JPS6224937B2 - - Google Patents

Info

Publication number
JPS6224937B2
JPS6224937B2 JP56175204A JP17520481A JPS6224937B2 JP S6224937 B2 JPS6224937 B2 JP S6224937B2 JP 56175204 A JP56175204 A JP 56175204A JP 17520481 A JP17520481 A JP 17520481A JP S6224937 B2 JPS6224937 B2 JP S6224937B2
Authority
JP
Japan
Prior art keywords
heat treatment
baskets
basket
furnace
insertion stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56175204A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5875840A (ja
Inventor
Haruo Shimoda
Yasuo Uoochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17520481A priority Critical patent/JPS5875840A/ja
Publication of JPS5875840A publication Critical patent/JPS5875840A/ja
Publication of JPS6224937B2 publication Critical patent/JPS6224937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP17520481A 1981-10-30 1981-10-30 半導体用加熱処理炉 Granted JPS5875840A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17520481A JPS5875840A (ja) 1981-10-30 1981-10-30 半導体用加熱処理炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17520481A JPS5875840A (ja) 1981-10-30 1981-10-30 半導体用加熱処理炉

Publications (2)

Publication Number Publication Date
JPS5875840A JPS5875840A (ja) 1983-05-07
JPS6224937B2 true JPS6224937B2 (en, 2012) 1987-05-30

Family

ID=15992109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17520481A Granted JPS5875840A (ja) 1981-10-30 1981-10-30 半導体用加熱処理炉

Country Status (1)

Country Link
JP (1) JPS5875840A (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61111524A (ja) * 1984-11-06 1986-05-29 Denkoo:Kk 縦形半導体熱処理炉
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置
JPH0447956Y2 (en, 2012) * 1985-04-16 1992-11-12
JPS62122123A (ja) * 1985-11-21 1987-06-03 Toshiba Corp 縦型熱処理装置
JPH0294627A (ja) * 1988-09-30 1990-04-05 Tel Sagami Ltd 熱処理方法
JP2905857B2 (ja) * 1989-08-11 1999-06-14 東京エレクトロン株式会社 縦型処理装置
JP2004103990A (ja) 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936417B2 (ja) * 1975-11-26 1984-09-04 株式会社デンソー 半導体基板への高周波誘導加熱による拡散装置
JPS55118631A (en) * 1979-03-07 1980-09-11 Fujitsu Ltd Diffusion furnace for treatment of semiconductor wafer

Also Published As

Publication number Publication date
JPS5875840A (ja) 1983-05-07

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