JPWO2008099811A1 - ケイ素含有膜形成用材料、ならびにケイ素含有絶縁膜およびその形成方法 - Google Patents
ケイ素含有膜形成用材料、ならびにケイ素含有絶縁膜およびその形成方法 Download PDFInfo
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- JPWO2008099811A1 JPWO2008099811A1 JP2008558085A JP2008558085A JPWO2008099811A1 JP WO2008099811 A1 JPWO2008099811 A1 JP WO2008099811A1 JP 2008558085 A JP2008558085 A JP 2008558085A JP 2008558085 A JP2008558085 A JP 2008558085A JP WO2008099811 A1 JPWO2008099811 A1 JP WO2008099811A1
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- silicon
- film
- general formula
- halogen atom
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 95
- 239000010703 silicon Substances 0.000 title claims abstract description 95
- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims description 32
- -1 organosilane compound Chemical class 0.000 claims abstract description 59
- 125000005843 halogen group Chemical group 0.000 claims abstract description 34
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 32
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 30
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 29
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 28
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims abstract description 27
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 27
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 claims abstract description 26
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 25
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 229910052760 oxygen Inorganic materials 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229940125904 compound 1 Drugs 0.000 claims description 2
- 229940125782 compound 2 Drugs 0.000 claims description 2
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 2
- 239000010408 film Substances 0.000 description 161
- 230000015572 biosynthetic process Effects 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 18
- 229910052749 magnesium Inorganic materials 0.000 description 15
- 239000011777 magnesium Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 238000004817 gas chromatography Methods 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- OOCUOKHIVGWCTJ-UHFFFAOYSA-N chloromethyl(trimethyl)silane Chemical compound C[Si](C)(C)CCl OOCUOKHIVGWCTJ-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 238000004508 fractional distillation Methods 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 229910052745 lead Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052744 lithium Inorganic materials 0.000 description 5
