JPS62109973A - 化学蒸着タングステン用のモリブデン接着層 - Google Patents

化学蒸着タングステン用のモリブデン接着層

Info

Publication number
JPS62109973A
JPS62109973A JP61236393A JP23639386A JPS62109973A JP S62109973 A JPS62109973 A JP S62109973A JP 61236393 A JP61236393 A JP 61236393A JP 23639386 A JP23639386 A JP 23639386A JP S62109973 A JPS62109973 A JP S62109973A
Authority
JP
Japan
Prior art keywords
tungsten
layer
molybdenum
chemical vapor
vapor deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61236393A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248752B2 (enExample
Inventor
デビット・ウィンフィールド・ウッドラフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS62109973A publication Critical patent/JPS62109973A/ja
Publication of JPS6248752B2 publication Critical patent/JPS6248752B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP61236393A 1985-10-07 1986-10-06 化学蒸着タングステン用のモリブデン接着層 Granted JPS62109973A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78498585A 1985-10-07 1985-10-07
US784985 1985-10-07

Publications (2)

Publication Number Publication Date
JPS62109973A true JPS62109973A (ja) 1987-05-21
JPS6248752B2 JPS6248752B2 (enExample) 1987-10-15

Family

ID=25134142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61236393A Granted JPS62109973A (ja) 1985-10-07 1986-10-06 化学蒸着タングステン用のモリブデン接着層

Country Status (4)

Country Link
JP (1) JPS62109973A (enExample)
DE (1) DE3631758A1 (enExample)
FR (1) FR2588277B1 (enExample)
GB (1) GB2181456B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525649A (ja) * 1991-07-09 1993-02-02 Korea Advanced Inst Of Sci Technol プラズマ化学蒸着法に依るタングステン薄膜蒸着方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0267730B1 (en) * 1986-11-10 1992-03-18 AT&T Corp. Tungsten metallization
DE3730644A1 (de) * 1987-09-11 1989-03-30 Baeuerle Dieter Verfahren zur vorgegeben strukturierten abscheidung von mikrostrukturen mit laserlicht
FR2621738B1 (fr) * 1987-10-08 1990-02-02 Mingam Herve Structure de transistor a effet de champ a grille metallique isolee et procede de fabrication
US4873152A (en) * 1988-02-17 1989-10-10 Air Products And Chemicals, Inc. Heat treated chemically vapor deposited products
US5149672A (en) * 1988-08-01 1992-09-22 Nadia Lifshitz Process for fabricating integrated circuits having shallow junctions
US4999317A (en) * 1989-09-29 1991-03-12 At&T Bell Laboratories Metallization processing
US5084415A (en) * 1989-10-23 1992-01-28 At&T Bell Laboratories Metallization processing
JP3491237B2 (ja) * 1993-09-24 2004-01-26 日本テキサス・インスツルメンツ株式会社 半導体装置の積層導電膜構造
US20090115060A1 (en) 2007-11-01 2009-05-07 Infineon Technologies Ag Integrated circuit device and method
CN110983249A (zh) * 2019-12-25 2020-04-10 中建材蚌埠玻璃工业设计研究院有限公司 一种大面积连续层状硫化钼的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR793015A (fr) * 1934-10-16 1936-01-15 Dispersion Cathodique S A Perfectionnements apportés à la dispersion cathodique
US2387903A (en) * 1944-03-14 1945-10-30 Mallory & Co Inc P R Contacting element
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals
DE2151127C3 (de) * 1970-12-16 1981-04-16 International Business Machines Corp., 10504 Armonk, N.Y. Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung
US3856647A (en) * 1973-05-15 1974-12-24 Ibm Multi-layer control or stress in thin films
US4234622A (en) * 1979-04-11 1980-11-18 The United States Of American As Represented By The Secretary Of The Army Vacuum deposition method
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4404234A (en) * 1981-12-23 1983-09-13 Bell Telephone Laboratories, Incorporated Electrode coating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525649A (ja) * 1991-07-09 1993-02-02 Korea Advanced Inst Of Sci Technol プラズマ化学蒸着法に依るタングステン薄膜蒸着方法

Also Published As

Publication number Publication date
FR2588277B1 (fr) 1991-08-16
JPS6248752B2 (enExample) 1987-10-15
GB8622272D0 (en) 1986-10-22
GB2181456B (en) 1989-10-25
FR2588277A1 (fr) 1987-04-10
GB2181456A (en) 1987-04-23
DE3631758C2 (enExample) 1988-05-19
DE3631758A1 (de) 1987-04-09

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