JPS62297837A - 熱安定性の高い多層レジスト・マスクの形成方法 - Google Patents

熱安定性の高い多層レジスト・マスクの形成方法

Info

Publication number
JPS62297837A
JPS62297837A JP62093427A JP9342787A JPS62297837A JP S62297837 A JPS62297837 A JP S62297837A JP 62093427 A JP62093427 A JP 62093427A JP 9342787 A JP9342787 A JP 9342787A JP S62297837 A JPS62297837 A JP S62297837A
Authority
JP
Japan
Prior art keywords
resist
halogen
alkyl
aryl
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62093427A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456977B2 (enExample
Inventor
バーン・ジェング・リン
ビー−ジェーン・リン・ヤング
ジャー−ミン・ヤング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS62297837A publication Critical patent/JPS62297837A/ja
Publication of JPH0456977B2 publication Critical patent/JPH0456977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP62093427A 1986-06-10 1987-04-17 熱安定性の高い多層レジスト・マスクの形成方法 Granted JPS62297837A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/872,584 US4737425A (en) 1986-06-10 1986-06-10 Patterned resist and process
US872584 2001-06-01

Publications (2)

Publication Number Publication Date
JPS62297837A true JPS62297837A (ja) 1987-12-25
JPH0456977B2 JPH0456977B2 (enExample) 1992-09-10

Family

ID=25359899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62093427A Granted JPS62297837A (ja) 1986-06-10 1987-04-17 熱安定性の高い多層レジスト・マスクの形成方法

Country Status (4)

Country Link
US (1) US4737425A (enExample)
EP (1) EP0249769B1 (enExample)
JP (1) JPS62297837A (enExample)
DE (1) DE3764032D1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431156A (en) * 1987-07-27 1989-02-01 Hitachi Ltd Pattern forming method
JPH0210362A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JPH02291562A (ja) * 1989-03-17 1990-12-03 Internatl Business Mach Corp <Ibm> フオトレジスト像の処理方法
JPH08190204A (ja) * 1994-11-11 1996-07-23 Nec Corp シリル化用感光性組成物及び微細パターン形成方法

