JPWO2008066067A1 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
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- JPWO2008066067A1 JPWO2008066067A1 JP2008547006A JP2008547006A JPWO2008066067A1 JP WO2008066067 A1 JPWO2008066067 A1 JP WO2008066067A1 JP 2008547006 A JP2008547006 A JP 2008547006A JP 2008547006 A JP2008547006 A JP 2008547006A JP WO2008066067 A1 JPWO2008066067 A1 JP WO2008066067A1
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 150
- 238000007599 discharging Methods 0.000 claims abstract description 85
- 238000003384 imaging method Methods 0.000 claims abstract description 53
- 229920006395 saturated elastomer Polymers 0.000 claims description 65
- 238000005036 potential barrier Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 5
- 238000010408 sweeping Methods 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
- H01L27/14656—Overflow drain structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
2 光電変換部
3 抵抗性電極部
4 読出ゲート部
6 転送部
7 不要電荷排出ドレイン部
8 不要電荷排出ゲート部
9 アイソレーション部
23 飽和電荷排出ドレイン部
24 飽和電荷排出ゲート部
Claims (7)
- 所定の方向に配列され、前記所定の方向と交差する方向において一方の側に向かってポテンシャルが高くされる複数の光電変換部と、
前記所定の方向と交差する方向において前記光電変換部の一方の側に設けられ、前記光電変換部で発生した電荷を取得して前記所定の方向に転送する転送部と、
前記所定の方向と交差する方向に沿って前記光電変換部と隣接するように設けられ、前記光電変換部で発生した不要電荷を前記光電変換部から排出する不要電荷排出ドレイン部と、
前記光電変換部と前記不要電荷排出ドレイン部との間に設けられ、前記光電変換部から前記不要電荷排出ドレイン部への不要電荷の流れの遮断及び開放を選択的に行う不要電荷排出ゲート部と、
を備えることを特徴とする固体撮像素子。 - 前記所定の方向と交差する方向において前記光電変換部の他方の側に設けられ、前記光電変換部で発生した飽和電荷を前記光電変換部から排出する飽和電荷排出ドレイン部と、
前記光電変換部と前記飽和電荷排出ドレイン部との間に設けられ、前記光電変換部から前記飽和電荷排出ドレイン部への飽和電荷の流れの遮断及び開放を選択的に行う飽和電荷排出ゲート部と、
を備えることを特徴とする請求項1記載の固体撮像素子。 - 前記光電変換部の最も低いポテンシャルの高さと、前記不要電荷排出ゲート部のポテンシャル障壁の高さとが略同一であることを特徴とする請求項2記載の固体撮像素子。
- 不要電荷排出ドレイン部は、隣り合う前記光電変換部の間の領域に2領域置きに設けられていることを特徴とする請求項1記載の固体撮像素子。
- 隣り合う前記光電変換部の間の領域のうち、不要電荷排出ドレイン部が設けられていない領域には、アイソレーション部が設けられていることを特徴とする請求項4記載の固体撮像素子。
- 前記転送部は、所定の数の光電変換部に対応して一つずつ設けられることで全体では複数設けられ、前記不要電荷排出ドレイン部と電気的に接続されるドレイン端子と、前記不要電荷排出ゲート部と電気的に接続されるゲート端子とが、前記転送部毎に設けられていることを特徴とする請求項1記載の固体撮像素子。
- 前記所定の方向と交差する方向において前記光電変換部の他方の側に設けられ、前記光電変換部で発生した飽和電荷を前記光電変換部から排出する飽和電荷排出ドレイン部と、
前記光電変換部と前記飽和電荷排出ドレイン部との間に設けられ、前記光電変換部から前記飽和電荷排出ドレイン部へ飽和電荷を流す飽和電荷排出部と、
を備えることを特徴とする請求項1記載の固体撮像素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008547006A JP5350803B2 (ja) | 2006-11-28 | 2007-11-28 | 固体撮像素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006320554 | 2006-11-28 | ||
JP2006320554 | 2006-11-28 | ||
PCT/JP2007/072931 WO2008066067A1 (fr) | 2006-11-28 | 2007-11-28 | Élément d'imagerie à l'état solide |
JP2008547006A JP5350803B2 (ja) | 2006-11-28 | 2007-11-28 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2008066067A1 true JPWO2008066067A1 (ja) | 2010-03-04 |
JP5350803B2 JP5350803B2 (ja) | 2013-11-27 |
Family
ID=39467857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008547006A Active JP5350803B2 (ja) | 2006-11-28 | 2007-11-28 | 固体撮像素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8334918B2 (ja) |
EP (1) | EP2093801B1 (ja) |
JP (1) | JP5350803B2 (ja) |
CN (1) | CN101542734B (ja) |
WO (1) | WO2008066067A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123707A (ja) * | 2008-11-19 | 2010-06-03 | Sony Corp | 固体撮像装置およびその読み出し方法 |
