JPWO2005119789A1 - 電子デバイス製造方法及び電子デバイス - Google Patents
電子デバイス製造方法及び電子デバイス Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000000463 material Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 20
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 abstract description 24
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 17
- 238000006552 photochemical reaction Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 28
- 239000010409 thin film Substances 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 16
- 125000000524 functional group Chemical group 0.000 description 14
- 230000005684 electric field Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 239000010419 fine particle Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- -1 silane compound Chemical class 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 101000629575 Homo sapiens Spermatogenesis-associated protein 32 Proteins 0.000 description 2
- 101000892256 Mesobuthus martensii Neurotoxin BmKAEP2 Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 102100026838 Spermatogenesis-associated protein 32 Human genes 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 101150059215 AEP1 gene Proteins 0.000 description 1
- 101150053716 AEP3 gene Proteins 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 101150082311 Spata31 gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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Abstract
Description
100nm程度以下の微細パターンの形成も可能である。これにより2〜3GHz の動作周波数を有する半導体集積回路も製造されている。
インターネット公知文献 http://www.nanosysinc.com/technology.html
図7(A)は、図6に示した被加工基板20上の領域AEP2近傍の拡大図であり、図6に対し90度回転した配置を示す。以下の、図7(B)〜図7(F)は、電子デバイス製造のプロセスステップを示す。
Claims (24)
- 電子デバイスの製造方法であって、
被加工基板に、所定の電極が少なくとも一つ形成されたマスクを近接させる工程と;
前記被加工基板と前記マスクとの間に、微粒状の能動素子部材を含む誘電性の液体を充填する工程と;
前記所定の電極に所定の電圧を印加する工程と;
前記液体中の前記能動素子部材を前記被加工基板に個設する工程とを含むことを特徴とする電子デバイス製造方法。 - 前記能動素子部材は、微粒棒状の能動素子材料であることを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記能動素子部材は、前記微粒棒状の能動素子材料を包囲する絶縁材料をさらに含むことを特徴とする請求項2に記載の電子デバイス製造方法。
- 前記能動素子材料は、カーボンナノチューブであることを特徴とする請求項2に記載の電子デバイス製造方法。
- 前記能動素子材料は、微粒棒状の半導体であることを特徴とする請求項2に記載の電子デバイス製造方法。
- 前記能動素子部材は、その外周に光反応性物質を有することを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記光反応性物質は、カルボキシル基、スルホ基、水酸基及びフッ素からなる群から選ばれた少なくとも一種を含むこと特徴とする請求項6に記載の電子デバイス製造方法。
- 前記被加工基板は、その表面に光反応性物質を有することを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記光反応性物質はカルボキシル基、スルホ基、水酸基及びフッ素からなる群から選ばれた少なくとも一種を含むこと特徴とする請求項8に記載の電子デバイス製造方法。
- 前記液体中の前記能動素子部材を前記被加工基板に個設する工程は、誘電性の液体及び記前被加工基板への光の照射を含むことを特徴とする請求項6に記載の電子デバイス製造方法。
- 前記マスク上の前記電極は、前記能動素子部材を前記被加工基板へ個設する工程において使用する光に対して透明な電極であることを特徴とする請求項10に記載の電子デバイス製造方法。
- 前記透明な電極は、金属酸化物または金属窒化物よりなることを特徴とする請求項11に記載の電子デバイス製造方法。
- 前記透明な電極は、ダイヤモンド膜よりなることを特徴とする請求項11に記載の電子デバイス製造方法。
- 前記マスク上の前記電極は、正電位を印加する正電極と負電位を印加する負電極とが隣接配置された複合電極であることを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記複合電極に印加する電位が交流電位であることを特徴とする請求項14に記載の電子デバイス製造方法。
- 前記複合電極は、第1の電位を印加するための一方向に伸びる第1電極と、前記第1電極の両側に前記第1電極と平行に配置され、第1の電位と逆性の第2の電位を印加するための第2電極とからなることを特徴とする請求項14に記載の電子デバイス製造方法。
- 前記複合電極に印加する電位が交流電位であることを特徴とする請求項16に記載の電子デバイス製造方法。
- 前記誘電性の液体は、水を主成分として有することを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記誘電性の液体は、有機溶媒を主成分として有することを特徴とする請求項1に記載の電子デバイス製造方法。
- 前記能動素子部材をトランジスタとする工程を、さらに含むことを特徴とする請求項1から19のいずれか一項に記載の電子デバイス製造方法。
- 請求項1から19のいずれか1項に記載の電子デバイス製造方法により製造されることを特徴とする電子デバイス。
- 請求項20に記載の電子デバイス製造方法により製造されることを特徴とする電子デバイス。
- 前記電子デバイスは、メモリーデバイスであることを特徴とする請求項1から19のいずれか一項に記載の電子デバイス製造方法。
- 前記電子デバイスは、表示デバイスであることを特徴とする請求項1から19のいずれか一項に記載の電子デバイス製造方法。
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JP2006514094A JP5250974B2 (ja) | 2004-06-01 | 2005-05-31 | 電子デバイス製造方法 |
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JP2004163787 | 2004-06-01 | ||
JP2004163787 | 2004-06-01 | ||
PCT/JP2005/009925 WO2005119789A1 (ja) | 2004-06-01 | 2005-05-31 | 電子デバイス製造方法及び電子デバイス |
JP2006514094A JP5250974B2 (ja) | 2004-06-01 | 2005-05-31 | 電子デバイス製造方法 |
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JP5250974B2 JP5250974B2 (ja) | 2013-07-31 |
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US (1) | US7700459B2 (ja) |
