JPWO2010035313A1 - 金属酸化膜の成膜方法および金属酸化膜の成膜装置 - Google Patents
金属酸化膜の成膜方法および金属酸化膜の成膜装置 Download PDFInfo
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Abstract
Description
図1は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
図6は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
図7は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
図9は、本実施の形態に係る金属酸化膜の成膜装置の概略構成を示す図である。
Claims (16)
- (A)金属を含む溶液(4,8)をミスト化させる工程と、
(B)基板(2)を加熱する工程と、
(C)前記工程(B)中の前記基板の第一の主面上に、前記工程(A)においてミスト化された前記溶液と、オゾンとを供給する工程とを、備えている、
ことを特徴とする金属酸化膜の成膜方法。 - (V)金属を含む溶液(4,8)をミスト化させる工程と、
(W)基板(2)の第一の主面上に、前記工程(V)においてミスト化された前記溶液と、酸素またはオゾンとを供給する工程と、
(X)前記酸素または前記オゾンに紫外光を照射する工程とを、備えている、
ことを特徴とする金属酸化膜の成膜方法。 - (V)金属を含む溶液(4,8)をミスト化させる工程と、
(W)基板(2)の第一の主面上に、前記工程(V)においてミスト化された前記溶液と、酸素またはオゾンとを供給する工程と、
(W)前記酸素または前記オゾンをプラズマ化する工程とを、備えている、
ことを特徴とする金属酸化膜の成膜方法。 - 前記工程(W)は、
加熱されている前記基板に、前記酸素または前記オゾンを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の金属酸化膜の成膜方法。 - 前記金属は、
チタン、亜鉛、インジウムおよびスズの内の少なくとも何れか1つである、
ことを特徴とする請求項1乃至請求項3のいずれかに記載の金属酸化膜の成膜方法。 - 前記溶液には、
ホウ素、窒素、フッ素、マグネシウム、アルミニウム、燐、塩素、ガリウム、砒素、ニオブ、インジウムおよびアンチモンの何れか1つが、少なくとも含まれている、
ことを特徴とする請求項5に記載の金属酸化膜の成膜方法。 - 前記工程(A)または(V)は、
2種類以上の前記溶液を、各々ミスト化させる工程であり、
前記工程(C)または(W)は、
異なる前記溶液を、同時にまたは別々に、供給する工程である、
ことを特徴とする請求項1乃至請求項3のいずれかに記載の金属酸化膜の成膜方法。 - 前記工程(C)は、
前記溶液と前記オゾンとを、同時にまたは別々に、供給する工程である、
ことを特徴とする請求項1に記載の金属酸化膜の成膜方法。 - 前記工程(W)は、
前記溶液と前記酸素または前記オゾンとを、同時にまたは別々に、供給する工程である、
ことを特徴とする請求項2または請求項3に記載の金属酸化膜の成膜方法。 - 前記工程(C)は、
前記溶液と前記オゾンとを、異なる経路(L1,L2,L4)を通して供給する工程である、
ことを特徴とする請求項1に記載の金属酸化膜の成膜方法。 - 前記工程(W)は、
前記溶液と前記酸素または前記オゾンとを、異なる経路(L1,L2,L4)を通して供給する工程である、
ことを特徴とする請求項2または請求項3に記載の金属酸化膜の成膜方法。 - 前記工程(C)は、
大気圧に配設されている前記基板に、前記溶液と前記オゾンとを供給する工程である、
ことを特徴とする請求項1に記載の金属酸化膜の成膜方法。 - 前記工程(W)は、
大気圧に配設されている前記基板に、前記溶液と前記酸素または前記オゾンとを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の金属酸化膜の成膜方法。 - 前記工程(C)は、
減圧環境下に配設されている前記基板に、前記溶液と前記オゾンとを供給する工程である、
ことを特徴とする請求項1に記載の金属酸化膜の成膜方法。 - 前記工程(W)は、
減圧環境下に配設されている前記基板に、前記溶液と前記酸素または前記オゾンとを供給する工程である、
ことを特徴とする請求項2または請求項3に記載の金属酸化膜の成膜方法。 - 請求項1乃至請求項15のいずれかに記載の金属酸化膜の成膜方法を実施する、
ことを特徴とする金属酸化膜の成膜装置。
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DE112010005624T5 (de) * | 2010-06-01 | 2013-03-21 | Kyoto University | Anlage zur Bildung eines Metalloxidfilmes, Verfahren zur Bildung eines Metalloxidfilmes und Metalloxidfilm |
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JP2002146536A (ja) | 2000-11-08 | 2002-05-22 | Japan Science & Technology Corp | 酸化スズ薄膜の低温形成方法 |
JP4088427B2 (ja) * | 2001-06-28 | 2008-05-21 | 株式会社神戸製鋼所 | プラズマ成膜装置 |
ATE549430T1 (de) * | 2003-06-17 | 2012-03-15 | Basf Se | Verfahren zur mikrowellenbeschichtung eines organischen materials mit metalloxid |
US7405880B2 (en) * | 2004-02-12 | 2008-07-29 | Api Nanofabrication And Research Corporation | Multilayer optical filter |
JP4705340B2 (ja) * | 2004-06-14 | 2011-06-22 | 日本曹達株式会社 | 酸化インジウム膜の製造方法 |
JP2007109406A (ja) | 2005-10-11 | 2007-04-26 | Kochi Univ Of Technology | タッチパネル用酸化亜鉛系透明導電膜付き基板 |
JP2007144297A (ja) | 2005-11-28 | 2007-06-14 | Masaharu Kaneko | 薄膜形成方法 |
US7582161B2 (en) * | 2006-04-07 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited titanium-doped indium oxide films |
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2008
- 2008-09-24 DE DE112008004012T patent/DE112008004012T5/de not_active Withdrawn
- 2008-09-24 CN CN2008801313222A patent/CN102165096A/zh active Pending
- 2008-09-24 WO PCT/JP2008/067164 patent/WO2010035313A1/ja active Application Filing
- 2008-09-24 US US13/059,128 patent/US20110151619A1/en not_active Abandoned
- 2008-09-24 JP JP2010530644A patent/JP5271355B2/ja active Active
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JP5271355B2 (ja) | 2013-08-21 |
WO2010035313A1 (ja) | 2010-04-01 |
KR101333437B1 (ko) | 2013-11-26 |
DE112008004012T5 (de) | 2011-09-29 |
CN102165096A (zh) | 2011-08-24 |
US20110151619A1 (en) | 2011-06-23 |
KR20110056522A (ko) | 2011-05-30 |
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