JPS6259896B2 - - Google Patents

Info

Publication number
JPS6259896B2
JPS6259896B2 JP56122657A JP12265781A JPS6259896B2 JP S6259896 B2 JPS6259896 B2 JP S6259896B2 JP 56122657 A JP56122657 A JP 56122657A JP 12265781 A JP12265781 A JP 12265781A JP S6259896 B2 JPS6259896 B2 JP S6259896B2
Authority
JP
Japan
Prior art keywords
aluminum
gate electrode
insulating film
laser beam
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56122657A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5823479A (ja
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56122657A priority Critical patent/JPS5823479A/ja
Priority to US06/405,269 priority patent/US4468855A/en
Priority to DE8282304148T priority patent/DE3279614D1/de
Priority to EP82304148A priority patent/EP0072216B1/en
Publication of JPS5823479A publication Critical patent/JPS5823479A/ja
Publication of JPS6259896B2 publication Critical patent/JPS6259896B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/013—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10P34/42—
    • H10P95/90—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/091—Laser beam processing of fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
JP56122657A 1981-08-05 1981-08-05 半導体装置の製造方法 Granted JPS5823479A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56122657A JPS5823479A (ja) 1981-08-05 1981-08-05 半導体装置の製造方法
US06/405,269 US4468855A (en) 1981-08-05 1982-08-04 Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings
DE8282304148T DE3279614D1 (en) 1981-08-05 1982-08-05 The production of semiconductor devices by methods involving annealing
EP82304148A EP0072216B1 (en) 1981-08-05 1982-08-05 The production of semiconductor devices by methods involving annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56122657A JPS5823479A (ja) 1981-08-05 1981-08-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5823479A JPS5823479A (ja) 1983-02-12
JPS6259896B2 true JPS6259896B2 (enExample) 1987-12-14

Family

ID=14841395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122657A Granted JPS5823479A (ja) 1981-08-05 1981-08-05 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4468855A (enExample)
EP (1) EP0072216B1 (enExample)
JP (1) JPS5823479A (enExample)
DE (1) DE3279614D1 (enExample)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
DE3272410D1 (en) * 1981-02-16 1986-09-11 Fujitsu Ltd Method of producing mosfet type semiconductor device
CA1186070A (en) * 1983-06-17 1985-04-23 Iain D. Calder Laser activated polysilicon connections for redundancy
US4545823A (en) * 1983-11-14 1985-10-08 Hewlett-Packard Company Grain boundary confinement in silicon-on-insulator films
DE3342773A1 (de) * 1983-11-25 1985-06-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von spannungsfesten mos-feldeffekttransistoren mit weichen konzentrationsprofilen am drain-uebergang
US4727044A (en) * 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US4621411A (en) * 1984-09-28 1986-11-11 Texas Instruments Incorporated Laser-enhanced drive in of source and drain diffusions
US4749662A (en) * 1984-12-14 1988-06-07 Rockwell International Corporation Diffused field CMOS-bulk process
JPS62177909A (ja) * 1986-01-31 1987-08-04 Hitachi Ltd 半導体装置の製造方法
US6008078A (en) 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
JP2739149B2 (ja) * 1991-02-04 1998-04-08 株式会社 半導体エネルギー研究所 液晶表示装置
JP2717233B2 (ja) * 1991-03-06 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP2717234B2 (ja) * 1991-05-11 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JPH05267666A (ja) * 1991-08-23 1993-10-15 Semiconductor Energy Lab Co Ltd 半導体装置とその作製方法
JP2540688B2 (ja) * 1991-08-23 1996-10-09 株式会社半導体エネルギー研究所 半導体装置とその作製方法
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP3556679B2 (ja) 1992-05-29 2004-08-18 株式会社半導体エネルギー研究所 電気光学装置
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2717237B2 (ja) 1991-05-16 1998-02-18 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP3114963B2 (ja) * 1991-05-16 2000-12-04 株式会社半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JP2868168B2 (ja) * 1991-08-23 1999-03-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5650338A (en) * 1991-08-26 1997-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film transistor
US6849872B1 (en) * 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
JP2750380B2 (ja) * 1991-12-03 1998-05-13 株式会社 半導体エネルギー研究所 半導体装置の作製方法
JP3277533B2 (ja) * 1992-01-08 2002-04-22 ソニー株式会社 半導体装置の製造方法
US5485019A (en) 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2742747B2 (ja) * 1992-05-29 1998-04-22 株式会社半導体エネルギー研究所 薄膜トランジスタを有する多層半導体集積回路
JP3211377B2 (ja) * 1992-06-17 2001-09-25 ソニー株式会社 半導体装置の製造方法
JP3252990B2 (ja) * 1993-06-18 2002-02-04 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5576556A (en) * 1993-08-20 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device with gate metal oxide and sidewall spacer
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TW232751B (en) 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0766152A (ja) * 1993-08-30 1995-03-10 Sony Corp 半導体装置の製造方法
TW297142B (enExample) * 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US5719065A (en) 1993-10-01 1998-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with removable spacers
US5576231A (en) * 1993-11-05 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating an insulated gate field effect transistor with an anodic oxidized gate electrode
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
US6133620A (en) * 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
US6867432B1 (en) 1994-06-09 2005-03-15 Semiconductor Energy Lab Semiconductor device having SiOxNy gate insulating film
JP3330736B2 (ja) * 1994-07-14 2002-09-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3114964B2 (ja) * 1995-12-22 2000-12-04 株式会社半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置の作製方法
JPH08248445A (ja) * 1995-12-22 1996-09-27 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型電界効果半導体装置
JP2715282B2 (ja) * 1995-12-22 1998-02-18 株式会社半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP2652364B2 (ja) * 1995-12-22 1997-09-10 株式会社半導体エネルギー研究所 絶縁ゲイト型電界効果半導体装置およびその作製方法
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2652366B2 (ja) * 1996-04-17 1997-09-10 株式会社半導体エネルギー研究所 半導体装置とその作製方法
US6372592B1 (en) 1996-12-18 2002-04-16 United States Of America As Represented By The Secretary Of The Navy Self-aligned MOSFET with electrically active mask
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
US6245692B1 (en) * 1999-11-23 2001-06-12 Agere Systems Guardian Corp. Method to selectively heat semiconductor wafers
EP1139409A3 (en) * 2000-02-29 2003-01-02 Agere Systems Guardian Corporation Selective laser anneal on semiconductor material
KR100493382B1 (ko) * 2002-08-28 2005-06-07 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US11069813B2 (en) * 2019-09-30 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Localized heating in laser annealing process
US11244907B2 (en) 2020-01-02 2022-02-08 International Business Machines Corporation Metal surface preparation for increased alignment contrast

