JPS5565461A - Semiconductor switch - Google Patents
Semiconductor switchInfo
- Publication number
- JPS5565461A JPS5565461A JP13783578A JP13783578A JPS5565461A JP S5565461 A JPS5565461 A JP S5565461A JP 13783578 A JP13783578 A JP 13783578A JP 13783578 A JP13783578 A JP 13783578A JP S5565461 A JPS5565461 A JP S5565461A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- resistance
- poly
- resistor
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 230000035945 sensitivity Effects 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
Abstract
PURPOSE:To improve gate sensitivity and dv/dt resistance, by using a poly-Si resistor having a negative or a small positive temperature coefficient between gate and cathode. CONSTITUTION:A pnpn element structure gate 8 and cathode 9 are connected by poly-Si 10, and by feeding transient current to resistor 10, erroneous ignition is prevented. When the resistance is excessively large, there is no effect. Since the temperature coefficient of poly-Si resistor can be controlled by varying the impurity concentration, the characteristics that are influenced by the resistance between gate and cathode, such as, dv/dt resistance, gate sensitivity, holding current, can be designed optimum over the entire range of temperatures. Further, it is, of course, possible to insert poly-Si between gate and anode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13783578A JPS5565461A (en) | 1978-11-10 | 1978-11-10 | Semiconductor switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13783578A JPS5565461A (en) | 1978-11-10 | 1978-11-10 | Semiconductor switch |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5565461A true JPS5565461A (en) | 1980-05-16 |
Family
ID=15207934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13783578A Pending JPS5565461A (en) | 1978-11-10 | 1978-11-10 | Semiconductor switch |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5565461A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857747A (en) * | 1981-09-30 | 1983-04-06 | Sharp Corp | Semiconductor device |
JPS5857748A (en) * | 1981-09-30 | 1983-04-06 | Sharp Corp | Semiconductor device |
JPS5969970A (en) * | 1982-10-15 | 1984-04-20 | Nec Home Electronics Ltd | Semiconductor device |
JPS6397251U (en) * | 1986-12-15 | 1988-06-23 | ||
US5424563A (en) * | 1993-12-27 | 1995-06-13 | Harris Corporation | Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
-
1978
- 1978-11-10 JP JP13783578A patent/JPS5565461A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5857747A (en) * | 1981-09-30 | 1983-04-06 | Sharp Corp | Semiconductor device |
JPS5857748A (en) * | 1981-09-30 | 1983-04-06 | Sharp Corp | Semiconductor device |
JPH0337746B2 (en) * | 1981-09-30 | 1991-06-06 | Sharp Kk | |
JPH0337745B2 (en) * | 1981-09-30 | 1991-06-06 | Sharp Kk | |
JPS5969970A (en) * | 1982-10-15 | 1984-04-20 | Nec Home Electronics Ltd | Semiconductor device |
JPS6397251U (en) * | 1986-12-15 | 1988-06-23 | ||
US5424563A (en) * | 1993-12-27 | 1995-06-13 | Harris Corporation | Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices |
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