JPH0249276B2 - - Google Patents
Info
- Publication number
- JPH0249276B2 JPH0249276B2 JP57501707A JP50170782A JPH0249276B2 JP H0249276 B2 JPH0249276 B2 JP H0249276B2 JP 57501707 A JP57501707 A JP 57501707A JP 50170782 A JP50170782 A JP 50170782A JP H0249276 B2 JPH0249276 B2 JP H0249276B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semiconductor material
- growth
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 88
- 239000013078 crystal Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 60
- 230000012010 growth Effects 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 49
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 41
- 239000000080 wetting agent Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 238000002844 melting Methods 0.000 claims description 26
- 230000008018 melting Effects 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000000407 epitaxy Methods 0.000 claims description 14
- 238000010899 nucleation Methods 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 238000007711 solidification Methods 0.000 claims description 9
- 230000008023 solidification Effects 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 238000005054 agglomeration Methods 0.000 claims description 4
- 230000002776 aggregation Effects 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 22
- 238000000151 deposition Methods 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 239000002178 crystalline material Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010924 continuous production Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 claims 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 claims 1
- 239000005350 fused silica glass Substances 0.000 claims 1
- 238000001534 heteroepitaxy Methods 0.000 claims 1
- 238000001657 homoepitaxy Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000007737 ion beam deposition Methods 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000009736 wetting Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 128
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004857 zone melting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 241001632427 Radiola Species 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/06—Single-crystal growth by zone-melting; Refining by zone-melting the molten zone not extending over the whole cross-section
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20Â -Â H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Description
第ïŒå³ã¯æ¬çºæã®æ¹æ³ã®äžæ
æ§ã®æµãå³ã§ã
ãã 第ïŒå³ã¯ç¬¬ïŒå³ã«ç€ºããæ¹æ³ã«ããæ¬çºæã®ç¬¬
ïŒã®æ æ§ã瀺ãäžé£ã®ç¥å³ã§ããã 第ïŒå³ã¯æ¹¿æœ€å€å±€ãªãã§äœã€ãåŸæ¥æ§é ç©ã瀺
ãç¥å³ã§ããã 第ïŒå³ã¯æ¬çºæã®äžæè¡ãç°¡åã«ç€ºããŠããæŠ
ç¥éèŠå³ã§ããããµã³ãã«ãå ç±ããŠçµæ¶åºäœã
ã暪æ¹åãšãã¿ãã·ãŒæé·ãäœãåºãããã®éæ¢
åäžããŒã¿ã瀺ããŠããã 第ïŒïœå³ã¯ç¬¬ïŒå³äžã®ãµã³ãã«ãä»ãããç±ã
ããã€ã«ã瀺ãããããã§ããã 第ïŒïœå³ã¯ç¬¬ïŒå³äžã®ãµã³ãã«ã®äžéšã®æŠç¥æ
é¢å³ã§ããã 第ïŒå³ã¯æ¬çºæã®ïŒå ããŒã¿ã®éèŠå³ã§ããã 第ïŒå³ã¯ç¬¬ïŒå³ã®è£ 眮ããã詳现ã«ç€ºãæ¡å€§é
èŠå³ã§ããã 第ïŒå³ã¯ããŒã¿ãã¹ãã©ã€ã貫éè·¯ãšå¹³è¡ã«äœ
眮ããŠãã以å€ã¯ç¬¬ïŒå³ãšåæ§ãªéèŠå³ã§ããã 第ïŒå³ã¯åèäŸãšããŠç€ºãå®è³ªäžåçµæ¶ã§ãã
ã·ãŒãã®æé·ã«é©ããå€éšçš®æ¶ã®æŠç¥éèŠå³ã§ã
ãã 第ïŒå³ã¯åèäŸãšããŠç€ºãSiO2å€å±€ãæãã
å€éšçš®æ¶ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒå³ã¯åèäŸãšããŠç€ºãSiO2湿最å€å±€ãš
Siå±€ãçš®æ¶äžã«ååšããå€éšçš®æ¶ã®æŠç¥éèŠå³ã§
