing the light beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/868—Arrangements for polarized light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Projection Apparatus (AREA)
- Polarising Elements (AREA)
Abstract
Description
0.4<(p1/λ)<0.8<(p2/λ)<1.2 (1)
を満たすことになる。
3 基板
4 反射層
5 負電極
6 正電極
10,20 発光部
11,21 p型半導体層
12,22 活性層
13a−13d,23 n型半導体層
14a−14d,24 フォトニック結晶
15a,15b 凸部
15c,15d 凹部
26 偏光選択層
30 LEDプロジェクタ
31R,31G,31B 光源
32R,32G,32B レンズ
33R,33G,33B 表示素子
34 クロスダイクロイックプリズム
35 第1の膜
36 第2の膜
37 投写レンズ
Claims (10)
- 基板と、該基板の上に設けられ、該基板に略平行な第1の方向の偏光成分の光強度が他の方向の偏光成分の光強度よりも大きい光を出射する発光部と、を有し、
前記発光部が、光を発生させる活性層と、該活性層に対して前記発光部の出射側に設けられ、前記活性層に略平行な面に沿って2次元的に配列された複数の構造体と、を有し、
前記活性層に平行な断面において、前記各構造体の前記第1の方向の幅と、前記各構造体の、前記第1の方向と直交する第2の方向の幅とが互いに異なり、
前記複数の構造体は、前記第1の方向に第1のピッチで周期的に配列され、前記第2の方向に、前記第1のピッチとは異なる第2のピッチで周期的に配列されている、発光素子。 - 前記各構造体は、前記第1のピッチに対する前記第1の方向の幅の比が略0.5であり、前記第2のピッチに対する前記第2の方向の幅の比が略0.5である、請求項1に記載の発光素子。
- 前記発光部から出射される光の真空中での波長をλ、前記第1のピッチをp1、前記第2のピッチをp2とすると、前記波長λに対する前記第1のピッチp1の比(p1/λ)と、前記波長λに対する前記第2のピッチp2の比(p2/λ)とが、
0.4<(p1/λ)<0.8<(p2/λ)<1.2
の関係を満たす、請求項1または2に記載の発光素子。 - 前記発光部が、前記活性層を含む複数の層で構成された半導体層を有し、該半導体層の光の出射面側に前記複数の構造体が形成されている、請求項1から3のいずれか1項に記載の発光素子。
- 前記半導体層の主面が非極性面または半極性面である、請求項4に記載の発光素子。
- 前記発光部が、前記半導体層の光の出射面側に設置され、前記第1の方向に平行な偏光成分を透過させ、前記他の方向の偏光成分を反射させるようになっている偏光子をさらに有する、請求項4または5に記載の発光素子。
- 前記各構造体が、前記半導体層の光の出射面側に形成された凸部である、請求項4から6のいずれか1項に記載の発光素子。
- 前記各構造体が、前記半導体層の光の出射面側に形成された凹部である、請求項4から6のいずれか1項に記載の発光素子。
- 前記半導体層がIII族窒化物を含む、請求項4から8のいずれか1項に記載の発光素子。
- 請求項1から9のいずれか1項に記載の発光素子を含む光源と、画像信号に応じて前記光源から出射される光を変調する光変調素子と、該光変調素子によって変調された光を投写する投写光学系と、を備えた投写型表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011537225A JP5803672B2 (ja) | 2009-10-23 | 2010-10-15 | 発光素子、およびそれを備えた投写型表示装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009244434 | 2009-10-23 | ||
JP2009244434 | 2009-10-23 | ||
PCT/JP2010/068153 WO2011049018A1 (ja) | 2009-10-23 | 2010-10-15 | 発光素子、およびそれを備えた投写型表示装置 |
JP2011537225A JP5803672B2 (ja) | 2009-10-23 | 2010-10-15 | 発光素子、およびそれを備えた投写型表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011049018A1 true JPWO2011049018A1 (ja) | 2013-03-14 |
JP5803672B2 JP5803672B2 (ja) | 2015-11-04 |
Family
ID=43900244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011537225A Active JP5803672B2 (ja) | 2009-10-23 | 2010-10-15 | 発光素子、およびそれを備えた投写型表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9028070B2 (ja) |
JP (1) | JP5803672B2 (ja) |
CN (1) | CN102576784B (ja) |
WO (1) | WO2011049018A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103650176B (zh) | 2011-07-12 | 2016-12-14 | 丸文株式会社 | 发光元件及其制造方法 |
JP2013125102A (ja) * | 2011-12-13 | 2013-06-24 | Samsung Yokohama Research Institute Co Ltd | 微細周期構造を用いた光学フィルタ、偏光素子及び光学シャッタ |
TW201447377A (zh) * | 2013-06-07 | 2014-12-16 | Hon Hai Prec Ind Co Ltd | 雷射合光裝置 |
EP2955762B1 (en) | 2013-07-17 | 2017-09-13 | Marubun Corporation | Semiconductor light-emitting element and production method thereof |
JP5757512B1 (ja) | 2014-03-06 | 2015-07-29 | 丸文株式会社 | 深紫外led及びその製造方法 |
USD765754S1 (en) * | 2014-06-26 | 2016-09-06 | Emcore Corporation | Wafer level focus lens assembly |
CN104409646A (zh) * | 2014-11-13 | 2015-03-11 | 合肥鑫晟光电科技有限公司 | 一种发光器件及其制备方法、显示装置 |
JP5999800B1 (ja) * | 2015-01-16 | 2016-09-28 | 丸文株式会社 | 深紫外led及びその製造方法 |
US9703028B2 (en) | 2015-04-03 | 2017-07-11 | Moxtek, Inc. | Wire grid polarizer with phosphonate protective coating |
DE102015122627A1 (de) * | 2015-05-28 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung und Tiefenerfassungssystem |
CN108292695B (zh) | 2015-09-03 | 2021-01-22 | 丸文株式会社 | 深紫外led及其制造方法 |
US10056526B2 (en) | 2016-03-30 | 2018-08-21 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
