JPS6441852A - Hydrogen ion sensitive semiconductor sensor - Google Patents

Hydrogen ion sensitive semiconductor sensor

Info

Publication number
JPS6441852A
JPS6441852A JP62198014A JP19801487A JPS6441852A JP S6441852 A JPS6441852 A JP S6441852A JP 62198014 A JP62198014 A JP 62198014A JP 19801487 A JP19801487 A JP 19801487A JP S6441852 A JPS6441852 A JP S6441852A
Authority
JP
Japan
Prior art keywords
film
hydrogen ion
ion sensitive
sinx
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62198014A
Other languages
English (en)
Inventor
Akihiko Mochizuki
Hideyo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP62198014A priority Critical patent/JPS6441852A/ja
Publication of JPS6441852A publication Critical patent/JPS6441852A/ja
Pending legal-status Critical Current

Links

JP62198014A 1987-08-10 1987-08-10 Hydrogen ion sensitive semiconductor sensor Pending JPS6441852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62198014A JPS6441852A (en) 1987-08-10 1987-08-10 Hydrogen ion sensitive semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198014A JPS6441852A (en) 1987-08-10 1987-08-10 Hydrogen ion sensitive semiconductor sensor

Publications (1)

Publication Number Publication Date
JPS6441852A true JPS6441852A (en) 1989-02-14

Family

ID=16384077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198014A Pending JPS6441852A (en) 1987-08-10 1987-08-10 Hydrogen ion sensitive semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS6441852A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918147A (en) * 1995-03-29 1999-06-29 Motorola, Inc. Process for forming a semiconductor device with an antireflective layer
KR100441664B1 (ko) * 2001-08-11 2004-07-27 재단법인 포항산업과학연구원 실리콘질화물/글래스 적층구조의 수소이온 감지막을 갖는마이크로 수소이온농도 센서
KR100477447B1 (ko) * 2002-08-30 2005-03-22 재단법인 포항산업과학연구원 이온 주입법을 이용한 ｐｈ센서용 검출전극부 및 그 형성방법
KR100759926B1 (ko) * 2005-01-19 2007-09-18 대윤계기산업 주식회사 수소이온 선택성 전극막 및 이의 제조 방법
US8197650B2 (en) 2007-06-07 2012-06-12 Sensor Innovations, Inc. Silicon electrochemical sensors
CN109709263A (zh) * 2017-10-25 2019-05-03 天津市业洪检测技术发展有限公司 防水材料性能的检测
KR20210033621A (ko) * 2019-09-19 2021-03-29 한국센서연구소 주식회사 튜브형 기준 전극과 isfet를 포함하는 센서

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5918147A (en) * 1995-03-29 1999-06-29 Motorola, Inc. Process for forming a semiconductor device with an antireflective layer
KR100441664B1 (ko) * 2001-08-11 2004-07-27 재단법인 포항산업과학연구원 실리콘질화물/글래스 적층구조의 수소이온 감지막을 갖는마이크로 수소이온농도 센서
KR100477447B1 (ko) * 2002-08-30 2005-03-22 재단법인 포항산업과학연구원 이온 주입법을 이용한 ｐｈ센서용 검출전극부 및 그 형성방법
KR100759926B1 (ko) * 2005-01-19 2007-09-18 대윤계기산업 주식회사 수소이온 선택성 전극막 및 이의 제조 방법
US8197650B2 (en) 2007-06-07 2012-06-12 Sensor Innovations, Inc. Silicon electrochemical sensors
US8506779B2 (en) 2007-06-07 2013-08-13 Sensor Innovations, Inc. Electrochemical sensors
CN109709263A (zh) * 2017-10-25 2019-05-03 天津市业洪检测技术发展有限公司 防水材料性能的检测
KR20210033621A (ko) * 2019-09-19 2021-03-29 한국센서연구소 주식회사 튜브형 기준 전극과 isfet를 포함하는 센서

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