JPH0131310B2 - - Google Patents
Info
- Publication number
- JPH0131310B2 JPH0131310B2 JP4244778A JP4244778A JPH0131310B2 JP H0131310 B2 JPH0131310 B2 JP H0131310B2 JP 4244778 A JP4244778 A JP 4244778A JP 4244778 A JP4244778 A JP 4244778A JP H0131310 B2 JPH0131310 B2 JP H0131310B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- gaas
- ohmic
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4244778A JPS54134558A (en) | 1978-04-10 | 1978-04-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4244778A JPS54134558A (en) | 1978-04-10 | 1978-04-10 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54134558A JPS54134558A (en) | 1979-10-19 |
JPH0131310B2 true JPH0131310B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Family
ID=12636320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4244778A Granted JPS54134558A (en) | 1978-04-10 | 1978-04-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54134558A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5950213B2 (ja) * | 1979-04-27 | 1984-12-07 | 三菱電機株式会社 | N形砒化ガリウムのオ−ム性電極およびその形成方法 |
-
1978
- 1978-04-10 JP JP4244778A patent/JPS54134558A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54134558A (en) | 1979-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6140703A (en) | Semiconductor metallization structure | |
JP3705016B2 (ja) | 透光性電極用膜及びiii族窒化物系化合物半導体素子 | |
US6809352B2 (en) | Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices | |
US5731224A (en) | Method for manufacturing ohmic contacts for compound semiconductors | |
US4695869A (en) | GAAS semiconductor device | |
US3239376A (en) | Electrodes to semiconductor wafers | |
JPH0516189B2 (enrdf_load_stackoverflow) | ||
US3537174A (en) | Process for forming tungsten barrier electrical connection | |
JPH0131310B2 (enrdf_load_stackoverflow) | ||
JP2950285B2 (ja) | 半導体素子及びその電極の形成方法 | |
JPS5923474B2 (ja) | 半導体装置 | |
JP3096133B2 (ja) | 化合物半導体装置 | |
JP2599432B2 (ja) | オーミック電極の形成方法 | |
JP3823826B2 (ja) | 半導体素子の製造方法 | |
JPH04239176A (ja) | ショットキ障壁を有する半導体装置 | |
JP2599433B2 (ja) | オーミック電極の形成方法 | |
JPH01166556A (ja) | n型GaAsオーム性電極およびその形成方法 | |
JPS6231487B2 (enrdf_load_stackoverflow) | ||
US3401316A (en) | Semiconductor device utilizing an aual2 layer as a diffusion barrier that prevents "purple plague" | |
JP2002261044A (ja) | 半導体装置の製造方法および半導体装置 | |
JPH04109674A (ja) | 化合物半導体装置 | |
JPH07115185A (ja) | 半導体の電極 | |
JPS5966166A (ja) | N形3−5族化合物半導体のオ−ム性電極 | |
JPH0246773A (ja) | 化合物半導体装置およびその電極形成方法 | |
JPS6252962A (ja) | 半導体装置 |