ããã 第ïŒïŒå³ã¯è€å湿最å€ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒïœå³ã¯æ¹¿æœ€å€ããã¹ã¯è¡šé¢ã«äœçœ®ããäž
æ æ§ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒå³ã¯æ¬çºæã®å¹³é¢åœ¢æå·¥çšã瀺ãäžé£ã®
æŠç¥éèŠå³ã§ããã 第ïŒïŒïŒ¡ïŒïŒïŒïŒ¢å³ã¯æ¬çºæã®æ¹æ³ã§äœããã
SiO2åºäœè¡šé¢äžã«æ§æãããïŒç«¯æ«ååå°äœã
ãã€ã¹ã®æ§é ã瀺ãäžéšæŠç¥å³ã§ããã 第ïŒïŒå³ã¯æ¬çºæã®æ¹æ³ã®å¥æ æ§ã瀺ãæµãå³
ã§ããã 第ïŒïŒå³ã¯ç°¡ç¥ããããããæè¡ã䜿ã€ãŠæçš®
åºåãèªçºããæ¬çºæã®å¥æ æ§ã®éèŠå³ã§ããã 第ïŒïŒå³ã¯ç¬¬ïŒïŒå³ã®ç·ïŒïŒâïŒïŒã«ãã€ãŠå
æããæ¡å€§äžéšæé¢å³ã§ããã ãçºæã®å®æœã«æè¯ã®æ æ§ã 以äžã®èšèŒã¯äžè¬çã«ã¯åå°äœã·ãªã³ã³ã®ãšã
ã¿ãã·âæé·ã«é¢ãããã·ãªã³ã³ã¯ä»æ¥æãéèŠ
ãªåå°äœææãªã®ã§ã·ãªã³ã³ãéžæããããã
ããæ¬çºæã¯æ±ºããŠããã«éå®ããããã®ã§ã¯ãª
ããäºå®ãæ¬çºæã¯å°äŸã§ã¯ããããåã¬ãªãŠ
ã ãã²ã«ãããŠã çã®è¯ãç¥ãããä»åå°äœæã®
ãšãã¿ãã·âæé·ãžã®é©çšã§ãæçã§ããã æ¬çºæã®æ§ã ã®ç¹å®æ æ§ãæ·»ä»å³é¢ãåç §ããª
ããä»ããäŸç€ºããããããå³é¢ã§åäžèŠçŽ ã¯å
äžæ°åã§ç€ºãããŠããã 第ïŒå³ã¯æ¬çºæã®äžæ æ§ã®å·¥çšã瀺ããããŒã·
ãŒãã§ããããã®æ¹æ³ã®ç¬¬ïŒå·¥çšã§çµæ¶æé·ãã¹
ã¯ãçµæ¶åºäœè¡šé¢äžã«åœ¢æããŠåºäœã®äžéšã被
ããåºäœã®äžéšé åãããåºããšãªã€ãŠãããã¿
ãŒã³ãäžãããçµæ¶åºäœã¯ã·ãªã³ã³ãã²ã«ãããŠ
ã ããåã¬ãªãŠã ãã®ä»ã®åå°äœã®åæ¶çã®åæ¶
åºäœæã¯ããã®è¡šé¢ã®å°ããšã幟ã€ãã®æŽé²é å
ã®è¡šé¢äžã§ã®çµæ¶æé·ãæ¯æã§ããä»åºäœã®ãã
ãã§ããããæé·ãã¹ã¯ã¯ãæé·ãã¹ã¯èªäœã®è¡š
é¢äžã§ã®æ žåã¯é»æ¢ãããæŽé²é åããã®æšªæ¹å
ã®çµæ¶æé·ã¯å¯èœã«ããææãã圢æãããã ãã®æ æ§ã®æ¬¡å·¥çšã§ã¯éæ¶è³ªåã¯å€æ¶è³ªã®åå°
äœæããã¹ã¯åã³åºäœã®æŽé²é åäžã«ä»çãã
ããããã¯äŸãã°ãã¹ã¯ãããåºäœãè¬åèžçå
å¿åšã«å ¥ããããšã«ããè¡ãªãã éæ¶è³ªåå°äœæã§ã§ãã第ïŒå±€åœ¢æå±€ã«é©åœãª
湿最å€ã§ã§ãã第ïŒå±€ã圢æããããã®ç¬¬ïŒå±€ã¯
第ïŒå±€ããé«ã溶è枩床ãæã€ããšã奜ãŸããã
äŸãã°ã第ïŒå±€ãéæ¶è³ªã·ãªã³ã³ãªã第ïŒå±€ã
SiO2ããæ§æã§ããããããææã®åèç¹ã¯Si
1430âãSiO21700âã§ããã ã€ãã§æ§é ç©ãè¿œã€ãŠè©³è¿°ããæ°æ¹æ³ã®ãã¡ã®
ãã¥ããã«ããå ç±ãµã€ã¯ã«ã«ä»ããŠç¬¬ïŒå±€ã溶
èã€ãã§åºåããããåºåãããšãã¹ã¯ã§æŽé²ã
ããé åã§åæ¶æé·ãéå§ãã暪æ¹åã®ãšãã¿ã
ã·ãŒéå°æé·ãçããã 第ïŒå³ã¯ã第ïŒå³ã®æ¹æ³ã§çµæ¶åºäœè¡šé¢ã§ã®å
æ¶æãããªãé£ç¶èã·ãŒãã®çæãç¥ç€ºããäžé£
ã®å³ã§ããã 第ïŒïŒ¡å³ã«ã¯æ¯èŒçåãçµæ¶åºäœïŒïŒã瀺ãã
ãŠããããã®åºäœã¯ãã®è¡šé¢ã§ãçµæ¶æé·ãæ¯æ
ã§ããç©è³ªãªããã¥ãã§ãããããã®è¡šé¢äžã«å
çµæ¶ã·ãªã³ã³ãæé·ãããã«é©åœãªåºäœã®å žåäŸ
ãšããŠåºäœïŒïŒã¯ïŒã50ãã«ã®ç¯å²å ã®åãã®å
æ¶Siã®ã¹ã©ãã§ãããããŒãã³ã°ããŠãã€ãŠããª
ããŠããããçæçµæ¶èãå¥é¢åé¢ãããªãã°ã
åºäœç©è³ªã«å¯Ÿããåªå çå¥é¢é¢ã§ããå¹³é¢äžã«åº
äœïŒïŒã®è¡šé¢ãããæ§ãªé åãåºäœïŒïŒã«æãã
ãããšãå¿ é ã§ã¯ãªãã奜ãŸããã 第ïŒïŒ¢å³ã«å³ç€ºã®åŠããã€ãã§çµæ¶æé·ãã¹ã¯
ïŒïŒãåºäœïŒïŒã«é©çšããããã¹ã¯ïŒïŒã¯åºäœïŒ
ïŒãæŽé²ãã貫éè·¯ãã¿ãŒã³ãæã€ãé©åœãªããš
ãçºèŠãããïŒã€ã®å žåçãã¿ãŒã³ã¯ç¬¬ïŒïŒ¢å³ã«
瀺ãããéãã®ã¹ãªããå³ã¡ã¹ãã©ã€ãïŒïŒã®ã
ã¿ãŒã³ã§ãããã¹ãªããïŒïŒã§ã®å¹ 察空éã®æ¯ã¯
ææãæé·æ¡ä»¶ãæèŠã®å±€åãçšããåé¢æè¡ç
ã«äŸåããŠå¹ åºãå€åããããæé©æ¯ã¯ãåã ã®
é©çšã«å·Šå³ãããããCLEFTé©çšã®ãšããã§è©³
è¿°ããæ¹æ³ã§æ±ºå®ã§ãããåœç¶ãã¹ãªãã以å€ã®
æŽé²é åã®ãã¿ãŒã³ãæããæé·ãã¹ã¯ã䜿çšã§
ããã 次ã«ã第ïŒïŒ£å³ã«å³ç€ºã®åŠããSiçã®éæ¶è³ªã
å€æ¶è³ªã®åå°äœæã§ã§ããå±€ïŒïŒããã¹ã¯äžã«åœ¢
æããŠïŒïŒã§ç€ºãããåŠãã¹ãã©ã€ãïŒïŒäžã«å»¶
ã°ããããåºãã®åæ¶åºäœïŒïŒã«æ¥è§Šããããã
ã®å±€ã¯è¬åèžççã®è¯ãç¥ãããæ¹æ³ã§åœ¢æã§ã
ãã æåŸã«ã第ïŒïŒ€å³ã«å³ç€ºã®åŠããäŸãã°SiO2
ã§ã§ãã第ïŒå±€ãäŸãã°è¬åèžçãç±é žåã§ç¬¬ïŒ
éæ¶è³ªSiå±€äžã«åœ¢æããã第ïŒïŒ€å³ã«å³ç€ºã®æ§é
ç©ãè¿œã€ãŠè©³è¿°ããåŠãç±åŠçã«ä»ããŠã·ãªã³ã³
å±€ïŒïŒã溶èãããã€ãã§ãã®å±€ïŒïŒãåºåãã
ãŠåæ¶æé·ããšãã¿ãã·ãŒåºäœïŒïŒãšã®çé¢ïŒïŒ
ããéå§ããããæèšããã°ããšãã¿ãã·ãŒæé·
ã¯åºäœïŒïŒã«ããâæçš®âãããããã®æé·ã¯æšª
æ¹åæé·åå¿ãåºäŒã€ãŠé£ç¶å±€ã圢æããè¿çé¢
ïŒïŒãã暪æ¹åãžé²ãã åŸæ¥ã®CLEFTæ³ã§ã®åé¡ç¹ãç¥ç€ºããŠãã第
ïŒå³ãèæ ®ããã°ç¬¬ïŒå±€ïŒïŒã®æ©èœã¯ãããã§ã
ãããCLEFTæ³ã§ã¯ç¬¬ïŒå±€ïŒïŒã䜿çšãããŠã
