JPS6163018A - Ｓｉ薄膜結晶層の製造方法 - Google Patents

Ｓｉ薄膜結晶層の製造方法

Info

Publication number
JPS6163018A
JPS6163018A JP59183730A JP18373084A JPS6163018A JP S6163018 A JPS6163018 A JP S6163018A JP 59183730 A JP59183730 A JP 59183730A JP 18373084 A JP18373084 A JP 18373084A JP S6163018 A JPS6163018 A JP S6163018A
Authority
JP
Japan
Prior art keywords
substrate
thin film
semiconductor thin
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59183730A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236052B2 (OSRAM
Inventor
Toshio Yoshii
俊夫 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59183730A priority Critical patent/JPS6163018A/ja
Publication of JPS6163018A publication Critical patent/JPS6163018A/ja
Publication of JPH0236052B2 publication Critical patent/JPH0236052B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H10P14/274—
    • H10P14/2905—
    • H10P14/2926—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3411—
    • H10P14/3458—
    • H10P14/3802—
    • H10P14/3808—
    • H10P14/3818—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP59183730A 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法 Granted JPS6163018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183730A JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183730A JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS6163018A true JPS6163018A (ja) 1986-04-01
JPH0236052B2 JPH0236052B2 (OSRAM) 1990-08-15

Family

ID=16140962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183730A Granted JPS6163018A (ja) 1984-09-04 1984-09-04 Ｓｉ薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS6163018A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336514A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JPH0283915A (ja) * 1988-09-20 1990-03-26 Ricoh Co Ltd 半導体単結晶薄膜の製造方法
KR100518922B1 (ko) * 1996-01-30 2006-01-27 세이코 엡슨 가부시키가이샤 결정성막의형성방법및박막전자기기의제조방법
JP2013505578A (ja) * 2009-09-16 2013-02-14 アプライド マテリアルズ インコーポレイテッド パルストレインアニール法を使用する薄膜の固相再結晶化の方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878455A (ja) * 1981-10-08 1983-05-12 Nec Corp 半導体装置の製造方法
JPS5893222A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878455A (ja) * 1981-10-08 1983-05-12 Nec Corp 半導体装置の製造方法
JPS5893222A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336514A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JPH0283915A (ja) * 1988-09-20 1990-03-26 Ricoh Co Ltd 半導体単結晶薄膜の製造方法
KR100518922B1 (ko) * 1996-01-30 2006-01-27 세이코 엡슨 가부시키가이샤 결정성막의형성방법및박막전자기기의제조방법
JP2013505578A (ja) * 2009-09-16 2013-02-14 アプライド マテリアルズ インコーポレイテッド パルストレインアニール法を使用する薄膜の固相再結晶化の方法

Also Published As

Publication number Publication date
JPH0236052B2 (OSRAM) 1990-08-15

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