JPWO2002023614A1 - ゲート絶縁体の成膜方法、ゲート絶縁体の成膜装置、クラスターツール - Google Patents

ゲート絶縁体の成膜方法、ゲート絶縁体の成膜装置、クラスターツール Download PDF

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JPWO2002023614A1
JPWO2002023614A1 JP2002527562A JP2002527562A JPWO2002023614A1 JP WO2002023614 A1 JPWO2002023614 A1 JP WO2002023614A1 JP 2002527562 A JP2002527562 A JP 2002527562A JP 2002527562 A JP2002527562 A JP 2002527562A JP WO2002023614 A1 JPWO2002023614 A1 JP WO2002023614A1
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processing chamber
housing wall
film
gas
gate insulator
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桐生　秀樹
高橋　毅
青山　真太郎
神力　博
井下田　真信
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Tokyo Electron Ltd
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    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
    • H—ELECTRICITY
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
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    • H—ELECTRICITY
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/0402—Apparatus for fluid treatment

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Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1326271A4 (en) * 2000-09-18 2005-08-24 Tokyo Electron Ltd METHOD FOR FILMING A GATE INSULATOR, DEVICE FOR FILMING A GATE INSULATOR AND A CLUSTER TOOL
KR100848423B1 (ko) * 2000-09-19 2008-07-28 맷슨 테크놀로지, 인크. 유전체 코팅 및 유전체 코팅을 형성하는 방법
JP3773448B2 (ja) * 2001-06-21 2006-05-10 松下電器産業株式会社 半導体装置
US6806145B2 (en) * 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
JP3941099B2 (ja) * 2001-12-19 2007-07-04 ソニー株式会社 薄膜形成方法
JP4361921B2 (ja) * 2002-03-26 2009-11-11 東京エレクトロン株式会社 基板処理装置
KR100451569B1 (ko) 2002-05-18 2004-10-08 주식회사 하이닉스반도체 수소배리어막을 구비한 반도체 장치의 제조 방법
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7122085B2 (en) * 2002-07-30 2006-10-17 Asm America, Inc. Sublimation bed employing carrier gas guidance structures
CN100389482C (zh) * 2002-11-11 2008-05-21 株式会社日立国际电气 基板处理装置
US7429540B2 (en) * 2003-03-07 2008-09-30 Applied Materials, Inc. Silicon oxynitride gate dielectric formation using multiple annealing steps
JP4140767B2 (ja) 2003-03-24 2008-08-27 株式会社堀場製作所 半導体装置における絶縁膜の形成方法
JP4140768B2 (ja) * 2003-04-24 2008-08-27 株式会社日立国際電気 半導体原料
JP3956225B2 (ja) * 2003-08-26 2007-08-08 株式会社トリケミカル研究所 膜形成方法
JP4887604B2 (ja) * 2003-08-29 2012-02-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6974779B2 (en) 2003-09-16 2005-12-13 Tokyo Electron Limited Interfacial oxidation process for high-k gate dielectric process integration
JP4059183B2 (ja) 2003-10-07 2008-03-12 ソニー株式会社 絶縁体薄膜の製造方法
KR100801770B1 (ko) * 2003-11-14 2008-02-05 동경 엘렉트론 주식회사 플라즈마 착화방법 및 기판 처리방법
US20050130448A1 (en) * 2003-12-15 2005-06-16 Applied Materials, Inc. Method of forming a silicon oxynitride layer
CN100485885C (zh) * 2003-12-18 2009-05-06 东京毅力科创株式会社 成膜方法
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
JP4718795B2 (ja) * 2004-06-02 2011-07-06 ルネサスエレクトロニクス株式会社 気相成長装置内の処理方法
JP4613587B2 (ja) * 2004-08-11 2011-01-19 株式会社明電舎 酸化膜形成方法とその装置
JP2006060170A (ja) * 2004-08-24 2006-03-02 Nec Electronics Corp キャパシタおよび半導体装置の製造方法
US8063452B2 (en) * 2004-08-30 2011-11-22 The University Of Tokyo Semiconductor device and method for manufacturing the same
US20060099827A1 (en) * 2004-11-05 2006-05-11 Yoo Woo S Photo-enhanced UV treatment of dielectric films
KR100667633B1 (ko) * 2004-12-20 2007-01-12 삼성전자주식회사 박막 제조 방법 및 이를 이용한 게이트 구조물,커패시터와 플래시 메모리 장치의 제조 방법
JP4694209B2 (ja) * 2005-01-05 2011-06-08 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR100841866B1 (ko) * 2005-02-17 2008-06-27 가부시키가이샤 히다치 고쿠사이 덴키 반도체 디바이스의 제조 방법 및 기판 처리 장치
US7849199B2 (en) * 2005-07-14 2010-12-07 Yahoo ! Inc. Content router
KR100780605B1 (ko) * 2005-11-03 2007-11-29 주식회사 하이닉스반도체 탄탈륨지르코늄산화막을 구비한 반도체소자 및 그의 제조방법
US7964514B2 (en) 2006-03-02 2011-06-21 Applied Materials, Inc. Multiple nitrogen plasma treatments for thin SiON dielectrics
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP5052071B2 (ja) * 2006-08-25 2012-10-17 株式会社明電舎 酸化膜形成方法とその装置
TWI435376B (zh) * 2006-09-26 2014-04-21 應用材料股份有限公司 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
JP5095230B2 (ja) * 2007-01-24 2012-12-12 東京エレクトロン株式会社 ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体
US7730516B2 (en) 2007-02-27 2010-06-01 Sony Corporation TV-centric system
JP4735601B2 (ja) * 2007-05-14 2011-07-27 ソニー株式会社 原子層蒸着法を用いた薄膜形成方法
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP2010027702A (ja) * 2008-07-16 2010-02-04 Hitachi Kokusai Electric Inc 基板処理装置及び薄膜生成方法
KR101003452B1 (ko) 2008-12-30 2010-12-28 한양대학교 산학협력단 멀티 비트 강유전체 메모리 소자 및 그 제조방법
JP5329265B2 (ja) * 2009-03-09 2013-10-30 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP2011023576A (ja) * 2009-07-16 2011-02-03 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
JP5011355B2 (ja) * 2009-07-30 2012-08-29 東京エレクトロン株式会社 成膜方法
JP5457287B2 (ja) * 2010-06-24 2014-04-02 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体デバイスの製造方法
JP5204809B2 (ja) * 2010-07-02 2013-06-05 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体デバイスの製造方法
US20130273262A1 (en) * 2012-04-13 2013-10-17 Applied Materials, Inc. Static deposition profile modulation for linear plasma source
JP6218062B2 (ja) * 2012-08-24 2017-10-25 学校法人早稲田大学 電力素子、電力制御機器、電力素子の製造方法
JP6199570B2 (ja) * 2013-02-07 2017-09-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9435031B2 (en) 2014-01-07 2016-09-06 International Business Machines Corporation Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same
CN105513960B (zh) * 2016-01-27 2019-01-11 武汉华星光电技术有限公司 氧化硅薄膜的沉积方法及低温多晶硅tft基板的制备方法
JP6778553B2 (ja) * 2016-08-31 2020-11-04 株式会社日本製鋼所 原子層成長装置および原子層成長方法
KR102799270B1 (ko) * 2017-01-05 2025-04-23 주성엔지니어링(주) 투습 방지막과 그 제조 방법
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
KR101992953B1 (ko) * 2018-10-12 2019-06-27 브이메모리 주식회사 전기장을 이용한 전류 경로 제어 방법 및 전자 소자

