JPS6411391A - Optical semiconductor element - Google Patents

Optical semiconductor element

Info

Publication number
JPS6411391A
JPS6411391A JP16831487A JP16831487A JPS6411391A JP S6411391 A JPS6411391 A JP S6411391A JP 16831487 A JP16831487 A JP 16831487A JP 16831487 A JP16831487 A JP 16831487A JP S6411391 A JPS6411391 A JP S6411391A
Authority
JP
Japan
Prior art keywords
density
diffusing
resistivity
distribution
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16831487A
Other languages
Japanese (ja)
Other versions
JP2529856B2 (en
Inventor
Masashi Usami
Shigeyuki Akiba
Katsuyuki Uko
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP62168314A priority Critical patent/JP2529856B2/en
Publication of JPS6411391A publication Critical patent/JPS6411391A/en
Application granted granted Critical
Publication of JP2529856B2 publication Critical patent/JP2529856B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To scarcely saturate an output light even at the time of high output operation and to provide stable output characteristic by varying in advance an electric resistance per unit volume in a section having a maximum light intensity distribution of irregular light intensity distribution characteristics along a light propagating direction. CONSTITUTION:A zinc diffused region 11 having an irregular density is formed along the light propagating direction in a P-type InP clad layer 5 and a P-type InGaAsP cap layer 7, and its electric resistivity is varied. In order to spatially control the zinc diffusing density, a diffusing window of suitable density is formed by an adequate mask pattern at a diffusing mask material to be performed. The resistivity is inversely proportional to the zinc diffusing density. The current density distribution to be injected to an active layer 3 has a distribution responsive to the resistivity. Accordingly, the distribution of carrier density in the light propagating direction becomes substantially uniform by controlling the zinc diffusing density so that the resistivity becomes inversely proportional to the light intensity distribution, and a spatial hole burning does not occur. The forward output light is not saturated even at the time of injecting a high current, sole wavelength characteristic is not deteriorated, and stable laser characteristic can be performed.
JP62168314A 1987-07-06 1987-07-06 Optical semiconductor device Expired - Fee Related JP2529856B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62168314A JP2529856B2 (en) 1987-07-06 1987-07-06 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168314A JP2529856B2 (en) 1987-07-06 1987-07-06 Optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS6411391A true JPS6411391A (en) 1989-01-13
JP2529856B2 JP2529856B2 (en) 1996-09-04

Family

ID=15865736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168314A Expired - Fee Related JP2529856B2 (en) 1987-07-06 1987-07-06 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2529856B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020105095A1 (en) * 2018-11-19 2021-05-13 三菱電機株式会社 Optical semiconductor device and manufacturing method of optical semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584995A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584995A (en) * 1981-07-01 1983-01-12 Mitsubishi Electric Corp Semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020105095A1 (en) * 2018-11-19 2021-05-13 三菱電機株式会社 Optical semiconductor device and manufacturing method of optical semiconductor device

Also Published As

Publication number Publication date
JP2529856B2 (en) 1996-09-04

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees