GB1432986A - Charge-coupled arrangements - Google Patents

Charge-coupled arrangements

Info

Publication number
GB1432986A
GB1432986A GB3309073A GB3309073A GB1432986A GB 1432986 A GB1432986 A GB 1432986A GB 3309073 A GB3309073 A GB 3309073A GB 3309073 A GB3309073 A GB 3309073A GB 1432986 A GB1432986 A GB 1432986A
Authority
GB
United Kingdom
Prior art keywords
charge
layer
electrodes
counter
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3309073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1432986A publication Critical patent/GB1432986A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

1432986 Charge-coupled semi-conductor devices SIEMENS AG 11 July 1973 [16 Aug 1972] 33090/73 Heading H1K Light reaches the semi-conductor layer 3 of a radiation - sensitive charge - coupled device through a transparent insulating substrate 4, e.g. of spinel. The substrate 4 and layer 3 may be about 250 Á and 1 Á thick respectively, the latter being of monocrystalline Si with SiO 2 insulation S and Al electrodes 1, 2. The semiconductor material beneath the gaps between the electrodes may be counter-doped, e.g. by ion implantation, with impurities of the opposite type to those of the layer 3 to a sufficient level only partially to compensate the original dopant concentration or to an extent sufficient to convert the counter-doped material to the opposite conductivity type.
GB3309073A 1972-08-16 1973-07-11 Charge-coupled arrangements Expired GB1432986A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240276 DE2240276A1 (en) 1972-08-16 1972-08-16 CHARGE SHIFTING ARRANGEMENT AS PHOTODETECTOR

Publications (1)

Publication Number Publication Date
GB1432986A true GB1432986A (en) 1976-04-22

Family

ID=5853710

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3309073A Expired GB1432986A (en) 1972-08-16 1973-07-11 Charge-coupled arrangements

Country Status (9)

Country Link
JP (1) JPS4965190A (en)
BE (1) BE803590A (en)
CH (1) CH557093A (en)
DE (1) DE2240276A1 (en)
FR (1) FR2196525B3 (en)
GB (1) GB1432986A (en)
IT (1) IT998330B (en)
LU (1) LU68227A1 (en)
NL (1) NL7311204A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983205A (en) * 2012-12-04 2013-03-20 中国科学院新疆理化技术研究所 Silicon photodetector and manufacturing method and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983205A (en) * 2012-12-04 2013-03-20 中国科学院新疆理化技术研究所 Silicon photodetector and manufacturing method and application thereof

Also Published As

Publication number Publication date
FR2196525A1 (en) 1974-03-15
BE803590A (en) 1974-02-14
IT998330B (en) 1976-01-20
FR2196525B3 (en) 1976-07-30
NL7311204A (en) 1974-02-19
CH557093A (en) 1974-12-13
JPS4965190A (en) 1974-06-24
LU68227A1 (en) 1974-02-21
DE2240276A1 (en) 1974-02-28

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed