WO2019012892A1 - 加圧実装用ｎｃｆ、その硬化物およびこれを用いた半導体装置 - Google Patents

加圧実装用ｎｃｆ、その硬化物およびこれを用いた半導体装置 Download PDF

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Publication number
WO2019012892A1
WO2019012892A1 PCT/JP2018/022390 JP2018022390W WO2019012892A1 WO 2019012892 A1 WO2019012892 A1 WO 2019012892A1 JP 2018022390 W JP2018022390 W JP 2018022390W WO 2019012892 A1 WO2019012892 A1 WO 2019012892A1
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Prior art keywords
component
mass
ncf
pressure
melt viscosity
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PCT/JP2018/022390
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English (en)
French (fr)
Inventor
賢市 登坂
佳英 福原
裕美 齋藤
豊和 発地
正明 星山
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ナミックス株式会社
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Priority to KR1020197035980A priority Critical patent/KR102545377B1/ko
Priority to US16/623,447 priority patent/US11485848B2/en
Priority to CN201880037335.7A priority patent/CN110741027B/zh
Publication of WO2019012892A1 publication Critical patent/WO2019012892A1/ja

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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
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Definitions

  • the present invention relates to an NCF for pressure mounting, a cured product thereof, and a semiconductor device using the same.
  • the surface of the IC (Integrated Circuit) chip on which the electrode (bump) is formed and the surface of the substrate on which the electrode (electrode pad) is formed are opposed to each other.
  • a flip chip method of electrically connecting with the electrode pad of the in this flip chip method a liquid called an underfill agent is generally used after electrode connection in order to protect the connection between the electrodes from the outside and to relieve the stress caused by the difference in linear expansion coefficient between the IC chip and the substrate.
  • the thermosetting adhesive is poured between the semiconductor chip and the substrate and cured.
  • An object of the present invention is to provide NCF suitable for pressure mounting, more specifically, NCF having a high void suppression effect when used for pressure mounting, a cured product thereof, and a semiconductor device using the same. Do.
  • the present invention is (A) Solid epoxy resin, (B) An aromatic amine which is liquid at room temperature and contains at least one of the structures of the following formulas 1 and 2. (C) silica filler, (D) containing a polymer resin having a mass average molecular weight (Mw) of 6,000 to 100,000; The epoxy equivalent of the epoxy resin of said (A) component is 220-340, The component (B) is contained in an amount of 6 to 27 parts by mass with respect to 100 parts by mass of the component (A).
  • the content of the component (C) is 20 to 65 parts by mass with respect to 100 parts by mass of the total mass of each component,
  • the content ratio of the component (A) and the component (D) ((A) :( D)) is 99: 1 to 65:35,
  • the melt viscosity at 120 ° C is 100 Pa ⁇ s or less, It is a semiconductor encapsulation destination supply film for curing in a pressurized atmosphere characterized by having a melt viscosity at 120 ° C. of 200 Pa ⁇ s or less after heating at 260 ° C. or more for 5 to 90 seconds.
  • the melt viscosity at 120 ° C. is 100 Pa ⁇ s or less, and the melt viscosity increase rate at 120 ° C. after heating at 260 ° C. or more for 5 to 90 seconds. Is preferably 50% or less.
  • the high molecular weight resin of the component (D) is preferably a phenoxy resin having a bisphenol F structure.
  • the average particle diameter of the silica filler of the said (C) component is 1 micrometer or less in the semiconductor encapsulation destination supply type film for hardening
  • the present invention provides a cured product of the semiconductor encapsulation target supply film for curing under pressure atmosphere of the present invention.
  • the present invention provides a semiconductor device using the semiconductor encapsulation destination supply type film for curing under pressure atmosphere of the present invention.
  • the semiconductor encapsulation destination supply film for curing under pressure atmosphere of the present invention has a high void suppression effect when used for pressure mounting. Therefore, it is suitable for NCF for pressure mounting.
  • the semiconductor encapsulation destination supply type film for curing under pressure atmosphere (hereinafter referred to as NCF for pressure mounting) of the present invention is (A) solid epoxy resin, (B) specific aromatic amine (described later), C) silica filler, and (D) specific polymer resin described later.
  • the solid epoxy resin of the component (A) mainly contributes to the adhesion of the NCF for pressure mounting of the present invention.
  • a solid epoxy resin means an epoxy resin which is solid at normal temperature.
  • the solid epoxy resin of the component (A) can be selected from a wide range of solid epoxy resins at room temperature. Specifically, for example, bisphenol A type epoxy resin, bisphenol S type epoxy resin, naphthalene type epoxy resin, phenol novolac type epoxy resin, phenol aralkyl type epoxy resin, cresol novolac type epoxy resin, biphenyl type epoxy resin, biphenyl novolac type Epoxy resin, biphenylaralkyl type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, etc. can be used.
  • biphenylaralkyl type epoxy resins phenolaralkyl type epoxy resins, and dicyclopentadiene type epoxy resins are preferable because they are excellent in heat resistance, adhesion and reliability.
  • solid epoxy resin of (A) component any 1 type in the above may be used, and 2 or more types may be used together.
  • the solid epoxy resin of the component (A) has an epoxy equivalent of 220 to 340 from the viewpoint of adjusting the melt viscosity and reactivity. If the epoxy equivalent is less than 220, the NCF is cured when the pressure oven (pressure heating) is performed, and the void can not be suppressed. If the epoxy equivalent is more than 340, the melt viscosity at 120 ° C. is more than 100 Pa ⁇ s, and even if pressure oven mounting is performed, voids can not be suppressed.
  • the epoxy equivalent of the solid epoxy resin of the component (A) is preferably 220 to 310, and more preferably 225 to 290.
  • the solid epoxy resin of component (A) preferably has a weight average molecular weight (Mw) of 500 to 3,000, and more preferably 750 to 2,500.
  • (B) Aromatic amine
  • the aromatic amine of component (B) is liquid at room temperature and contains at least one of the structures of the following formulas 1 and 2.
  • the NCF for pressure mounting has appropriate toughness. Further, when the aromatic amine of the component (B) contains at least one of the structures of the above formulas 1 and 2, the melt viscosity at 120 ° C. and the 120 ° C. after heating for 5 to 90 seconds at 260 ° C. or more Melt viscosity can be adjusted to the conditions mentioned later.
  • the aromatic amine of the component (B) may contain either one or both of the structures of the above formulas 1 and 2.
  • the content of the aromatic amine of the component (B) is 6 to 27 parts by mass with respect to 100 parts by mass of the solid epoxy resin of the component (A), 14 It is more preferable that the amount is about 26 parts by mass.
  • (C) Silica filler The silica filler of (C) component is added for the purpose of improving the reliability of the semiconductor package mounted by NCF for pressure mounting.
  • the content of the silica filler of the component (C) is 20 to 65 with respect to 100 parts by mass of the total mass of each component of the NCF for pressure mounting. It is a mass part. If the content of the component (C) is less than 20 parts by mass, the reliability of the semiconductor package mounted by the NCF for pressure mounting decreases. When the content of the component (C) exceeds 65 parts by mass, the film formability and the transparency of the NCF for pressure mounting are lowered.
  • the content of the component (C) is, based on 100 parts by mass of the total mass of each component of the NCF for pressure mounting,
  • the silica filler of the component (C) preferably has an average particle diameter of 1 ⁇ m or less in view of film smoothness, film transparency, and chip damage reduction, and more preferably 0.5 ⁇ m or less.
  • the silica filler of the component (C) one that has been subjected to surface treatment with a silane coupling agent or the like may be used.
  • the polymer resin of the component (D) is a film forming agent and contributes to the toughness of the NCF for pressure mounting.
  • the polymer resin of component (D) has a mass average molecular weight (Mw) of 6,000 to 100,000. When the Mw of the polymer resin of the component (D) is less than 6000, the film formability is deteriorated. On the other hand, if the Mw of the polymer resin of the component (D) exceeds 100,000, the melt viscosity at 120 ° C. and the melt viscosity at 120 ° C. after heating for 5 to 90 seconds at 260 ° C. or more increase.
  • the polymer resin of the component (D) one having no crystal nucleus is preferable from the viewpoint of the transparency of the NCF for pressure mounting.
  • a polymer resin of (D) component a phenoxy resin is preferable, and what has a bisphenol F type
  • mold structure is more preferable especially.
  • the content ratio of the polymer resin of the component (D) is 99: 1 to 65:35 as the mass ratio ((A) :( D)) of the component (A) to the solid epoxy resin.
  • the content ratio of the component (D) is too small, the film formability deteriorates. If the content ratio of the component (D) is too large, the melt viscosity at 120 ° C. and the melt viscosity at 120 ° C. after heating for 5 to 90 seconds at 260 ° C. or more increase, and the conditions described later can not be satisfied. Voids can not be suppressed when the pressure oven (pressure heating) is performed.
  • the NCF for pressure mounting of the present invention may further contain the following components as optional components.
  • the NCF for pressure mounting of the present invention may contain a liquid epoxy resin for the purpose of viscosity adjustment.
  • the liquid epoxy resin means an epoxy resin which is liquid at normal temperature. Specifically, for example, bisphenol A epoxy resin and bisphenol F epoxy resin can be mentioned. In the case of containing a liquid epoxy resin, it is necessary to pay attention to its impurity concentration. In addition, when the content of the liquid epoxy resin is too large, the NCF for pressure mounting is provided with fluidity and flexibility, and the handling property is reduced. Therefore, it is necessary to be careful that the content of the liquid epoxy resin is not too large. is there.
  • the NCF for pressure mounting of the present invention may contain a coupling agent for the purpose of improving the adhesion to an IC chip or a substrate.
  • a coupling agent what contains an epoxy group or a (meth) acrylate group is preferable.
  • the NCF for pressure mounting of the present invention may contain a curing accelerator of an epoxy resin as required.
  • the NCF for pressure mounting of the present invention may contain a rheology modifier as needed for the purpose of adjusting the coating aptitude and the flow aptitude.
  • the NCF for pressure mounting of the present invention may optionally contain a dispersing agent and an anti-settling agent for the purpose of improving the dispersibility of the silica filler of the component (C) and the optional colorant and preventing sedimentation. .
  • the NCF for pressure mounting of the present invention may optionally contain an antifoaming agent for the purpose of adjusting the defoaming property.
  • the NCF for pressure mounting of the present invention may optionally contain a colorant for coloring purposes.
  • the NCF for pressure mounting of the present invention may contain a surface conditioner as needed for the purpose of adjusting the surface condition and wettability.
  • the NCF for pressure mounting of the present invention may optionally contain an elastomer for the purpose of adjusting the elastic modulus and stress.
  • the pressure mounting NCF of the present invention can be manufactured by a conventional method.
  • the above components (A) to (D) and, if necessary, other components to be contained are mixed by a heating vacuum mixing kneader to prepare a resin composition.
  • the components (A) to (D) and, if necessary, other components to be contained as required, were dissolved in a predetermined solvent concentration and heated to 10 to 80 ° C. After a predetermined amount is charged into the reaction vessel and atmospheric pressure mixing is performed for 3 hours while rotating at a rotational speed of 100 to 1000 rpm, mixing and stirring can be performed for a further 3 to 60 minutes under vacuum (maximum 1 Torr).
  • the resin composition prepared by the above procedure is diluted with a solvent to form a varnish, which is applied to at least one surface of a support and dried, and then from a support-mounted NCF for pressure mounting or from the support It can be provided as a peeled pressure mounting NCF.
  • solvents usable as varnishes include ketones such as methyl ethyl ketone and methyl isobutyl ketone; aromatic solvents such as toluene and xylene; high boiling solvents such as dioctyl phthalate and dibutyl phthalate;
  • the amount of the solvent used is not particularly limited, and may be a conventionally used amount, but is preferably 20 to 90% by mass with respect to each component of the pressure mounting NCF.
  • the support is appropriately selected according to the desired form in the method for producing NCF for pressure mounting, and is not particularly limited. Examples thereof include metal foils such as copper and aluminum, and carrier films of resins such as polyester and polyethylene.
  • the support is preferably release-treated with a release agent such as a silicone compound.
  • coat a varnish is not specifically limited, For example, a slot-die system, a gravure system, a doctor coater system etc. are mentioned, According to the thickness etc. of a desired film, it selects suitably.
  • the application is performed such that the thickness of the film formed after drying is the desired thickness.
  • Such thickness can be derived from the solvent content by the person skilled in the art.
  • the drying conditions are appropriately designed according to the type and amount of the solvent used for the varnish, the amount of the varnish used, the thickness of the coating, and the like, and are not particularly limited, but for example, 60 to 100 ° C. It can be carried out at atmospheric pressure.
