JPWO2009013914A1 - SiCエピタキシャル基板およびその製造方法 - Google Patents
SiCエピタキシャル基板およびその製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 247
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000013078 crystal Substances 0.000 claims abstract description 266
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 56
- 239000002994 raw material Substances 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 98
- 125000006850 spacer group Chemical group 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 64
- 229910010271 silicon carbide Inorganic materials 0.000 description 238
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 234
- 230000008646 thermal stress Effects 0.000 description 11
- 239000007791 liquid phase Substances 0.000 description 10
- 238000005498 polishing Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000001902 propagating effect Effects 0.000 description 6
- 239000004575 stone Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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Abstract
Description
11 単結晶SiC基板
12 バッファ層(第1の単結晶SiCエピタキシャル膜)
13 活性層(第2の単結晶SiCエピタキシャル膜)
22 支持基板
23 スペーサー
24 炭素原料供給板
25 Si基板
26 重石
27 金属Si融液層
Claims (10)
- 単結晶SiC基板と、上記単結晶SiC基板上に形成された第1のSiCエピタキシャル膜からなるバッファ層と、上記バッファ層上に形成された第2のSiCエピタキシャル膜からなる活性層とを備えてなる単結晶SiCエピタキシャル基板であって、
上記第1のSiCエピタキシャル膜は、上記単結晶SiC基板と上記単結晶SiC基板に所定の間隔で対向するように配置された炭素原料供給板との間に金属Si融液層を介在させた状態で熱処理を行うことによってエピタキシャル成長した膜であり、
上記第2のSiCエピタキシャル膜は、気相成長法によってエピタキシャル成長した膜であることを特徴とする単結晶SiCエピタキシャル基板。 - 上記第1のSiCエピタキシャル膜の伝導型は、上記単結晶SiC基板の伝導型と同じであることを特徴とする請求項1に記載の単結晶SiCエピタキシャル基板。
- 上記単結晶SiC基板は、off角を設けられた基板であることを特徴とする請求項1に記載の単結晶SiCエピタキシャル基板。
- 上記第2のSiCエピタキシャル膜は、ステップ制御エピタキシャル法によって生成されたものであることを特徴とする請求項3に記載の単結晶SiCエピタキシャル基板。
- 単結晶SiC基板と、上記単結晶SiC基板上に形成された第1のSiCエピタキシャル膜からなるバッファ層と、上記バッファ層上に形成された第2のSiCエピタキシャル膜からなる活性層とを備えてなる単結晶SiCエピタキシャル基板の製造方法であって、
単結晶SiC基板と炭素原料供給板との間に所定の厚さの金属Si融液層を介在させた状態で熱処理を行うことによって単結晶SiCをエピタキシャル成長させて上記第1のSiCエピタキシャル膜を生成する第1膜生成工程と、
上記第1のエピタキシャル膜上に気相成長法によって単結晶SiCをエピタキシャル成長させて上記第2のSiCエピタキシャル膜を生成する第2膜生成工程とを含むことを特徴とする単結晶SiCエピタキシャル基板の製造方法。 - 上記第1膜生成工程は、上記金属Si融液層の温度をSiの融点以上の温度に設定される所定温度に昇温させる昇温工程と、上記所定温度から500℃以下の温度に降温させる降温工程とを含み、
上記昇温工程における少なくともSiの融点から上記成長温度までの上記金属Si融液層の温度の変化速度、および上記降温工程における上記金属Si融液層の温度の変化速度を、20℃/分以下にすることを特徴とする請求項5に記載の単結晶SiCエピタキシャル基板の製造方法。 - 上記第1膜生成工程において、上記単結晶SiC基板として表面を平坦化処理された単結晶SiC基板を用い、この単結晶SiC基板における平坦化処理された面に上記第1のSiCエピタキシャル膜を生成することを特徴とする請求項5に記載の単結晶SiCエピタキシャル基板の製造方法。
- 上記単結晶SiC基板としてoff角を設けられた基板を用い、かつ、上記単結晶SiC基板と上記炭素原料供給板との対向領域における上記off角の傾斜方向両端部にスペーサーを設けることによって上記単結晶SiC基板と上記炭素原料供給板との間隔を一定に保った状態で上記第1膜生成工程を行うことを特徴とする請求項5に記載の単結晶SiCエピタキシャル基板の製造方法。
- 単結晶SiC基板と、上記単結晶SiC基板上に形成されたSiCエピタキシャル膜とを含む単結晶SiCエピタキシャル基板の製造方法であって、
単結晶SiC基板と炭素原料供給板との間に所定の厚さの金属Si融液層を介在させた状態で熱処理を行うことによって単結晶SiCをエピタキシャル成長させて上記SiCエピタキシャル膜を生成する膜生成工程を含み、
上記膜生成工程は、上記金属Si融液層の温度をSiの融点以上の温度に設定される所定温度に昇温させる昇温工程と、上記所定温度から500℃以下の温度に降温させる降温工程とを含み、
上記昇温工程におけるSiの融点から上記成長温度までの上記金属Si融液層の温度の変化速度および上記降温工程における上記金属Si融液層の温度の変化速度を、20℃/分以下にすることを特徴とする単結晶SiCエピタキシャル基板の製造方法。 - 単結晶SiC基板と、上記単結晶SiC基板上に形成されたSiCエピタキシャル膜とを含む単結晶SiCエピタキシャル基板の製造方法であって、
単結晶SiC基板と炭素原料供給板との間に所定の厚さの金属Si融液層を介在させた状態で熱処理を行うことによって単結晶SiCをエピタキシャル成長させて上記SiCエピタキシャル膜を生成する膜生成工程を含み、
上記単結晶SiC基板としてoff角を設けられた基板を用い、かつ、上記単結晶SiC基板と上記炭素原料供給板との対向領域における上記off角の傾斜方向両端部にスペーサーを設けることによって上記単結晶SiC基板と上記炭素原料供給板との間隔を一定に保った状態で上記第1膜生成工程を行うことを特徴とする単結晶SiCエピタキシャル基板の製造方法。
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WO2010101016A1 (ja) * | 2009-03-05 | 2010-09-10 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
TWI508327B (zh) * | 2010-03-05 | 2015-11-11 | Namiki Precision Jewel Co Ltd | An internal modified substrate for epitaxial growth, a multilayer film internal modified substrate, a semiconductor device, a semiconductor bulk substrate, and the like |
WO2011135669A1 (ja) * | 2010-04-27 | 2011-11-03 | 株式会社エコトロン | SiC基板の作製方法 |
GB2484506A (en) * | 2010-10-13 | 2012-04-18 | Univ Warwick | Heterogrowth |
WO2013150587A1 (ja) * | 2012-04-02 | 2013-10-10 | 株式会社エコトロン | 単結晶SiCエピタキシャル基板の製造方法および単結晶SiCエピタキシャル基板 |
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JP4482642B2 (ja) | 2003-10-21 | 2010-06-16 | 学校法人関西学院 | 単結晶炭化ケイ素成長方法 |
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JP4954593B2 (ja) | 2006-04-18 | 2012-06-20 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法、及び得られたエピタキシャル炭化珪素単結晶基板を用いてなるデバイス |
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