JPS6459864A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS6459864A
JPS6459864A JP62216589A JP21658987A JPS6459864A JP S6459864 A JPS6459864 A JP S6459864A JP 62216589 A JP62216589 A JP 62216589A JP 21658987 A JP21658987 A JP 21658987A JP S6459864 A JPS6459864 A JP S6459864A
Authority
JP
Japan
Prior art keywords
gate
gate electrode
length
electrode
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62216589A
Other languages
English (en)
Other versions
JP2586508B2 (ja
Inventor
Takashi Noguchi
Hisao Hayashi
Michio Negishi
Takefumi Oshima
Yuji Hayashi
Toshiichi Maekawa
Takeshi Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62216589A priority Critical patent/JP2586508B2/ja
Publication of JPS6459864A publication Critical patent/JPS6459864A/ja
Application granted granted Critical
Publication of JP2586508B2 publication Critical patent/JP2586508B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
JP62216589A 1987-08-31 1987-08-31 Ｍｏｓトランジスタ Expired - Lifetime JP2586508B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62216589A JP2586508B2 (ja) 1987-08-31 1987-08-31 Ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62216589A JP2586508B2 (ja) 1987-08-31 1987-08-31 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS6459864A true JPS6459864A (en) 1989-03-07
JP2586508B2 JP2586508B2 (ja) 1997-03-05

Family

ID=16690788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62216589A Expired - Lifetime JP2586508B2 (ja) 1987-08-31 1987-08-31 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JP2586508B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316296B1 (en) 1999-05-28 2001-11-13 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Field-effect transistor and method of manufacturing same
JP2015041629A (ja) * 2013-08-20 2015-03-02 ソニー株式会社 放射線撮像装置および放射線撮像表示システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281558A (ja) * 1985-06-07 1986-12-11 Toshiba Corp Ｍｏｓ型半導体装置
JPS6230379A (ja) * 1985-07-31 1987-02-09 Seiko Epson Corp 薄膜トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61281558A (ja) * 1985-06-07 1986-12-11 Toshiba Corp Ｍｏｓ型半導体装置
JPS6230379A (ja) * 1985-07-31 1987-02-09 Seiko Epson Corp 薄膜トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6316296B1 (en) 1999-05-28 2001-11-13 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Field-effect transistor and method of manufacturing same
JP2015041629A (ja) * 2013-08-20 2015-03-02 ソニー株式会社 放射線撮像装置および放射線撮像表示システム

Also Published As

Publication number Publication date
JP2586508B2 (ja) 1997-03-05

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