- 159000000003 magnesium salts Chemical class 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229960002050 hydrofluoric acid Drugs 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QONBJECARKIWTR-UHFFFAOYSA-N [C].[O].[Si].[Si] Chemical group [C].[O].[Si].[Si] QONBJECARKIWTR-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- GFDAFHTWDMJGEF-UHFFFAOYSA-N 2-chloroethyl(triethyl)silane Chemical compound CC[Si](CC)(CC)CCCl GFDAFHTWDMJGEF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- QZOVMCPHIQVUGV-UHFFFAOYSA-N [Si].[C].[Si] Chemical group [Si].[C].[Si] QZOVMCPHIQVUGV-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 2
- SNKQYPSXYSOERI-UHFFFAOYSA-N ethenyl-dimethoxy-(trimethylsilylmethyl)silane Chemical compound CO[Si](C=C)(OC)C[Si](C)(C)C SNKQYPSXYSOERI-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000412 polyarylene Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZUGOSPHJWZAGBH-UHFFFAOYSA-N CO[SiH](OC)C=C Chemical compound CO[SiH](OC)C=C ZUGOSPHJWZAGBH-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010059866 Drug resistance Diseases 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ZPECUSGQPIKHLT-UHFFFAOYSA-N bis(ethenyl)-dimethoxysilane Chemical compound CO[Si](OC)(C=C)C=C ZPECUSGQPIKHLT-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- BFYCPCLOLWNFNR-UHFFFAOYSA-N diethoxy-ethyl-(2-triethylsilylethoxy)silane Chemical compound CCO[Si](CC)(OCC)OCC[Si](CC)(CC)CC BFYCPCLOLWNFNR-UHFFFAOYSA-N 0.000 description 1
- YPRBPBFDEXNUHF-UHFFFAOYSA-N diethoxy-ethyl-(2-triethylsilylethyl)silane Chemical compound CCO[Si](CC)(OCC)CC[Si](CC)(CC)CC YPRBPBFDEXNUHF-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- PFOUEFOYZCMSHB-UHFFFAOYSA-N dimethoxy-methyl-(trimethylsilylmethoxy)silane Chemical compound CO[Si](C)(OC)OC[Si](C)(C)C PFOUEFOYZCMSHB-UHFFFAOYSA-N 0.000 description 1
- KFFCPURJWSJKMB-UHFFFAOYSA-N dimethoxy-methyl-(trimethylsilylmethyl)silane Chemical compound CO[Si](C)(OC)C[Si](C)(C)C KFFCPURJWSJKMB-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WUDYGFJOADMETG-UHFFFAOYSA-N ethenyl-dimethoxy-(trimethylsilylmethoxy)silane Chemical compound CO[Si](OC)(C=C)OC[Si](C)(C)C WUDYGFJOADMETG-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
