JPS62239563A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS62239563A JPS62239563A JP8351486A JP8351486A JPS62239563A JP S62239563 A JPS62239563 A JP S62239563A JP 8351486 A JP8351486 A JP 8351486A JP 8351486 A JP8351486 A JP 8351486A JP S62239563 A JPS62239563 A JP S62239563A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- polysilicon
- bipolar transistor
- channel
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 12
- 238000009792 diffusion process Methods 0.000 abstract description 7
- -1 arsenic ions Chemical class 0.000 abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000033558 biomineral tissue development Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 101150036577 fl11 gene Proteins 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8351486A JPS62239563A (ja) | 1986-04-11 | 1986-04-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8351486A JPS62239563A (ja) | 1986-04-11 | 1986-04-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62239563A true JPS62239563A (ja) | 1987-10-20 |
| JPH0577293B2 JPH0577293B2 (https=) | 1993-10-26 |
Family
ID=13804592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8351486A Granted JPS62239563A (ja) | 1986-04-11 | 1986-04-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62239563A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023964A (ja) * | 1988-01-19 | 1990-01-09 | Natl Semiconductor Corp <Ns> | 半導体装置においてポリシリコンゲートとポリシリコンエミッタとを同時に形成する方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
| JPS5931052A (ja) * | 1982-08-13 | 1984-02-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
-
1986
- 1986-04-11 JP JP8351486A patent/JPS62239563A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
| JPS5931052A (ja) * | 1982-08-13 | 1984-02-18 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023964A (ja) * | 1988-01-19 | 1990-01-09 | Natl Semiconductor Corp <Ns> | 半導体装置においてポリシリコンゲートとポリシリコンエミッタとを同時に形成する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577293B2 (https=) | 1993-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |