JPS6444074A - Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery - Google Patents

Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery

Info

Publication number
JPS6444074A
JPS6444074A JP63190505A JP19050588A JPS6444074A JP S6444074 A JPS6444074 A JP S6444074A JP 63190505 A JP63190505 A JP 63190505A JP 19050588 A JP19050588 A JP 19050588A JP S6444074 A JPS6444074 A JP S6444074A
Authority
JP
Japan
Prior art keywords
layer
mis
solar cell
silicon substrate
solar battery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63190505A
Other languages
English (en)
Inventor
Hetsutsueru Rudorufu
Hofuman Binfuriito
Shiyumu Berutoruto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nukem GmbH
Original Assignee
Nukem GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nukem GmbH filed Critical Nukem GmbH
Publication of JPS6444074A publication Critical patent/JPS6444074A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/98—Utilizing process equivalents or options

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • Processing Of Solid Wastes (AREA)
JP63190505A 1987-07-30 1988-07-29 Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery Pending JPS6444074A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19873725346 DE3725346A1 (de) 1987-07-30 1987-07-30 Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle

Publications (1)

Publication Number Publication Date
JPS6444074A true JPS6444074A (en) 1989-02-16

Family

ID=6332753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63190505A Pending JPS6444074A (en) 1987-07-30 1988-07-29 Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery

Country Status (7)

Country Link
US (1) US4891325A (ja)
EP (1) EP0301471B1 (ja)
JP (1) JPS6444074A (ja)
DE (2) DE3725346A1 (ja)
ES (1) ES2032906T3 (ja)
IN (1) IN170013B (ja)
NO (1) NO174569C (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246617A (ja) * 2001-02-16 2002-08-30 Honda Motor Co Ltd 電界効果型の太陽電池
JP2005506705A (ja) * 2001-10-10 2005-03-03 メルク　パテント　ゲゼルシャフト　ミット　ベシュレンクテル　ハフトング エッチングおよびドーピング複合物質

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460287A1 (de) * 1990-05-31 1991-12-11 Siemens Aktiengesellschaft Neuartige Chalkopyrit-Solarzelle
DE69333722T2 (de) * 1993-05-31 2005-12-08 Stmicroelectronics S.R.L., Agrate Brianza Verfahren zur Verbesserung der Haftung zwischen Dielektrikschichten, an ihrer Grenzfläche, in der Herstellung von Halbleiterbauelementen
US5656554A (en) * 1994-07-29 1997-08-12 International Business Machines Corporation Semiconductor chip reclamation technique involving multiple planarization processes
DE19539699C2 (de) * 1995-10-25 1998-03-19 Siemens Solar Gmbh Verfahren zur Verwertung von defekten, laminierten Solarmodulen
US5923946A (en) * 1997-04-17 1999-07-13 Cree Research, Inc. Recovery of surface-ready silicon carbide substrates
US5920764A (en) * 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
US6037271A (en) * 1998-10-21 2000-03-14 Fsi International, Inc. Low haze wafer treatment process
EP1276701B1 (de) * 2000-04-28 2012-12-05 Merck Patent GmbH Ätzpasten für anorganische oberflächen
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
EP1949450B1 (en) * 2005-11-08 2015-01-21 LG Electronics Inc. Solar cell of high efficiency
DE102007030957A1 (de) * 2007-07-04 2009-01-08 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung
AU2008348838A1 (en) * 2008-01-23 2009-07-30 Solvay Fluor Gmbh Process for the manufacture of solar cells
US7749869B2 (en) * 2008-08-05 2010-07-06 International Business Machines Corporation Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites
CN102522458A (zh) * 2011-12-28 2012-06-27 浙江鸿禧光伏科技股份有限公司 一种单晶色斑片返工方法
CN102629644B (zh) * 2012-04-21 2014-11-19 湖南红太阳光电科技有限公司 一种成品晶硅太阳能电池片的返工工艺
US9466755B2 (en) * 2014-10-30 2016-10-11 International Business Machines Corporation MIS-IL silicon solar cell with passivation layer to induce surface inversion
CN106981547A (zh) * 2017-04-29 2017-07-25 无锡赛晶太阳能有限公司 一种处理单晶返工片的方法
CN110444616B (zh) * 2018-05-04 2022-12-09 南京航空航天大学 一种超薄晶硅太阳电池及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559281A (en) * 1968-11-27 1971-02-02 Motorola Inc Method of reclaiming processed semiconductior wafers
US4062102A (en) * 1975-12-31 1977-12-13 Silicon Material, Inc. Process for manufacturing a solar cell from a reject semiconductor wafer
US4013485A (en) * 1976-04-29 1977-03-22 International Business Machines Corporation Process for eliminating undesirable charge centers in MIS devices
US4253881A (en) * 1978-10-23 1981-03-03 Rudolf Hezel Solar cells composed of semiconductive materials
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
JPS5693375A (en) * 1979-12-26 1981-07-28 Shunpei Yamazaki Photoelectric conversion device
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
DE3135933A1 (de) * 1980-09-26 1982-05-19 Unisearch Ltd., Kensington, New South Wales Solarzelle und verfahren zu ihrer herstellung
DE3110931A1 (de) * 1981-03-20 1982-09-30 Standard Elektrik Lorenz Ag, 7000 Stuttgart Recyclingverfahren fuer mit cu(pfeil abwaerts)2(pfeil abwaerts)s beschichtete cds-schichten
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4404421A (en) * 1982-02-26 1983-09-13 Chevron Research Company Ternary III-V multicolor solar cells and process of fabrication
DE3234678A1 (de) * 1982-09-18 1984-04-05 Battelle-Institut E.V., 6000 Frankfurt Solarzelle
DE3420347A1 (de) * 1983-06-01 1984-12-06 Hitachi, Ltd., Tokio/Tokyo Gas und verfahren zum selektiven aetzen von siliciumnitrid
JPS6043871A (ja) * 1983-08-19 1985-03-08 Sanyo Electric Co Ltd 光起電力装置の劣化回復方法
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium
AU580903B2 (en) * 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246617A (ja) * 2001-02-16 2002-08-30 Honda Motor Co Ltd 電界効果型の太陽電池
JP2005506705A (ja) * 2001-10-10 2005-03-03 メルク　パテント　ゲゼルシャフト　ミット　ベシュレンクテル　ハフトング エッチングおよびドーピング複合物質
JP2011029651A (ja) * 2001-10-10 2011-02-10 Merck Patent Gmbh エッチングおよびドーピング複合物質
JP4837252B2 (ja) * 2001-10-10 2011-12-14 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング エッチングおよびドーピング複合物質

