JP4358690B2 - 縦型熱処理装置及びその運用方法 - Google Patents
縦型熱処理装置及びその運用方法 Download PDFInfo
- Publication number
- JP4358690B2 JP4358690B2 JP2004192490A JP2004192490A JP4358690B2 JP 4358690 B2 JP4358690 B2 JP 4358690B2 JP 2004192490 A JP2004192490 A JP 2004192490A JP 2004192490 A JP2004192490 A JP 2004192490A JP 4358690 B2 JP4358690 B2 JP 4358690B2
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- processed
- boat
- dummy
- storage unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010438 heat treatment Methods 0.000 title claims description 108
- 238000000034 method Methods 0.000 title claims description 53
- 238000003860 storage Methods 0.000 claims description 109
- 238000005192 partition Methods 0.000 claims description 21
- 230000003028 elevating effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 74
- 238000010923 batch production Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
- Y10S414/138—Wafers positioned vertically within cassette
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
wb 処理済の半導体ウエハ
dw ダミーウエハ(ダミー被処理体)
1 縦型熱処理装置
2 ボート
3a 炉口
3 熱処理炉
4 蓋体
5 昇降機構
6 移載室
7 運搬容器
8 接続口
10 第1収納部
11 第2収納部
12 移載機構
21a,21b ダミー用収納部
Claims (2)
- 被処理体を上下方向に多段に搭載したボートを下方の炉口から収容して熱処理する熱処理炉と、該熱処理炉の炉口を塞ぐ蓋体上に前記ボートを支持して熱処理炉内への搬入搬出を行う昇降機構と、熱処理炉の炉口に接続された移載室の前部に設けられ、被処理体を収容した運搬容器を移載室内に臨ませて接続するための接続口と、前記移載室内に設置され、次の熱処理用の被処理体を一時的に収納しておくための第1収納部及び、熱処理炉から搬出された処理済の被処理体を一時的に収納しておくための第2収納部と、前記運搬容器、第1収納部、第2収納部及びボート間で被処理体の移載を行う移載機構とを備え、前記第1収納部及び第2収納部は、天板、仕切板及び底板のそれぞれ間に複数本の支柱を立設し、該支柱に被処理体を所定間隔で保持する保持部を設けてなり、天板と仕切板の間が第1収納部又は第2収納部とされ、仕切板と底板の間がダミー被処理体を一時的に収納しておくためのダミー用収納部とされていることを特徴とする縦型熱処理装置。
- 被処理体を上下方向に多段に搭載したボートを下方の炉口から収容して熱処理する熱処理炉と、該熱処理炉の炉口を塞ぐ蓋体上に前記ボートを支持して熱処理炉内への搬入搬出を行う昇降機構と、熱処理炉の炉口に接続された移載室の前部に設けられ、被処理体を収容した運搬容器を移載室内に臨ませて接続するための接続口と、前記移載室内に設置され、次の熱処理用の被処理体を一時的に収納しておくための第1収納部及び、熱処理炉から搬出された処理済の被処理体を一時的に収納しておくための第2収納部と、ダミー被処理体を一時的に収納しておくためのダミー用収納部と、前記運搬容器、第1収納部、第2収納部、ダミー収納部及びボート間で被処理体又はダミー被処理体の移載を行う移載機構とを備え、前記第1収納部及び第2収納部は、天板、仕切板及び底板のそれぞれ間に複数本の支柱を立設し、該支柱に被処理体を所定間隔で保持する保持部を設けてなり、天板と仕切板の間が第1収納部又は第2収納部とされ、仕切板と底板の間がダミー被処理体を一時的に収納しておくためのダミー用収納部とされている縦型熱処理装置の運用方法であって、運搬容器からボートに被処理体を移載し、更にダミー収納部からボートにダミー被処理体を移載した後に該ボートを熱処理炉内に搬入して熱処理する初回の熱処理工程と、該熱処理工程中に次の運搬容器から第1収納部に被処理体を移載する第1移載工程と、前記熱処理後に熱処理炉から搬出されたボートから第2収納部に処理済の被処理体を移載し、更にボートからダミー用収納部にダミー被処理体を移載する第2移載工程と、該第2移載工程後に第1収納部からボートに被処理体を移載し、更にダミー収納部からボートにダミー被処理体を移載する第3移載工程と、該第3移載工程後にボートを熱処理炉内に搬入して熱処理する2回目以降の熱処理工程と、該熱処理工程中に第2収納部から運搬容器に処理済の被処理体を移載する第4移載工程とを備えたことを特徴とする縦型熱処理装置の運用方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004192490A JP4358690B2 (ja) | 2004-06-30 | 2004-06-30 | 縦型熱処理装置及びその運用方法 |
KR1020067022019A KR100961583B1 (ko) | 2004-06-30 | 2005-06-20 | 종형 열처리 장치 및 그 운용 방법 |
US11/630,146 US7416405B2 (en) | 2004-06-30 | 2005-06-20 | Vertical type of thermal processing apparatus and method of using the same |
EP05751088A EP1780775A4 (en) | 2004-06-30 | 2005-06-20 | DEVICE FOR VERTICAL HEAT TREATMENT AND METHOD FOR OPERATING THE SAME |