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120365A (enExample) * 1974-03-05 1975-09-20
US4243433A (en) * 1978-01-18 1981-01-06 Gibbons James F Forming controlled inset regions by ion implantation and laser bombardment
DE2837653A1 (de) * 1978-08-29 1980-04-17 Siemens Ag Verfahren zur lokal begrenzten erwaermung von festkoerpern
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
US4284659A (en) * 1980-05-12 1981-08-18 Bell Telephone Laboratories Insulation layer reflow
US4379727A (en) * 1981-07-08 1983-04-12 International Business Machines Corporation Method of laser annealing of subsurface ion implanted regions

Also Published As

Publication number Publication date
EP0072216A2 (en) 1983-02-16
US4468855A (en) 1984-09-04
DE3279614D1 (en) 1989-05-18
JPS5823479A (ja) 1983-02-12
EP0072216B1 (en) 1989-04-12
EP0072216A3 (en) 1985-12-18

Similar Documents

Publication Publication Date Title
JPS6259896B2 (enExample)
EP0058548B1 (en) Method of producing mosfet type semiconductor device
JP3277533B2 (ja) 半導体装置の製造方法
US3679492A (en) Process for making mosfet's
US20030207511A1 (en) Method of fabricating a MIS transistor
JPS61179578A (ja) 電界効果トランジスタの製作方法
US7271041B2 (en) Method for manufacturing thin film transistor
JPS63314862A (ja) 薄膜トランジスタの製造方法
JP3063207B2 (ja) 薄膜トランジスタの製造方法
KR100188090B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법
JPH0677155A (ja) 半導体基板の熱処理方法
JP3031398B2 (ja) Ｍｉｓトランジスタの作製方法
JPH03132041A (ja) 半導体装置の製造方法
JP3033579B2 (ja) 薄膜トランジスタの製法
JP3297770B2 (ja) 半導体装置の製造方法
JP3493160B2 (ja) 半導体装置の作製方法
KR100670389B1 (ko) 반도체 소자의 제조 방법
JP3370029B2 (ja) 半導体装置の作製方法
JPS63318125A (ja) 半導体装置の製造方法
JPH0336312B2 (enExample)
JP3387862B2 (ja) 半導体装置の作製方法
JPH06204249A (ja) Ｍｉｓトランジスタの作製方法
JPH0156523B2 (enExample)
JPH06204250A (ja) Ｍｉｓトランジスタの作製方法
JPH01287964A (ja) 半導体装置の製造方法