JPS6231487B2 - - Google Patents
Info
- Publication number
- JPS6231487B2 JPS6231487B2 JP13991776A JP13991776A JPS6231487B2 JP S6231487 B2 JPS6231487 B2 JP S6231487B2 JP 13991776 A JP13991776 A JP 13991776A JP 13991776 A JP13991776 A JP 13991776A JP S6231487 B2 JPS6231487 B2 JP S6231487B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- weight
- total amount
- electrode
- alloying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 61
- 238000005275 alloying Methods 0.000 description 20
- 229910017401 Au—Ge Inorganic materials 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 230000003746 surface roughness Effects 0.000 description 10
- 230000005496 eutectics Effects 0.000 description 8
- 238000001556 precipitation Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000001376 precipitating effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 229910002065 alloy metal Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13991776A JPS5364467A (en) | 1976-11-20 | 1976-11-20 | Electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13991776A JPS5364467A (en) | 1976-11-20 | 1976-11-20 | Electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5364467A JPS5364467A (en) | 1978-06-08 |
| JPS6231487B2 true JPS6231487B2 (enrdf_load_stackoverflow) | 1987-07-08 |
Family
ID=15256647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13991776A Granted JPS5364467A (en) | 1976-11-20 | 1976-11-20 | Electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5364467A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4301188A (en) * | 1979-10-01 | 1981-11-17 | Bell Telephone Laboratories, Incorporated | Process for producing contact to GaAs active region |
| JPS56116619A (en) * | 1980-02-20 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Electrode formation to gallium aluminum arsenic crystal |
| JPS5928376A (ja) * | 1982-08-09 | 1984-02-15 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
1976
- 1976-11-20 JP JP13991776A patent/JPS5364467A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5364467A (en) | 1978-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4186410A (en) | Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors | |
| JPH081896B2 (ja) | ガリウムヒ素への接触構造及びその製造方法 | |
| US5731224A (en) | Method for manufacturing ohmic contacts for compound semiconductors | |
| JP2893723B2 (ja) | オーミック電極の製造方法 | |
| JP2907452B2 (ja) | 化合物半導体用電極 | |
| US4942451A (en) | Semiconductor device having improved antireflection coating | |
| US6313534B1 (en) | Ohmic electrode, method and multi-layered structure for making same | |
| JPS6231487B2 (enrdf_load_stackoverflow) | ||
| US4613890A (en) | Alloyed contact for n-conducting GaAlAs-semi-conductor material | |
| US20210288159A1 (en) | Semiconductor device | |
| JPS6354231B2 (enrdf_load_stackoverflow) | ||
| JP2761735B2 (ja) | 耐熱性オーミック電極及び当該耐熱性オーミック電極の製造方法 | |
| JP3096133B2 (ja) | 化合物半導体装置 | |
| JP2599432B2 (ja) | オーミック電極の形成方法 | |
| JP2599433B2 (ja) | オーミック電極の形成方法 | |
| JPS60242619A (ja) | 半導体オ−ム性電極の形成方法 | |
| JPH0492471A (ja) | 半導体装置 | |
| JP2719678B2 (ja) | オーミック電極及びその形成方法 | |
| JPH0616502B2 (ja) | 半導体素子の製造方法 | |
| JPH0562928A (ja) | 化合物半導体装置及びその製造方法 | |
| JP2977378B2 (ja) | オーミック電極 | |
| JPH0131310B2 (enrdf_load_stackoverflow) | ||
| JPH029170A (ja) | オーミック電極 | |
| JPH0554269B2 (enrdf_load_stackoverflow) | ||
| JPS607175A (ja) | ３−５化合物半導体素子の電極構造 |