JPH0249276B2 - - Google Patents

Info

Publication number
JPH0249276B2
JPH0249276B2 JP57501707A JP50170782A JPH0249276B2 JP H0249276 B2 JPH0249276 B2 JP H0249276B2 JP 57501707 A JP57501707 A JP 57501707A JP 50170782 A JP50170782 A JP 50170782A JP H0249276 B2 JPH0249276 B2 JP H0249276B2
Authority
JP
Japan
Prior art keywords
layer
substrate
semiconductor material
growth
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57501707A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58500609A (ja
Inventor
Boooieu Tsuaua
Jon Shii Shii Fuan
Maikeru Daburyuu Geisu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Massachusetts Institute of Technology
Original Assignee
Massachusetts Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/254,871 external-priority patent/US4371421A/en
Application filed by Massachusetts Institute of Technology filed Critical Massachusetts Institute of Technology
Publication of JPS58500609A publication Critical patent/JPS58500609A/ja
Publication of JPH0249276B2 publication Critical patent/JPH0249276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3238—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H10P14/2905—
    • H10P14/2911—
    • H10P14/3411—
    • H10P14/3421—
    • H10P14/382—
    • H10P95/90—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP57501707A 1981-04-16 1982-04-14 播種固化による横方向エピタキシ−成長 Granted JPS58500609A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US254871 1981-04-16
US06/254,871 US4371421A (en) 1981-04-16 1981-04-16 Lateral epitaxial growth by seeded solidification
US35928482A 1982-03-18 1982-03-18
US359284 1982-03-18

Publications (2)

Publication Number Publication Date
JPS58500609A JPS58500609A (ja) 1983-04-21
JPH0249276B2 true JPH0249276B2 (OSRAM) 1990-10-29

Family

ID=26944290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57501707A Granted JPS58500609A (ja) 1981-04-16 1982-04-14 播種固化による横方向エピタキシ−成長

Country Status (4)

Country Link
EP (1) EP0087426B1 (OSRAM)
JP (1) JPS58500609A (OSRAM)
DE (1) DE3279842D1 (OSRAM)
WO (1) WO1982003639A1 (OSRAM)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
FR2566964B1 (fr) * 1984-06-29 1986-11-14 Commissariat Energie Atomique Procede de fabrication de capteurs a effet hall en couches minces
GB8504726D0 (en) * 1985-02-23 1985-03-27 Standard Telephones Cables Ltd Integrated circuits
JPS61270812A (ja) * 1985-05-22 1986-12-01 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置の製造方法
US4752590A (en) * 1986-08-20 1988-06-21 Bell Telephone Laboratories, Incorporated Method of producing SOI devices
WO1989004387A1 (en) * 1987-11-13 1989-05-18 Kopin Corporation Improved zone melt recrystallization method and apparatus
US5074952A (en) * 1987-11-13 1991-12-24 Kopin Corporation Zone-melt recrystallization method and apparatus
DE58905580D1 (de) * 1988-03-24 1993-10-21 Siemens Ag Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen.
DE10344986B4 (de) * 2003-09-27 2008-10-23 Forschungszentrum Dresden - Rossendorf E.V. Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten
DE102005036669A1 (de) * 2005-08-04 2007-02-08 Forschungszentrum Rossendorf E.V. Verfahren zur Behandlung von Halbleitersubstratoberflächen, die mittels intensiven Lichtimpulsen kurzzeitig aufgeschmolzen werden

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large

Also Published As

Publication number Publication date
EP0087426A1 (en) 1983-09-07
EP0087426B1 (en) 1989-07-26
DE3279842D1 (en) 1989-08-31
JPS58500609A (ja) 1983-04-21
EP0087426A4 (en) 1985-09-26
WO1982003639A1 (en) 1982-10-28

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