JPS6364908B2 - - Google Patents

Info

Publication number
JPS6364908B2
JPS6364908B2 JP56135142A JP13514281A JPS6364908B2 JP S6364908 B2 JPS6364908 B2 JP S6364908B2 JP 56135142 A JP56135142 A JP 56135142A JP 13514281 A JP13514281 A JP 13514281A JP S6364908 B2 JPS6364908 B2 JP S6364908B2
Authority
JP
Japan
Prior art keywords
layer
gate
thyristor
buried
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56135142A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5835973A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56135142A priority Critical patent/JPS5835973A/ja
Publication of JPS5835973A publication Critical patent/JPS5835973A/ja
Publication of JPS6364908B2 publication Critical patent/JPS6364908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP56135142A 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ Granted JPS5835973A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56135142A JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56135142A JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS5835973A JPS5835973A (ja) 1983-03-02
JPS6364908B2 true JPS6364908B2 (enExample) 1988-12-14

Family

ID=15144781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56135142A Granted JPS5835973A (ja) 1981-08-28 1981-08-28 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS5835973A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010232564A (ja) * 2009-03-27 2010-10-14 Shindengen Electric Mfg Co Ltd ３端子サイリスタ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152063A (ja) * 1984-01-20 1985-08-10 Toyo Electric Mfg Co Ltd 静電誘導サイリスタ
JPS60253269A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5117680A (en) * 1974-08-05 1976-02-12 Hitachi Ltd Geeto taan ofu sairisuta
JPS5428579A (en) * 1977-08-05 1979-03-03 Hitachi Ltd Field effect switching element
JPS54131886A (en) * 1978-04-04 1979-10-13 Meidensha Electric Mfg Co Ltd High-speed switching thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010232564A (ja) * 2009-03-27 2010-10-14 Shindengen Electric Mfg Co Ltd ３端子サイリスタ

Also Published As

Publication number Publication date
JPS5835973A (ja) 1983-03-02

Similar Documents

Publication Publication Date Title
EP0424710B1 (en) Thyristor and method of manufacturing the same
US5346838A (en) Method for fabricating an insulated gate control thyristor
JPS5891682A (ja) 半導体装置
JPS6188563A (ja) 半導体スイツチ
JPH01218067A (ja) バイポーラ型半導体スイッチング装置
JPH0624244B2 (ja) 複合半導体装置
US5194394A (en) Thyristor and method of manufacturing the same
JPS6364908B2 (enExample)
JPH04216674A (ja) 横形ｍｏｓ制御形サイリスタ
JPS5718360A (en) Gate controlling semiconductor element
JP3144585B2 (ja) 半導体装置
JPS625346B2 (enExample)
JPS63284856A (ja) 埋込みゲ−ト型ｇｔｏサイリスタ
JPS60231366A (ja) 電界効果トランジスタ
JPH01214164A (ja) 共鳴トンネリングトランジスタ
JP2637173B2 (ja) 半導体装置
JPS6112071A (ja) 半導体装置
JP2857200B2 (ja) 半導体装置
JPS6331411Y2 (enExample)
JPS60173869A (ja) 半導体集積回路装置
JPH03105925A (ja) 半導体装置
JPS61264751A (ja) 相補性ｍｉｓ型電界効果トランジスタ装置
JP3160330B2 (ja) Ｍｏｓアノードショート構造を有する半導体素子
JPS6027168A (ja) サイリスタ
JPS6253951B2 (enExample)