JPS6410656A - Complementary type semiconductor device - Google Patents

Complementary type semiconductor device

Info

Publication number
JPS6410656A
JPS6410656A JP62165177A JP16517787A JPS6410656A JP S6410656 A JPS6410656 A JP S6410656A JP 62165177 A JP62165177 A JP 62165177A JP 16517787 A JP16517787 A JP 16517787A JP S6410656 A JPS6410656 A JP S6410656A
Authority
JP
Japan
Prior art keywords
type well
shallow
diffusion layer
type
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165177A
Other languages
English (en)
Inventor
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62165177A priority Critical patent/JPS6410656A/ja
Priority to KR1019880007550A priority patent/KR890003047A/ko
Priority to US07/214,674 priority patent/US4907058A/en
Publication of JPS6410656A publication Critical patent/JPS6410656A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
JP62165177A 1987-07-03 1987-07-03 Complementary type semiconductor device Pending JPS6410656A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62165177A JPS6410656A (en) 1987-07-03 1987-07-03 Complementary type semiconductor device
KR1019880007550A KR890003047A (ko) 1987-07-03 1988-06-22 2중의 웰을 갖는 cmos 반도체 장치
US07/214,674 US4907058A (en) 1987-07-03 1988-07-01 Complementary semiconductor device having a double well

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165177A JPS6410656A (en) 1987-07-03 1987-07-03 Complementary type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6410656A true JPS6410656A (en) 1989-01-13

Family

ID=15807315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165177A Pending JPS6410656A (en) 1987-07-03 1987-07-03 Complementary type semiconductor device

Country Status (3)

Country Link
US (1) US4907058A (ja)
JP (1) JPS6410656A (ja)
KR (1) KR890003047A (ja)

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US5093707A (en) * 1988-04-27 1992-03-03 Kabushiki Kaisha Toshiba Semiconductor device with bipolar and cmos transistors
JPH02168666A (ja) * 1988-09-29 1990-06-28 Mitsubishi Electric Corp 相補型半導体装置とその製造方法
US5239197A (en) * 1990-01-29 1993-08-24 Matsushita Electronics Corporation Non-volatile memory device and transistor circuits on the same chip
JPH0824171B2 (ja) * 1990-05-02 1996-03-06 三菱電機株式会社 半導体記憶装置およびその製造方法
US5157281A (en) * 1991-07-12 1992-10-20 Texas Instruments Incorporated Level-shifter circuit for integrated circuits
KR950009815B1 (ko) * 1991-12-23 1995-08-28 삼성전자주식회사 트리플웰 구조를 가지는 고집적 반도체 메모리 장치
JP2953482B2 (ja) * 1992-01-17 1999-09-27 日本電気株式会社 Ｃｍｏｓ集積回路
KR960012303B1 (ko) * 1992-08-18 1996-09-18 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
JP3363502B2 (ja) * 1993-02-01 2003-01-08 三菱電機株式会社 半導体記憶装置の製造方法
US5375083A (en) * 1993-02-04 1994-12-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit including a substrate having a memory cell array surrounded by a well structure
JP2839819B2 (ja) * 1993-05-28 1998-12-16 株式会社東芝 不揮発性半導体記憶装置
US6406955B1 (en) 1994-05-17 2002-06-18 Samsung Electronics Co., Ltd Method for manufacturing CMOS devices having transistors with mutually different punch-through voltage characteristics
KR0144959B1 (ko) * 1994-05-17 1998-07-01 김광호 반도체장치 및 제조방법
JP3400891B2 (ja) * 1995-05-29 2003-04-28 三菱電機株式会社 半導体記憶装置およびその製造方法
US5674762A (en) * 1995-08-28 1997-10-07 Motorola, Inc. Method of fabricating an EPROM with high voltage transistors
JP3958388B2 (ja) * 1996-08-26 2007-08-15 株式会社ルネサステクノロジ 半導体装置
JP3777000B2 (ja) * 1996-12-20 2006-05-24 富士通株式会社 半導体装置とその製造方法
US5972745A (en) * 1997-05-30 1999-10-26 International Business Machines Corporation Method or forming self-aligned halo-isolated wells
US6107672A (en) * 1997-09-04 2000-08-22 Matsushita Electronics Corporation Semiconductor device having a plurality of buried wells
KR100295135B1 (ko) * 1997-12-31 2001-07-12 윤종용 멀티-비트 셀 구조를 갖는 비휘발성 메모리 장치
JP3049001B2 (ja) * 1998-02-12 2000-06-05 日本電気アイシーマイコンシステム株式会社 ヒューズ装置およびその製造方法
JP3733252B2 (ja) * 1998-11-02 2006-01-11 セイコーエプソン株式会社 半導体記憶装置及びその製造方法
JP2000277629A (ja) * 1999-03-23 2000-10-06 Nec Corp 半導体記憶装置及びその製造方法
US7560779B2 (en) * 1999-11-30 2009-07-14 Texas Instruments Incorporated Method for forming a mixed voltage circuit having complementary devices
JP2003273351A (ja) * 2002-03-18 2003-09-26 Seiko Epson Corp 半導体装置およびその製造方法
US6936898B2 (en) 2002-12-31 2005-08-30 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
US7323367B1 (en) * 2002-12-31 2008-01-29 Transmeta Corporation Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions
JP4508606B2 (ja) * 2003-03-20 2010-07-21 株式会社リコー 複数種類のウエルを備えた半導体装置の製造方法
US7174528B1 (en) 2003-10-10 2007-02-06 Transmeta Corporation Method and apparatus for optimizing body bias connections in CMOS circuits using a deep n-well grid structure
US7645673B1 (en) * 2004-02-03 2010-01-12 Michael Pelham Method for generating a deep N-well pattern for an integrated circuit design
US7759740B1 (en) 2004-03-23 2010-07-20 Masleid Robert P Deep well regions for routing body-bias voltage to mosfets in surface well regions having separation wells of p-type between the segmented deep n wells
US7388260B1 (en) 2004-03-31 2008-06-17 Transmeta Corporation Structure for spanning gap in body-bias voltage routing structure
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
US7199431B2 (en) * 2004-10-25 2007-04-03 Taiwan Semiconductor Manufacturing Company Semiconductor devices with reduced impact from alien particles
US7305647B1 (en) 2005-07-28 2007-12-04 Transmeta Corporation Using standard pattern tiles and custom pattern tiles to generate a semiconductor design layout having a deep well structure for routing body-bias voltage
JP2007095827A (ja) * 2005-09-27 2007-04-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2007194424A (ja) * 2006-01-19 2007-08-02 Matsushita Electric Ind Co Ltd 保護素子およびその製造方法
US7759769B2 (en) * 2006-07-20 2010-07-20 System General Corp. Semiconductor structure of a high side driver
US8034699B2 (en) * 2009-05-12 2011-10-11 International Business Machines Corporation Isolation with offset deep well implants

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
EP0204979B1 (de) * 1985-06-03 1989-03-29 Siemens Aktiengesellschaft Verfahren zum gleichzeitigen Herstellen von bipolaren und komplementären MOS-Transistoren auf einem gemeinsamen Siliziumsubstrat
JPS627701A (ja) * 1985-07-03 1987-01-14 Daicel Chem Ind Ltd 部分加水分解法

Also Published As

Publication number Publication date
KR890003047A (ko) 1989-04-12
US4907058A (en) 1990-03-06

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