ãªãã®ã§ãéæ¶è³ªã·ãªã³ã³å±€ïŒïŒâ²ã溶èããæ
ã«ãã®å±€ãã第ïŒå³ã«ç¥ç€ºãããŠããéãéå¡å
å³ã¡âããŒã«åâããåŸåããããå Žåã«ãã€ãŠ
ã¯ãåºäœïŒïŒããã®æçš®ãšãã¿ãã·ãŒæé·ã®äžæ
ã®ããâããŒã«âã®éã«äžé£ç¶éšãäœãããéæ¶
質åã¯å€æ¶è³ªã®ææã§ã§ãã島ãïŒïŒã«äœãã
ããïŒïŒã§ã®åææé·ã¯çé¢ãé©åæ§è¡šé¢æ§é
ç©ãSiâSiã®éã«ãããéå¡åãçããªãã®ã§æº
足ãã¹ããã®ã§ããã 第ïŒå³ã«ç€ºãåŠã湿最å€å±€ïŒïŒãå±€ïŒïŒäžã«æ·»
å ãããšãããéå¡åŸåã¯æå°åã«ãªããå®è³ªäž
æ¬ æã®ãªã暪æ¹åãšãã¿ãã·ãŒæé·ãããè¿ãé
æããããç±åŠçåã³ä»ãã©ã¡ãŒã¿ã®éžæã«äŸå
ããŠïŒcmãè¶ã暪æ¹åæé·ãéæãããã以äžã®
延䌞ãäºæ³ãããã æ¬çºæã§èª¿è£œããããµã³ãã«ãé©åœãªå ç±ãµã€
ã¯ã«ã«ä»ãè£ çœ®ã第ïŒå³ãåç §ããŠè¿°ã¹ãã 第ïŒå³ã®è£ 眮ã§ã¯ã第ïŒïŒ¡ãå³ã«ãã補é ã
ãã次çµæãšå¯žæ³ãæãããŠãšããŒããåãåã€
ããã®æŽé²æé¢ã第ïŒïœå³ã«ç¥ç€ºãããŠããïŒÃ
ïŒcmãµã³ãã«ïŒïŒããSiåºäœïŒïŒãäžåãã«ããŠ
ã°ã©ãã¢ã€ãã¯ãã¹ã¹ããªããããŒã¿ïŒïŒã®äžã«
眮ãã SiåºäœïŒïŒâŠïŒcmçŽåŸã®ïŒ100ïŒãŠãšã㌠SiO2ãã¹ã¯ïŒïŒâŠç±é žåã§åœ¢æããã0.2ãã¯ã
ã³å éæ¶è³ªâŠ610âã®CVDåå¿åšå ã§æ²çãã0.8ã
1.0ãã¯ãã³å SiO2å±€ïŒïŒâŠ625âã§æ²çããïŒãã¯ãã³åCVD ã¹ãã©ã€ãâŠ3.5ãã¯ãã³å¹ ã§ãããããªããªã
ã°ã©ãã€ãŒã§ãã¹ã¯ïŒïŒäžã«éããããïŒ110
ïŒå¹³é¢ã«åçŽã çŽ2.5cmÃ2.5cmã®ã°ã©ãã¢ã€ãã·ãŒãïŒïŒãã¯
ãã¹ããŒã¿ïŒïŒãšãµã³ãã«ãšã®éã«æ¿åµããŠã¯ã
ã¹ããŒã¿å ã§ã®çµç¹ã«ããèªçºãããè¡šé¢ã®åœ¢æ
åŠçæ¬ æãå°ãªããããç±é»å¯ŸïŒïŒãã¯ãã¹ããŒ
ã¿ïŒïŒäžã«åå ¥ãããã°ã©ãã¢ã€ãã·ãŒãïŒïŒã
絶çžäœïŒAl2O3ïŒã§è¢«ã€ãŠã·ãŒãééã«èµ·å ãã
é»æµãé²æ¢ããããã®å ç±ã¯äžæŽ»æ§ã¬ã¹ïŒã¢ã«ãŽ
ã³ïŒé°å²æ°ã§è¡ãªãã ç±é»å¯ŸïŒïŒã§æž¬å®ããç±ãµã€ã¯ã«ãããã€ã«ã¯
第ïŒïœå³ïŒæž©åºŠâãæéïŒç§ïŒã«å¯ŸããŠãããã
ãããã®ã§ããïŒã«ç€ºãããŠããã枬å®æž©åºŠã¯ã°
ã©ãã¢ã€ãã¯ãã¹ããŒã¿ïŒïŒã§ã®æž©åºŠã§ãããå®
éã®ãµã³ãã«æž©åºŠã¯ç°ãªãããšããããæŽã«ãã
ã®ãããã€ã«ãç¶æããããšã§å埩å¯èœã®çµæã
éæã§ããã 第ïŒå³ãåç §ããªããèšèŒããåäžéæ¢ããŒã¿
ã®ä»£ããã«ç¬¬ïŒïŒïŒå³ã«ç€ºããïŒæ®µããŒã¿ã䜿ã€
ãŠãããããçµæãéæãããã第ïŒå³ã¯ãã®ïŒ
段ããŒã¿è£ 眮ã®ç¥å³ã§ãããåèšèšèŒã«ããäœã
ãããã®äžéšã第ïŒå³ã«ç€ºãããŠããå 工察象ãµ
ã³ãã«ïŒïŒã第ïŒå³ãšã®é¢é£ã§èšèŒããã°ã©ãã¢
ã€ãããŒã¿ã«å¯Ÿãããšåæ§ã«äžéšã¹ããªããããŒ
ã¿ïŒïŒã«ä¹ããããã®äžéšããŒã¿ãããæ段ïŒå³
瀺ãããŠããªãïŒã§äœåãããŠã·ãªã³ã³èç¹ã«è¿
ã枩床ã«ãããã€ãã§äžéšã¹ããªããããŒã¿ïŒïŒ
ïŒå¯åæ§ã§ããïŒãè¯ãç¥ãããŠããæ段ïŒå³ç€º
ãããŠããªãïŒã§äœåãããŠSiO2å±€ïŒïŒäžã®ã·
ãªã³ã³ïŒïŒã¹ããªãããŸãŒã³ïŒïŒã®æº¶èãèªçºã
ããã€ãã§äžéšããŒã¿ïŒïŒããµã³ãã«ïŒïŒäžé¢ã
éé䞊é²ãããŠæº¶èãŸãŒã³ïŒïŒãããŒã¿ïŒïŒãšäž
ç·ã«ç§»åãããŠãŸãŒã³æº¶èã€ãã§éæ¶è³ªSiå±€ïŒïŒ
ã®åºäœãèªçºããŠåæ¶æäžãžã®æšªæ¹åãšãã¿ãã·
ãŒæé·å€æå±€ïŒïŒãéæããã äŸãã°ãäžéšã°ã©ãã¢ã€ãã¹ããªããããŒã¿ã
æµæå ç±ããŠçŽ20ç§åŸã«1100ã1300âãšã§ããã
ã€ãã§çŽ1KWé»åã®é©åã§äžéšã¹ããªããããŒ
ã¿ãæ¥éå ç±ããããã®äžéšã¹ããªããããŒã¿ã
ãã®ç §å°ã§ãµã³ãã«ãæŽã«å ç±ãããš20ã40ç§åŸ
ã«Siãã€ã«ã ïŒïŒã®äžéšãšSiåºäœïŒïŒã®äžé¢ã®äž
éšãšãçãäžéšã¹ããªããããŒã¿ïŒïŒã®äžã«äœçœ®
ããçããŸãŒã³å ã§æº¶èãããã€ãã§ãã®ã¹ããª
ããããŒã¿ãçŽ0.5cmïŒç§ã®é床ã§ãµã³ãã«ïŒïŒ
ã®äžãæã§ç§»åãããããšãã§ããããã®é床ã¯
èçŒèŠ³å¯ã§ã溶èãŸãŒã³ãåäžé床ã§ãµã³ãã«ã
暪åãã«ååãªçšã«ãã€ãããã¹ãã§ãããã¹ã
ãªããããŒã¿ãšæº¶èãŸãŒã³ããµã³ãã«ã®é 端ã«é
ããæã«äž¡ããŒã¿ãžã®é»åãåãã 第ïŒïŒïŒå³ã®è£ 眮ã§ã¯ã¹ããªããããŒã¿ã¯ã¹ã
ã©ã€ã貫éè·¯ïŒïŒã«å¹³è¡ãªæ¹åã«èµ°æ»ããããå Ž
åã«ãã€ãŠã¯ã第ïŒå³ã«ç€ºãããåŠãåäžè²«éè·¯
ïŒïŒã«åçŽæ¹åã«èµ°æ»ãããŠé£ç¶ã·ãŒããäžæ¹å
ã«æé·ããåé¡ãé¿ããŠïŒã€ã®å¯Ÿåæé·ããã³ã
ã®äº€ããã«é¢é£ããããšãæãŸããããšãããã
第ïŒå³ã®è£ 眮ã§ã¯ãµã³ãã«ãäžéšããŒã¿ïŒå³ç€ºã
ããŠããªãïŒã«ããSiã®èç¹ã«è¿ã¥ãããã€ã
ã§ãåäžã¹ãã©ã€ã貫éè·¯ïŒïŒã§ã®æº¶èãã該貫
éè·¯ã«äžŠåããŠãããç¢å°æ¹åã«ç§»åããäžéšã
ãŒã¿ïŒïŒã§èªçºãããã¹ãã©ã€ã貫éè·¯ïŒïŒã§ã®
溶èãèªçºããã€ãã§å±€ïŒïŒã®åºåããšãã¿ãã·
ãŒæé·ããããŒã¿ïŒïŒããµã³ãã«ïŒïŒè¡šé¢ã暪å
ãéã«åæ¹åã«ç¶ããã 第ïŒå³ã®è£ 眮ã䜿ããšåæ¶äžã®çžåœé åã«ãã
ã€ãŠåäžé£ç¶çµ¶çžäœãçããããã¯ç©å±€åè·¯ã®ç
ç£ã«æå©ã§ãããæé·å±€ïŒïŒã®çµæ¶é åã¯åºäœïŒ
ïŒã®é åã§å®ãŸããäŸãã°ãåºäœïŒïŒãïŒ100ïŒ