JP5302073B2 (ja) * | 2009-04-01 | 2013-10-02 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5485919B2 (ja) * | 2011-01-14 | 2014-05-07 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5452511B2 (ja) * | 2011-01-14 | 2014-03-26 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP5680979B2 (ja) | 2011-01-20 | 2015-03-04 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP6211898B2 (ja) * | 2013-11-05 | 2017-10-11 | 浜松ホトニクス株式会社 | リニアイメージセンサ |
JP6348272B2 (ja) * | 2013-11-05 | 2018-06-27 | 浜松ホトニクス株式会社 | 電荷結合素子及びその製造方法、並びに固体撮像装置 |
JP6739891B2 (ja) * | 2014-09-01 | 2020-08-12 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US11185919B2 (en) | 2018-01-12 | 2021-11-30 | Hammond Group, Inc. | Methods and systems for forming mixtures of lead oxide and lead metal particles |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5424530A (en) * | 1977-07-26 | 1979-02-23 | Matsushita Electronics Corp | Solidstate pick up unit |
EP0059547B1 (en) | 1981-03-02 | 1985-10-02 | Texas Instruments Incorporated | Clock controlled anti-blooming for virtual phase ccd's |
JPS6039257A (ja) | 1983-08-11 | 1985-03-01 | Toshimasa Niijima | プログラムファイル構成方法 |
JPS6039257U (ja) * | 1983-08-25 | 1985-03-19 | ソニー株式会社 | 固体センサ |
JPS6437177A (en) | 1987-08-03 | 1989-02-07 | Canon Kk | Image pickup device |
JP3297947B2 (ja) | 1993-03-24 | 2002-07-02 | ソニー株式会社 | 固体撮像素子 |
JPH07130977A (ja) * | 1993-11-08 | 1995-05-19 | Nikon Corp | 固体撮像装置 |
JP3318814B2 (ja) | 1995-03-15 | 2002-08-26 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
JP2871640B2 (ja) * | 1996-12-18 | 1999-03-17 | 日本電気株式会社 | 固体撮像素子の駆動方法 |
JP2937192B1 (ja) * | 1998-06-19 | 1999-08-23 | 富士電機株式会社 | Ccdイメージセンサ |
JP2000058810A (ja) * | 1998-08-12 | 2000-02-25 | Sony Corp | 固体撮像装置 |
JP4338298B2 (ja) * | 2000-10-04 | 2009-10-07 | 富士フイルム株式会社 | 電荷転送装置およびその駆動方法 |
JP4515617B2 (ja) * | 2000-10-23 | 2010-08-04 | 富士フイルム株式会社 | 固体撮像素子およびその駆動方法 |
JP2002135660A (ja) | 2000-10-25 | 2002-05-10 | Sony Corp | 固体撮像素子及びその電荷蓄積時間制御方法 |
JP2002231926A (ja) | 2001-02-01 | 2002-08-16 | Fuji Photo Film Co Ltd | ラインセンサおよびそれを用いた放射線画像情報読取装置 |
JP2004165479A (ja) * | 2002-11-14 | 2004-06-10 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
JP2005268564A (ja) | 2004-03-19 | 2005-09-29 | Ricoh Co Ltd | 固体撮像素子及び固体撮像素子の製造方法 |
EP1583150A1 (en) * | 2004-03-31 | 2005-10-05 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Image sensor with large-area, high-sensitivity and high-speed pixels |
-
2007
- 2007-11-28 EP EP07832653.5A patent/EP2093801B1/en active Active
- 2007-11-28 JP JP2008547006A patent/JP5350803B2/ja active Active
- 2007-11-28 CN CN2007800443879A patent/CN101542734B/zh active Active
- 2007-11-28 WO PCT/JP2007/072931 patent/WO2008066067A1/ja active Application Filing
- 2007-11-28 US US12/516,411 patent/US8334918B2/en active Active
Also Published As
Publication number | Publication date |
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EP2093801A1 (en) | 2009-08-26 |
EP2093801A4 (en) | 2011-11-30 |
US20100045841A1 (en) | 2010-02-25 |
CN101542734A (zh) | 2009-09-23 |
EP2093801B1 (en) | 2016-11-16 |
CN101542734B (zh) | 2011-07-06 |
WO2008066067A1 (fr) | 2008-06-05 |
US8334918B2 (en) | 2012-12-18 |
JP5350803B2 (ja) | 2013-11-27 |
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