JPS649900A - Jig for heat-treating semiconductor wafer - Google Patents

Jig for heat-treating semiconductor wafer

Info

Publication number
JPS649900A
JPS649900A JP16489587A JP16489587A JPS649900A JP S649900 A JPS649900 A JP S649900A JP 16489587 A JP16489587 A JP 16489587A JP 16489587 A JP16489587 A JP 16489587A JP S649900 A JPS649900 A JP S649900A
Authority
JP
Japan
Prior art keywords
substrate
jig
heat
semiconductor wafer
contents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16489587A
Other languages
Japanese (ja)
Other versions
JPH0471880B2 (en
Inventor
Seiji Minoura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ibiden Co Ltd
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Priority to JP16489587A priority Critical patent/JPS649900A/en
Publication of JPS649900A publication Critical patent/JPS649900A/en
Publication of JPH0471880B2 publication Critical patent/JPH0471880B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain the titled jig without occurrence of peeling or cracking in thermal cycling, by forming a pyrolytic carbon film on the surface of a specific carbonaceous substrate. CONSTITUTION:A carbonaceous material consisting of isotropic graphite material with <=300ppm ash content and respective <=50ppm contents of Fe, Ni, Co and V and respective <=20ppm contents of Na, Ca and Al in ash and 1.3-3.5 (10<-6>) average thermal expansion coefficient at 20-40 deg.C is heated at 800-2,800 deg.C and the surface of the substrate is brought into contact with a (halogenated) hydrocarbon to form a pyrolytic carbon film having 5-120mum thickness on the surface of the substrate.
JP16489587A 1987-06-30 1987-06-30 Jig for heat-treating semiconductor wafer Granted JPS649900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16489587A JPS649900A (en) 1987-06-30 1987-06-30 Jig for heat-treating semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16489587A JPS649900A (en) 1987-06-30 1987-06-30 Jig for heat-treating semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS649900A true JPS649900A (en) 1989-01-13
JPH0471880B2 JPH0471880B2 (en) 1992-11-16

Family

ID=15801908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16489587A Granted JPS649900A (en) 1987-06-30 1987-06-30 Jig for heat-treating semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS649900A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5277934A (en) * 1990-06-27 1994-01-11 Advanced Ceramico Corporation Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon
JP2005133133A (en) * 2003-10-29 2005-05-26 Toyobo Co Ltd Deposition-preventive plate for vacuum thin film deposition apparatus
EP1804284A1 (en) * 2004-10-19 2007-07-04 Canon Anelva Corporation Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
JP2013028494A (en) * 2011-07-28 2013-02-07 Sumitomo Electric Ind Ltd Graphite and method for producing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103087A (en) * 1983-11-08 1985-06-07 日立化成工業株式会社 Graphite member for heating
JPS6374995A (en) * 1986-09-19 1988-04-05 Toyo Tanso Kk Graphite material for epitaxy

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103087A (en) * 1983-11-08 1985-06-07 日立化成工業株式会社 Graphite member for heating
JPS6374995A (en) * 1986-09-19 1988-04-05 Toyo Tanso Kk Graphite material for epitaxy

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5277934A (en) * 1990-06-27 1994-01-11 Advanced Ceramico Corporation Method for protecting a graphite chuck for a starter filament in the manufacture of polycrystalline silicon
JP2005133133A (en) * 2003-10-29 2005-05-26 Toyobo Co Ltd Deposition-preventive plate for vacuum thin film deposition apparatus
EP1804284A1 (en) * 2004-10-19 2007-07-04 Canon Anelva Corporation Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
EP1804284A4 (en) * 2004-10-19 2008-03-05 Canon Anelva Corp Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
JP2013028494A (en) * 2011-07-28 2013-02-07 Sumitomo Electric Ind Ltd Graphite and method for producing the same

Also Published As

Publication number Publication date
JPH0471880B2 (en) 1992-11-16

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