å¹³é¢äžã«ãããªãã°å±€ïŒïŒã¯ïŒ100ïŒå¹³é¢äžã§é
åæé·ããã 第ïŒå³ã¯åèäŸãšããŠç€ºãå€éšçš®æ¶äœ¿çšäŸã瀺
ãããã®äŸã§ã¯çµ¶çžãã¹ã¯å±€ïŒïŒäžã«ã¹ãã©ã€ã
ïŒïŒã¯å¿ èŠãªããåºäœïŒïŒã¯æçš®ã«äœ¿çšãããªã
ã®ã§åæ¶åºäœã§ããå¿ èŠã¯ãªããéçµè³ªãå€æ¶è³ª
ã®ã·ãªã³ã³æã¯ã次åŸã®æŽ»æ§åå°äœå±€ãæ¯æãã
ã®ã«é©åœãªç©è³ªã®ãã¥ãã§ãããã å€ãã®è¯ãç¥ãããŠããæ段ã®ãã¥ããã«ãã
å€æ¶è³ªãéæ¶è³ªã®Siã®å±€ïŒïŒãSiO2å±€ïŒïŒè¡šé¢
äžã«åœ¢æããSiO2å±€ïŒïŒãSiå±€ïŒïŒã®äžé¢äžã«
圢æããŠåè¿°ã®åŠã湿最å€å±€ãšããŠåœ¹ç«ãŠããã
ãããSiO2ã®äžå±€ïŒïŒã®è¡šé¢äžã®äŸ¿å©ãªäœçœ®äŸ
ãã°ç«¯ã§å±€ïŒïŒã®äžéšãé€å»ããŠå±€ïŒïŒè¡šé¢äžã«
ãæç¶ç«¯éšïŒïŒãæ®ããåæ¶ã·ãªã³ã³ã®åœ¢ã®å€éš
çš®æ¶ïŒïŒãå±€ïŒïŒã®äžé¢äžã«é 眮ããŠåæç¶ç«¯éš
ïŒïŒã«äžéšéããã åè¿°æ æ§ãšåæ§ã«ãµã³ãã«ïŒïŒãäžéšã¹ããªã
ãããŒã¿ïŒå³ç€ºãããŠããªãïŒã§ã·ãªã³ã³èç¹è¿
ãã®æž©åºŠã«è¿å ç±ããã ã€ãã§äžéšã¹ããªããããŒã¿ïŒïŒãäœåãããŠ
ãµã³ãã«ïŒïŒããããŒã¿ïŒïŒé£æ¥ãŸãŒã³å ã§Siå±€
ïŒïŒã溶èããã枩床ãšããããã®ç«¯ã¯åæããŠ
ããã®ã§ããŒã¿ïŒïŒããã®èŒ»å°ãšãã«ã®ãŒå±€ïŒïŒ
äžã®Siå±€ã«å®¹æã«éãããŠå±€ïŒïŒã®æº¶èéå§ã容
æã«ãããã€ãã§ããŒã¿ããããŒã¿ããµã³ãã«ã®
ãã¥ãããçžäºã«ç§»åãããããšã«ããç¢å°æ¹å
ã«ãµã³ãã«ãè¶ããŠäžŠé²ãããããã®ãã溶èãŸ
ãŒã³ããµã³ãã«ã暪åã€ãŠç§»åããŠå±€ïŒïŒã®æº¶
èãåºåãçãããå±€ïŒïŒã¯å€éšçš®æ¶ïŒïŒããèª
å°ãããåçµæ¶ç¶æ ã§åºåããã å€éšçš®æ¶ã䜿ãã®ã§Siåºäœãåçµæ¶ã§ããå¿ èŠ
ã¯ãªããåŸã€ãŠã第ïŒïŒïŒïŒå³ã¯å€éšããã®æçš®
ã«ãããSiO2å±€ïŒïŒâ²çã®çµ¶çžå±€ã®è¡šé¢ã§ã®æšªæ¹
åãšãã¿ãã·ãŒæé·æ§é ã®å¥ã®åèäŸã瀺ãã第
ïŒå³ã®åèäŸã§ã¯çš®æ¶ïŒïŒãéæ¶è³ªSiå±€ïŒïŒâ²ã®
è¡šé¢ã«é 眮åŸã«æ¹¿æœ€å€å±€ïŒïŒãçš®æ¶äžã«åœ¢æãã
å šçš®æ¶ãã«ãã»ã«å°å ¥ã®åœ¢ãšããã第ïŒïŒå³ã§ã¯
éæ¶è³ªSiå±€ïŒïŒâ²ãšSiO2最æ»å€å±€ïŒïŒãšãå ±ã«ã
çš®æ¶ïŒïŒãSiO2絶çžåºäœïŒïŒâ²è¡šé¢ã«ä¹ããåŸã«
çš®æ¶ïŒïŒäžã«åœ¢æããã第ïŒïŒïŒïŒå³èšèŒã®ãµã³
ãã«ãã€ãã§ãåèšæ æ§ã«é¢é£ããŠèšèŒã®åŠãç±
åŠçã«ä»ããŠéæ¶è³ªSiå±€ïŒïŒâ²ããåæ¶ã®çš®æ¶ïŒ
ïŒãæçš®ããããšãã¿ãã·âã·ãªã³ã³å±€ã«å€æã
ãã 以äžã«èšèŒã®è£ 眮ã§ã¯åäžã®SiO2湿最å€å±€ã
䜿ã€ãŠããã第ïŒïŒå³ã«ç€ºãåèäŸã§ã¯CVDç
ã«ããçªåã·ãªã³ã³Si3N4å±€ïŒïŒãSiO2å±€ïŒïŒäž
ã«è¿œå 圢æãããä»ã®å šãŠã®ç¹ã«ãããŠãµã³ãã«
ïŒïŒã¯ç¬¬ïŒïŒ€å³ã®ãµã³ãã«ãšåäžã§ãããåæ§ã«
ç±åŠçããããè¿œå ãããSi3N4å±€ã¯SiO2åå±€ã«
æ¯ã¹ãŠè€åæ§é ç©ã®æ¹¿æœ€æ§ãæŽã«åŒ·åãããšæã
ããããã®è¿œå ã®Si3N4å±€ã¯ç¬¬ïŒïŒ€å³ã®åŠãSiO2
å±€äžé¢äžã«äœçœ®ãããããšãåãSiO2å±€ã®äžã«
Siå±€ïŒïŒãšé£æ¥ãããŠäœçœ®ãããããšãã§ããã ææãªãã°ãå Žåã«ãã€ãŠã¯ç¬¬ïŒïŒïœå³ïŒç¬¬ïŒ
ïŒå³äžã®éšæã«å¯Ÿå¿ããéšæã¯åäžæ°åã§ç€ºããŠ
ããïŒã«å³ç€ºã®åŠãSiO2絶çžãã¹ã¯ã®äžé¢ã«æ¹¿
最å€ã圢æãããšæãŸããããšããããäŸãã°ã
第ïŒïŒïœå³ã«ã¯åçµæ¶ç©è³ªãããªãã·ãªã³ã³åºäœ
ïŒïŒã瀺ãããããããäºé žåã·ãªã³ã³ãããªã
é žåç©è£œçµ¶çžãã¹ã¯ïŒïŒã圢æããããã®äºé žå
ã·ãªã³ã³è£œãã¹ã¯ïŒïŒã®äžé¢ã«ã¯çªåã·ãªã³ã³å±€
ã圢æãããããã¯éæ¶è³ªåã¯å€æ¶è³ªã®ã·ãªã³ã³
ã®å±€ïŒïŒããšãã¿ãã·ãŒçµæ¶å±€ã«å€æããéã®æ¹¿
最å€ãšããŠåœ¹ç«ãŠãããšãã§ããã çªåã·ãªã³ã³ã¯è¬åèžçãã¹ããã¿ãŒçã®è¯ã
ç¥ãããæ段ã®ãã¥ããã«ããå±€ïŒïŒäžã«åœ¢æã§
ããã éæ¶è³ªåã¯å€æ¶è³ªã®ã·ãªã³ã³å±€ïŒïŒã®äžé¢ã«å
è¿°ã®æ æ§ãšåæ§ã«ç¬¬ïŒã®äºé žåã·ãªã³ã³æ¹¿æœ€å€å±€
ã圢æãããã€ãã§ãµã³ãã«ã第ïŒïŒïœå³ã«ç€ºã
åŠãåè¿°ãšåæ§ã«ç±åŠçã«ä»ããŠãæçš®åºåã«èµ·
å ãã暪æ¹åãšãã¿ãã·ãŒæé·ã«ããã·ãªã³ã³åº
äœïŒïŒã®çµæ¶æ§é ã«ããéæ¶è³ªåã¯å€æ¶è³ªã®ã·ãª
ã³ã³å±€ïŒïŒããšãã¿ãã·ãŒã·ãªã³ã³å±€ã«å€æã
ãã æçš®åºåã«ããããŒã¿ãæããSiO2暪æ¹åãš
ãã¿ãã·ãŒã¯ç¬¬ïŒïŒïŒ¡ãã«å³ç€ºãããŠãããã
ãã«ãããå¹³é¢çã«ç€ºãããŠã¯ãããå®éã«ã¯è»ž
æ¹åæé·ãéå§ãããã¹ãã©ã€ãã«ããããªå¹³åŠ
åã圢æããåè¿°ã®æ æ§ãšã¯å¯Ÿç §çã«å¹³é¢ãšãã¿
ãã·ãŒæ§é ç©ãçæãããããã®æ æ§ã§ã¯ç¬¬ïŒïŒ
å³ã«ç€ºãããåŠãè¯ãç¥ãããæ段ã§çªåã·ãª
ã³ã³ã¹ãã©ã€ãïŒïŒãåçµæ¶ã·ãªã³ã³åºäœïŒïŒäž
ã«åœ¢æããããã€ãã§ãµã³ãã«ïŒïŒãç±é žåã«ä»
ããŠã第ïŒïŒïŒ¢å³ã«å³ç€ºã®åŠãSiåºäœïŒïŒäžã«
SiO2å±€ïŒïŒã圢æãããã€ãã§ã€ãªã³ããŒã ã
è¬åé£å»ã§Si3N4ãéžæçã«é£å»ããŠç¬¬ïŒïŒïŒ£å³