Also Published As

Publication number Publication date
DE3871456D1 (de) 1992-07-02
NO174569C (no) 1994-05-25
EP0301471A2 (de) 1989-02-01
EP0301471A3 (en) 1990-01-31
US4891325A (en) 1990-01-02
ES2032906T3 (es) 1993-03-01
NO883362L (no) 1989-01-31
EP0301471B1 (de) 1992-05-27
DE3725346A1 (de) 1989-02-09
NO174569B (no) 1994-02-14
NO883362D0 (no) 1988-07-29
IN170013B (ja) 1992-01-25

Similar Documents

Publication Publication Date Title
JPS6444074A (en) Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery
DE59208271D1 (de) Verfahren zur Herstellung einer Solarzelle sowie Solarzelle
EP1670067A3 (en) Reverse biasing method and apparatus for solar battery module
EP0365107A3 (en) Manufacturing method for vertically conductive semiconductor devices
JPS5544789A (en) Formation of mono-crystal semiconductor layer
JPS5676575A (en) Manufacture of junction type field effect semiconductor device
JPS6450446A (en) Method and structure for integrated circuit pad contact
JPS5333050A (en) Production of semiconductor element
GB2160360A (en) Method of fabricating solar cells
JPS5688362A (en) Vertical type power mos transistor
JPS5661175A (en) Thin-film solar cell
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS574177A (en) Manufacture of solar cell
JPS533066A (en) Electrode formation method
JPS55132066A (en) Hall effect semiconductor integrated circuit
JPS57206060A (en) Manufacturing method for semiconductor device
JPS5651830A (en) Glassivating method for bevel-type semiconductor element
JPS57199251A (en) Semiconductor device
JPS5612765A (en) Mos dynamic memory cell
JPS5344180A (en) Semiconductor inspecting method
JPS5516421A (en) Manufacturing method of semiconductor device
JPS56140644A (en) Semiconductor device and manufacture thereof
JPS56146281A (en) Manufacture of semiconductor integrated circuit
JPS57121225A (en) Formation of contact
JPS5723220A (en) Formation of multilayer electrode for semiconductor device