  • the NCF for pressure mounting of the present invention has a melt viscosity at 120 ° C. of 100 Pa ⁇ s or less. Thereby, at the time of pressure mounting, the fluidity at the time of chip mounting becomes good, and the void at this stage is suppressed.
  • the NCF for pressure mounting of the present invention preferably has a melt viscosity at 120 ° C. of 50 Pa ⁇ s or less.
  • the NCF for pressure mounting of the present invention has a melt viscosity of 200 Pa ⁇ s or less at 120 ° C. after heating at 260 ° C. or more for 5 to 90 seconds. As a result, in pressure mounting, the flowability at the time of reflow performed after TCB and chip mounting becomes good, and the void at this stage is suppressed.
  • the NCF for pressure mounting of the present invention preferably has a melt viscosity at 180 ° C. of at most 180 Pa ⁇ s after heating at 260 ° C. or more for 5 to 90 seconds.
  • the NCF for pressure mounting of the present invention is heated at 260 ° C. or more for 5 to 90 seconds, which is a ratio of the melt viscosity at 120 ° C. to the melt viscosity at 120 ° C. after heating for 5 to 90 seconds at 260 ° C. or more.
  • the melt viscosity increase rate at 120 ° C ((melt viscosity at 120 ° C after heating for 5 to 90 seconds at 260 ° C or higher) / (melt viscosity at 120 ° C) ⁇ 100) is 50% or less
  • the flowability at the time of reflow performed after TCB or chip mounting is good, and is more preferably 45% or less.
  • the procedure for using the NCF for pressure mounting of the present invention is shown below.
  • the pressure mounting NCF is attached in a desired shape to a position on the substrate where the semiconductor chip is mounted by a laminator or the like.
  • each chip can be cut out by a dicer or the like.
  • the lamination conditions are not particularly limited, but conditions such as heating, pressurization and depressurization can be appropriately combined.
  • the heating temperature is preferably 40 to 120 ° C.
  • the degree of pressure reduction is 1 hPa or less
  • the pressure is preferably 0.01 MPa or more.
  • the chip is mounted on a chip mounting position on the substrate, and then reflowed by heating to a predetermined temperature.
  • the heating temperature during reflow is preferably 220 to 280 ° C.
  • pressure heating and curing are performed using a pressure oven.
  • the heating temperature for pressure heating and curing is 165 to 185 ° C.
  • the pressure is 0.2 to 1.0 MPa
  • the pressure heating and curing is performed for 30 minutes or more and 4 hours or less under these conditions.
  • the pressure mounting is carried out in the same procedure as above. It is also good.
  • the TCB conditions are not particularly limited, the TCB conditions can be appropriately selected according to the semiconductor chip size, the bump material, the number of bumps, and the like.
  • the heating temperature is preferably 50 to 300 ° C.
  • the time is 0.5 to 20 seconds
  • the pressure is preferably 5 to 450 N.
  • the semiconductor device of the present invention is not particularly limited as long as it uses the NCF for pressure mounting of the present invention when manufacturing the semiconductor device.
  • a specific example of the semiconductor device of the present invention is a semiconductor device having a flip chip structure.
  • the flip chip has a projecting electrode called a bump, and is connected to an electrode such as a substrate via the electrode.
  • the bump material solder, gold, copper and the like can be mentioned.
  • Substrates to be connected to the flip chip include single layers such as FR-4 or laminated organic substrates, inorganic substrates such as silicon, glass, ceramic, etc. Gold plating or tin plating on copper and copper, solder layer etc.
  • the formed electrode is used.
  • Semiconductor devices having a flip chip structure include memory devices such as dynamic random access memories (DRAMs), processor devices such as central processing units (CPUs) and graphics processing units (GPUs), light emitting elements such as light emitting diodes (LEDs), and LCDs. Examples include driver ICs used for (Liquid Crystal Display) and the like.
  • DRAMs dynamic random access memories
  • processor devices such as central processing units (CPUs) and graphics processing units (GPUs)
  • light emitting elements such as light emitting diodes (LEDs)
  • LCDs liquid crystal display
  • Examples 1 to 11, Comparative Examples 1 to 9 Each raw material was mixed so that it might become the compounding ratio shown to the following table, it was made to melt
  • the solvent used was methyl ethyl ketone (manufactured by Wako Pure Chemical Industries, Ltd.).
  • a coating varnish was applied onto a release agent-coated PET (polyethylene terephthalate) film so as to have a dry thickness of about 20 ⁇ m. Thereafter, the release agent-treated PET (polyethylene terephthalate) film coated with the coating varnish is dried in a dryer at 80 ° C. for 10 minutes to remove the solvent, and a 20 ⁇ m thick NCF for pressure mounting is obtained.
  • the numerical value regarding each composition in a table represents a mass part.
  • (Film formability) The bending test was carried out according to the following procedure. After folding the NCF for pressure mounting prepared in the above procedure by 180 °, the presence or absence of a crack is confirmed. The film was checked for cracks after the bending test. When no cracking was observed, it was evaluated as ⁇ , and when cracking was observed, it was evaluated as ⁇ .
  • the pressure mounting NCF prepared in the above procedure was laminated (temperature 80 ° C., pressure 0.4 MPa) on a chip having a mark, and evaluated visually. When the mark on the chip could be confirmed, it was circled, and when the mark on the chip could not be confirmed, it was marked x.
  • the void area in the observation area is 5% or less, it is regarded as pass, and in the case where it is larger than 5%, it is rejected.
  • the void after pressure oven and reliability pressure oven + reflow
  • five identical samples were produced and evaluation was implemented about these five samples.
  • Example 2 is an example which changed the solid epoxy resin of (A) component with respect to Example 1.
  • FIG. Example 3 is an example in which the liquid aromatic amine of the component (B) is changed with respect to Example 1.
  • Example 4 is an example in which the particle diameter of the silica filler of the component (C) is changed.
  • Example 5 is an example in which the polymer resin of the component (D) is changed as compared to Example 1.
  • Example 6 is an example in which the blending ratio of the component (D) is changed with respect to Example 5.
  • Example 7 is an example in which the compounding ratio of the component (D) is changed with respect to Example 1.
  • Examples 8 and 9 are the examples which changed the mixture ratio of the (B) component to the (A) component to Example 1.
  • Examples 10 and 11 are the examples which changed the compounding ratio of (C) ingredient to Example 1 compared with.