ã«ç€ºãããåŠãSiO2å±€ïŒïŒã®éã«ããåºãã®Si
ãããªãæºïŒïŒã圢æãããã€ãã§ãµã³ãã«ïŒïŒ
ãè¡šé¢é£å»ã«ä»ããŠãã®è¡šé¢ã第ïŒïŒïŒ€å³ã«ç€ºã
ããåŠãå¹³åŠã«ãªãè¿é žåç©ãé€ããæåŸã«ã第
ïŒïŒïŒ¥å³ã«å³ç€ºã®åŠããéæ¶è³ªSiå±€ïŒïŒããµã³ã
ã«ïŒïŒäžã«åœ¢æããSiO2ãã€ããå±€ïŒïŒäžã«åœ¢
æããŠç¬¬ïŒïŒïŒ¥å³ã«ç€ºãéãã®å¹³é¢æ§é äœãäœã
åºããããã§ãµã³ãã«ãåè¿°ã®åŠãç±åŠçããŠé
æ¶è³ªSiå±€ïŒïŒããšãã¿ãã·ãŒã«å€æããæºåãå®
äºããããšã«ãªãã 第ïŒïŒå³ã®æ¹æ³ãè£ çœ®ã§æäŸãããå¹³é¢ãšãã¿
ãã·ãŒæ§é äœã®å©ç¹ã«å ããåçµæ¶æ§é äœçé¢ã¯
SiO2å±€ïŒïŒã®äžé¢ãšå ±å»¶ãªã®ã§æº¶èãªSiO2å±€ïŒ
ïŒã®äžé¢ã«éããã°ããããšãç¹èšãããããã
ãã¯ãSiåºäœçé¢ãSiO2å±€ïŒïŒã®åºãšå ±å»¶ã§ã
ã第ïŒå³ã®æ æ§ãšã¯å¯Ÿç §çã§ãããæŽã«ãæé·ã¯
第ïŒïŒ€å³ã®ããŒã¿ãæããé¢ã§ã¯ãªãå¹³é¢ã§çã
ãã®ã§çµæ¶æ¬ æãçããåŸåã¯å°ãªããªãããšã
ããã 第ïŒïŒïŒ¢å³ã¯æ¬æ现æžèšèŒã®æ¹æ³ã§è£œé ããã
SiO2åºäœè¡šé¢ã«æ§æãããïŒå åå°äœè£ 眮ã®äž
éšç¥å³ã瀺ãã第ïŒïŒïŒ¢å³ã®è£ 眮ã¯LOCOSé žå
ç©ã§çµ¶çžãããŠããMOSFETã§ããã
MOSFETã¯éå±é žåç©åå°äœé»çå¹æãã©ã³ãž
ã¹ã¿ãæå³ãããLOCOSã¯ã·ãªã³ã³ã®å±æé žå
ãæå³ãããMOSFETã¯è¯ãç¥ãããè£ çœ®ã§ã
ããã¢ã¡ãªã«ãã®ä»ã§å€§éã«äœãããŠããã 第ïŒïŒïŒ¡å³ã¯æ¬çºæã«ããMOSFETã®åœ¢ææ³
ã瀺ããŠããããŸãåçµæ¶ã·ãªã³ã³ãããªãã·ãª
ã³ã³åºäœïŒïŒãé žåããŠäºé žåã·ãªã³ã³ãã¹ã¯ïŒ
ïŒã圢æãããã€ãã§éæ¶è³ªãå€æ¶è³ªã®ã·ãªã³ã³
æïŒïŒãSiO2ãã¹ã¯ïŒïŒäžã«åœ¢æããSiO2ãã
ãªã湿最å€å±€ïŒïŒã第ïŒå±€ïŒïŒäžã«åœ¢æãããã€
ãã§åèšæ æ§ã«ããéæ¶è³ªåã¯å€æ¶è³ªã®å±€ïŒïŒã
ç±åŠçã«ããå®è³ªäžãšãã¿ãã·ãŒã®å±€å³ã¡èïŒïŒ
ã«å€æãããã€ãã§SiO2湿最å€å±€ãäŸãã°è¬å
é£å»ã§é€ãã ã€ãã§ã第ïŒïŒïŒ¢å³ã«ç€ºãããåŠããè£ çœ®ã®æŽ»
æ§é åïŒïŒãè¯ãç¥ãããæ¹æ³ã§åœ¢æããã
LOCOSé žåç©ïŒïŒã§ä»æŽ»æ§é åïŒå³ç€ºãããŠã
ãªãïŒããåé¢ãããã€ãã§æŽ»æ§Siå±€ïŒïŒã®è¡šé¢
ã«ç±é žåç©å±€ïŒïŒã圢æãããããªã·ãªã³ã³ã²ãŒ
ãïŒïŒãè¬åèžçã«ããé žåç©å±€ïŒïŒäžã«åœ¢æã
ãããã®ã²ãŒãïŒïŒã¯åçå¹³æ¿ãšé£å»æè¡ã§å®ã
ããããã€ãã§æŽ»æ§é åïŒïŒã®ãœãŒã¹é åïŒïŒãš
ãã¬ã€ã³é åïŒïŒãšãžã®ã€ãªã³ç§»å ¥ã«ããé©åœãª
ããŒãã³ããå°å ¥ããããã®çªãã²ãŒããæãã
é žåç©å±€ïŒïŒã«éãããæåŸã«ã¢ã«ãããŠã 被èŠ
ã§ãœãŒã¹éšæãã²ãŒãéšæããã¬ã€ã³éšæãžã®æ¥
ç¹ã圢æããã 第ïŒïŒïŒ¢å³ã®è£ 眮ã¯æ¬æ现æžé瀺ã®æ¹æ³ã䜿ã
圢æã§ããå€ãã®ã¿ã€ãã®ç©å±€åè·¯å³ã¡åå°äœæ§
é ç©ã®ïŒäŸã«ãããªãããšã匷調ããã 第ïŒïŒãïŒïŒå³ã«ã¯ãåçµæ¶åãã¹ãå±€ã溶è
枩床é©çšéå§åŸã¯çš®æ¶ãšç©ççã«æ¥è§ŠããŠããå¿
èŠã®ãªãç¹ã§åèšæ æ§ãšææã«ç°ãªãæ¬çºæã®å¥
æ æ§ãèšèŒãããŠãããæ¬çºæã®ãã®æ æ§ã§ã¯æ¹
æ³ã¯ç¬¬ïŒïŒå³ã«ç€ºãããåŠããäžè¬ã«æ¬¡ã«åŠãèš
èŒã§ããã ãŸãçµæ¶åºäœã圢æããããã®çµæ¶åºäœã¯ç¬¬ïŒ
å³ã®ïŒïŒã§ç€ºãããåèšåçµæ¶åºäœã«å®è³ªäžäŒŒãŠ
ããŠããã ã€ãã§SiO2çã®çµ¶çžå±€ãåºäœäžé¢å šäœäžã«åœ¢
æãããåèšç¬¬ïŒïŒ¢å³ã®å±€ïŒïŒã®å Žåãšã¯ç°ãªã
ãã®çµ¶çžå±€ã«ã¯è¬åé£å»ã䜿ã貫éè·¯ãæäŸãã
å¿ èŠã¯ãªãããã®çµ¶çžç¬¬ïŒå±€ãåºäœäžã«åœ¢æåŸã«
å€æ¶è³ªåã¯éæ¶è³ªæã§ã§ãã第ïŒå±€ãè¯ãç¥ãã
ãæ段ã§çµ¶çžå±€äžã«åœ¢æããããã®ç¬¬ïŒå±€ãæ¬çº
æã®æ瀺ã«ããåçµæ¶ãããŠãšãã¿ãã·ãŒæé·ã
圢æãããå±€ã§ããããã®å±€ã¯äŸãã°ã第ïŒïŒ£å³
ã«é¢é£ããŠè¿°ã¹ãå±€ïŒïŒã®åŠãéæ¶è³ªã·ãªã³ã³ã§
ãããã€ãã§ç¬¬ïŒå±€äžã«ã第ïŒå±€ããé«ã溶èæž©
床ãæã€ããšã奜ãŸããææã§ã§ãã第ïŒãïŒå±€
ã圢æãããããã第ïŒãïŒå±€ã¯åè¿°ã®åŠã湿最
å€å±€ã§ãããSiO2å±€ããã«ç¶ãSi3N4å±€ã§æ§æã
ãããæçµçµæã¯ç¬¬ïŒïŒå³ãšé¢é£ãããŠåè¿°ãã
ãã®ãšåæ§ãªæ§é äœã§ããããSiO2絶çžå±€ïŒïŒ
ã«è²«éè·¯ã¯ãªãã 次工çšã¯ç¬¬ïŒãïŒãïŒãïŒå±€ãéã€ãŠåºäœã«é
ãã貫éè·¯ãæ§æããããã§ãããããã¯ãµã³ã
ã«ãåºäœã«éããè¿æ©æ¢°çã«ãããããšã«ããè¡
ãªããšå¥œãŸãããæ§æã容æãªã®ã§å¥œãŸããæ æ§
ã§ã¯æ©æ¢°çãããã䜿ã€ããããããæ¬çºæã¯ã
ã®ããã«éå®ããããã®ã§ã¯ãªãããã¹ãã³ã°ã
é£å»ãã¬ãŒã¶ãŒããããã®ä»ã®ä»è²«é路圢ææ段
ã䜿çšã§ããã ã€ãã§ãµã³ãã«ãã第ïŒå±€ã溶èãåºåããæž©
床ã«ä»ããŠãåæ¶æã§ã§ãã第ïŒå±€ã«ãã€ãŠã®çµ
æ¶æ§é ç©ã®ãšãã¿ãã·ãŒæé·ãåºäœãžã®éå£ã§æšª
æ¹åãžéå§ãããã 第ïŒïŒå³ã«ç€ºãããåŠããå å·¥è£ çœ®ã¯ç¬¬ïŒå³ãš
é¢é£ãããŠè¿°ã¹ããã®ãšéåžžã«è¯ã䌌ãŠããã第
ïŒïŒå³ã«ç€ºãéãã®æé¢ã®åœ¢ãšæ§æãæã¡ã第ïŒ
ïŒå³ã®æ¹æ³ã§æ§æããããŠãšãã¢ãŒãäžéšã¹ããª
