JPS62180965U - - Google Patents
Info
- Publication number
- JPS62180965U JPS62180965U JP5362687U JP5362687U JPS62180965U JP S62180965 U JPS62180965 U JP S62180965U JP 5362687 U JP5362687 U JP 5362687U JP 5362687 U JP5362687 U JP 5362687U JP S62180965 U JPS62180965 U JP S62180965U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- conductivity type
- region
- semiconductor
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Description
第１図ａ〜ｅは本考案一実施例のツエナーダイ
オードをその製造工程順に示した断面図である。
３０１……Ｐ型半導体基板、３０２……Ｎ型埋
込層、３０３，３０４……Ｐ型埋込層、３０５…
…Ｎ型エピタキシヤル層、３０６……Ｐ型絶縁分
離層、３０７……埋込ツエナー領域、３０８……
埋込ツエナー周辺領域、３０９……高濃度Ｎ型拡
散層、３１０……酸化膜、３１１……カソード電
極、３１２……アノード電極、３１３……酸化膜
、３１４……Ｎ型拡散層、３１５，３１６……Ｐ
型拡散層、３１７，３１８，３１９……Ｐ型拡散
層。
FIGS. 1a to 1e are cross-sectional views showing a Zener diode according to an embodiment of the present invention in the order of manufacturing steps. 301... P-type semiconductor substrate, 302... N-type buried layer, 303, 304... P-type buried layer, 305...
...N-type epitaxial layer, 306...P-type insulating separation layer, 307...buried Zener region, 308...
Buried Zener peripheral region, 309... High concentration N type diffusion layer, 310... Oxide film, 311... Cathode electrode, 312... Anode electrode, 313... Oxide film, 314... N type diffusion layer, 315, 316...P
type diffusion layer, 317, 318, 319...P type diffusion layer.
Claims (1)
導体領域上に形成された他の導電型の第２の半導
体領域と、前記第２の半導体領域上に形成された
前記一導電型の第３の半導体領域と、前記第１の
半導体領域、前記第２の半導体領域および前記第
３の半導体領域上に形成された前記他の導電型の
第４の半導体領域と、前記第４の半導体領域内に
該第４の半導体領域を上下に貫いて形成されて前
記第３の半導体領域と接する前記一導電型の第５
の半導体領域と、該第５の半導体領域の上部を覆
つて該第５の半導体領域との間のみにＰＮ接合を
有するとともに前記第４の半導体領域の上部に連
続して形成された前記他の導電型の第６の半導体
領域と、前記第６の半導体領域から離間して前記
第４の半導体領域を上下に貫きかつ前記第３の半
導体領域と接する前記一導電型の第７の半導体領
域と、前記第７の半導体領域に電気的に接続する
一方の端子と、前記第６の半導体領域に電気的に
接続する他方の端子とを有することを特徴とする
ツエナーダイオード。 A first semiconductor region of one conductivity type, a second semiconductor region of another conductivity type formed on the first semiconductor region, and a second semiconductor region of the one conductivity type formed on the second semiconductor region. a third semiconductor region, a fourth semiconductor region of the other conductivity type formed on the first semiconductor region, the second semiconductor region, and the third semiconductor region; The fifth semiconductor region of one conductivity type is formed in the region vertically penetrating the fourth semiconductor region and is in contact with the third semiconductor region.
and the other semiconductor region, which covers the upper part of the fifth semiconductor region and has a PN junction only between the semiconductor region and the fifth semiconductor region, and is formed continuously on the upper part of the fourth semiconductor region. a sixth semiconductor region of a conductive type; and a seventh semiconductor region of one conductive type that is spaced apart from the sixth semiconductor region, vertically penetrates the fourth semiconductor region, and is in contact with the third semiconductor region; , a Zener diode comprising one terminal electrically connected to the seventh semiconductor region and the other terminal electrically connected to the sixth semiconductor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362687U JPS62180965U (en) | 1987-04-09 | 1987-04-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5362687U JPS62180965U (en) | 1987-04-09 | 1987-04-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62180965U true JPS62180965U (en) | 1987-11-17 |
Family
ID=30879866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5362687U Pending JPS62180965U (en) | 1987-04-09 | 1987-04-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62180965U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (en) * | 1973-11-29 | 1975-07-09 |
-
1987
- 1987-04-09 JP JP5362687U patent/JPS62180965U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (en) * | 1973-11-29 | 1975-07-09 |
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