JPWO2006043530A1 - 基板加熱処理装置及び基板加熱処理に用いられる基板搬送用トレイ - Google Patents
基板加熱処理装置及び基板加熱処理に用いられる基板搬送用トレイ Download PDFInfo
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- JPWO2006043530A1 JPWO2006043530A1 JP2006542991A JP2006542991A JPWO2006043530A1 JP WO2006043530 A1 JPWO2006043530 A1 JP WO2006043530A1 JP 2006542991 A JP2006542991 A JP 2006542991A JP 2006542991 A JP2006542991 A JP 2006542991A JP WO2006043530 A1 JPWO2006043530 A1 JP WO2006043530A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 343
- 238000010438 heat treatment Methods 0.000 title claims abstract description 233
- 239000002296 pyrolytic carbon Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 abstract description 20
- 239000011247 coating layer Substances 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (10)
- 真空排気可能な処理室内に配置された基板を加熱処理する加熱手段を備え、前記処理室中に配置されている基板を前記加熱手段によって加熱処理する基板加熱処理装置であって、前記加熱手段と基板との間にサセプタが配備されており、当該サセプタの前記基板が配置されている側の表面が前記基板加熱処理の間にガスを放出しない部材によって被覆されていることを特徴とする基板加熱処理装置。
- 前記基板を間に挟んで、前記サセプタに対向する側に前記サセプタを介した前記加熱手段からの熱を受ける熱受け体が配備されており、当該熱受け体の前記基板が配置されている側の表面が前記基板加熱処理の間にガスを放出しない部材で被覆されていることを特徴とする請求項1記載の基板加熱処理装置。
- サセプタは加熱手段を内蔵していて当該サセプタの上方に基板を配置可能なものであることを特徴とする請求項1又は2記載の基板加熱処理装置。
- 熱受け体はサセプタの上方から前記基板を覆い、前記基板を前記処理室内の空間と隔離するキャップからなり、当該キャップの少なくとも前記基板の側に向かう側の表面は前記基板加熱処理の間にガスを放出しない部材で被覆されていることを特徴とする請求項3記載の基板加熱処理装置。
- 加熱される基板がSiC基板であることを特徴とする請求項1乃至4のいずれか一項記載の基板加熱処理装置。
- 加熱手段が電子衝撃加熱用の熱電子発生手段または赤外線ランプ加熱用の赤外線ランプであることを特徴とする請求項1乃至5のいずれか一項記載の基板加熱処理装置。
- 基板加熱処理の間にガスを放出しない部材が熱分解炭素であることを特徴とする請求項1乃至6のいずれか一項記載の基板加熱処理装置。
- 請求項3記載の基板加熱処理装置における加熱手段を内蔵するサセプタの上に配置可能で、前記加熱手段によって加熱処理される基板が上側面に配置される基板支持部を有し、外周が当該サセプタの外周より大きく、少なくとも前記上側面が前記基板加熱処理の間にガスを放出しない部材で被覆されていることを特徴とする基板加熱処理に用いられる基板搬送用トレイ。
- トレイは前記基板支持部の周縁から前記サセプタの外側を下側方向に向かって延びる筒状の側壁部と、当該筒状側壁部の下端側から径方向外側に向かって延びる環状部とを備えていることを特徴とする請求項8記載の基板加熱処理に用いられる基板搬送用トレイ。
- 基板加熱処理の間にガスを放出しない部材が熱分解炭素であることを特徴とする請求項8又は9記載の基板加熱処理に用いられる基板搬送用トレイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004303873 | 2004-10-19 | ||
JP2004303873 | 2004-10-19 | ||
PCT/JP2005/019090 WO2006043530A1 (ja) | 2004-10-19 | 2005-10-18 | 基板加熱処理装置及び基板加熱処理に用いられる基板搬送用トレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006043530A1 true JPWO2006043530A1 (ja) | 2008-05-22 |
JP4599363B2 JP4599363B2 (ja) | 2010-12-15 |
Family
ID=36202945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542991A Active JP4599363B2 (ja) | 2004-10-19 | 2005-10-18 | 基板加熱処理装置及び基板加熱処理に用いられる基板搬送用トレイ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7732739B2 (ja) |
EP (1) | EP1804284B1 (ja) |
JP (1) | JP4599363B2 (ja) |
KR (1) | KR101049730B1 (ja) |
CN (1) | CN101036220B (ja) |
WO (1) | WO2006043530A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204147A (ja) * | 2011-03-25 | 2012-10-22 | Core Technology Inc | プレート型ヒーター |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006050360B4 (de) | 2006-10-25 | 2014-05-15 | Infineon Technologies Austria Ag | Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC |
JP2008166729A (ja) | 2006-12-08 | 2008-07-17 | Canon Anelva Corp | 基板加熱処理装置及び半導体製造方法 |
JPWO2008123111A1 (ja) * | 2007-03-20 | 2010-07-15 | キヤノンアネルバ株式会社 | 基板加熱処理装置及び基板加熱処理方法 |
US20100025695A1 (en) | 2007-04-20 | 2010-02-04 | Canon Anelva Corporation | Annealing method for semiconductor device with silicon carbide substrate and semiconductor device |