ããããŒã¿ïŒïŒã«ä¹ããããã®äžéšããŒã¿ããã
æ段ïŒå³ç€ºãããŠããªãïŒã§äœåãããŠã·ãªã³ã³
èç¹ã«è¿ã枩床ãšããã ã€ãã§å¯åæ§ã®äžéšã¹ããªããããŒã¿ïŒïŒãè¯
ãç¥ãããæ段ïŒå³ç€ºãããŠããªãïŒã§äœåãã
ãŠãSi3N4å±€ãSiO2å±€ã®äžã®ã·ãªã³ã³ïŒïŒã®ã¹ã
ãªãããŸãŒã³ïŒïŒã®æº¶èãèªçºããã ã€ãã§äžéšããŒã¿ïŒïŒããµã³ãã«ïŒïŒäžé¢ãé
ã€ãŠäžŠé²ãããŠãããéšåïŒïŒïŒåã¯ãã®åã§æº¶
èãŸãŒã³ïŒïŒãããŒã¿ïŒïŒãšäžç·ã«ç§»åãããŠãŸ
ãŒã³æº¶èã€ãã§éæ¶è³ªã·ãªã³ã³å±€ïŒïŒã®åºåãèª
çºããŠæšªæ¹åãšãã¿ãã·ãŒæé·ãšãåæ¶æãžã®å±€
ïŒïŒã®å€æãéæããã 奜ãŸããã¯ãå ç±è£ 眮ãåºå ¥å£ã®åãã€ãã¹ã
ã³ã¬ã¹ã¹ããŒã«å®€å ã«é 眮ããããã®å®€ã¯æ°Žå·ã
ããšå¥œãŸãããäžéšã°ã©ãã¢ã€ãããŒã¿ïŒïŒã¯å ž
åçã«ã¯çŽïŒã€ã³ãïŒ17.78cmïŒé·ãïŒã€ã³ã
ïŒ10.16cmïŒå¹ ã0.04ã€ã³ãïŒ0.1016cmïŒåã§ããã
äžéšããŒã¿ã¯çŽ4.5ã€ã³ãïŒ11.43cmïŒé·ã0.04ã€
ã³ãïŒ0.1016cmïŒå¹ ã0.1ã€ã³ãïŒ0.254cmïŒåã§
ããããŠãšãã¢ãŒã¯çŽåŸïŒãïŒã€ã³ãïŒ5.08ã
7.62cmïŒãåãçŽ0.015ã€ã³ãïŒ0.0381cmïŒã§ããã
çŽåŸãïŒåã¯ïŒã€ã³ãïŒ5.08cmåã¯7.62cmïŒã§ã
äžéšããŒã¿ïŒïŒã®äžå¿ã§ã®æ·±ããçŽ0.01ã€ã³ã
ïŒ0.0254cmïŒã§ããç°åœ¢å¹æå ã«ããïŒç¬¬ïŒïŒå³
åç §ïŒãäžéšããŒã¿ã¯ãŠãšãã¢ãŒïŒïŒã®äžé¢ãã
çŽïŒmmé«ãäœçœ®ãããã¹ãã§ããã ã³ã³ããŠãŒã¿ã³ã³ãããŒã«ã¢ãŒã¿ïŒå³ç€ºãããŠ
ããªãïŒã§äžéšããŒã¿ããŠãšãã¢ãŒã暪åã€ãŠèµ°
æ»ããããäž¡ããŒã¿ã¯ãã€ã¯ãããã»ããµã§ã¢ã
ã¿ãŒãã³ã³ãããŒã«ãããïŒã300Aè¿ã®äº€æµã§
æµæå ç±ãããããŠãšãã¢ãŒã®äžå¿ã䞡端ã®æž©åºŠ
ã¯äžéšããŒã¿åå ¥ã®è¯ãç¥ãããç±é»å¯Ÿã§ã¢ãã¿
ãŒãããã·ãªã³ã³è£œãŠãšã¢ãŒïŒïŒã¯ç¬¬ïŒïŒå³ã®æ
é¢å³ã«ç€ºãããåŠããæ°åïŒïŒã§ç€ºãããçŽ1ÎŒ
ïœåã®ç±SiO2å±€ã§äžã被ãããåæ¶ïŒ100ïŒãŠãš
ãã¢10ã§ããã 0.5ÎŒïœåã®ã·ãªã³ã³èïŒïŒãè¬åèžçã§SiO2
å±€ãSiå±€ã®å šäžé¢ã«ä»çãããã ã€ãã§ç¡é žã·ãªã³ã³ãšSiO2ã®ã«ãã»ã«å°å ¥äœ
ãè¯ãç¥ãããæ段ã§ã·ãªã³ã³å±€ïŒïŒäžã«ä»çã
ãããSiO2å±€ã¯ïŒïŒãSi3N4å±€ã¯ïŒïŒã§ç€ºãã
ããåè¿°ã®åŠããŠãšãã¢ãŒæ§æåŸã«åæ¶åºäœïŒïŒ
ã«è³ã貫éè·¯ã奜ãŸããã¯ã第ïŒïŒïŒïŒïŒå³ã®ïŒ
ïŒïŒã§ç€ºãããåŠããŠãšãã¢ãŒãæ©æ¢°çã«ããã
ããšã«ããäœãããã®ãããã¯ç¬¬ïŒïŒå³ã«ç€ºãã
ãåŠãïŒ100ïŒå¹³åŠéšã«å¹³è¡ã§ããæã¯ïŒ100ïŒå¹³
é¢ã«ãã€ãŠå¹³åŠéšãš45ãã®è§åºŠã«é 眮ããŠãããã
ãã®ãããã¯ç¬¬ïŒïŒå³ã«ç€ºãããåŠãæé¢åœ¢ç¶ã
æã¡ãæ·±ããçŽïŒã8ÎŒïœã§ããã ãã®ããã貫éè·¯ã«ããããŸãŒã³æº¶èãããã
貫éè·¯åã«ãŠãšãã¢ãŒã®è¡šé¢ããå§ãŸãéãåæ¶
ã·ãªã³ã³åºäœïŒïŒãéæ¶è³ªã·ãªã³ã³å±€ïŒïŒã®åçµ
æ¶ã«äŸ¿å©ãªçš®æ¶ãšãªãããšãå¯èœã«ãªããæèšã
ãã°ããŸãŒã³æº¶èã¯ããã貫éè·¯ïŒïŒïŒã«éãã
åã«éå§ãããã°ãªããªããã€ãã§ã溶èãŸãŒã³
ïŒïŒãããã貫éè·¯ïŒïŒïŒã«éãããããã§çã
ãã«ã€ããŠäžå®éãããã貫éè·¯äžãäžéæµåã
ãŠãåºåã«ããã·ãªã³ã³åºäœïŒïŒãã·ãªã³ã³èïŒ
ïŒãšçµåãããããã貫éè·¯ïŒïŒïŒã®æ§ã ãªåœ¢ç¶
寞æ³ã䜿çšã§ããããšãããã€ãŠãããäŸãã°ãŠ
ãšãã¢ãŒã®çžãå²ãåç°åœ¢ãããã«ãããŠãšãã¢
ãŒã®ãã倧éšåã«æçš®ããããšãå¯èœã§ãããã
ã®æçš®æè¡ã䜿ãã°ïŒã€ã³ã2ïŒ25.8cm2ïŒãè¶ãã
暪æ¹åã§ãšãã¿ãã·ãŒã®æçš®åºåèãåŸããã倧
ããªè§åºŠãæã€ç²åãããªãå¢çããªãã 以äžãŸãšãããšãçŽåŸãå°ããšãïŒã€ã³ã
ïŒ7.62cmïŒã®SiO2被èŠã·ãªã³ã³è£œãŠãšãã¢ãŒäžã«
Sièãã«ãŒãã³ã§å¶åŸ¡å¯èœãªæ¹åŒã§åçµæ¶ããã
ããã®æ¹æ³ãšè£ 眮ã瀺ãããŠããã 第ïŒïŒãïŒïŒå³ã®æ¹æ³ãšè£ 眮ã¯ã第ïŒïŒïŒ¡ã
ãåç §ããŠèšèŒããè€éãªããŒã¿åœ¢ææ³ã䜿ããª
ããŠãçææ§é äœãå¹³é¢ã§ãããšããå©ç¹ãæ
ã€ãæŽã«ããããæè¡ã䜿ããªãã°ã第ïŒïŒ¡ã
ã®è£ 眮ã§ã¯å¿ èŠãšãããåçå¹³æ¿ã®å¿ èŠãé¿ãã
ããã以åã®æ æ§ã«ãããŠã¯æŽ»æ§Siãšãã¿ãã·ãŒ
å±€ïŒïŒåœ¢æåŸã§æ¬äœãæŽã«å å·¥ããåã«æ¹¿æœ€å€å±€
ïŒïŒïŒïŒïŒãé£å»ã§é€ãããšã奜ãŸããããšãã
ãããšãç¹èšããã åè¿°ã®åŠããèšèŒããæ æ§ã®æ¬çºæã®æ¹æ³ãè£
眮ãã·ãªã³ã³ã®å Žåã«éå®ãããªããäŸãã°ãå
ã¬ãªãŠã ãæ¬æ¹æ³ã§éæ¶è³ªåã¯å€æ¶è³ªã®ç¶æ ãã
ãšãã¿ãã·ãŒç¶æ ã«å€æã§ããããåã¬ãªãŠã ã«
é©åœãªæ¹¿æœ€å€ã®èå³ã¡å±€ã¯äºé žåã·ãªã³ã³SiO2ã
çªåã·ãªã³ã³Si3N4ãã¿ã³ã°ã¹ãã³åã¯ã¢ãªãã
ã³ã§ãããåæ§ã«ã²ã«ãããŠã ãåèšæ¹æ³ã§éæ¶
質ãå€æ¶è³ªã®ç¶æ ãããšãã¿ãã·ãŒçµæ¶èã«å€æ
ã§ãããã²ã«ãããŠã ã®å Žåã¯é©åœãªæ¹¿æœ€å€ã¯çª
åã·ãªã³ã³ãã¢ãªããã³åã¯ã¿ã³ã°ã¹ãã³ã§ã
ãã åãã·ãªã³ã³ã®å Žåã«åœ¹ç«ã€åèšæ¹¿æœ€å€ã®ä»
ã«ãã·ãªã³ã³ãå€æ¶è ãããšãã¿ãã·ãŒèã«å€æ