また、上記ケイ素含有膜形成用材料は、上記一般式(1)で表される有機シラン化合物を0.1%〜70%(モル比率)含むことができる。
酸素が存在する雰囲気下において下記一般式(3)で表される化合物1と下記一般式(4)で表される化合物2とを反応させる工程を含む。
1.1.ケイ素含有膜形成用材料
本発明の一実施形態にかかるケイ素含有膜形成用材料は、下記一般式(1)で表される少なくとも1種の有機シラン化合物を含む。
上記一般式(1)で表される有機シラン化合物及び上記一般式(2)で表される有機シラン化合物の製造方法は、特に限定されるものではないが、例えば、下記一般式(3)で表される有機シラン化合物と下記一般式(4)で示される有機シラン化合物とを金属存在下でカップリング反応させる方法を挙げることができる。
上記一般式(3)および(4)において、R12〜R17で示される炭素数1〜4のアルキル基としては、上記一般式(1)においてR1〜R6で示される炭素数1〜4のアルキル基として例示したものが挙げられ、X,Yで示されるハロゲン原子としては、例えば、臭素原子、塩素原子が挙げられる。
本発明の一実施形態に係るケイ素含有膜(絶縁膜)の形成方法は、限定されるものではないが、化学気相成長法(CVD法)による行うことが好ましく、特にプラズマ励起CVD法(PECVD法)により行うことが好ましい。PECVD法装置において、上記一般式(1)で表される有機シラン化合物を気化器により気化させて、成膜チャンバー内に導入し、高周波電源により成膜チャンバー内の電極に印加し、プラズマを発生させることにより、成膜チャンバー内の基材にプラズマCVD膜を形成することができる。
本発明の一実施形態に係るケイ素含有膜は上記形成方法により得ることができる。
以下、本発明を、実施例を挙げてさらに具体的に説明する。本発明は以下の実施例に限定されるものではない。なお、実施例および比較例中の「部」および「%」は、特記しない限り、それぞれ重量部および重量%であることを示している。
各種の評価は、次のようにして行った。
精製した有機シラン化合物中の水分量および不純物含有量は、カールフィッシャー水分計(平沼産業社製、微量水分測定装置AQ−7)および原子吸光分光光度計(日立ハイテク社製、偏光ゼーマン原子吸光分光光度計Z−5700)を用いて測定した。
8インチシリコンウエハ上に、PECVD法により後述する条件によりケイ素含有絶縁膜を形成した。得られた膜に、蒸着法によりアルミニウム電極パターンを形成し、比誘電率測定用サンプルを作成した。該サンプルについて、周波数100kHzの周波数で、横河・ヒューレットパッカード(株)製、HP16451B電極およびHP4284AプレシジョンLCRメータを用いてCV法により当該絶縁膜の比誘電率を測定した。Δkは、24℃、40%RHの雰囲気で測定した比誘電率(k@RT)と、200℃、乾燥窒素雰囲気下で測定した比誘電率(k@200℃)との差(Δk=k@RT−k@200℃)である。かかるΔkにより、主に、膜の吸湿による比誘電率の上昇分を評価することができる。通常、Δkが0.15以上であると、吸水性の高い有機シリカ膜であるといえる。
MTS社製超微少硬度計(Nanoindentator XP)にバーコビッチ型圧子
を取り付け、得られた絶縁膜のユニバーサル硬度を求めた。また、弾性率は連続剛性測定法により測定した。
膜の残留応力は以下の方法により測定された。
40℃で30日保存した有機シラン化合物を、GC(装置本体:Agilent technologies社製6890N、カラム:Supelco社製SPB−35)により純度を求めた。保存前後の純度変化が0.5%未満であれば、保存安定性が良好であると判断する。
ケイ素含有絶縁膜が形成された8インチウエハを、室温で0.2%の希フッ酸水溶液中に3分間浸漬し、浸漬前後のケイ素含有膜の膜厚変化を観察した。下記に定義する残膜率が99%以上であれば、薬液耐性が良好であると判断する。
A:残膜率が99%以上である。
4.2.1.合成例1
冷却コンデンサーおよび滴下ロートを備えた3つ口フラスコを50℃で減圧乾燥した。次いで、フラスコ内にマグネシウム20gおよびTHF500mlを加え、室温で撹拌しながら(クロロメチル)トリメチルシラン25gを加えた。しばらく撹拌し、発熱を確認した後、滴下ロートから(クロロメチル)トリメチルシラン55gを30分かけて加えた。滴下終了後、液温が室温に戻ったのを確認した後、フラスコにTHF250mlおよびメチルトリメトキシシラン237gの混合液を加え、続いて、70℃で6時間加熱還流することにより、反応を完結させた。反応液を室温まで冷却した後、生成したマグネシウム塩および未反応のマグネシウムを濾別し、濾液を分留することで、[(トリメチルシリル)メチル]メチルジメトキシシラン75g(収率70モル%)および[(トリメチルシリル)メトキシ]メチルジメトキシシラン1.2g(収率0.9モル%)を含む組成物Aを得た(GC法で確認)なお、上記化合物以外の化合物は組成物A全体の1.0モル%以下であった(GC法で確認)。また、残存水分量は80ppm、ケイ素、炭素、酸素、および水素以外の元素の含有量(金属不純物含有量)は、Na=1.5ppb、K=1.1ppb、Fe=1.7ppbであり、Li、Mg、Cr、Ag、Cu、Zn、Mn、Co、Ni、Ti、Zr、Al、Pb、Sn、Wの各元素は検出限界値(0.2ppb)以下であった。以上の結果より、本合成例で得られた有機シラン化合物は、絶縁膜形成用材料としての十分な純度を備えていることが確認された。
冷却コンデンサーおよび滴下ロートを備えた3つ口フラスコを50℃で減圧乾燥した。次いで、フラスコ内にマグネシウム20gおよびTHF500mlを加え、室温で撹拌しながら(クロロメチル)トリメチルシラン25gを加えた。しばらく撹拌し、発熱を確認した後、滴下ロートから(クロロメチル)トリメチルシラン55gを30分間かけて加えた。滴下終了後、液温が室温に戻ったのを確認した後、フラスコにTHF250mlおよびビニルトリメトキシシラン258gの混合液を加え、続いて、70℃で6時間加熱還流することにより、反応を完結させた。反応液を室温まで冷却した後、生成したマグネシウム塩および未反応のマグネシウムを濾別し、濾液を分留することで、[(トリメチルシリル)メチル]ビニルジメトキシシラン80g(収率65モル%)および[(トリメチルシリル)メトキシ]ビニルジメトキシシラン2.3g(収率1.6モル%)を含む組成物Bを得た(GC法で確認)。なお、上記化合物以外の化合物は組成物B全体の1.0モル%以下であった(GC法で確認)。また、残存水分量は70ppm、ケイ素、炭素、酸素、および水素以外の元素の含有量(金属不純物含有量)は、Na=1.5ppb、K=0.9ppb、Fe=0.7ppbであり、Li、Mg、Cr、Ag、Cu、Zn、Mn、Co、Ni、Ti、Zr、Al、Pb、Sn、Wの各元素は検出限界値(0.2ppb)以下であった。以上の結果より、本合成例で得られた有機シラン化合物は、絶縁膜形成用材料としての十分な純度を備えていることが確認された。
冷却コンデンサーおよび滴下ロートを備えた3つ口フラスコを50℃で減圧乾燥した。次いで、フラスコ内にマグネシウム20gおよびTHF500mlを加え、室温で撹拌しながら(クロロエチル)トリエチルシラン25gを加えた。しばらく撹拌し、発熱を確認した後、滴下ロートから(クロロエチル)トリエチルシラン91gを30分間かけて加えた。滴下終了後、液温が室温に戻ったのを確認した後、フラスコにTHF250mlおよびエチルトリエトキシシラン375gの混合液を加え、続いて、70℃で6時間加熱還流することにより、反応を完結させた。反応液を室温まで冷却した後、生成したマグネシウム塩および未反応のマグネシウムを濾別し、濾液を分留することで、[(トリエチルシリル)エチル]エチルジエトキシシラン113g(収率60モル%)および[(トリエチルシリル)エトキシ]エチルジエトキシシラン1.9g(収率1.0モル%)を含む組成物Cを得た(GC法で確認)。なお、上記化合物以外の化合物は組成物C全体の1.0モル%以下であった(GC法で確認)。また、残存水分量は85ppm、ケイ素、炭素、酸素、および水素以外の元素の含有量(金属不純物含有量)は、Na=1.1ppb、K=0.5ppb、Fe=0.4ppbであり、Li、Mg、Cr、Ag、Cu、Zn、Mn、Co、Ni、Ti、Zr、Al、Pb、Sn、Wの各元素は検出限界値(0.2ppb)以下であった。以上の結果より、本合成例で得られた有機シラン化合物は、絶縁膜形成用材料としての十分な純度を備えていることが確認された。
冷却コンデンサーおよび滴下ロートを備えた3つ口フラスコを50℃で減圧乾燥した。次いで、フラスコ内にマグネシウム20gおよびTHF500mlを加え、室温で撹拌しながら(クロロメチル)トリメチルシラン25gを加えた。しばらく撹拌し、発熱を確認した後、滴下ロートから(クロロメチル)トリメチルシラン55gを30分かけて加えた。滴下終了後、液温が室温に戻ったのを確認した後、氷バスでフラスコを冷却しながら乾燥圧縮空気(日本酸素製)を0.1L/minの流量で5分間バブリングを行った。バブリング後、フラスコにTHF250mlおよびメチルトリメトキシシラン237gの混合液を加え、続いて、70℃で6時間加熱還流することにより、反応を完結させた。反応液を室温まで冷却した後、生成したマグネシウム塩および未反応のマグネシウムを濾別し、濾液を分留することで、[(トリメチルシリル)メチル]メチルジメトキシシラン45.0g(収率42モル%)および[(トリメチルシリル)メトキシ]メチルジメトキシシラン15g(収率11.3モル%)を含む組成物Dを得た(GC法で確認)。なお、上記化合物以外の化合物は組成物C全体の1.0モル%以下であった(GC法で確認)。また、残存水分量は30ppm、ケイ素、炭素、酸素、および水素以外の元素の含有量(金属不純物含有量)は、Na=2.4ppb、K=1.0ppb、Fe=1.2ppbであり、Li、Mg、Cr、Ag、Cu、Zn、Mn、Co、Ni、Ti、Zr、Al、Pb、Sn、Wの各元素は検出限界値(0.2ppb)以下であった。以上の結果より、本合成例で得られた有機シラン化合物は、絶縁膜形成用材料としての十分な純度を備えていることが確認された。
