JPS6354231B2 - - Google Patents

Info

Publication number
JPS6354231B2
JPS6354231B2 JP56083995A JP8399581A JPS6354231B2 JP S6354231 B2 JPS6354231 B2 JP S6354231B2 JP 56083995 A JP56083995 A JP 56083995A JP 8399581 A JP8399581 A JP 8399581A JP S6354231 B2 JPS6354231 B2 JP S6354231B2
Authority
JP
Japan
Prior art keywords
layer
gaas
electron
doped
algaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56083995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57198661A (en
Inventor
Sukehisa Hyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56083995A priority Critical patent/JPS57198661A/ja
Publication of JPS57198661A publication Critical patent/JPS57198661A/ja
Publication of JPS6354231B2 publication Critical patent/JPS6354231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56083995A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57198661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083995A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083995A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57198661A JPS57198661A (en) 1982-12-06
JPS6354231B2 true JPS6354231B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=13818109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083995A Granted JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198661A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 化合物半導体装置の製造方法
JPS6149476A (ja) * 1984-08-17 1986-03-11 Sony Corp 電界効果トランジスタ
KR900001394B1 (en) * 1985-04-05 1990-03-09 Fujitsu Ltd Super high frequency intergrated circuit device
JPS61253869A (ja) * 1985-05-02 1986-11-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH01143271A (ja) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd ヘテロ接合型電界効果トランジスタ
JP2655490B2 (ja) * 1994-10-28 1997-09-17 日本電気株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57198661A (en) 1982-12-06

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