JPS6289341A - マスタスライス方式大規模半導体集積回路装置の製造方法 - Google Patents

マスタスライス方式大規模半導体集積回路装置の製造方法

Info

Publication number
JPS6289341A
JPS6289341A JP60230740A JP23074085A JPS6289341A JP S6289341 A JPS6289341 A JP S6289341A JP 60230740 A JP60230740 A JP 60230740A JP 23074085 A JP23074085 A JP 23074085A JP S6289341 A JPS6289341 A JP S6289341A
Authority
JP
Japan
Prior art keywords
forming
polycrystalline silicon
integrated circuit
circuit device
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60230740A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373147B2 (enrdf_load_stackoverflow
Inventor
Hisayasu Sato
久恭 佐藤
Takashi Nishimura
尚 西村
Norio Tosaka
範雄 東坂
Shuichi Kato
周一 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60230740A priority Critical patent/JPS6289341A/ja
Priority to DE19863634850 priority patent/DE3634850A1/de
Publication of JPS6289341A publication Critical patent/JPS6289341A/ja
Publication of JPH0373147B2 publication Critical patent/JPH0373147B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP60230740A 1985-10-15 1985-10-15 マスタスライス方式大規模半導体集積回路装置の製造方法 Granted JPS6289341A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60230740A JPS6289341A (ja) 1985-10-15 1985-10-15 マスタスライス方式大規模半導体集積回路装置の製造方法
DE19863634850 DE3634850A1 (de) 1985-10-15 1986-10-13 Verfahren zur herstellung einer groesstintegrierten halbleiter-schaltungseinrichtung vom standardscheibentyp

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60230740A JPS6289341A (ja) 1985-10-15 1985-10-15 マスタスライス方式大規模半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6289341A true JPS6289341A (ja) 1987-04-23
JPH0373147B2 JPH0373147B2 (enrdf_load_stackoverflow) 1991-11-20

Family

ID=16912556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60230740A Granted JPS6289341A (ja) 1985-10-15 1985-10-15 マスタスライス方式大規模半導体集積回路装置の製造方法

Country Status (2)

Country Link
JP (1) JPS6289341A (enrdf_load_stackoverflow)
DE (1) DE3634850A1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02119244A (ja) * 1988-10-28 1990-05-07 Nec Corp 半導体集積回路の製造方法
JPH0319273A (ja) * 1989-06-15 1991-01-28 Nec Corp 半導体装置
JPH05235276A (ja) * 1992-02-24 1993-09-10 Mitsubishi Electric Corp 半導体装置における抵抗体構造の形成方法
KR101200617B1 (ko) * 2001-09-25 2012-11-12 세이코 인스트루 가부시키가이샤 반도체 장치 및 그 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8726366D0 (en) * 1987-11-11 1987-12-16 Lsi Logic Ltd Ic array
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
DE69012848T2 (de) * 1989-02-09 1995-03-09 Sony Corp Integrierte Halbleiterschaltungsanordnungen.
JP2836318B2 (ja) * 1991-10-18 1998-12-14 日本電気株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495834A1 (fr) * 1980-12-05 1982-06-11 Cii Honeywell Bull Dispositif a circuits integres de haute densite
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
FR2515427A1 (fr) * 1981-10-27 1983-04-29 Efcis Procede de fabrication de resistances de forte valeur pour circuits integres
KR940002772B1 (ko) * 1984-08-31 1994-04-02 가부시기가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치 및 그 제조방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02119244A (ja) * 1988-10-28 1990-05-07 Nec Corp 半導体集積回路の製造方法
JPH0319273A (ja) * 1989-06-15 1991-01-28 Nec Corp 半導体装置
JPH05235276A (ja) * 1992-02-24 1993-09-10 Mitsubishi Electric Corp 半導体装置における抵抗体構造の形成方法
KR101200617B1 (ko) * 2001-09-25 2012-11-12 세이코 인스트루 가부시키가이샤 반도체 장치 및 그 제조방법

Also Published As

Publication number Publication date
DE3634850C2 (enrdf_load_stackoverflow) 1991-06-20
JPH0373147B2 (enrdf_load_stackoverflow) 1991-11-20
DE3634850A1 (de) 1987-04-23

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