PCT/JP2005/011235 WO2006003805A1 (ja) | 2004-06-30 | 2005-06-20 | 縦型熱処理装置及びその運用方法 |
CNB200580022267XA CN100474516C (zh) | 2004-06-30 | 2005-06-20 | 立式热处理装置的运用方法 |
TW094121727A TWI433205B (zh) | 2004-06-30 | 2005-06-28 | Vertical type heat treatment device and its application method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004192490A JP4358690B2 (ja) | 2004-06-30 | 2004-06-30 | 縦型熱処理装置及びその運用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006019320A JP2006019320A (ja) | 2006-01-19 |
JP4358690B2 true JP4358690B2 (ja) | 2009-11-04 |
Family
ID=35782616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004192490A Expired - Fee Related JP4358690B2 (ja) | 2004-06-30 | 2004-06-30 | 縦型熱処理装置及びその運用方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7416405B2 (ja) |
EP (1) | EP1780775A4 (ja) |
JP (1) | JP4358690B2 (ja) |
KR (1) | KR100961583B1 (ja) |
CN (1) | CN100474516C (ja) |
TW (1) | TWI433205B (ja) |
WO (1) | WO2006003805A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8190277B2 (en) * | 2007-11-30 | 2012-05-29 | Tokyo Electron Limited | Method for limiting expansion of earthquake damage and system for limiting expansion of earthquake damage for use in semiconductor manufacturing apparatus |
JP5433290B2 (ja) * | 2009-04-20 | 2014-03-05 | 東京エレクトロン株式会社 | 基板収納方法及び制御装置 |
KR102401606B1 (ko) * | 2015-07-18 | 2022-05-23 | 안범주 | 반도체 프로세싱을 위한 수직 적층형 다중 챔버 |
JP7091227B2 (ja) * | 2018-11-05 | 2022-06-27 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
CN112414107B (zh) * | 2020-11-04 | 2023-01-17 | 北京北方华创微电子装备有限公司 | 立式热处理设备及其炉体装卸方法和转运装置 |
CN117276159A (zh) * | 2023-11-17 | 2023-12-22 | 合肥晶合集成电路股份有限公司 | 晶圆运送系统 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4770590A (en) | 1986-05-16 | 1988-09-13 | Silicon Valley Group, Inc. | Method and apparatus for transferring wafers between cassettes and a boat |
US5055036A (en) * | 1991-02-26 | 1991-10-08 | Tokyo Electron Sagami Limited | Method of loading and unloading wafer boat |
JP3234617B2 (ja) * | 1991-12-16 | 2001-12-04 | 東京エレクトロン株式会社 | 熱処理装置用基板支持具 |
US5565034A (en) * | 1993-10-29 | 1996-10-15 | Tokyo Electron Limited | Apparatus for processing substrates having a film formed on a surface of the substrate |
JP3478364B2 (ja) * | 1995-06-15 | 2003-12-15 | 株式会社日立国際電気 | 半導体製造装置 |
US5829969A (en) * | 1996-04-19 | 1998-11-03 | Tokyo Electron Ltd. | Vertical heat treating apparatus |
US5947718A (en) * | 1997-03-07 | 1999-09-07 | Semitool, Inc. | Semiconductor processing furnace |
JPH10321703A (ja) | 1997-05-16 | 1998-12-04 | Kokusai Electric Co Ltd | 半導体製造装置 |
JP2000068218A (ja) * | 1998-08-22 | 2000-03-03 | Tokyo Electron Ltd | 熱処理装置 |
JP3664897B2 (ja) | 1998-11-18 | 2005-06-29 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
JP2002289666A (ja) * | 2001-03-27 | 2002-10-04 | Tokyo Electron Ltd | 熱処理装置 |
JP2003077974A (ja) * | 2001-08-31 | 2003-03-14 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
-
2004
- 2004-06-30 JP JP2004192490A patent/JP4358690B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-20 KR KR1020067022019A patent/KR100961583B1/ko active IP Right Grant
- 2005-06-20 EP EP05751088A patent/EP1780775A4/en not_active Withdrawn
- 2005-06-20 US US11/630,146 patent/US7416405B2/en active Active
- 2005-06-20 CN CNB200580022267XA patent/CN100474516C/zh not_active Expired - Fee Related
- 2005-06-20 WO PCT/JP2005/011235 patent/WO2006003805A1/ja active Application Filing
- 2005-06-28 TW TW094121727A patent/TWI433205B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2006003805A1 (ja) | 2006-01-12 |
US7416405B2 (en) | 2008-08-26 |
EP1780775A4 (en) | 2009-03-11 |
CN100474516C (zh) | 2009-04-01 |
KR100961583B1 (ko) | 2010-06-07 |
JP2006019320A (ja) | 2006-01-19 |
TW200610009A (en) | 2006-03-16 |
US20070231763A1 (en) | 2007-10-04 |
CN1981366A (zh) | 2007-06-13 |
EP1780775A1 (en) | 2007-05-02 |
KR20070024517A (ko) | 2007-03-02 |
TWI433205B (zh) | 2014-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6327794B2 (en) | Processing method for substrate | |
JP3258748B2 (ja) | 熱処理装置 | |
US20020197145A1 (en) | Substrate processing apparatus and a method for fabricating a semiconductor device by using same | |
TW200849453A (en) | Substrate processing apparatus, substrate processing method and computer readable storage medium | |
JP4342745B2 (ja) | 基板処理方法および半導体装置の製造方法 | |
JP2003124284A (ja) | 基板処理装置および半導体装置の製造方法 | |
JPH07297257A (ja) | 処理装置 | |
KR100961583B1 (ko) | 종형 열처리 장치 및 그 운용 방법 | |
JP4778546B2 (ja) | 半導体製造装置における地震被害拡散低減方法及び地震被害拡散低減システム | |
JP2002246432A (ja) | 基板処理装置 | |
JP2012209282A (ja) | ローディングユニット及び処理システム | |
JP2001284276A (ja) | 基板処理装置 | |
JP4838293B2 (ja) | 基板処理方法、半導体装置の製造方法および基板処理装置 | |
JP4383636B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
JP2995479B2 (ja) | 縦型熱処理装置における基板の移載方法 | |
JP6000038B2 (ja) | スペーサ、スペーサの搬送容器、スペーサの搬送方法、処理方法、及び、処理装置 | |
JP3176153B2 (ja) | 半導体製造装置 | |
JP4456727B2 (ja) | 半導体装置の製造方法および基板処理装置 | |
JP2004023032A (ja) | 半導体製造装置 | |
JP2002246436A (ja) | 基板処理装置 | |
JP2002246445A (ja) | 基板処理装置 | |
JP2001284278A (ja) | 基板処理装置および基板処理方法 | |
JP2002043389A (ja) | 基板処理装置 | |
JP2007242764A (ja) | 基板処理装置 | |
TW201131684A (en) | Substrate processing apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090519 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090616 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20090616 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090708 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090804 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120814 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4358690 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120814 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150814 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |