JPWO2010079831A1 - 半導体パッケージの製造方法、半導体封止方法及び溶剤型半導体封止エポキシ樹脂組成物 - Google Patents
半導体パッケージの製造方法、半導体封止方法及び溶剤型半導体封止エポキシ樹脂組成物 Download PDFInfo
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- JPWO2010079831A1 JPWO2010079831A1 JP2010545795A JP2010545795A JPWO2010079831A1 JP WO2010079831 A1 JPWO2010079831 A1 JP WO2010079831A1 JP 2010545795 A JP2010545795 A JP 2010545795A JP 2010545795 A JP2010545795 A JP 2010545795A JP WO2010079831 A1 JPWO2010079831 A1 JP WO2010079831A1
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- epoxy resin
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- resin
- semiconductor chip
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Abstract
Description
ング剤としては、例えば、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルトリエトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリエトキシシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン等が挙げられ、これらは単独で使用できるほか、2種以上を組み合わせて使用することが出来る。
接着強度(N/mm2)
PETフィルム上に120℃/3minの硬化条件で20μm厚さの接着剤層を形成させた後にPETフィルムとともに2×2mmにカットした。つぎにPETフィルムから接着剤層をはがし、これを、表面にポリイミド(PIX1400日立化成デュポン製)がコートされた2枚のシリコンチップ(2×2mmのものと5×5mmのもの)の間に挟みこみ、240℃/10N/5secで熱圧着後、150℃/1hの条件で後硬化して試験片を作成した。この試験片を、85℃/湿度85%の恒温高湿槽に24h放置した後、260℃での接着強度を測定した。比較例2の組成物も同様にして接着強度を測定した。
エポキシ樹脂(1):1,6−ビス(2,3−エポキシプロポキシ)ナフタレン
エポキシ樹脂(2):ビスフェノールA型ジグリシジルエーテル
酸無水物 :トリアラルキルテトラヒドロ無水フタル酸
ノボラック樹脂(1):フェノールノボラック樹脂(軟化点70〜120℃)
ノボラック樹脂(2):ナフトールノボラック樹脂(軟化点70〜120℃)
シリカフィラー(1):平均粒径0.5μm(球状溶融シリカ)
シリカフィラー(2):平均粒径2.0μm(球状溶融シリカ)
シランカップリング剤:エポキシシラン
シート化剤:フェノキシ樹脂
硬化促進剤:イミダゾール系硬化促進剤(カプセル型潜在性硬化促進剤)
溶剤(1):シクロペンタノン
溶剤(2):酢酸ブチルセロソルブ
Claims (14)
- 溶剤型半導体封止エポキシ樹脂組成物を半導体チップ及び回路基板からなる群から選択される第一の部材に塗布する工程(1)、塗布された前記組成物から溶剤を揮発させ組成物を乾燥する工程(2)、塗布され乾燥された該組成物を介して第一の部材と、半導体チップ及び回路基板からなる群から選択され、かつ第一の部材と半導体チップ/回路基板の組又は半導体チップ/半導体チップの組となる第二の部材とを、熱圧着する工程(3)、を含むことを特徴とする半導体パッケージの製造方法。
- 工程(2)において、60〜180℃で加熱乾燥させる請求項1記載の製造方法。
- 工程(2)において、30秒〜30分間加熱乾燥させる請求項1又は2記載の製造方法。
- 回路基板は、樹脂基板、セラミック基板及びシリコン基板からなる群から選択される少なくとも1種である請求項1〜3のいずれか記載の製造方法。
- 工程(3)において、金属製バンプとパッドとを接合する請求項1〜4のいずれか記載の製造方法。
- 工程(3)において、25℃から150℃までの温度範囲にて、動的粘弾性測定装置を用いてせん断速度6.28rad/sで測定した該組成物の複素弾性率E*の大きさが500Pa以上である請求項1〜5のいずれか記載の製造方法。
- エポキシ樹脂(A)、硬化剤としての、前記エポキシ樹脂(A)中のエポキシ基のモル数に対するフェノール性水酸基のモル数が0.8〜1.2倍となる割合のフェノール類ノボラック樹脂(B)、硬化促進剤(C)及び溶剤(D)を必須成分とする溶剤型半導体封止エポキシ樹脂組成物を用いる請求項1〜6のいずれか記載の製造方法。
- 溶剤(D)として、エーテル類を用いる請求項7記載の製造方法。
- 溶剤型半導体封止エポキシ樹脂組成物を半導体チップ及び回路基板からなる群から選択される第一の部材に塗布する工程(1)、塗布された前記組成物から溶剤を揮発させ組成物を乾燥する工程(2)、塗布され乾燥された該組成物を介して第一の部材と、半導体チップ及び回路基板からなる群から選択され、かつ第一の部材と半導体チップ/回路基板の組となる、第二の部材とを、熱圧着する工程(3′)、を含むことを特徴とする半導体封止方法。
- エポキシ樹脂(A)、硬化剤としての、前記エポキシ樹脂(A)中のエポキシ基のモル数に対するフェノール性水酸基のモル数が0.8〜1.2倍となる割合のフェノール類ノボラック樹脂(B)、潜在性硬化促進剤(C′)及び溶剤(D)を必須成分とすることを特徴とする溶剤型半導体封止エポキシ樹脂組成物。
- エポキシ樹脂(A)は、ナフタレン型エポキシ樹脂、ビスフェノールA型エポキシ樹脂及びビスフェノールF型エポキシ樹脂からなる群から選択される少なくとも1種である請求項10記載の組成物。
- フェノール類ノボラック樹脂(B)は、フェノールノボラック樹脂、アラルキルフェノールノボラック樹脂、ナフトールノボラック樹脂及びテルペンフェノールノボラック樹脂からなる群から選択される少なくとも1種である請求項10又は11記載の組成物。
- さらに、無機フィラーを樹脂組成物固形分100重量部に対して30〜80重量部含有する請求項10〜12のいずれか記載の組成物。
- 溶剤(D)として、エーテル類を用いる請求項10〜13のいずれか記載の組成物。
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PCT/JP2010/050171 WO2010079831A1 (ja) | 2009-01-09 | 2010-01-08 | 半導体パッケージの製造方法、半導体封止方法及び溶剤型半導体封止エポキシ樹脂組成物 |
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CN103958602B (zh) * | 2011-11-29 | 2016-09-07 | 东丽株式会社 | 树脂组合物、树脂组合物片材、半导体器件及其制备方法 |
JP5961055B2 (ja) * | 2012-07-05 | 2016-08-02 | 日東電工株式会社 | 封止樹脂シート、電子部品パッケージの製造方法及び電子部品パッケージ |
MY178423A (en) | 2013-03-11 | 2020-10-13 | Lintec Corp | Pressure sensitive adhesive sheet and method of manufacturing processed device-related member |
CN105428263A (zh) * | 2015-12-16 | 2016-03-23 | 南通富士通微电子股份有限公司 | 半导体封装方法 |
DE102016101887B4 (de) * | 2016-02-03 | 2019-01-17 | Infineon Technologies Ag | Verfahren zum Herstellen eines Package mit Befestigung eines Chipbefestigungsmediums an einem bereits gekapselten elektronischen Chip |
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US10763130B2 (en) * | 2017-04-25 | 2020-09-01 | Microchip Technology Incorporated | Systems and methods for improved delamination characteristics in a semiconductor package |
WO2019142423A1 (ja) * | 2018-01-17 | 2019-07-25 | セメダイン株式会社 | 実装体 |
TW202116535A (zh) * | 2019-08-23 | 2021-05-01 | 日商長瀨化成股份有限公司 | 密封結構體之製造方法 |
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