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3856483T2 (de) * 1987-03-18 2002-04-18 Kabushiki Kaisha Toshiba, Kawasaki Verfahren zur Herstellung von Dünnschichten
JP2789587B2 (ja) * 1988-01-08 1998-08-20 日本電気株式会社 絶縁薄膜の製造方法
JPH0661448A (ja) * 1991-01-23 1994-03-04 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JP2764472B2 (ja) * 1991-03-25 1998-06-11 東京エレクトロン株式会社 半導体の成膜方法
JP2643833B2 (ja) * 1994-05-30 1997-08-20 日本電気株式会社 半導体記憶装置及びその製造方法
TW295677B (https=) * 1994-08-19 1997-01-11 Tokyo Electron Co Ltd
JPH0982696A (ja) * 1995-09-18 1997-03-28 Toshiba Corp 半導体装置の製造方法および半導体製造装置
JP3402881B2 (ja) * 1995-11-24 2003-05-06 株式会社東芝 半導体装置の製造方法
JP3297857B2 (ja) * 1995-12-27 2002-07-02 東京エレクトロン株式会社 クラスタツール装置
JP3110316B2 (ja) * 1996-07-25 2000-11-20 日本電気株式会社 外部燃焼酸化装置
TW466615B (en) * 1996-12-23 2001-12-01 Lucent Technologies Inc A gate structure for integrated circuit fabrication
US6013553A (en) * 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6020024A (en) * 1997-08-04 2000-02-01 Motorola, Inc. Method for forming high dielectric constant metal oxides
US6727148B1 (en) * 1998-06-30 2004-04-27 Lam Research Corporation ULSI MOS with high dielectric constant gate insulator
KR100275738B1 (ko) * 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
KR100297719B1 (ko) * 1998-10-16 2001-08-07 윤종용 박막제조방법
US6623656B2 (en) * 1999-10-07 2003-09-23 Advanced Technology Materials, Inc. Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same
WO2001094662A1 (fr) * 2000-06-07 2001-12-13 Commissariat A L'energie Atomique Procede de preparation d'un revetement sur un substrat par le procede ald utilisant un reactant deutere
EP1326271A4 (en) * 2000-09-18 2005-08-24 Tokyo Electron Ltd METHOD FOR FILMING A GATE INSULATOR, DEVICE FOR FILMING A GATE INSULATOR AND A CLUSTER TOOL
KR100848423B1 (ko) * 2000-09-19 2008-07-28 맷슨 테크놀로지, 인크. 유전체 코팅 및 유전체 코팅을 형성하는 방법

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