CH557093A - PHOTODETECTOR WITH A SEMICONDUCTOR BODY AND AN ELECTRICALLY INSULATING LAYER. - Google Patents

PHOTODETECTOR WITH A SEMICONDUCTOR BODY AND AN ELECTRICALLY INSULATING LAYER.

Info

Publication number
CH557093A
CH557093A CH993473A CH993473A CH557093A CH 557093 A CH557093 A CH 557093A CH 993473 A CH993473 A CH 993473A CH 993473 A CH993473 A CH 993473A CH 557093 A CH557093 A CH 557093A
Authority
CH
Switzerland
Prior art keywords
photodetector
insulating layer
electrically insulating
semiconductor body
semiconductor
Prior art date
Application number
CH993473A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH557093A publication Critical patent/CH557093A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1091Substrate region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CH993473A 1972-08-16 1973-07-09 PHOTODETECTOR WITH A SEMICONDUCTOR BODY AND AN ELECTRICALLY INSULATING LAYER. CH557093A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240276 DE2240276A1 (en) 1972-08-16 1972-08-16 CHARGE SHIFTING ARRANGEMENT AS PHOTODETECTOR

Publications (1)

Publication Number Publication Date
CH557093A true CH557093A (en) 1974-12-13

Family

ID=5853710

Family Applications (1)

Application Number Title Priority Date Filing Date
CH993473A CH557093A (en) 1972-08-16 1973-07-09 PHOTODETECTOR WITH A SEMICONDUCTOR BODY AND AN ELECTRICALLY INSULATING LAYER.

Country Status (9)

Country Link
JP (1) JPS4965190A (en)
BE (1) BE803590A (en)
CH (1) CH557093A (en)
DE (1) DE2240276A1 (en)
FR (1) FR2196525B3 (en)
GB (1) GB1432986A (en)
IT (1) IT998330B (en)
LU (1) LU68227A1 (en)
NL (1) NL7311204A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983205B (en) * 2012-12-04 2015-08-19 中国科学院新疆理化技术研究所 A kind of Si-based photodetectors and preparation method and purposes

Also Published As

Publication number Publication date
GB1432986A (en) 1976-04-22
LU68227A1 (en) 1974-02-21
FR2196525B3 (en) 1976-07-30
BE803590A (en) 1974-02-14
NL7311204A (en) 1974-02-19
DE2240276A1 (en) 1974-02-28
JPS4965190A (en) 1974-06-24
FR2196525A1 (en) 1974-03-15
IT998330B (en) 1976-01-20

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Legal Events

Date Code Title Description
PL Patent ceased