  • Comparative Example 1 is an example in which the blending ratio of the component (D) is large and the melt viscosity at 120 ° C. (before 260 ° C. and after 260 ° C.) does not satisfy the conditions of the present invention, and the void and reliability after pressure oven Pressure oven + reflow) was inferior.
  • the comparative example 2 is an example using the liquid aromatic amine of the structure except this invention, and the void and reliability (pressure oven + reflow) after a pressure oven were inferior.
  • the comparative example 3 is an example with a small mixture ratio of (B) component, and fluidity
  • Comparative Example 4 is an example using a solid epoxy resin having a low epoxy equivalent, and the void and the reliability (pressure oven + reflow) after the pressure oven were inferior.
  • Comparative Example 5 is an example using a solid epoxy resin having a high epoxy equivalent, and the melt viscosity at 120 ° C. (before 260 ° C.) does not satisfy the conditions of the present invention, and the void and reliability after pressure oven (pressure oven + Reflow) was inferior.
  • Comparative Example 6 is an example using novolac phenol resin instead of the component (B), and fluidity was observed after curing.
  • the comparative example 7 is an example using polymer resin with low Mw, and film formation property was inferior.
  • Comparative Example 8 is an example using a polymer resin having a high Mw, and the melt viscosity (before 260 ° C. and after 260 ° C.) at 120 ° C. does not satisfy the conditions of the present invention, and voids and reliability after pressure oven Pressure oven + reflow) was inferior.
  • Comparative Example 9 is an example in which the blending ratio of the silica filler of the component (C) is large, and the melt viscosity at 120 ° C. (before 260 ° C. and after 260 ° C.) does not satisfy the conditions of the present invention, and all evaluation items are inferior. It was

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Abstract

加圧実装に好適なＮＣＦの提供。　（Ａ）固形エポキシ樹脂、（Ｂ）室温で液状であり、下記式１、式２の構造の少なくとも一方を含む芳香族アミン、（Ｃ）シリカフィラー、（Ｄ）質量平均分子量（Ｍｗ）が６０００から１０００００の高分子樹脂を含み、前記（Ａ）成分のエポキシ樹脂のエポキシ当量が２２０～３４０であり、前記（Ａ）成分１００質量部に対し、前記（Ｂ）成分を６～２７質量部含有し、前記（Ｃ）成分の含有量が、各成分の合計質量１００質量部に対して、２０～６５質量部であり、前記（Ａ）成分、および前記（Ｄ）の含有割合（（Ａ）：（Ｄ））が、９９：１～６５：３５であり、１２０℃における溶融粘度が１００Ｐａ・ｓ以下であり、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が２００Ｐａ・ｓ以下であることを特徴とする加圧雰囲気下硬化用半導体封止先供給型フィルム。

Description

加圧実装用ＮＣＦ、その硬化物およびこれを用いた半導体装置
　本発明は、加圧実装用ＮＣＦ、その硬化物およびこれを用いた半導体装置に関する。
　従来より、半導体実装においては、ＩＣ（Ｉｎｔｅｇｒａｔｅｄ　Ｃｉｒｃｕｉｔ）チップの電極（バンプ）が形成されている面と、基板の電極（電極パット）が形成された面とを対峙させ、ＩＣチップのバンプと基板の電極パッドとを電気的に接続するフリップチップ法が行われている。
　このフリップチップ法では、電極同士の接続部分を外部から保護し、ＩＣチップと基板との線膨張係数の違いに起因する応力を緩和するために、通常、電極接続後に、アンダーフィル剤と呼ばれる液状の熱硬化性接着剤を半導体チップと基板との間に流し込み硬化させるようにする。
　近年、ＩＣチップの微細化が急速に進んでいる。これに伴い、隣接する電極間のピッチや、半導体チップと基板との間のギャップが益々狭くなる傾向にある。このため、毛細管現象を利用してアンダーフィル剤をＩＣチップと基板との間に流し込むと、ボイドが発生したり、アンダーフィル剤の流し込みに長時間を要する等の問題が発生してしまう。
　このため、ＮＣＰ（Ｎｏｎ　Ｃｏｎｄｕｃｔｉｖｅ　Ｐａｓｔｅ）と呼ばれる液状の接着剤、もしくは、ＮＣＦ（Ｎｏｎ　Ｃｏｎｄｕｃｔｉｖｅ　Ｆｉｌｍ）と呼ばれるフィルム状の接着剤を予め基板に塗布、もしくは、貼付し、その後、フィリップチップボンダー等による、加熱圧接（Ｔｈｅｒｍａｌ　Ｃｏｍｐｒｅｓｓｉｏｎ　Ｂｏｎｄｉｎｇ：ＴＣＢ）で樹脂を硬化させ、ＩＣチップのバンプと基板の電極パッドとを接続する、いわゆる先入れ法が試みられている（特許文献１参照）。
