JPS6397251U

JPS6397251U -

Info

Publication number: JPS6397251U
Application number: JP19330586U
Authority: JP
Priority date: 1986-12-15
Filing date: 1986-12-15
Publication date: 1988-06-23

Description

[Brief explanation of the drawing]

第１図ａおよびｂは本考案の一実施例を示す平
面図およびＡ―Ａ線断面図、第２図は第１図のＣ
部の拡大断面図、第３図ａおよびｂは従来のサイ
リスタの一例の平面図およびＢ―Ｂ線断面図であ
る。１１，２１…Ｎ形半導体基板、１２，２２…Ｐ
形絶縁分離層、１３，２３…Ｐ形ベース層、１４
，２４…Ｎ形エミツタ層、１５，２５…絶縁膜層
、１６，２６…カソード電極、１７，２７…ゲー
ト電極、１８，２８…アノード電極、１９…ポリ
シリコンの抵抗体。 Figures 1a and b are a plan view and a cross-sectional view taken along line A--A showing an embodiment of the present invention, and Figure 2 is a
FIGS. 3A and 3B are a plan view and a sectional view taken along the line B--B of an example of a conventional thyristor. 11, 21...N type semiconductor substrate, 12, 22...P
type insulating separation layer, 13, 23...P type base layer, 14
, 24... N-type emitter layer, 15, 25... Insulating film layer, 16, 26... Cathode electrode, 17, 27... Gate electrode, 18, 28... Anode electrode, 19... Polysilicon resistor.

Claims

[Scope of utility model registration request]

After forming a P-type insulating separation layer on an N-type semiconductor substrate, and further forming a P-type base layer and an N-type emitter layer, an insulating layer is formed on the P-N junction layer, and then a cathode electrode, a gate electrode, and an anode are formed. In a thyristor with an electrode, a polysilicon resistor is formed in a predetermined thickness and shape between the cathode electrode and the gate electrode, and boron is implanted by ion implantation to achieve a predetermined electrical conductivity. A thyristor that is characterized by its high temperature.