JPS57198661A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57198661A
JPS57198661A JP56083995A JP8399581A JPS57198661A JP S57198661 A JPS57198661 A JP S57198661A JP 56083995 A JP56083995 A JP 56083995A JP 8399581 A JP8399581 A JP 8399581A JP S57198661 A JPS57198661 A JP S57198661A
Authority
JP
Japan
Prior art keywords
layer
gaas
doped
highly resistive
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56083995A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354231B2 (enrdf_load_stackoverflow
Inventor
Sukehisa Hiyamizu
Toshio Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56083995A priority Critical patent/JPS57198661A/ja
Publication of JPS57198661A publication Critical patent/JPS57198661A/ja
Publication of JPS6354231B2 publication Critical patent/JPS6354231B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56083995A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57198661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083995A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083995A JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57198661A true JPS57198661A (en) 1982-12-06
JPS6354231B2 JPS6354231B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=13818109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083995A Granted JPS57198661A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57198661A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 化合物半導体装置の製造方法
JPS6149476A (ja) * 1984-08-17 1986-03-11 Sony Corp 電界効果トランジスタ
JPS61253869A (ja) * 1985-05-02 1986-11-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPS6230360A (ja) * 1985-04-05 1987-02-09 Fujitsu Ltd 超高周波集積回路装置
JPH01143271A (ja) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd ヘテロ接合型電界効果トランジスタ
JPH08124943A (ja) * 1994-10-28 1996-05-17 Nec Corp 半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59123271A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 化合物半導体装置の製造方法
JPS6149476A (ja) * 1984-08-17 1986-03-11 Sony Corp 電界効果トランジスタ
JPS6230360A (ja) * 1985-04-05 1987-02-09 Fujitsu Ltd 超高周波集積回路装置
JPS61253869A (ja) * 1985-05-02 1986-11-11 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JPH01143271A (ja) * 1987-11-27 1989-06-05 Matsushita Electric Ind Co Ltd ヘテロ接合型電界効果トランジスタ
JPH08124943A (ja) * 1994-10-28 1996-05-17 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6354231B2 (enrdf_load_stackoverflow) 1988-10-27

Similar Documents

Publication Publication Date Title
US5677553A (en) Semiconductor device strucutre having a two-dimensional electron gas and contact thereto
JPS6482676A (en) Iii-v compound semiconductor field-effect transistor and manufacture thereof
GB1413058A (en) Semoconductor devices
US5397907A (en) Field effect transistor and fabricating method thereof
JPS57198661A (en) Semiconductor device
JPS5646562A (en) Semiconductor device
JPS57112079A (en) Field-effect semiconductor device
CA1271850A (en) Method for fabricating a field-effect transistor with a self-aligned gate
JPH06120258A (ja) 高電子移動度トランジスタ
JPS57193069A (en) Semiconductor device
JPS5752174A (en) Multigate field effect transistor
JPS57193068A (en) Semiconductor device
JPS57208174A (en) Semiconductor device
JPS57198664A (en) Semiconductor device
JPS60251671A (ja) 電界効果形トランジスタおよびその製造方法
KR890003416B1 (ko) 반도체 장치 및 그의 제조방법
JPS5636170A (en) Manufacture of field-effect semiconductor device
JPS5671980A (en) Schottky barrier gate type field effect transistor and preparation method thereof
JPS5724569A (en) Uhf band gaas fet
JPS57211275A (en) Manufacture of schottky barrier gate type field-effect transistor
JPS55120168A (en) Field effect type semiconductor device
JPS57145377A (en) Manufacture of schottky barrier type field effect transistor
JPS5739584A (en) Semiconductor device and manufacture thereof
JPS62113479A (ja) 電界効果半導体装置の製造方法
JPS6482569A (en) Field-effect transistor and manufacture thereof