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
JP2666985B2 (ja) * 1988-10-27 1997-10-22 株式会社シャンソン化粧品本舗 化粧料充填用容器
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem
US5234794A (en) * 1989-04-24 1993-08-10 Siemens Aktiengesellschaft Photostructuring method
US5275920A (en) * 1989-04-24 1994-01-04 Siemens Aktiengesellschaft Method of dry development utilizing quinone diazide and basic polymer resist with latent image intensification through treatment with silicon-organic compound in water
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
US4968552A (en) * 1989-10-13 1990-11-06 International Business Machines Corp. Versatile reactive ion etch barriers from polyamic acid salts
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
DE59010396D1 (de) * 1990-04-27 1996-08-01 Siemens Ag Verfahren zur Erzeugung einer Resiststruktur
US5260172A (en) * 1991-12-17 1993-11-09 International Business Machines Corporation Multilayer photoresist comprising poly-(vinylbenzoic acid) as a planarizing layer
US5550007A (en) * 1993-05-28 1996-08-27 Lucent Technologies Inc. Surface-imaging technique for lithographic processes for device fabrication
US6136511A (en) * 1999-01-20 2000-10-24 Micron Technology, Inc. Method of patterning substrates using multilayer resist processing
EP1054296A3 (en) * 1999-04-30 2002-03-06 Fuji Photo Film Co., Ltd. Fine pattern forming method
US6420364B1 (en) * 1999-09-13 2002-07-16 Boehringer Ingelheim Pharmaceuticals, Inc. Compound useful as reversible inhibitors of cysteine proteases
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
JP4511786B2 (ja) 2000-07-16 2010-07-28 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 基板とこの基板から離れたテンプレートを整列させる方法
CN1262883C (zh) 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
KR20030040378A (ko) * 2000-08-01 2003-05-22 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피를 위한 투명한 템플릿과 기판사이의고정확성 갭 및 방향설정 감지 방법
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
EP2306242A3 (en) 2000-10-12 2011-11-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US6951173B1 (en) 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
JP4361434B2 (ja) * 2003-08-29 2009-11-11 富士フイルム株式会社 マスク及びマスクの作製方法、並びに、材料の加工方法
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20050136648A1 (en) * 2003-12-23 2005-06-23 Mariah Sharma Method and system for forming a contact in a thin-film device
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
KR100618851B1 (ko) * 2004-04-08 2006-09-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴 형성용 코팅 조성물 제조 방법 및 반도체 소자의제조 방법
US7314691B2 (en) * 2004-04-08 2008-01-01 Samsung Electronics Co., Ltd. Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device
US7371509B2 (en) * 2004-05-07 2008-05-13 Micron Technology, Inc. Resist pattern and reflow technology
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
WO2006002479A1 (en) * 2004-07-05 2006-01-12 U.S. Filter Wastewater Group, Inc. Hydrophilic membranes
US7105452B2 (en) * 2004-08-13 2006-09-12 Molecular Imprints, Inc. Method of planarizing a semiconductor substrate with an etching chemistry
KR100618864B1 (ko) * 2004-09-23 2006-08-31 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
US7244386B2 (en) 2004-09-27 2007-07-17 Molecular Imprints, Inc. Method of compensating for a volumetric shrinkage of a material disposed upon a substrate to form a substantially planar structure therefrom
US7357876B2 (en) * 2004-12-01 2008-04-15 Molecular Imprints, Inc. Eliminating printability of sub-resolution defects in imprint lithography
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7906058B2 (en) * 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
US7803308B2 (en) * 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7670530B2 (en) * 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
CN101535021A (zh) * 2005-12-08 2009-09-16 分子制模股份有限公司 用于衬底双面图案形成的方法和系统
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
WO2007117524A2 (en) * 2006-04-03 2007-10-18 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and alignment marks
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US7547398B2 (en) * 2006-04-18 2009-06-16 Molecular Imprints, Inc. Self-aligned process for fabricating imprint templates containing variously etched features
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
KR20090034976A (ko) * 2006-07-14 2009-04-08 지멘스 워터 테크놀로지스 코포레이션 막의 개선된 모노퍼술페이트 처리 방법
WO2011079062A1 (en) * 2009-12-21 2011-06-30 Siemens Industry, Inc. Charged porous polymeric membranes and their preparation
EP2472327A1 (en) * 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Photoresists and methods for use thereof
KR20150054918A (ko) 2012-09-14 2015-05-20 에보쿠아 워터 테크놀로지스 엘엘씨 막을 위한 중합체 블렌드
US20150024522A1 (en) * 2013-07-22 2015-01-22 Rohm And Haas Electronic Materials Llc Organometal materials and process
WO2017011068A1 (en) 2015-07-14 2017-01-19 Evoqua Water Technologies Llc Aeration device for filtration system
GB201517273D0 (en) * 2015-09-30 2015-11-11 Univ Manchester Resist composition
TWI856141B (zh) * 2019-07-22 2024-09-21 美商英培雅股份有限公司 有機金屬型金屬硫族化物簇及微影之應用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844715A (ja) * 1981-09-11 1983-03-15 Fujitsu Ltd 微細パタ−ン形成方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61218133A (ja) * 1985-03-19 1986-09-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体デバイスのパタ−ン形成方法
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1225754A (enExample) * 1967-06-09 1971-03-24
JPS494851B1 (enExample) * 1968-04-26 1974-02-04
BE793490A (fr) * 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
JPS507719A (enExample) * 1973-05-23 1975-01-27
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process
US4007047A (en) * 1974-06-06 1977-02-08 International Business Machines Corporation Modified processing of positive photoresists
JPS5143125A (ja) * 1974-10-09 1976-04-13 Fuji Photo Film Co Ltd Kankoseifukushazairyo
US3984582A (en) * 1975-06-30 1976-10-05 Ibm Method for preparing positive resist image
US4125650A (en) * 1977-08-08 1978-11-14 International Business Machines Corporation Resist image hardening process
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4180604A (en) * 1977-12-30 1979-12-25 International Business Machines Corporation Two layer resist system
US4289573A (en) * 1979-03-30 1981-09-15 International Business Machines Corporation Process for forming microcircuits
JPS56129214A (en) * 1980-03-15 1981-10-09 Matsushita Electric Works Ltd Production of high-molecular compound
US4307178A (en) * 1980-04-30 1981-12-22 International Business Machines Corporation Plasma develoment of resists
JPS57139585A (en) * 1981-02-13 1982-08-28 Kao Corp Color concentrating agent
US4396704A (en) * 1981-04-22 1983-08-02 Bell Telephone Laboratories, Incorporated Solid state devices produced by organometallic plasma developed resists
DE3133350A1 (de) * 1981-08-22 1983-03-10 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von maskierungsschichten auf einer zu strukturierenden flaeche eines festkoerpers"
EP0091651B1 (en) * 1982-04-12 1988-08-03 Nippon Telegraph And Telephone Corporation Method for forming micropattern
US4493855A (en) * 1982-12-23 1985-01-15 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4489200A (en) * 1983-04-11 1984-12-18 General Electric Company One-component RTV silicone rubber compositions with good self-bonding properties to acrylate plastics
JPS59202636A (ja) * 1983-05-04 1984-11-16 Hitachi Ltd 微細パタ−ン形成方法
US4430153A (en) * 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
CA1248402A (en) * 1983-09-16 1989-01-10 Larry E. Stillwagon Method of making articles using gas functionalized plasma developed layer
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
GB2152223B (en) * 1983-11-28 1987-01-14 Fusion Semiconductor Systems Process for imaging resist materials
GB8403698D0 (en) * 1984-02-13 1984-03-14 British Telecomm Semiconductor device fabrication
US4521274A (en) * 1984-05-24 1985-06-04 At&T Bell Laboratories Bilevel resist
GB8427149D0 (en) * 1984-10-26 1984-12-05 Ucb Sa Resist materials
GB2170015A (en) * 1985-01-11 1986-07-23 Philips Electronic Associated Method of manufacturing a semiconductor device
US4551418A (en) * 1985-02-19 1985-11-05 International Business Machines Corporation Process for preparing negative relief images with cationic photopolymerization
US4613398A (en) * 1985-06-06 1986-09-23 International Business Machines Corporation Formation of etch-resistant resists through preferential permeation
EP0244572B1 (en) * 1986-04-24 1990-09-05 International Business Machines Corporation Capped two-layer resist process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844715A (ja) * 1981-09-11 1983-03-15 Fujitsu Ltd 微細パタ−ン形成方法
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61218133A (ja) * 1985-03-19 1986-09-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体デバイスのパタ−ン形成方法
JPS61219034A (ja) * 1985-03-19 1986-09-29 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 耐プラズマ性重合体物質の製法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431156A (en) * 1987-07-27 1989-02-01 Hitachi Ltd Pattern forming method
JPH0210362A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 微細パターン形成方法
JPH02291562A (ja) * 1989-03-17 1990-12-03 Internatl Business Mach Corp <Ibm> フオトレジスト像の処理方法
JPH08190204A (ja) * 1994-11-11 1996-07-23 Nec Corp シリル化用感光性組成物及び微細パターン形成方法

