JPWO2006100768A1 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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Abstract
Description
先ず、本発明の第1の実施形態について説明する。図1は、本発明の第1の実施形態に係る半導体装置を示す断面図である。
次に、本発明の第2の実施形態について説明する。図2は、本発明の第2の実施形態に係る半導体装置を示す断面図である。
次に、本発明の第3の実施形態について説明する。図3は、本発明の第3の実施形態に係る半導体装置を示す断面図である。
次に、本発明の第4の実施形態について説明する。図4は、本発明の第4の実施形態に係る半導体装置を示す断面図である。
次に、本発明の第5の実施形態について説明する。図5は、本発明の第5の実施形態に係る半導体装置を示す断面図である。
Pitch Ball Grid Array)、図13A〜図13Bに示す横置き型のプレーンMCP、図14に示す3次元パッケージモジュール等に本発明を適用してもよい。また、図15に示すDIP(Dual Inline Package)、SKINNY DIP(Skinny Dual
Inline Package)、SHRINK DIP(Shrink Dual Inline Package)、ZIP(Zigzag Inline Package)、PGA(Pin Grid Array)、SOP(Small Outline L-Leaded Package)、SOJ(Small
Outline J-Leaded Package)、SSOP(Shrink Small Outline L-Leaded
Package)、TSOP(Thin Small Outline L-Leaded Package)、QFJ(Quad Flat J-Leaded Package)、QFP(Quad Flat
L-Leaded Package)、TQFP/LQFP(Thin Quad Flat L-Leaded
Package / Low Profile Quad Flat L-Leaded Package)、BGA/LGA(Ball Grid Array / Fine Pitch Land Grid Array)、TCP(Tape Carrier Package)、CSP(Wafer Level Chip
Size Package)等に本発明を適用してもよい。
Claims (20)
- 集積回路チップと、
前記集積回路チップを封止する封止樹脂と、
前記封止樹脂の表面の少なくとも一部を覆い、前記封止樹脂中への水分の侵入を防止する絶縁耐水膜と、
を有することを特徴とする半導体装置。 - 前記絶縁耐水膜として、金属酸化物膜及び金属窒化物膜からなる群から選択された少なくとも1種の膜が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁耐水膜として、撥水性樹脂膜が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記撥水性樹脂膜として、フッ素系樹脂膜及びシリコーン系樹脂膜からなる群から選択された少なくとも1種の膜が形成されていることを特徴とする請求項3に記載の半導体装置。
- 前記集積回路チップは、強誘電体メモリを含むことを特徴とする請求項1に記載の半導体装置。
- 前記絶縁耐水膜は、前記封止樹脂の全面を覆っていることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁耐水膜として、金属酸化物膜及び金属窒化物膜からなる群から選択された少なくとも1種の膜と、撥水性樹脂膜と、が積層して形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記集積回路チップから前記封止樹脂の外部まで延出するリードと、
前記リードと前記封止樹脂との界面からの前記封止樹脂中への水分の侵入を防止する第2の絶縁耐水膜と、
を有することを特徴とする請求項1に記載の半導体装置。 - 前記絶縁耐水膜と前記第2の絶縁耐水膜とは、互いに同一の材料から構成されていることを特徴とする請求項8に記載の半導体装置。
- パッケージ構造がTSOP型となっており、
前記封止樹脂は、80体積%以上のフィラーを含有することを特徴とする請求項5に記載の半導体装置。 - パッケージ構造がSOP型となっており、
前記封止樹脂は、90体積%以上のフィラーを含有することを特徴とする請求項5に記載の半導体装置。 - 前記封止樹脂は、球状フィラーを含有することを特徴とする請求項1に記載の半導体装置。
- 前記封止樹脂への紫外線の入射を遮断する紫外線遮断膜を有することを特徴とする請求項1に記載の半導体装置。
- 集積回路チップと、
前記集積回路チップを封止する封止樹脂と、
前記集積回路チップから前記封止樹脂の外部まで延出するリードと、
前記リードと前記封止樹脂との界面からの前記封止樹脂中への水分の侵入を防止する絶縁耐水膜と、
を有することを特徴とする半導体装置。 - リードフレームのダイパッド上に集積回路チップを固定する工程と、
前記集積回路チップを封止樹脂により封止する工程と、