WO2019146737A1 (ja) | 2018-01-26 | 2019-08-01 | 丸文株式会社 | 深紫外led及びその製造方法 |
KR20200017017A (ko) * | 2018-08-07 | 2020-02-18 | 삼성전자주식회사 | 구조광 프로젝터 및 이를 포함하는 전자 장치 |
JP7188690B2 (ja) * | 2018-08-22 | 2022-12-13 | セイコーエプソン株式会社 | プロジェクター |
CN111430516B (zh) * | 2020-03-24 | 2021-10-22 | 纳晶科技股份有限公司 | 量子点发光装置以及显示装置 |
CN112882287A (zh) * | 2021-01-15 | 2021-06-01 | 北海惠科光电技术有限公司 | 一种背光模组和显示设备 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
JP2006267417A (ja) * | 2005-03-23 | 2006-10-05 | Victor Co Of Japan Ltd | 投射表示装置 |
JP2006310737A (ja) * | 2005-03-29 | 2006-11-09 | Seiko Epson Corp | 発光素子、発光素子の製造方法及び画像表示装置 |
JP2007109689A (ja) | 2005-10-11 | 2007-04-26 | Seiko Epson Corp | 発光素子、発光素子の製造方法及び画像表示装置 |
KR100818451B1 (ko) * | 2006-07-03 | 2008-04-01 | 삼성전기주식회사 | 편광성을 갖는 반도체 발광 소자 |
JP2008053425A (ja) | 2006-08-24 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 半導体発光装置 |
KR100809236B1 (ko) | 2006-08-30 | 2008-03-05 | 삼성전기주식회사 | 편광 발광 다이오드 |
JP2008060433A (ja) | 2006-09-01 | 2008-03-13 | Rohm Co Ltd | レーザアレイ |
JP2008283037A (ja) * | 2007-05-11 | 2008-11-20 | Hitachi Cable Ltd | 発光素子 |
JP2008311317A (ja) * | 2007-06-12 | 2008-12-25 | Eudyna Devices Inc | 半導体発光素子 |
JP5104070B2 (ja) * | 2007-06-29 | 2012-12-19 | コニカミノルタホールディングス株式会社 | 2次元フォトニック結晶面発光レーザ |
JP2009111012A (ja) | 2007-10-26 | 2009-05-21 | Rohm Co Ltd | 半導体発光素子 |
JP2009206448A (ja) | 2008-02-29 | 2009-09-10 | Furukawa Electric Co Ltd:The | 面発光半導体レーザ素子 |
JP2010219307A (ja) * | 2009-03-17 | 2010-09-30 | Seiko Epson Corp | 光源装置、プロジェクター |
-
2010
- 2010-10-15 JP JP2011537225A patent/JP5803672B2/ja active Active
- 2010-10-15 WO PCT/JP2010/068153 patent/WO2011049018A1/ja active Application Filing
- 2010-10-15 US US13/503,297 patent/US9028070B2/en active Active
- 2010-10-15 CN CN201080047758.0A patent/CN102576784B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN102576784B (zh) | 2015-06-17 |
JP5803672B2 (ja) | 2015-11-04 |
US9028070B2 (en) | 2015-05-12 |
WO2011049018A1 (ja) | 2011-04-28 |
CN102576784A (zh) | 2012-07-11 |
US20120224147A1 (en) | 2012-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5803672B2 (ja) | 発光素子、およびそれを備えた投写型表示装置 | |
US7965035B2 (en) | Light-emitting device, method for manufacturing light-emitting device, and image display apparatus | |
JP6935657B2 (ja) | 発光装置およびプロジェクター | |
JP7188689B2 (ja) | 発光装置およびプロジェクター | |
JP2020057640A (ja) | 発光装置およびプロジェクター | |
JP2022011468A (ja) | 発光装置およびプロジェクター | |
JP4661038B2 (ja) | 光源装置、光源装置の製造方法、投射型表示装置 | |
JP6981444B2 (ja) | 発光装置、発光装置の製造方法、およびプロジェクター | |
JP2020161622A (ja) | 発光装置およびプロジェクター | |
JP5582147B2 (ja) | 発光素子および該発光素子を用いた画像表示装置 | |
US8779454B2 (en) | Light emitting element and image display device using the light emitting element | |
JP2022081925A (ja) | 発光装置およびプロジェクター | |
JP5044992B2 (ja) | 発光素子及びプロジェクタ | |
JP2022096789A (ja) | 発光装置およびプロジェクター | |
JP2022063970A (ja) | 発光装置およびプロジェクター | |
JP5582148B2 (ja) | 発光素子および該発光素子を用いた画像表示装置 | |
JP2022026489A (ja) | 発光装置およびプロジェクター | |
JP2020106732A (ja) | プロジェクター | |
JP2020161620A (ja) | 発光装置およびプロジェクター | |
US11803115B2 (en) | Light-emitting device and projector | |
US20230139048A1 (en) | Light-emitting device and projector | |
JP2021125622A (ja) | 発光装置およびプロジェクター | |
JP2021141202A (ja) | 発光装置およびプロジェクター | |
JP2022082063A (ja) | 発光装置およびプロジェクター | |
JP2023128375A (ja) | 発光装置、プロジェクター、およびディスプレイ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130909 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20140425 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150817 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5803672 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |