JP2019019194A - 加圧実装用ncf - Google Patents
加圧実装用ncf Download PDFInfo
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- JP2019019194A JP2019019194A JP2017137794A JP2017137794A JP2019019194A JP 2019019194 A JP2019019194 A JP 2019019194A JP 2017137794 A JP2017137794 A JP 2017137794A JP 2017137794 A JP2017137794 A JP 2017137794A JP 2019019194 A JP2019019194 A JP 2019019194A
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- C—CHEMISTRY; METALLURGY
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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Abstract
Description
このフリップチップ法では、電極同士の接続部分を外部から保護し、ICチップと基板との線膨張係数の違いに起因する応力を緩和するために、通常、電極接続後に、アンダーフィル剤と呼ばれる液状の熱硬化性接着剤を半導体チップと基板との間に流し込み硬化させるようにする。
このため、NCP(Non Conductive Paste)と呼ばれる液状の接着剤、もしくは、NCF(Non Conductive Film)と呼ばれるフィルム状の接着剤を予め基板に塗布、もしくは、貼付し、その後、フィリップチップボンダー等による、加熱圧接(Thermal Compression Bonding:TCB)で樹脂を硬化させ、ICチップのバンプと基板の電極パッドとを接続する、いわゆる先入れ法が試みられている(特許文献1参照)。
(A)固形エポキシ樹脂、
(B)室温で液状であり、下記式1、式2の構造の少なくとも一方を含む芳香族アミン、
(D)質量平均分子量(Mw)が6000から100000の高分子樹脂を含み、
前記(A)成分のエポキシ樹脂のエポキシ当量が220〜340であり、
前記(A)成分100質量部に対し、前記(B)成分を6〜27質量部含有し、
前記(C)成分の含有量が、各成分の合計質量100質量部に対して、20〜65質量部であり、
前記(A)成分、および前記(D)の含有割合((A):(D))が、99:1〜65:35であり、
120℃における溶融粘度が100Pa・s以下であり、
260℃以上で5〜90秒間加熱した後の120℃における溶融粘度が200Pa・s以下であることを特徴とする加圧雰囲気下硬化用半導体封止先供給型フィルム。
本発明の加圧雰囲気下硬化用半導体封止先供給型フィルム(以下、加圧実装用NCFと記載する。)は、(A)固形エポキシ樹脂、(B)後述する特定の芳香族アミン、(C)シリカフィラー、および(D)後述する特定の高分子樹脂を含む。
(A)成分の固形エポキシ樹脂は、本発明の加圧実装用NCFの接着性に主として寄与する。
本発明において固形エポキシ樹脂とは常温で固形のエポキシ樹脂を意味する。(A)成分として、固形エポキシ樹脂を用いることにより、フィルム形成能力を付与できる。
上記の中でも、ビフェニルアラルキル型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂が、耐熱性、密着性、信頼性が優れるから好ましい。
なお、(A)成分の固形エポキシ樹脂として、上記のうちいずれか1種を使用してもよく、2種以上を併用してもよい。
(A)成分の固形エポキシ樹脂は、エポキシ当量が220〜310であることが好ましく、225〜290であることがより好ましい。
(B)成分の芳香族アミンは、室温で液状であり、下記式1、式2の構造の少なくとも一方を含む。
また、(B)成分の芳香族アミンが、上記式1、式2の構造の少なくとも一方を含むことにより、120℃における溶融粘度、および260℃以上で5〜90秒間加熱した後の120℃における溶融粘度を後述する条件に調整することができる。
(B)成分の芳香族アミンは、上記式1、式2の構造のうち、いずれか一方を含んでいてもよく、両方を含んでもよい。
(C)成分のシリカフィラーは、加圧実装用NCFにより実装された半導体パッケージの信頼性を向上させる目的で添加される。
加圧実装用NCFのフィルム形成性、および透明性の観点から、(C)成分のシリカフィラーの含有量は、加圧実装用NCFの各成分の合計質量100質量部に対して、20〜65質量部である。(C)成分の含有量が20質量部未満だと、加圧実装用NCFにより実装された半導体パッケージの信頼性が低下する。(C)成分の含有量が65質量部超だと、フィルム形成性、および加圧実装用NCFの透明性が低下する。
(C)成分の含有量は、加圧実装用NCFの各成分の合計質量100質量部に対して、
(C)成分のシリカフィラーは、平均粒径が1μm以下であることが、フィルム平滑性、フィルム透明性、チップダメージ低減のため好ましく、0.5μm以下であることがより好ましい。
(C)成分のシリカフィラーとして、シランカップリング剤等で表面処理が施されたものを使用してもよい。