前記封止樹脂の表面の少なくとも一部を覆い、前記封止樹脂中への水分の侵入を防止する絶縁耐水膜を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記絶縁耐水膜として、金属酸化物膜及び金属窒化物膜からなる群から選択された少なくとも1種の膜を形成することを特徴とする請求項15に記載の半導体装置の製造方法。
- 前記集積回路チップとして、強誘電体メモリを含むものを用いることを特徴とする請求項15に記載の半導体装置の製造方法。
- 前記集積回路チップを固定する工程と前記封止樹脂により封止する工程との間に、240℃以下でボンディングワイヤのボンディングを行う工程を有することを特徴とする請求項17に記載の半導体装置の製造方法。
- 前記絶縁耐水膜の成膜温度を240℃以下とすることを特徴とする請求項17に記載の半導体装置の製造方法。
- 前記封止樹脂により封止する工程は、前記封止樹脂をキュアする工程を有し、
前記絶縁耐水膜を形成する工程を前記封止樹脂をキュアする工程が終了してから4時間以内に開始することを特徴とする請求項15に記載の半導体装置の製造方法。
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JP (1) | JPWO2006100768A1 (ja) |
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JP5541618B2 (ja) * | 2009-09-01 | 2014-07-09 | 新光電気工業株式会社 | 半導体パッケージの製造方法 |
JP5693515B2 (ja) | 2012-01-10 | 2015-04-01 | エイチズィーオー・インコーポレーテッド | 内部耐水性被覆を備える電子デバイス |
JP5924110B2 (ja) * | 2012-05-11 | 2016-05-25 | 株式会社ソシオネクスト | 半導体装置、半導体装置モジュールおよび半導体装置の製造方法 |
JP2015142109A (ja) * | 2014-01-30 | 2015-08-03 | アイシン精機株式会社 | 液体材料検査用センサモジュールとその製造方法 |
CN105849899B (zh) * | 2014-02-25 | 2019-03-12 | 日立汽车系统株式会社 | 防水型电子设备以及其制造方法 |
JP2016001702A (ja) * | 2014-06-12 | 2016-01-07 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
WO2016067930A1 (ja) * | 2014-10-29 | 2016-05-06 | 日立オートモティブシステムズ株式会社 | 電子機器及び電子機器の製造方法 |
US9793106B2 (en) * | 2014-11-06 | 2017-10-17 | Texas Instruments Incorporated | Reliability improvement of polymer-based capacitors by moisture barrier |
DE102015102535B4 (de) | 2015-02-23 | 2023-08-03 | Infineon Technologies Ag | Verbundsystem und Verfahren zum haftenden Verbinden eines hygroskopischen Materials |
DE102015223439A1 (de) * | 2015-11-26 | 2017-06-01 | Robert Bosch Gmbh | Verfahren zur Herstellung einer elektrischen Vorrichtung mit einer Umhüllmasse |
JP2020053611A (ja) * | 2018-09-28 | 2020-04-02 | 三菱電機株式会社 | 半導体モジュール、および、半導体モジュールの製造方法 |
US11552006B2 (en) * | 2020-07-22 | 2023-01-10 | Texas Instruments Incorporated | Coated semiconductor devices |
US20230378010A1 (en) * | 2022-05-18 | 2023-11-23 | Wolfspeed, Inc. | Power semiconductor devices having moisture barriers |
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US20100203682A1 (en) | 2010-08-12 |
US20080017999A1 (en) | 2008-01-24 |
KR101007900B1 (ko) | 2011-01-14 |
KR20070100805A (ko) | 2007-10-11 |
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