EP (2) | EP1883101B1 (ja) |
JP (1) | JP5250974B2 (ja) |
KR (1) | KR100796835B1 (ja) |
TW (1) | TWI380342B (ja) |
WO (1) | WO2005119789A1 (ja) |
Families Citing this family (9)
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JP2008091566A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 絶縁膜で被覆されたカーボンナノチューブ構造体の製造方法及びその構造体からなる電界効果トランジスタ装置 |
WO2009101944A1 (ja) * | 2008-02-14 | 2009-08-20 | Sharp Kabushiki Kaisha | 半導体素子及び微細構造体配置基板の製造方法並びに表示素子 |
US20120135158A1 (en) | 2009-05-26 | 2012-05-31 | Sharp Kabushiki Kaisha | Methods and systems for electric field deposition of nanowires and other devices |
EP2668156B1 (en) | 2011-01-28 | 2018-10-31 | Basf Se | Polymerizable composition comprising an oxime sulfonate as thermal curing agent |
CA2841363A1 (en) | 2011-07-19 | 2013-01-24 | National Research Council Of Canada | Photobioreactor |
US8803129B2 (en) * | 2011-10-11 | 2014-08-12 | International Business Machines Corporation | Patterning contacts in carbon nanotube devices |
KR101339550B1 (ko) * | 2011-11-24 | 2013-12-10 | 삼성토탈 주식회사 | 올레핀 중합 및 공중합용 촉매 및 이를 사용하는 올레핀 중합 또는 공중합 방법 |
CN105810748B (zh) * | 2014-12-31 | 2018-12-21 | 清华大学 | N型薄膜晶体管 |
CN106655874B (zh) * | 2016-09-08 | 2019-06-28 | 北京纳米能源与系统研究所 | 一种可变形柔性纳米发电机、制备方法及制成的传感器 |
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EP1314189B1 (en) * | 2000-08-22 | 2013-02-27 | President and Fellows of Harvard College | Electrical device comprising doped semiconductor nanowires and method for its production |
US6911767B2 (en) * | 2001-06-14 | 2005-06-28 | Hyperion Catalysis International, Inc. | Field emission devices using ion bombarded carbon nanotubes |
KR100480179B1 (ko) | 2001-10-19 | 2005-04-06 | 엘지전자 주식회사 | 탄소 나노튜브 전계방출소자 및 그 제조방법 |
US6902658B2 (en) * | 2001-12-18 | 2005-06-07 | Motorola, Inc. | FED cathode structure using electrophoretic deposition and method of fabrication |
JP2003257304A (ja) * | 2002-02-28 | 2003-09-12 | Hitachi Chem Co Ltd | カーボンナノチューブの配列方法、カーボンナノチューブ集積体の製造方法及びカーボンナノチューブ集積体並びに電界電子放出素子 |
JP4051988B2 (ja) | 2002-04-09 | 2008-02-27 | 富士ゼロックス株式会社 | 光電変換素子および光電変換装置 |
AU2003243165A1 (en) * | 2002-04-26 | 2003-11-10 | The Penn State Research Foundation | Integrated nanomechanical sensor array chips |
JP2003332266A (ja) | 2002-05-13 | 2003-11-21 | Kansai Tlo Kk | ナノチューブの配線方法及びナノチューブ配線用制御回路 |
JP2004016858A (ja) * | 2002-06-13 | 2004-01-22 | Seiko Instruments Inc | 膜形成装置及び方法 |
JP4338948B2 (ja) * | 2002-08-01 | 2009-10-07 | 株式会社半導体エネルギー研究所 | カーボンナノチューブ半導体素子の作製方法 |
JP3880560B2 (ja) * | 2003-04-07 | 2007-02-14 | 三井化学株式会社 | カーボンナノチューブの配向方法および組成物 |
US6987302B1 (en) * | 2003-07-01 | 2006-01-17 | Yingjian Chen | Nanotube with at least a magnetic nanoparticle attached to the nanotube's exterior sidewall and electronic devices made thereof |
US6890780B2 (en) * | 2003-10-10 | 2005-05-10 | General Electric Company | Method for forming an electrostatically-doped carbon nanotube device |
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- 2005-05-31 JP JP2006514094A patent/JP5250974B2/ja not_active Expired - Fee Related
- 2005-05-31 US US11/628,053 patent/US7700459B2/en active Active
- 2005-05-31 WO PCT/JP2005/009925 patent/WO2005119789A1/ja not_active Application Discontinuation
- 2005-05-31 EP EP07119863.4A patent/EP1883101B1/en not_active Not-in-force
- 2005-05-31 TW TW094117774A patent/TWI380342B/zh not_active IP Right Cessation
- 2005-05-31 EP EP05745864A patent/EP1768188A1/en not_active Withdrawn
- 2005-05-31 KR KR1020067021630A patent/KR100796835B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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KR20070020011A (ko) | 2007-02-16 |
KR100796835B1 (ko) | 2008-01-22 |
JP5250974B2 (ja) | 2013-07-31 |
EP1883101A2 (en) | 2008-01-30 |
EP1768188A1 (en) | 2007-03-28 |
EP1883101A3 (en) | 2012-05-30 |
TW200540947A (en) | 2005-12-16 |
WO2005119789A1 (ja) | 2005-12-15 |
US7700459B2 (en) | 2010-04-20 |
TWI380342B (en) | 2012-12-21 |
EP1883101B1 (en) | 2014-12-31 |
US20080014675A1 (en) | 2008-01-17 |
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