Also Published As

Publication number Publication date
JPH0456977B2 (enExample) 1992-09-10
DE3764032D1 (de) 1990-09-06
EP0249769B1 (en) 1990-08-01
EP0249769A2 (en) 1987-12-23
US4737425A (en) 1988-04-12
EP0249769A3 (en) 1988-09-28

Similar Documents

Publication Publication Date Title
JPS62297837A (ja) 熱安定性の高い多層レジスト・マスクの形成方法
CN100426140C (zh) 用于旋涂抗反射涂层/硬掩膜材料的含硅组合物
US5457003A (en) Negative working resist material, method for the production of the same and process of forming resist patterns using the same
JP2694097B2 (ja) 反射防止コーティング組成物
JP5220418B2 (ja) シリコン含有フォトレジストの基層としての低屈折率ポリマー
US7807332B2 (en) Underlayer compositions containing heterocyclic aromatic structures
JPS61219034A (ja) 耐プラズマ性重合体物質の製法
JPS6014238A (ja) 基板上に多重層レジストを形成する方法
KR100581450B1 (ko) 심자외선포토리소그래피프로세스
JP2001066767A (ja) レジスト組成物およびその使用
US4806453A (en) Positive acting bilayer photoresist development
KR940007795B1 (ko) 내식막 재료, 이의 제조방법 및 이러한 내식막 재료를 사용하여 내식막 패턴을 형성하는 방법
JPH04338958A (ja) レジスト材料、その製造方法およびこれを用いたパターン形成方法
US4801518A (en) Method of forming a photoresist pattern
JPH05158235A (ja) レジスト組成物とレジストパターンの形成方法
JP2663815B2 (ja) レジストパターン形成方法
JPS6364772B2 (enExample)
JP2648004B2 (ja) エッチング耐性パターン形成方法
JPH09115810A (ja) 半導体集積回路装置の製造方法
JPH02156244A (ja) パターン形成方法
JP3001606B2 (ja) フオトレジスト構造の縮小方法
JPH09115806A (ja) 半導体集積回路装置の製造方法
JPS61136228A (ja) フオトリソグラフ方法
JPS61241745A (ja) ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法
JPH0786141A (ja) パターン形成方法