　半導体実装時におけるボイドを抑制する方法として、加圧雰囲気下で加熱して実装する加圧実装が提案されている（特許文献２、特許文献３参照）。
 
特開２０１５－５０３２２０号公報 特開２０１３－１２３０３３号公報 国際公開ＷＯ２０１６／１４８１２１号
　本発明は、加圧実装に好適なＮＣＦ、より具体的には、加圧実装に使用した場合にボイド抑制効果が高いＮＣＦ、その硬化物およびこれを用いた半導体装置を提供することを目的とする。
　上記の目的を達成するため、本発明は、
　（Ａ）固形エポキシ樹脂、
　（Ｂ）室温で液状であり、下記式１、式２の構造の少なくとも一方を含む芳香族アミン、
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000004
 　（Ｃ）シリカフィラー、
　（Ｄ）質量平均分子量（Ｍｗ）が６０００から１０００００の高分子樹脂を含み、
　前記（Ａ）成分のエポキシ樹脂のエポキシ当量が２２０～３４０であり、
　前記（Ａ）成分１００質量部に対し、前記（Ｂ）成分を６～２７質量部含有し、
　前記（Ｃ）成分の含有量が、各成分の合計質量１００質量部に対して、２０～６５質量部であり、
　前記（Ａ）成分、および前記（Ｄ）の含有割合（（Ａ）：（Ｄ））が、９９：１～６５：３５であり、
　１２０℃における溶融粘度が１００Ｐａ・ｓ以下であり、
　２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が２００Ｐａ・ｓ以下であることを特徴とする加圧雰囲気下硬化用半導体封止先供給型フィルムである。
　本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムにおいて、１２０℃における溶融粘度が１００Ｐａ・ｓ以下であり、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度上昇率が５０％以下であることが好ましい。
　本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムにおいて、前記（Ｄ）成分の高分子量樹脂がビスフェノールＦ構造を有するフェノキシ樹脂であることが好ましい。
　本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムにおいて、前記（Ｃ）成分のシリカフィラーの平均粒径が１μｍ以下であることが好ましい。
　また、本発明は、本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムの硬化物を提供する。
　また、本発明は、本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムを用いた半導体装置を提供する。
　本発明の加圧雰囲気下硬化用半導体封止先供給型フィルムは、加圧実装に使用した場合にボイド抑制効果が高い。そのため、加圧実装用のＮＣＦに好適である。
　以下、本発明について詳細に説明する。
　本発明の加圧雰囲気下硬化用半導体封止先供給型フィルム（以下、加圧実装用ＮＣＦと記載する。）は、（Ａ）固形エポキシ樹脂、（Ｂ）後述する特定の芳香族アミン、（Ｃ）シリカフィラー、および（Ｄ）後述する特定の高分子樹脂を含む。
　（Ａ）固形エポキシ樹脂
　（Ａ）成分の固形エポキシ樹脂は、本発明の加圧実装用ＮＣＦの接着性に主として寄与する。
　本発明において固形エポキシ樹脂とは常温で固形のエポキシ樹脂を意味する。（Ａ）成分として、固形エポキシ樹脂を用いることにより、フィルム形成能力を付与できる。
　（Ａ）成分の固形エポキシ樹脂としては、常温で固形のエポキシ樹脂から幅広く選択することができる。具体的には、たとえば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、ナフタレン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ビフェニルノボラック型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、トリフェニルメタン型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂等を用いることができる。
　上記の中でも、ビフェニルアラルキル型エポキシ樹脂、フェノールアラルキル型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂が、耐熱性、密着性、信頼性が優れるから好ましい。
　なお、（Ａ）成分の固形エポキシ樹脂として、上記のうちいずれか１種を使用してもよく、２種以上を併用してもよい。
　（Ａ）成分の固形エポキシ樹脂は、溶融粘度の調整と反応性の観点から、エポキシ当量が２２０～３４０である。エポキシ当量が２２０未満だと、プレッシャーオーブン（加圧加熱）実施時にＮＣＦが硬化しておりボイドを抑制することができない。エポキシ当量が３４０超だと、１２０℃における溶融粘度が１００Ｐａ・ｓ超となり、プレッシャーオーブン実装を行ってもボイドを抑制することができない。
　（Ａ）成分の固形エポキシ樹脂は、エポキシ当量が２２０～３１０であることが好ましく、２２５～２９０であることがより好ましい。
　（Ａ）成分の固形エポキシ樹脂は、質量平均分子量（Ｍｗ）が５００～３０００であることが好ましく、７５０～２５００であることがより好ましい。
　（Ｂ）芳香族アミン
　（Ｂ）成分の芳香族アミンは、室温で液状であり、下記式１、式２の構造の少なくとも一方を含む。
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000006
　（Ｂ）成分の芳香族アミンが室温で液状であることにより、加圧実装用ＮＣＦが適度な靱性を有する。
　また、（Ｂ）成分の芳香族アミンが、上記式１、式２の構造の少なくとも一方を含むことにより、１２０℃における溶融粘度、および２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度を後述する条件に調整することができる。
　（Ｂ）成分の芳香族アミンは、上記式１、式２の構造のうち、いずれか一方を含んでいてもよく、両方を含んでもよい。
　強靭性、溶融粘度の調整および反応性の観点から、（Ｂ）成分の芳香族アミンの含有量は、（Ａ）成分の固体エポキシ樹脂１００質量部に対し、６～２７質量部であり、１４～２６質量部であることがより好ましい。
　（Ｃ）シリカフィラー
　（Ｃ）成分のシリカフィラーは、加圧実装用ＮＣＦにより実装された半導体パッケージの信頼性を向上させる目的で添加される。