ããã®ã«ççŽ ãã·ãªã³ã³ã«ãŒãã€ãã湿最å€ãšã
ãŠåœ¹ç«ã€ããšãçºèŠãããã äžè¬ã«ãå€æäžã«æº¶èãé¿ããããã«ååé«ã
èç¹ãæã¡ãå€æ察象èãšã®çžäºäœçšã¯å°ããå
èšå®çŸ©éãã®â湿最å€âãšããŠåœ¹ç«ã€ååãªçžäº
äœçšãæã€ãã®ãé©åœãªæ¹¿æœ€å€ã§ããããšãçºèŠ
ãããã æ¬æ现æžã«æèšããæ æ§ã®åçç©ã¯å€æ°ããã
ãããåçç©ãè«æ±ã®ç¯å²ã«å«ãŸãããäŸãã°ã
å€ãã®äŸã§éæ¶è³ªãå€æ¶è³ªã®èå³ã¡å±€ãè¿°ã¹ãã
ãŠãããçšèªâèâãšâå±€âã¯çžäºå€æããŠäœ¿çš
ã§ãããåãçš®æ¶æãåºäœã®å šäœãå ããå¿ èŠã¯
ãªããçµæ¶åãããèå³ã¡å±€ãšæ¥è§Šããéšåã®ã¿
ãæ§æããã°ãããæ£ã«ãçš®æ¶ã¯åºäœã®äžéšã§ã
ãå¿ èŠã¯ãªããå±æç±åŠçã«ããçã®å±æçµæ¶å
ã«ããèäžã«åœ¢æã§ãããæŽã«ãçš®æ¶æã¯çµæ¶å
ãã¹ãç©è³ªãšåäžçµæã§ããå¿ èŠã¯ãªããäŸã
ã°ãéæ¶è³ªã²ã«ãããŠã ã«åæ¶ã·ãªã³ã³ãæçš®ã§
ããã æŽã«ãæé·ã¯ã¹ãã©ã€ã貫éè·¯ã«å¯Ÿããç±æºã®
åçŽã®åãã«åºããŠæšªæ¹åã«é²ããšç€ºãããŠãã
ããå Žåã«ãã€ãŠã¯ãã®å ç±éšæãã¹ãã©ã€ã貫
éè·¯ã«æ亀ããæ¹åã§ç§»åãããŠãæå©ã§ããã
以äžã«è¿°ã¹ãå ç±éšæã¯ã°ã©ãã¢ã€ãã§æ§æãã
ãŠããããé»åããŒã ãã¬ãŒã¶ãŒããŒã ãã®ä»ã®
茻å°æºã䜿çšã§ããã
ãã 第ïŒå³ã¯ç¬¬ïŒå³ã«ç€ºããæ¹æ³ã«ããæ¬çºæã®ç¬¬
ïŒã®æ æ§ã瀺ãäžé£ã®ç¥å³ã§ããã 第ïŒå³ã¯æ¹¿æœ€å€å±€ãªãã§äœã€ãåŸæ¥æ§é ç©ã瀺
ãç¥å³ã§ããã 第ïŒå³ã¯æ¬çºæã®äžæè¡ãç°¡åã«ç€ºããŠããæŠ
ç¥éèŠå³ã§ããããµã³ãã«ãå ç±ããŠçµæ¶åºäœã
ã暪æ¹åãšãã¿ãã·ãŒæé·ãäœãåºãããã®éæ¢
åäžããŒã¿ã瀺ããŠããã 第ïŒïœå³ã¯ç¬¬ïŒå³äžã®ãµã³ãã«ãä»ãããç±ã
ããã€ã«ã瀺ãããããã§ããã 第ïŒïœå³ã¯ç¬¬ïŒå³äžã®ãµã³ãã«ã®äžéšã®æŠç¥æ
é¢å³ã§ããã 第ïŒå³ã¯æ¬çºæã®ïŒå ããŒã¿ã®éèŠå³ã§ããã 第ïŒå³ã¯ç¬¬ïŒå³ã®è£ 眮ããã詳现ã«ç€ºãæ¡å€§é
èŠå³ã§ããã 第ïŒå³ã¯ããŒã¿ãã¹ãã©ã€ã貫éè·¯ãšå¹³è¡ã«äœ
眮ããŠãã以å€ã¯ç¬¬ïŒå³ãšåæ§ãªéèŠå³ã§ããã 第ïŒå³ã¯åèäŸãšããŠç€ºãå®è³ªäžåçµæ¶ã§ãã
ã·ãŒãã®æé·ã«é©ããå€éšçš®æ¶ã®æŠç¥éèŠå³ã§ã
ãã 第ïŒå³ã¯åèäŸãšããŠç€ºãSiO2å€å±€ãæãã
å€éšçš®æ¶ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒå³ã¯åèäŸãšããŠç€ºãSiO2湿最å€å±€ãš
Siå±€ãçš®æ¶äžã«ååšããå€éšçš®æ¶ã®æŠç¥éèŠå³ã§
ããã 第ïŒïŒå³ã¯è€å湿最å€ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒïœå³ã¯æ¹¿æœ€å€ããã¹ã¯è¡šé¢ã«äœçœ®ããäž
æ æ§ã®æŠç¥éèŠå³ã§ããã 第ïŒïŒå³ã¯æ¬çºæã®å¹³é¢åœ¢æå·¥çšã瀺ãäžé£ã®
æŠç¥éèŠå³ã§ããã 第ïŒïŒïŒ¡ïŒïŒïŒïŒ¢å³ã¯æ¬çºæã®æ¹æ³ã§äœããã
SiO2åºäœè¡šé¢äžã«æ§æãããïŒç«¯æ«ååå°äœã
ãã€ã¹ã®æ§é ã瀺ãäžéšæŠç¥å³ã§ããã 第ïŒïŒå³ã¯æ¬çºæã®æ¹æ³ã®å¥æ æ§ã瀺ãæµãå³
ã§ããã 第ïŒïŒå³ã¯ç°¡ç¥ããããããæè¡ã䜿ã€ãŠæçš®
åºåãèªçºããæ¬çºæã®å¥æ æ§ã®éèŠå³ã§ããã 第ïŒïŒå³ã¯ç¬¬ïŒïŒå³ã®ç·ïŒïŒâïŒïŒã«ãã€ãŠå
æããæ¡å€§äžéšæé¢å³ã§ããã ãçºæã®å®æœã«æè¯ã®æ æ§ã 以äžã®èšèŒã¯äžè¬çã«ã¯åå°äœã·ãªã³ã³ã®ãšã
ã¿ãã·âæé·ã«é¢ãããã·ãªã³ã³ã¯ä»æ¥æãéèŠ
ãªåå°äœææãªã®ã§ã·ãªã³ã³ãéžæããããã
ããæ¬çºæã¯æ±ºããŠããã«éå®ããããã®ã§ã¯ãª
ããäºå®ãæ¬çºæã¯å°äŸã§ã¯ããããåã¬ãªãŠ
ã ãã²ã«ãããŠã çã®è¯ãç¥ãããä»åå°äœæã®
ãšãã¿ãã·âæé·ãžã®é©çšã§ãæçã§ããã æ¬çºæã®æ§ã ã®ç¹å®æ æ§ãæ·»ä»å³é¢ãåç §ããª
ããä»ããäŸç€ºããããããå³é¢ã§åäžèŠçŽ ã¯å
äžæ°åã§ç€ºãããŠããã 第ïŒå³ã¯æ¬çºæã®äžæ æ§ã®å·¥çšã瀺ããããŒã·
ãŒãã§ããããã®æ¹æ³ã®ç¬¬ïŒå·¥çšã§çµæ¶æé·ãã¹
ã¯ãçµæ¶åºäœè¡šé¢äžã«åœ¢æããŠåºäœã®äžéšã被
ããåºäœã®äžéšé åãããåºããšãªã€ãŠãããã¿
ãŒã³ãäžãããçµæ¶åºäœã¯ã·ãªã³ã³ãã²ã«ãããŠ
ã ããåã¬ãªãŠã ãã®ä»ã®åå°äœã®åæ¶çã®åæ¶
åºäœæã¯ããã®è¡šé¢ã®å°ããšã幟ã€ãã®æŽé²é å
ã®è¡šé¢äžã§ã®çµæ¶æé·ãæ¯æã§ããä»åºäœã®ãã
ãã§ããããæé·ãã¹ã¯ã¯ãæé·ãã¹ã¯èªäœã®è¡š
é¢äžã§ã®æ žåã¯é»æ¢ãããæŽé²é åããã®æšªæ¹å
ã®çµæ¶æé·ã¯å¯èœã«ããææãã圢æãããã ãã®æ æ§ã®æ¬¡å·¥çšã§ã¯éæ¶è³ªåã¯å€æ¶è³ªã®åå°
äœæããã¹ã¯åã³åºäœã®æŽé²é åäžã«ä»çãã
ããããã¯äŸãã°ãã¹ã¯ãããåºäœãè¬åèžçå
å¿åšã«å ¥ããããšã«ããè¡ãªãã éæ¶è³ªåå°äœæã§ã§ãã第ïŒå±€åœ¢æå±€ã«é©åœãª
湿最å€ã§ã§ãã第ïŒå±€ã圢æããããã®ç¬¬ïŒå±€ã¯
第ïŒå±€ããé«ã溶è枩床ãæã€ããšã奜ãŸããã
äŸãã°ã第ïŒå±€ãéæ¶è³ªã·ãªã³ã³ãªã第ïŒå±€ã
SiO2ããæ§æã§ããããããææã®åèç¹ã¯Si
1430âãSiO21700âã§ããã ã€ãã§æ§é ç©ãè¿œã€ãŠè©³è¿°ããæ°æ¹æ³ã®ãã¡ã®
ãã¥ããã«ããå ç±ãµã€ã¯ã«ã«ä»ããŠç¬¬ïŒå±€ã溶
