JPS6417469A - Output detector for charge transfer element - Google Patents

Output detector for charge transfer element

Info

Publication number
JPS6417469A
JPS6417469A JP62174120A JP17412087A JPS6417469A JP S6417469 A JPS6417469 A JP S6417469A JP 62174120 A JP62174120 A JP 62174120A JP 17412087 A JP17412087 A JP 17412087A JP S6417469 A JPS6417469 A JP S6417469A
Authority
JP
Japan
Prior art keywords
buried channel
channel layer
mos transistor
layer
signal charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62174120A
Other languages
English (en)
Other versions
JP2666928B2 (ja
Inventor
Masayuki Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62174120A priority Critical patent/JP2666928B2/ja
Priority to US07/218,291 priority patent/US4984045A/en
Publication of JPS6417469A publication Critical patent/JPS6417469A/ja
Application granted granted Critical
Publication of JP2666928B2 publication Critical patent/JP2666928B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP62174120A 1987-07-13 1987-07-13 電荷転送素子の出力検出器 Expired - Fee Related JP2666928B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62174120A JP2666928B2 (ja) 1987-07-13 1987-07-13 電荷転送素子の出力検出器
US07/218,291 US4984045A (en) 1987-07-13 1988-07-12 Output sensor of charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62174120A JP2666928B2 (ja) 1987-07-13 1987-07-13 電荷転送素子の出力検出器

Publications (2)

Publication Number Publication Date
JPS6417469A true JPS6417469A (en) 1989-01-20
JP2666928B2 JP2666928B2 (ja) 1997-10-22

Family

ID=15972992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62174120A Expired - Fee Related JP2666928B2 (ja) 1987-07-13 1987-07-13 電荷転送素子の出力検出器

Country Status (2)

Country Link
US (1) US4984045A (ja)
JP (1) JP2666928B2 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338524A (ja) * 1993-03-31 1994-12-06 Toshiba Corp 電荷転送装置
JPH07106551A (ja) * 1993-09-01 1995-04-21 Gold Star Electron Co Ltd 電荷検出素子
JPH10335625A (ja) * 1997-05-30 1998-12-18 Canon Inc 光電変換装置及び密着型イメージセンサ
JP2010186826A (ja) * 2009-02-10 2010-08-26 Sony Corp 電荷検出装置及び電荷検出方法、並びに固体撮像装置及びその駆動方法、並びに撮像装置
CZ302657B6 (cs) * 2010-07-15 2011-08-17 CVUT v Praze, Fakulta strojní Dvoupláštový komorový tlakový válec

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
US5270559A (en) * 1990-10-15 1993-12-14 California Institute Of Technology Method and apparatus for making highly accurate potential well adjustments in CCD's
US5338946A (en) * 1993-01-08 1994-08-16 Eastman Kodak Company Solid state image sensor with fast reset
JP2875132B2 (ja) * 1993-02-25 1999-03-24 シャープ株式会社 電荷転送装置
US5438211A (en) * 1993-03-31 1995-08-01 Kabushiki Kaisha Toshiba Charge-transfer device having an improved charge-sensing section
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JPH0786568A (ja) * 1993-09-09 1995-03-31 Nec Corp 電荷転送装置
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
EP0719456B1 (en) * 1994-06-23 1999-09-29 Koninklijke Philips Electronics N.V. Charge coupled device, and imaging device comprising such a charge coupled device
JP3397895B2 (ja) * 1994-07-05 2003-04-21 三洋電機株式会社 固体撮像素子
US5622880A (en) * 1994-08-18 1997-04-22 Sun Microsystems, Inc. Method of making a low power, high performance junction transistor
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
US5712498A (en) * 1996-08-26 1998-01-27 Massachusetts Institute Of Technology Charge modulation device
JP4686830B2 (ja) * 2000-08-28 2011-05-25 ソニー株式会社 固体撮像素子及びその駆動方法
US9029132B2 (en) 2009-08-06 2015-05-12 International Business Machines Corporation Sensor for biomolecules
US8052931B2 (en) 2010-01-04 2011-11-08 International Business Machines Corporation Ultra low-power CMOS based bio-sensor circuit
US9068935B2 (en) 2010-04-08 2015-06-30 International Business Machines Corporation Dual FET sensor for sensing biomolecules and charged ions in an electrolyte
CN102610623A (zh) * 2012-01-11 2012-07-25 格科微电子（上海）有限公司 图像传感器及源跟随器
CN102522417B (zh) * 2012-01-11 2014-07-16 格科微电子（上海）有限公司 图像传感器及源跟随器
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
CN104112754A (zh) * 2014-07-03 2014-10-22 格科微电子（上海）有限公司 图像传感器及其形成方法
CN107301393B (zh) * 2017-06-20 2018-03-23 安徽泓森物联网有限公司 自适应开关大数据管理平台

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
NL7709916A (nl) * 1977-09-09 1979-03-13 Philips Nv Ladingsgekoppelde inrichting.
JPS5955067A (ja) * 1982-09-24 1984-03-29 Toshiba Corp 電荷転送装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338524A (ja) * 1993-03-31 1994-12-06 Toshiba Corp 電荷転送装置
JPH07106551A (ja) * 1993-09-01 1995-04-21 Gold Star Electron Co Ltd 電荷検出素子
JPH10335625A (ja) * 1997-05-30 1998-12-18 Canon Inc 光電変換装置及び密着型イメージセンサ
JP2010186826A (ja) * 2009-02-10 2010-08-26 Sony Corp 電荷検出装置及び電荷検出方法、並びに固体撮像装置及びその駆動方法、並びに撮像装置
CZ302657B6 (cs) * 2010-07-15 2011-08-17 CVUT v Praze, Fakulta strojní Dvoupláštový komorový tlakový válec

Also Published As

Publication number Publication date
JP2666928B2 (ja) 1997-10-22
US4984045A (en) 1991-01-08

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Legal Events

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