JPS6353854B2 - - Google Patents
Info
- Publication number
- JPS6353854B2 JPS6353854B2 JP56189663A JP18966381A JPS6353854B2 JP S6353854 B2 JPS6353854 B2 JP S6353854B2 JP 56189663 A JP56189663 A JP 56189663A JP 18966381 A JP18966381 A JP 18966381A JP S6353854 B2 JPS6353854 B2 JP S6353854B2
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical
- film
- raw material
- material gas
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000010408 film Substances 0.000 description 29
- 239000002994 raw material Substances 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 108091008695 photoreceptors Proteins 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189663A JPS5889943A (ja) | 1981-11-26 | 1981-11-26 | プラズマｃｖｄ法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56189663A JPS5889943A (ja) | 1981-11-26 | 1981-11-26 | プラズマｃｖｄ法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5889943A JPS5889943A (ja) | 1983-05-28 |
| JPS6353854B2 true JPS6353854B2 (enrdf_load_stackoverflow) | 1988-10-25 |
Family
ID=16245085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56189663A Granted JPS5889943A (ja) | 1981-11-26 | 1981-11-26 | プラズマｃｖｄ法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5889943A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0615716B2 (ja) * | 1983-07-05 | 1994-03-02 | キヤノン株式会社 | プラズマｃｖｄ装置 |
| JPS6024378A (ja) * | 1983-07-19 | 1985-02-07 | Kyocera Corp | 量産型グロ−放電分解装置 |
| JPS6029470A (ja) * | 1983-07-27 | 1985-02-14 | Kyocera Corp | 量産型グロ−放電分解装置 |
| JPS6036664A (ja) * | 1983-09-26 | 1985-02-25 | Kyocera Corp | 量産型グロー放電分解装置 |
| JPS6088955A (ja) * | 1983-10-21 | 1985-05-18 | Stanley Electric Co Ltd | プラズマｃｖｄ装置 |
| JPS60114573A (ja) * | 1983-11-22 | 1985-06-21 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作製方法 |
-
1981
- 1981-11-26 JP JP56189663A patent/JPS5889943A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5889943A (ja) | 1983-05-28 |
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