(D)成分の高分子樹脂は、フィルム形成剤であり、加圧実装用NCFの強靭性に寄与する。(D)成分の高分子樹脂は、質量平均分子量(Mw)が6000から100000である。(D)成分の高分子樹脂のMwが6000未満だとフィルム形成性が悪化する。一方、(D)成分の高分子樹脂のMwが100000超だと、120℃における溶融粘度、および260℃以上で5〜90秒間加熱した後の120℃における溶融粘度が増加し、後述する条件を満たすことができず、プレッシャーオーブン(加圧加熱)実施時にボイドを抑制することができない。
(D)成分の高分子樹脂としては、結晶核が存在しないものが、加圧実装用NCFの透明性の観点から好ましい。
(D)成分の高分子樹脂としては、フェノキシ樹脂が好ましく、中でも、ビスフェノールF型構造を有するものがより好ましい。
(液状エポキシ樹脂)
本発明の加圧実装用NCFは、粘度調整の目的で、液状エポキシ樹脂を含有させてもよい。本発明において液状エポキシ樹脂とは常温で液状のエポキシ樹脂を意味する。具体的には、たとえば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂が挙げられる。
液状エポキシ樹脂を含有させる場合、その不純物濃度に留意する必要がある。また、液状エポキシ樹脂の含有量が多すぎると、加圧実装用NCFに流動性や柔軟性が付与され、取り扱い性が低下するため、液状エポキシ樹脂の含有量が多すぎないよう留意する必要がある。
本発明の加圧実装用NCFは、ICチップや基板に対する密着性を向上させる目的でカップリング剤を含有させてもよい。
カップリング剤としては、エポキシ基もしくは(メタ)アクリレート基を含有するものが好ましい。
本発明の加圧実装用NCFは、エポキシ樹脂の硬化促進剤を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、レオロジー調整剤を塗布適性、流動適性を調整する目的で必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、(C)成分のシリカフィラー、および任意成分の着色剤の分散性向上、沈降防止の目的で分散剤、沈降防止剤を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、消泡性調整の目的で消泡剤を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、着色目的で着色剤を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、表面状態、濡れ性の調整の目的で表面調整剤を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、弾性率、応力の調整の目的でエラストマー類を必要に応じて含有させてもよい。
本発明の加圧実装用NCFは、慣用の方法により製造することができる。例えば、溶剤の存在下または非存在下で、上記(A)成分〜(D)成分、さらに必要に応じて含有させるその他の成分を加熱真空混合ニーダーにより混合して樹脂組成物を調製する。
上記(A)成分〜(D)成分、さらに必要に応じて含有させるその他の成分が所望の含有割合となるように、所定の溶剤濃度に溶解し、それらを10〜80℃に加温された反応釜に所定量投入し、回転数100〜1000rpmで回転させながら、常圧混合を3時間行った後、真空下(最大1Torr)でさらに3〜60分混合攪拌することができる。
上記の手順で調製された樹脂組成物を溶剤で希釈してワニスとし、これを支持体の少なくとも片面に塗布し、乾燥させた後、支持体付の加圧実装用NCF、または、支持体から剥離した加圧実装用NCFとして提供することができる。
本発明の加圧実装用NCFは、120℃における溶融粘度が50Pa・s以下であることが好ましい。
本発明の加圧実装用NCFは、260℃以上で5〜90秒間加熱した後の120℃における溶融粘度が180Pa・s以下であることが好ましい。
本発明の加圧実装用NCFを用いて半導体パッケージを実装する場合、基板上の半導体チップを実装する位置へ加圧実装用NCFを所望の形状にてラミネータ等で貼り付ける。
また、半導体回路が形成されたウエハ上へラミネータ等にて貼り付けた後、ダイサー等により個々のチップへ切り出すこともできる。ラミネーション条件は特に限定されないが、加熱、加圧、減圧などの条件を適宜組み合わせることができる。特に微細な凹凸へボイド等の欠陥なく貼り付けるためには、加熱温度は40〜120℃、減圧度は1hPa以下、圧力は0.01MPa以上が好ましい。
加圧実装用NCFをラミネーション等により貼り付けた後、基板上のチップ搭載位置へチップマウントした後、所定の温度に加熱してリフローする。リフロー時の加熱温度は、220〜280℃であることが好ましい。次に、プレッシャーオーブンを用いて加圧加熱硬化を実施する。加圧加熱硬化の加熱温度は165〜185℃、圧力は0.2〜1.0MPaとし、この条件で30分以上4時間以下で加圧加熱硬化する。
加圧実装用NCFをラミネーション等により貼り付けた後、フリップチップボンダー等により加熱圧接(TCB)によって基板上のチップ搭載位置へチップマウントした後、上記と同様の手順で加圧実装を実施してもよい。TCB条件は特に限定されないが、半導体チップサイズ、バンプ材質、バンプ数等によりTCB条件を適宜選択することができる。
加熱温度は50〜300℃、時間0.5〜20秒、圧力は5〜450Nであることが好ましい。
下記表に示す配合割合となるように各原料を混合し、混合物が50wt%の濃度となるように溶剤中に溶解・分散させて塗工用ワニスを調製した。溶剤はメチルエチルケトン(和光純薬工業株式会社製)を使用した。