JP4436893B2 (ja) | 2007-05-16 | 2010-03-24 | キヤノンアネルバ株式会社 | 加熱処理装置 |
US7666763B2 (en) | 2007-05-29 | 2010-02-23 | Canon Anelva Corporation | Nanosilicon semiconductor substrate manufacturing method and semiconductor circuit device using nanosilicon semiconductor substrate manufactured by the method |
JP4617364B2 (ja) * | 2008-02-29 | 2011-01-26 | キヤノンアネルバ株式会社 | 基板加熱装置及び処理方法 |
JP2009231341A (ja) * | 2008-03-19 | 2009-10-08 | Ulvac Japan Ltd | アニール装置、SiC半導体基板の熱処理方法 |
CN102473641B (zh) * | 2009-08-04 | 2015-04-22 | 佳能安内华股份有限公司 | 热处理设备以及半导体装置制造方法 |
US8328945B2 (en) * | 2010-03-12 | 2012-12-11 | United Technologies Corporation | Coating apparatus and method with indirect thermal stabilization |
ITCO20130041A1 (it) * | 2013-09-27 | 2015-03-28 | Lpe Spa | Suscettore con elemento di supporto |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
JP6541374B2 (ja) * | 2014-07-24 | 2019-07-10 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2019062139A (ja) * | 2017-09-28 | 2019-04-18 | 豊田合成株式会社 | 半導体装置の製造方法 |
Citations (5)
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JPH01145312A (ja) * | 1987-11-30 | 1989-06-07 | Toshiro Yamashina | アウトガスの少ない炭素材料の製造方法及びその製法で得られた炭素材料を使用した炭素構造材料 |
JPH0651274U (ja) * | 1992-12-15 | 1994-07-12 | 日新電機株式会社 | 気相成長装置のトレイ |
JPH07335583A (ja) * | 1994-06-10 | 1995-12-22 | Shinetsu Quartz Prod Co Ltd | ウェーハ熱処理用反応容器及びその製法 |
JPH08213337A (ja) * | 1994-11-30 | 1996-08-20 | New Japan Radio Co Ltd | 半導体基板の熱処理方法 |
WO2004088734A1 (ja) * | 2003-03-10 | 2004-10-14 | Kwansei Gakuin Educational Foundation | 熱処理方法と熱処理装置 |
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-
2005
- 2005-10-18 US US11/660,042 patent/US7732739B2/en not_active Expired - Fee Related
- 2005-10-18 CN CN2005800337387A patent/CN101036220B/zh not_active Expired - Fee Related
- 2005-10-18 JP JP2006542991A patent/JP4599363B2/ja active Active
- 2005-10-18 EP EP05795511.4A patent/EP1804284B1/en not_active Not-in-force
- 2005-10-18 WO PCT/JP2005/019090 patent/WO2006043530A1/ja active Application Filing
- 2005-10-18 KR KR1020077005350A patent/KR101049730B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01145312A (ja) * | 1987-11-30 | 1989-06-07 | Toshiro Yamashina | アウトガスの少ない炭素材料の製造方法及びその製法で得られた炭素材料を使用した炭素構造材料 |
JPH0651274U (ja) * | 1992-12-15 | 1994-07-12 | 日新電機株式会社 | 気相成長装置のトレイ |
JPH07335583A (ja) * | 1994-06-10 | 1995-12-22 | Shinetsu Quartz Prod Co Ltd | ウェーハ熱処理用反応容器及びその製法 |
JPH08213337A (ja) * | 1994-11-30 | 1996-08-20 | New Japan Radio Co Ltd | 半導体基板の熱処理方法 |
WO2004088734A1 (ja) * | 2003-03-10 | 2004-10-14 | Kwansei Gakuin Educational Foundation | 熱処理方法と熱処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012204147A (ja) * | 2011-03-25 | 2012-10-22 | Core Technology Inc | プレート型ヒーター |
Also Published As
Publication number | Publication date |
---|---|
CN101036220A (zh) | 2007-09-12 |
KR20070062977A (ko) | 2007-06-18 |
JP4599363B2 (ja) | 2010-12-15 |
EP1804284A1 (en) | 2007-07-04 |
CN101036220B (zh) | 2011-09-07 |
EP1804284B1 (en) | 2016-05-11 |
EP1804284A4 (en) | 2008-03-05 |
US7732739B2 (en) | 2010-06-08 |
WO2006043530A1 (ja) | 2006-04-27 |
US20070194001A1 (en) | 2007-08-23 |
KR101049730B1 (ko) | 2011-07-19 |
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