　加圧実装用ＮＣＦのフィルム形成性、および透明性の観点から、（Ｃ）成分のシリカフィラーの含有量は、加圧実装用ＮＣＦの各成分の合計質量１００質量部に対して、２０～６５質量部である。（Ｃ）成分の含有量が２０質量部未満だと、加圧実装用ＮＣＦにより実装された半導体パッケージの信頼性が低下する。（Ｃ）成分の含有量が６５質量部超だと、フィルム形成性、および加圧実装用ＮＣＦの透明性が低下する。
　（Ｃ）成分の含有量は、加圧実装用ＮＣＦの各成分の合計質量１００質量部に対して、
　（Ｃ）成分のシリカフィラーは、平均粒径が１μｍ以下であることが、フィルム平滑性、フィルム透明性、チップダメージ低減のため好ましく、０．５μｍ以下であることがより好ましい。
　（Ｃ）成分のシリカフィラーとして、シランカップリング剤等で表面処理が施されたものを使用してもよい。
　（Ｄ）高分子樹脂
　（Ｄ）成分の高分子樹脂は、フィルム形成剤であり、加圧実装用ＮＣＦの強靭性に寄与する。（Ｄ）成分の高分子樹脂は、質量平均分子量（Ｍｗ）が６０００から１０００００である。（Ｄ）成分の高分子樹脂のＭｗが６０００未満だとフィルム形成性が悪化する。一方、（Ｄ）成分の高分子樹脂のＭｗが１０００００超だと、１２０℃における溶融粘度、および２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が増加し、後述する条件を満たすことができず、プレッシャーオーブン（加圧加熱）実施時にボイドを抑制することができない。
　（Ｄ）成分の高分子樹脂としては、結晶核が存在しないものが、加圧実装用ＮＣＦの透明性の観点から好ましい。
　（Ｄ）成分の高分子樹脂としては、フェノキシ樹脂が好ましく、中でも、ビスフェノールＦ型構造を有するものがより好ましい。
　（Ｄ）成分の高分子樹脂の含有割合は、（Ａ）成分の固形エポキシ樹脂に対する質量比（（Ａ）：（Ｄ））で９９：１～６５：３５である。（Ｄ）成分の含有割合が少なすぎると、フィルム形成性が悪化する。（Ｄ）成分の含有割合が多すぎると、１２０℃における溶融粘度、および２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が増加し、後述する条件を満たすことができず、プレッシャーオーブン（加圧加熱）実施時にボイドを抑制することができない。
　本発明の加圧実装用ＮＣＦは、さらに以下の成分を任意成分として含有してもよい。
（液状エポキシ樹脂）
　本発明の加圧実装用ＮＣＦは、粘度調整の目的で、液状エポキシ樹脂を含有させてもよい。本発明において液状エポキシ樹脂とは常温で液状のエポキシ樹脂を意味する。具体的には、たとえば、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂が挙げられる。
　液状エポキシ樹脂を含有させる場合、その不純物濃度に留意する必要がある。また、液状エポキシ樹脂の含有量が多すぎると、加圧実装用ＮＣＦに流動性や柔軟性が付与され、取り扱い性が低下するため、液状エポキシ樹脂の含有量が多すぎないよう留意する必要がある。
（カップリング剤）
　本発明の加圧実装用ＮＣＦは、ＩＣチップや基板に対する密着性を向上させる目的でカップリング剤を含有させてもよい。
　カップリング剤としては、エポキシ基もしくは（メタ）アクリレート基を含有するものが好ましい。
（硬化促進剤）
　本発明の加圧実装用ＮＣＦは、エポキシ樹脂の硬化促進剤を必要に応じて含有させてもよい。
（レオロジー調整剤）
　本発明の加圧実装用ＮＣＦは、レオロジー調整剤を塗布適性、流動適性を調整する目的で必要に応じて含有させてもよい。
（分散剤、沈降防止剤）
　本発明の加圧実装用ＮＣＦは、（Ｃ）成分のシリカフィラー、および任意成分の着色剤の分散性向上、沈降防止の目的で分散剤、沈降防止剤を必要に応じて含有させてもよい。
（消泡剤）
　本発明の加圧実装用ＮＣＦは、消泡性調整の目的で消泡剤を必要に応じて含有させてもよい。
（着色剤）
　本発明の加圧実装用ＮＣＦは、着色目的で着色剤を必要に応じて含有させてもよい。
（表面調整剤）
　本発明の加圧実装用ＮＣＦは、表面状態、濡れ性の調整の目的で表面調整剤を必要に応じて含有させてもよい。
（エラストマー類）
　本発明の加圧実装用ＮＣＦは、弾性率、応力の調整の目的でエラストマー類を必要に応じて含有させてもよい。
（加圧実装用ＮＣＦの製造）
　本発明の加圧実装用ＮＣＦは、慣用の方法により製造することができる。例えば、溶剤の存在下または非存在下で、上記（Ａ）成分～（Ｄ）成分、さらに必要に応じて含有させるその他の成分を加熱真空混合ニーダーにより混合して樹脂組成物を調製する。
　上記（Ａ）成分～（Ｄ）成分、さらに必要に応じて含有させるその他の成分が所望の含有割合となるように、所定の溶剤濃度に溶解し、それらを１０～８０℃に加温された反応釜に所定量投入し、回転数１００～１０００ｒｐｍで回転させながら、常圧混合を３時間行った後、真空下（最大１Ｔｏｒｒ）でさらに３～６０分混合攪拌することができる。
　上記の手順で調製された樹脂組成物を溶剤で希釈してワニスとし、これを支持体の少なくとも片面に塗布し、乾燥させた後、支持体付の加圧実装用ＮＣＦ、または、支持体から剥離した加圧実装用ＮＣＦとして提供することができる。
　ワニスとして使用可能な溶剤としては、メチルエチルケトン、メチルイソブチルケトン等のケトン類；トルエン、キシレン等の芳香族溶剤；ジオクチルフタレート、ジブチルフタレート等の高沸点溶剤等が挙げられる。溶剤の使用量は特に限定されず、従来から使用されている量とすることができるが、好ましくは、加圧実装用ＮＣＦの各成分に対して２０～９０質量％である。
　支持体は、加圧実装用ＮＣＦの製造方法における所望の形態により適宜選択され、特に限定されないが、例えば、銅、アルミニウム等の金属箔、ポリエステル、ポリエチレン等の樹脂のキャリアフィルム等が挙げられる。本発明の加圧実装用ＮＣＦを、支持体から剥離したフィルムの形態として提供する場合、支持体は、シリコーン化合物等の離型剤で離型処理されていることが好ましい。
　ワニスを塗布する方法は、特に限定されないが、例えば、スロットダイ方式、グラビア方式、ドクターコーター方式等が挙げられ、所望のフィルムの厚みなどに応じて適宜選択される。塗布は、乾燥後に形成されるフィルムの厚みが、所望の厚みになるように行われる。このような厚みは、当業者であれば、溶剤含有量から導くことができる。
　乾燥の条件は、ワニスに使用される溶剤の種類や量、ワニスの使用量や塗布の厚みなどに応じて適宜設計され、特に限定されるものではないが、例えば、６０～１００℃であり、大気圧下で行うことができる。
　次に本発明の加圧実装用ＮＣＦの特性について述べる。
　本発明の加圧実装用ＮＣＦは、１２０℃における溶融粘度が１００Ｐａ・ｓ以下である。これにより、加圧実装時において、チップマウント時の流動性が良好になり、この段階におけるボイドが抑制される。
　本発明の加圧実装用ＮＣＦは、１２０℃における溶融粘度が５０Ｐａ・ｓ以下であることが好ましい。