離型剤を塗布したPET(ポリエチレンテレフタレート)フィルム上へ塗工用ワニスを約20μmの乾燥厚みとなるよう塗工した。その後、塗工用ワニスを塗工した離型剤処理されたPET(ポリエチレンテレフタレート)フィルムを乾燥機中で80℃にて10分間乾燥して溶剤を除去し、20μm厚の加圧実装用NCFを作製した。なお、表中の各組成に関する数値は質量部を表している。
(A)固形エポキシ樹脂
(A−1)ビフェニルアラルキル型エポキシ樹脂、商品名NC3000、日本化薬株式会社製、エポキシ当量265〜285
(A−2)フェノールアラルキル型エポキシ樹脂、商品名NC2000L、日本化薬株式会社製、エポキシ当量229〜244
(A´−1)ビフェニル型エポキシ樹脂、商品名YX4000H、ジャパンエポキシレジン社製社製、エポキシ当量187〜197
(A´−2)ビスフェノールA型エポキシ樹脂、商品名jER1001、三菱化学製、エポキシ当量187〜197
(B−1)下記式(2)の構造を含む芳香族アミン、商品名EH105、ADEKA製
(C)シリカフィラー
(C1)平均粒径0.1μm
(C2)平均粒径0.5μm
(D)高分子樹脂
(D−1)ビスフェノールF型構造を有するフェノキシ樹脂、商品名jER4250、三菱化学製、Mw60000
(D−2)ビスフェノールF型構造を有するフェノキシ樹脂、商品名FX316、東都化成製、Mw45000
(D´−1)ビスフェノールA型エポキシ樹脂、商品名jER1010、三菱化学製、Mw5500
(D´−2)ポリビニルホルマール、商品名ビニレックE、チッソ製、Mw126000
(フィルム形成性)
以下に示す手順で折り曲げ試験を実施した。
上記の手順で作製した加圧実装用NCFを180°折りまげた後、割れの有無を確認する。
折り曲げ試験の実施後のフィルムにおける割れの有無を確認した。割れが認められなかった場合は○とし、我が認められた場合は×とした。
(視認性)
上記の手順で作製した加圧実装用NCFをマークを有するチップ上にラミネート(温度80℃、圧力0.4MPa)し、目視により評価した。チップ上のマークが確認できた場合は○とし、チップ上のマークが確認できない場合は×とした。
(120℃粘度(260℃前))
TAインスツルメント社製 ARES−G2で測定条件・8mmアルミパラレルプレート・周波数1Hz ・strain 0.0004〜1000%で測定した一番低い値を120℃における溶融粘度とした。
(120℃粘度(260℃後))
260℃で10秒間加熱した後、上記と同様の手順で120℃における溶融粘度を測定した。
(硬化後の流動性)
プレッシャーオーブンを用いて、加圧条件下で加熱硬化した後、流動性を以下の手順で評価した。加圧条件下での加熱硬化は、圧力0.7MPa、温度175℃で3時間実施した。針による指針により、流動性がないことを確認した。
(プレッシャーオーブン後のボイド)
上記の手順で加圧条件下で加熱硬化した後、ボイドの有無を超音波顕微鏡を用いて観察した。観察エリア内におけるボイド面積が5%以下の場合は合格とし、5%より大きい場合は不合格とした。
(信頼性(プレッシャーオーブン+リフロー))
上記の手順で加圧条件下で加熱硬化した後、温度255℃に加熱してリフローさせた後、
ボイドの有無を超音波顕微鏡を用いて観察した。観察エリア内におけるボイド面積が5%以下の場合は合格とし、5%より大きい場合は不合格とした。
なお、プレッシャーオーブン後のボイドと信頼性(プレッシャーオーブン+リフロー)については、同一サンプルを5つ作成し、これら5つのサンプルについて評価を実施した。
Claims (6)
- (A)固形エポキシ樹脂、
(B)室温で液状であり、下記式1、式2の構造の少なくとも一方を含む芳香族アミン、
(D)質量平均分子量(Mw)が6000から100000の高分子樹脂を含み、
前記(A)成分のエポキシ樹脂のエポキシ当量が220〜340であり、
前記(A)成分100質量部に対し、前記(B)成分を6〜27質量部含有し、
前記(C)成分の含有量が、各成分の合計質量100質量部に対して、20〜65質量部であり、
前記(A)成分、および前記(D)の含有割合((A):(D))が、99:1〜65:35であり、
120℃における溶融粘度が100Pa・s以下であり、
260℃以上で5〜90秒間加熱した後の120℃における溶融粘度が200Pa・s以下であることを特徴とする加圧雰囲気下硬化用半導体封止先供給型フィルム。 - 120℃における溶融粘度が100Pa・s以下であり、260℃以上で5〜90秒間加熱した後の120℃における溶融粘度上昇率が50%以下である、請求項1に記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
- 前記(D)成分の高分子量樹脂がビスフェノールF構造を有するフェノキシ樹脂である、請求項1または2に記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
- 前記(C)成分のシリカフィラーの平均粒径が1μm以下である、請求項1〜3のいずれかに記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
- 請求項1〜4のいずれかの記載の加圧雰囲気下硬化用半導体封止先供給型フィルムの硬化物。
- 請求項1〜4のいずれかに記載の加圧雰囲気下硬化用半導体封止先供給型フィルムを用いた半導体装置。
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