冷却コンデンサーおよび滴下ロートを備えた3つ口フラスコを50℃で減圧乾燥した。次いで、フラスコ内にマグネシウム20gおよびTHF500mlを加え、室温で撹拌しながら(クロロメチル)トリメチルシラン25gを加えた。しばらく撹拌し、発熱を確認した後、滴下ロートから(クロロメチル)トリメチルシラン55gを30分間かけて加えた。滴下終了後、液温が室温に戻ったのを確認した後、氷バスでフラスコを冷却しながら乾燥圧縮空気(日本酸素製)を0.5L/minの流量で15分間バブリングを行った。バブリング後、THF250mlおよびビニルトリメトキシシラン258gの混合液を滴下しながら加え、続いて70℃で6時間加熱還流することにより、反応を完結させた。反応液を室温まで冷却した後、生成したマグネシウム塩および未反応のマグネシウムを濾別し、濾液を分留することで、[(トリメチルシリル)メチル]ビニルジメトキシシラン42.0g(収率34.3モル%)および[(トリメチルシリル)メトキシ]ビニルジメトキシシラン57.5g(収率40.0モル%)を含む組成物Eを得た(GC法で確認)。なお、上記化合物以外の化合物は組成物C全体の1.0モル%以下であった(GC法で確認)。また、残存水分量は80ppm、ケイ素、炭素、酸素、および水素以外の元素の含有量(金属不純物含有量)は、Na=1.4ppb、K=2.9ppb、Fe=3.8ppbであり、Li、Mg、Cr、Ag、Cu、Zn、Mn、Co、Ni、Ti、Zr、Al、Pb、Sn、Wの各元素は検出限界値(0.2ppb)以下であった。以上の結果より、本合成例で得られた有機シラン化合物は、絶縁膜形成用材料としての十分な純度を備えていることが確認された。
4.3.1.実施例1
サムコ社製プラズマCVD装置PD−220Nを用い、組成物Aのガス流量25(sccm)、Arのガス流量3(sccm)、RF電力250W、基板温度380℃、反応圧力10Torrの条件でプラズマCVD法により、シリコン基板上にケイ素含有膜(1−1)0.5μmを成膜した。
実施例1と同一の装置を用い、シリカ源として組成物Bを用いた以外は実施例1と同一条件にて、シリコン基板上にケイ素含有膜(1−2)0.5μmを成膜した。
実施例1と同一の装置を用い、シリカ源として組成物Cを用いた以外は実施例1と同一条件にて、シリコン基板上にケイ素含有膜(1−3)0.5μmを成膜した。
実施例1と同一の装置を用い、シリカ源として組成物Dを用いた以外は実施例1と同一条件にて、シリコン基板上にケイ素含有膜(1−4)0.5μmを成膜した。
実施例1と同一の装置を用い、シリカ源として組成物Eを用いた以外は実施例1と同一条件にて、シリコン基板上にケイ素含有膜(1−5)0.5μmを成膜した。
実施例1と同一の装置を用い、シリカ源としてジメトキシジメチルシランを用いた以外は比較例1と同一条件にて、シリコン基板上にケイ素含有膜(2)500nmを成膜した。
実施例1と同一の装置を用い、シリカ源としてジビニルジメトキシシランを用いた以外は実施例1と同一条件にて、シリコン基板上にケイ素含有膜(2−2)500nmを成膜した。
Claims (10)
- 上記一般式(1)で表される有機シラン化合物を0.1%〜70%(モル比率)含む、請求項1に記載のケイ素含有膜形成用材料。
- ケイ素、炭素、酸素、および水素を含む絶縁膜を形成するために用いられる、請求項1ないし3のいずれかに記載のケイ素含有膜形成用材料。
- ケイ素、炭素、酸素、および水素以外の元素の含有量が10ppb未満であり、かつ、含水分量が100ppm未満である、請求項1ないし4のいずれかに記載のケイ素含有膜形成用材料。
- 請求項1ないし5のいずれかに記載のケイ素含有膜形成用材料を用いて形成された、ケイ素含有絶縁膜。
- 化学気相成長法により形成された、請求項6に記載のケイ素含有絶縁膜。
- 請求項1ないし5のいずれかに記載のケイ素含有膜形成用材料を化学気相成長法により基板に堆積させて堆積膜を形成する工程と、
前記堆積膜について、加熱、電子線照射、紫外線照射、および酸素プラズマから選ばれる少なくとも1種の硬化処理を行う工程と、
を含む、ケイ素含有絶縁膜の形成方法。 - 酸素が存在する雰囲気下において下記一般式(3)で表される化合物1と下記一般式(4)で表される化合物2とを反応させる工程を含む、上記一般式(1)で表される有機ケイ素化合物の製造方法。
(式中、R12〜R14は、同一または異なり、水素原子、炭素数1〜4のアルキル基、ビニル基、フェニル基、ハロゲン原子、ヒドロキシ基、アセトキシ基、フェノキシ基、またはアルコキシ基を示し、Xはハロゲン原子を示し、aは0〜2の整数を示す。)
(式中、R15〜R17は、同一または異なり、R15〜R17の少なくとも一つが水素原子、炭素数1〜4のアルキル基、ビニル基、またはフェニル基、ハロゲン原子、ヒドロキシ基、アセトキシ基、フェノキシ基、またはアルコキシ基を示し、かつR15〜R17の少なくとも一つがハロゲン原子、ヒドロキシ基、アセトキシ基、フェノキシ基、またはアルコキシ基を示し、Yはハロゲン原子、水素原子、またはアルコキシ基を示す。)
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CN101611043A (zh) | 2009-12-23 |
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