èã€ãã§åºåããããåºåãããšãã¹ã¯ã§æŽé²ã
ããé åã§åæ¶æé·ãéå§ãã暪æ¹åã®ãšãã¿ã
ã·ãŒéå°æé·ãçããã 第ïŒå³ã¯ã第ïŒå³ã®æ¹æ³ã§çµæ¶åºäœè¡šé¢ã§ã®å
æ¶æãããªãé£ç¶èã·ãŒãã®çæãç¥ç€ºããäžé£
ã®å³ã§ããã 第ïŒïŒ¡å³ã«ã¯æ¯èŒçåãçµæ¶åºäœïŒïŒã瀺ãã
ãŠããããã®åºäœã¯ãã®è¡šé¢ã§ãçµæ¶æé·ãæ¯æ
ã§ããç©è³ªãªããã¥ãã§ãããããã®è¡šé¢äžã«å
çµæ¶ã·ãªã³ã³ãæé·ãããã«é©åœãªåºäœã®å žåäŸ
ãšããŠåºäœïŒïŒã¯ïŒã50ãã«ã®ç¯å²å ã®åãã®å
æ¶Siã®ã¹ã©ãã§ãããããŒãã³ã°ããŠãã€ãŠããª
ããŠããããçæçµæ¶èãå¥é¢åé¢ãããªãã°ã
åºäœç©è³ªã«å¯Ÿããåªå çå¥é¢é¢ã§ããå¹³é¢äžã«åº
äœïŒïŒã®è¡šé¢ãããæ§ãªé åãåºäœïŒïŒã«æãã
ãããšãå¿ é ã§ã¯ãªãã奜ãŸããã 第ïŒïŒ¢å³ã«å³ç€ºã®åŠããã€ãã§çµæ¶æé·ãã¹ã¯
ïŒïŒãåºäœïŒïŒã«é©çšããããã¹ã¯ïŒïŒã¯åºäœïŒ
ïŒãæŽé²ãã貫éè·¯ãã¿ãŒã³ãæã€ãé©åœãªããš
ãçºèŠãããïŒã€ã®å žåçãã¿ãŒã³ã¯ç¬¬ïŒïŒ¢å³ã«
瀺ãããéãã®ã¹ãªããå³ã¡ã¹ãã©ã€ãïŒïŒã®ã
ã¿ãŒã³ã§ãããã¹ãªããïŒïŒã§ã®å¹ 察空éã®æ¯ã¯
ææãæé·æ¡ä»¶ãæèŠã®å±€åãçšããåé¢æè¡ç
ã«äŸåããŠå¹ åºãå€åããããæé©æ¯ã¯ãåã ã®
é©çšã«å·Šå³ãããããCLEFTé©çšã®ãšããã§è©³
è¿°ããæ¹æ³ã§æ±ºå®ã§ãããåœç¶ãã¹ãªãã以å€ã®
æŽé²é åã®ãã¿ãŒã³ãæããæé·ãã¹ã¯ã䜿çšã§
ããã 次ã«ã第ïŒïŒ£å³ã«å³ç€ºã®åŠããSiçã®éæ¶è³ªã
å€æ¶è³ªã®åå°äœæã§ã§ããå±€ïŒïŒããã¹ã¯äžã«åœ¢
æããŠïŒïŒã§ç€ºãããåŠãã¹ãã©ã€ãïŒïŒäžã«å»¶
ã°ããããåºãã®åæ¶åºäœïŒïŒã«æ¥è§Šããããã
ã®å±€ã¯è¬åèžççã®è¯ãç¥ãããæ¹æ³ã§åœ¢æã§ã
ãã æåŸã«ã第ïŒïŒ€å³ã«å³ç€ºã®åŠããäŸãã°SiO2
ã§ã§ãã第ïŒå±€ãäŸãã°è¬åèžçãç±é žåã§ç¬¬ïŒ
éæ¶è³ªSiå±€äžã«åœ¢æããã第ïŒïŒ€å³ã«å³ç€ºã®æ§é
ç©ãè¿œã€ãŠè©³è¿°ããåŠãç±åŠçã«ä»ããŠã·ãªã³ã³
å±€ïŒïŒã溶èãããã€ãã§ãã®å±€ïŒïŒãåºåãã
ãŠåæ¶æé·ããšãã¿ãã·ãŒåºäœïŒïŒãšã®çé¢ïŒïŒ
ããéå§ããããæèšããã°ããšãã¿ãã·ãŒæé·
ã¯åºäœïŒïŒã«ããâæçš®âãããããã®æé·ã¯æšª
æ¹åæé·åå¿ãåºäŒã€ãŠé£ç¶å±€ã圢æããè¿çé¢
ïŒïŒãã暪æ¹åãžé²ãã åŸæ¥ã®CLEFTæ³ã§ã®åé¡ç¹ãç¥ç€ºããŠãã第
ïŒå³ãèæ ®ããã°ç¬¬ïŒå±€ïŒïŒã®æ©èœã¯ãããã§ã
ãããCLEFTæ³ã§ã¯ç¬¬ïŒå±€ïŒïŒã䜿çšãããŠã
ãªãã®ã§ãéæ¶è³ªã·ãªã³ã³å±€ïŒïŒâ²ã溶èããæ
ã«ãã®å±€ãã第ïŒå³ã«ç¥ç€ºãããŠããéãéå¡å
å³ã¡âããŒã«åâããåŸåããããå Žåã«ãã€ãŠ
ã¯ãåºäœïŒïŒããã®æçš®ãšãã¿ãã·ãŒæé·ã®äžæ
ã®ããâããŒã«âã®éã«äžé£ç¶éšãäœãããéæ¶
質åã¯å€æ¶è³ªã®ææã§ã§ãã島ãïŒïŒã«äœãã
ããïŒïŒã§ã®åææé·ã¯çé¢ãé©åæ§è¡šé¢æ§é
ç©ãSiâSiã®éã«ãããéå¡åãçããªãã®ã§æº
足ãã¹ããã®ã§ããã 第ïŒå³ã«ç€ºãåŠã湿最å€å±€ïŒïŒãå±€ïŒïŒäžã«æ·»
å ãããšãããéå¡åŸåã¯æå°åã«ãªããå®è³ªäž
æ¬ æã®ãªã暪æ¹åãšãã¿ãã·ãŒæé·ãããè¿ãé
æããããç±åŠçåã³ä»ãã©ã¡ãŒã¿ã®éžæã«äŸå
ããŠïŒcmãè¶ã暪æ¹åæé·ãéæãããã以äžã®
延䌞ãäºæ³ãããã æ¬çºæã§èª¿è£œããããµã³ãã«ãé©åœãªå ç±ãµã€
ã¯ã«ã«ä»ãè£ çœ®ã第ïŒå³ãåç §ããŠè¿°ã¹ãã 第ïŒå³ã®è£ 眮ã§ã¯ã第ïŒïŒ¡ãå³ã«ãã補é ã
ãã次çµæãšå¯žæ³ãæãããŠãšããŒããåãåã€
ããã®æŽé²æé¢ã第ïŒïœå³ã«ç¥ç€ºãããŠããïŒÃ
ïŒcmãµã³ãã«ïŒïŒããSiåºäœïŒïŒãäžåãã«ããŠ
ã°ã©ãã¢ã€ãã¯ãã¹ã¹ããªããããŒã¿ïŒïŒã®äžã«
眮ãã SiåºäœïŒïŒâŠïŒcmçŽåŸã®ïŒ100ïŒãŠãšã㌠SiO2ãã¹ã¯ïŒïŒâŠç±é žåã§åœ¢æããã0.2ãã¯ã
ã³å éæ¶è³ªâŠ610âã®CVDåå¿åšå ã§æ²çãã0.8ã
1.0ãã¯ãã³å SiO2å±€ïŒïŒâŠ625âã§æ²çããïŒãã¯ãã³åCVD ã¹ãã©ã€ãâŠ3.5ãã¯ãã³å¹ ã§ãããããªããªã
ã°ã©ãã€ãŒã§ãã¹ã¯ïŒïŒäžã«éããããïŒ110
ïŒå¹³é¢ã«åçŽã çŽ2.5cmÃ2.5cmã®ã°ã©ãã¢ã€ãã·ãŒãïŒïŒãã¯
ãã¹ããŒã¿ïŒïŒãšãµã³ãã«ãšã®éã«æ¿åµããŠã¯ã
ã¹ããŒã¿å ã§ã®çµç¹ã«ããèªçºãããè¡šé¢ã®åœ¢æ
åŠçæ¬ æãå°ãªããããç±é»å¯ŸïŒïŒãã¯ãã¹ããŒ
ã¿ïŒïŒäžã«åå ¥ãããã°ã©ãã¢ã€ãã·ãŒãïŒïŒã
絶çžäœïŒAl2O3ïŒã§è¢«ã€ãŠã·ãŒãééã«èµ·å ãã
é»æµãé²æ¢ããããã®å ç±ã¯äžæŽ»æ§ã¬ã¹ïŒã¢ã«ãŽ
ã³ïŒé°å²æ°ã§è¡ãªãã ç±é»å¯ŸïŒïŒã§æž¬å®ããç±ãµã€ã¯ã«ãããã€ã«ã¯
第ïŒïœå³ïŒæž©åºŠâãæéïŒç§ïŒã«å¯ŸããŠãããã
ãããã®ã§ããïŒã«ç€ºãããŠããã枬å®æž©åºŠã¯ã°
ã©ãã¢ã€ãã¯ãã¹ããŒã¿ïŒïŒã§ã®æž©åºŠã§ãããå®
éã®ãµã³ãã«æž©åºŠã¯ç°ãªãããšããããæŽã«ãã
ã®ãããã€ã«ãç¶æããããšã§å埩å¯èœã®çµæã
éæã§ããã 第ïŒå³ãåç §ããªããèšèŒããåäžéæ¢ããŒã¿
ã®ä»£ããã«ç¬¬ïŒïŒïŒå³ã«ç€ºããïŒæ®µããŒã¿ã䜿ã€
ãŠãããããçµæãéæãããã第ïŒå³ã¯ãã®ïŒ
段ããŒã¿è£ 眮ã®ç¥å³ã§ãããåèšèšèŒã«ããäœã
ãããã®äžéšã第ïŒå³ã«ç€ºãããŠããå 工察象ãµ
ã³ãã«ïŒïