JPH0577293B2 - - Google Patents

Info

Publication number
JPH0577293B2
JPH0577293B2 JP61083514A JP8351486A JPH0577293B2 JP H0577293 B2 JPH0577293 B2 JP H0577293B2 JP 61083514 A JP61083514 A JP 61083514A JP 8351486 A JP8351486 A JP 8351486A JP H0577293 B2 JPH0577293 B2 JP H0577293B2
Authority
JP
Japan
Prior art keywords
polysilicon
bipolar transistor
emitter
oxide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61083514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62239563A (ja
Inventor
Katsumoto Soejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8351486A priority Critical patent/JPS62239563A/ja
Publication of JPS62239563A publication Critical patent/JPS62239563A/ja
Publication of JPH0577293B2 publication Critical patent/JPH0577293B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8351486A 1986-04-11 1986-04-11 半導体装置の製造方法 Granted JPS62239563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8351486A JPS62239563A (ja) 1986-04-11 1986-04-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8351486A JPS62239563A (ja) 1986-04-11 1986-04-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62239563A JPS62239563A (ja) 1987-10-20
JPH0577293B2 true JPH0577293B2 (https=) 1993-10-26

Family

ID=13804592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8351486A Granted JPS62239563A (ja) 1986-04-11 1986-04-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62239563A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68921995T2 (de) * 1988-01-19 1995-12-07 Nat Semiconductor Corp Verfahren zum Herstellen eines Polysiliciumemitters und eines Polysiliciumgates durch gleichzeitiges Ätzen von Polysilicium auf einem dünnen Gateoxid.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPS62239563A (ja) 1987-10-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term