　本発明の加圧実装用ＮＣＦは、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が２００Ｐａ・ｓ以下である。これにより、加圧実装時において、ＴＣＢ後やチップマウント後に実施するリフロー時の流動性が良好になり、この段階におけるボイドが抑制される。
　本発明の加圧実装用ＮＣＦは、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が１８０Ｐａ・ｓ以下であることが好ましい。
　本発明の加圧実装用ＮＣＦは、１２０℃における溶融粘度と、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度との比として求まる２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度上昇率（（２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度）／（１２０℃における溶融粘度）×１００）が５０％以下であることが加圧実装時において、ＴＣＢ後やチップマウント後に実施するリフロー時の流動性が良好になることから好ましく、４５％以下であることがより好ましい。
　次に本発明の加圧実装用ＮＣＦの使用手順を以下に示す。
　本発明の加圧実装用ＮＣＦを用いて半導体パッケージを実装する場合、基板上の半導体チップを実装する位置へ加圧実装用ＮＣＦを所望の形状にてラミネータ等で貼り付ける。
　また、半導体回路が形成されたウエハ上へラミネータ等にて貼り付けた後、ダイサー等により個々のチップへ切り出すこともできる。ラミネーション条件は特に限定されないが、加熱、加圧、減圧などの条件を適宜組み合わせることができる。特に微細な凹凸へボイド等の欠陥なく貼り付けるためには、加熱温度は４０～１２０℃、減圧度は１ｈＰａ以下、圧力は０．０１ＭＰａ以上が好ましい。
　加圧実装用ＮＣＦをラミネーション等により貼り付けた後、基板上のチップ搭載位置へチップマウントした後、所定の温度に加熱してリフローする。リフロー時の加熱温度は、２２０～２８０℃であることが好ましい。次に、プレッシャーオーブンを用いて加圧加熱硬化を実施する。加圧加熱硬化の加熱温度は１６５～１８５℃、圧力は０．２～１．０ＭＰａとし、この条件で３０分以上４時間以下で加圧加熱硬化する。
　加圧実装用ＮＣＦをラミネーション等により貼り付けた後、フリップチップボンダー等により加熱圧接（ＴＣＢ）によって基板上のチップ搭載位置へチップマウントした後、上記と同様の手順で加圧実装を実施してもよい。ＴＣＢ条件は特に限定されないが、半導体チップサイズ、バンプ材質、バンプ数等によりＴＣＢ条件を適宜選択することができる。
　加熱温度は５０～３００℃、時間０．５～２０秒、圧力は５～４５０Ｎであることが好ましい。
　本発明の半導体装置は、半導体装置の製造時に、本発明の加圧実装用ＮＣＦを使用したものである限り特に限定されない。本発明の半導体装置の具体例としては、フリップチップ構造を有する半導体装置が挙げられる。フリップチップは、バンプと呼ばれる突起状の電極を有しており、この電極を介して基板等の電極と接続される。バンプ材質としては、はんだ、金、銅等が上げられる。フリップチップと接続される基板としてはＦＲ－４等の単層、または積層された有機基板、シリコン、ガラス、セラミックなどの無機基板があり、銅および銅上への金メッキまたはスズメッキ、はんだ層等を形成した電極が用いられる。フリップチップ構造の半導体装置としては、ＤＲＡＭ（Ｄｙｎａｍｉｃ　Ｒａｎｄｏｍ　Ａｃｃｅｓｓ　Ｍｅｍｏｒｙ）等のメモリーデバイス、ＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）ＧＰＵ（Ｇｒａｐｈｉｃｓ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）等のプロセッサーデバイス、ＬＥＤ（Ｌｉｇｈｔ　Ｅｍｉｔｔｉｎｇ　Ｄｉｏｄｅ）等の発光素子、ＬＣＤ（Ｌｉｑｕｉｄ　Ｃｒｙｓｔａｌ　Ｄｉｓｐｌａｙ）等に使用されるドライバーＩＣ等が挙げられる。
　以下、実施例により、本発明を詳細に説明するが、本発明はこれらに限定されるものではない。
（実施例１～１１、比較例１～９）
　下記表に示す配合割合となるように各原料を混合し、混合物が５０ｗｔ％の濃度となるように溶剤中に溶解・分散させて塗工用ワニスを調製した。溶剤はメチルエチルケトン（和光純薬工業株式会社製）を使用した。
　離型剤を塗布したＰＥＴ（ポリエチレンテレフタレート）フィルム上へ塗工用ワニスを約２０μｍの乾燥厚みとなるよう塗工した。その後、塗工用ワニスを塗工した離型剤処理されたＰＥＴ（ポリエチレンテレフタレート）フィルムを乾燥機中で８０℃にて１０分間乾燥して溶剤を除去し、２０μｍ厚の加圧実装用ＮＣＦを作製した。なお、表中の各組成に関する数値は質量部を表している。
　加圧実装用ＮＣＦの作成時に使用した成分は以下の通り。
（Ａ）固形エポキシ樹脂
　（Ａ－１）ビフェニルアラルキル型エポキシ樹脂、商品名ＮＣ３０００、日本化薬株式会社製、エポキシ当量２６５～２８５
　（Ａ－２）フェノールアラルキル型エポキシ樹脂、商品名ＮＣ２０００Ｌ、日本化薬株式会社製、エポキシ当量２２９～２４４
　（Ａ´－１）ビフェニル型エポキシ樹脂、商品名ＹＸ４０００Ｈ、ジャパンエポキシレジン社製社製、エポキシ当量１８７～１９７
　（Ａ´－２）ビスフェノールＡ型エポキシ樹脂、商品名ｊＥＲ１００１、三菱化学製、エポキシ当量１８７～１９７
　（Ｂ）液状芳香族アミン
（Ｂ－１）下記式（２）の構造を含む芳香族アミン、商品名ＥＨ１０５、ＡＤＥＫＡ製
Figure JPOXMLDOC01-appb-C000007
 （Ｂ´１）下記式（３）の構造を含む芳香族アミン、商品名ＨＤＡＡ、日本化薬製
Figure JPOXMLDOC01-appb-C000008
 （Ｂ－２）下記式（１）の構造を含む芳香族アミン、商品名エタキュア１００、アルベマール日本株式会社製
Figure JPOXMLDOC01-appb-C000009
 （Ｂ´２）フェノールノボラック樹脂、商品名ＣＲＭ－９５３、アイカＳＤＫフェノール株式会社製
　（Ｃ）シリカフィラー
（Ｃ１）平均粒径０．１μｍ
（Ｃ２）平均粒径０．５μｍ
　（Ｄ）高分子樹脂
（Ｄ－１）ビスフェノールＦ型構造を有するフェノキシ樹脂、商品名ｊＥＲ４２５０、三菱化学製、Ｍｗ６００００
（Ｄ－２）ビスフェノールＦ型構造を有するフェノキシ樹脂、商品名ＦＸ３１６、東都化成製、Ｍｗ４５０００
（Ｄ´－１）ビスフェノールＡ型エポキシ樹脂、商品名ｊＥＲ１０１０、三菱化学製、Ｍｗ５５００
（Ｄ´－２）ポリビニルホルマール、商品名ビニレックＥ、チッソ製、Ｍｗ１２６０００
　上記の手順で作製した加圧実装用ＮＣＦを用いて、以下の評価を実施した。
（フィルム形成性）
　以下に示す手順で折り曲げ試験を実施した。
　上記の手順で作製した加圧実装用ＮＣＦを１８０°折りまげた後、割れの有無を確認する。
　折り曲げ試験の実施後のフィルムにおける割れの有無を確認した。割れが認められなかった場合は○とし、割れが認められた場合は×とした。
（視認性）
　上記の手順で作製した加圧実装用ＮＣＦをマークを有するチップ上にラミネート（温度８０℃、圧力０．４ＭＰａ）し、目視により評価した。チップ上のマークが確認できた場合は○とし、チップ上のマークが確認できない場合は×とした。
（１２０℃粘度（２６０℃前））
　ＴＡインスツルメント社製　ＡＲＥＳ－Ｇ２で測定条件・８ｍｍアルミパラレルプレート・周波数１Ｈｚ　・ｓｔｒａｉｎ　０．０００４～１０００％で測定した一番低い値を１２０℃における溶融粘度とした。
（１２０℃粘度（２６０℃後））
　２６０℃で１０秒間加熱した後、上記と同様の手順で１２０℃における溶融粘度を測定した。
（硬化後の流動性）
　プレッシャーオーブンを用いて、加圧条件下で加熱硬化した後、流動性を以下の手順で評価した。加圧条件下での加熱硬化は、圧力０．７ＭＰａ、温度１７５℃で３時間実施した。針による指針により、流動性がないことを確認した。
（プレッシャーオーブン後のボイド）
　上記の手順で加圧条件下で加熱硬化した後、ボイドの有無を超音波顕微鏡を用いて観察した。観察エリア内におけるボイド面積が５％以下の場合は合格とし、５％より大きい場合は不合格とした。
（信頼性（プレッシャーオーブン＋リフロー））
　上記の手順で加圧条件下で加熱硬化した後、温度２５５℃に加熱してリフローさせた後、ボイドの有無を超音波顕微鏡を用いて観察した。観察エリア内におけるボイド面積が５％以下の場合は合格とし、５％より大きい場合は不合格とした。
　なお、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）については、同一サンプルを５つ作成し、これら５つのサンプルについて評価を実施した。
　結果を下記表に示す。
Figure JPOXMLDOC01-appb-T000010
Figure JPOXMLDOC01-appb-T000011
Figure JPOXMLDOC01-appb-T000012
Figure JPOXMLDOC01-appb-T000013
　実施例１～１１は、いずれもフィルム形成性、視認性、プレッシャーオープン後のボイド、信頼性（プレッシャーオーブン＋リフロー）が良好であった。なお、実施例２は、実施例１に対し（Ａ）成分の固形エポキシ樹脂を変えた実施例である。実施例３は、実施例１に対し（Ｂ）成分の液状芳香族アミンを変えた実施例である。実施例４は、（Ｃ）成分のシリカフィラーの粒径を変えた実施例である。実施例５は、実施例１に対し（Ｄ）成分の高分子樹脂を変えた実施例である。実施例６は、実施例５に対し（Ｄ）成分の配合割合を変えた実施例である。実施例７は、実施例１に対し（Ｄ）成分の配合割合を変えた実施例である。実施例８，９は、実施例１に対し、（Ａ）成分に対する（Ｂ）成分の配合割合を変えた実施例である。実施例１０，１１は、実施例１に対し、（Ｃ）成分の配合割合を変えた実施例である。比較例１は、（Ｄ）成分の配合割合が多く、１２０℃における溶融粘度（２６０℃前、２６０℃後）が本発明の条件を満たさない例であり、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）が劣っていた。比較例２は、本発明以外の構造の液状芳香族アミンを使用した例であり、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）が劣っていた。比較例３は、（Ｂ）成分の配合割合が少ない例であり、硬化後に流動性が見られた。比較例４は、エポキシ当量が低い固形エポキシ樹脂を使用した例であり、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）が劣っていた。比較例５は、エポキシ当量が高い固形エポキシ樹脂を使用し、１２０℃における溶融粘度（２６０℃前）が本発明の条件を満たさない例であり、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）が劣っていた。比較例６は、（Ｂ）成分の代わりにノボラックフェノール樹脂を使用した例であり、硬化後に流動性が見られた。比較例７は、Ｍｗが低い高分子樹脂を使用した例であり、フィルム形成性が劣っていた。比較例８は、Ｍｗが高い高分子樹脂を使用し、１２０℃における溶融粘度（２６０℃前、２６０℃後）が本発明の条件を満たさない例であり、プレッシャーオーブン後のボイドと信頼性（プレッシャーオーブン＋リフロー）が劣っていた。比較例９は、（Ｃ）成分のシリカフィラーの配合割合が多く、１２０℃における溶融粘度（２６０℃前、２６０℃後）が本発明の条件を満たさない例であり、全ての評価項目が劣っていた。

Claims (6)

  1. 　（Ａ）固形エポキシ樹脂、
    　（Ｂ）室温で液状であり、下記式１、式２の構造の少なくとも一方を含む芳香族アミン、
    Figure JPOXMLDOC01-appb-C000001
    Figure JPOXMLDOC01-appb-C000002
     　（Ｃ）シリカフィラー、
    　（Ｄ）質量平均分子量（Ｍｗ）が６０００から１０００００の高分子樹脂を含み、
    　前記（Ａ）成分のエポキシ樹脂のエポキシ当量が２２０～３４０であり、
    　前記（Ａ）成分１００質量部に対し、前記（Ｂ）成分を６～２７質量部含有し、
    　前記（Ｃ）成分の含有量が、各成分の合計質量１００質量部に対して、２０～６５質量部であり、
    　前記（Ａ）成分、および前記（Ｄ）の含有割合（（Ａ）：（Ｄ））が、９９：１～６５：３５であり、
    　１２０℃における溶融粘度が１００Ｐａ・ｓ以下であり、
    　２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度が２００Ｐａ・ｓ以下であることを特徴とする加圧雰囲気下硬化用半導体封止先供給型フィルム。
  2. 　１２０℃における溶融粘度が１００Ｐａ・ｓ以下であり、２６０℃以上で５～９０秒間加熱した後の１２０℃における溶融粘度上昇率が５０％以下である、請求項１に記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
  3. 　前記（Ｄ）成分の高分子量樹脂がビスフェノールＦ構造を有するフェノキシ樹脂である、請求項１または２に記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
  4. 　前記（Ｃ）成分のシリカフィラーの平均粒径が１μｍ以下である、請求項１～３のいずれかに記載の加圧雰囲気下硬化用半導体封止先供給型フィルム。
  5. 　請求項１～４のいずれかの記載の加圧雰囲気下硬化用半導体封止先供給型フィルムの硬化物。
  6. 　請求項１～４のいずれかに記載の加圧雰囲気下硬化用半導体封止先供給型フィルムを用いた半導体装置。
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