JPS6224937B2 - - Google Patents
Info
- Publication number
- JPS6224937B2 JPS6224937B2 JP56175204A JP17520481A JPS6224937B2 JP S6224937 B2 JPS6224937 B2 JP S6224937B2 JP 56175204 A JP56175204 A JP 56175204A JP 17520481 A JP17520481 A JP 17520481A JP S6224937 B2 JPS6224937 B2 JP S6224937B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- baskets
- basket
- furnace
- insertion stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000003780 insertion Methods 0.000 claims description 15
- 230000037431 insertion Effects 0.000 claims description 15
- 235000012431 wafers Nutrition 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 9
- 230000007723 transport mechanism Effects 0.000 claims description 9
- 230000032258 transport Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000010453 quartz Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17520481A JPS5875840A (ja) | 1981-10-30 | 1981-10-30 | 半導体用加熱処理炉 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17520481A JPS5875840A (ja) | 1981-10-30 | 1981-10-30 | 半導体用加熱処理炉 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5875840A JPS5875840A (ja) | 1983-05-07 |
| JPS6224937B2 true JPS6224937B2 (xx) | 1987-05-30 |
Family
ID=15992109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17520481A Granted JPS5875840A (ja) | 1981-10-30 | 1981-10-30 | 半導体用加熱処理炉 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5875840A (xx) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61111524A (ja) * | 1984-11-06 | 1986-05-29 | Denkoo:Kk | 縦形半導体熱処理炉 |
| JPS61191015A (ja) * | 1985-02-20 | 1986-08-25 | Hitachi Ltd | 半導体の気相成長方法及びその装置 |
| JPH0447956Y2 (xx) * | 1985-04-16 | 1992-11-12 | ||
| JPS62122123A (ja) * | 1985-11-21 | 1987-06-03 | Toshiba Corp | 縦型熱処理装置 |
| JPH0294627A (ja) * | 1988-09-30 | 1990-04-05 | Tel Sagami Ltd | 熱処理方法 |
| JP2905857B2 (ja) * | 1989-08-11 | 1999-06-14 | 東京エレクトロン株式会社 | 縦型処理装置 |
| JP2004103990A (ja) | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265662A (en) * | 1975-11-26 | 1977-05-31 | Nippon Denso Co Ltd | Method and device for diffusion to semiconductor substrate by high fre quency induction heating |
| JPS55118631A (en) * | 1979-03-07 | 1980-09-11 | Fujitsu Ltd | Diffusion furnace for treatment of semiconductor wafer |
-
1981
- 1981-10-30 JP JP17520481A patent/JPS5875840A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265662A (en) * | 1975-11-26 | 1977-05-31 | Nippon Denso Co Ltd | Method and device for diffusion to semiconductor substrate by high fre quency induction heating |
| JPS55118631A (en) * | 1979-03-07 | 1980-09-11 | Fujitsu Ltd | Diffusion furnace for treatment of semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5875840A (ja) | 1983-05-07 |
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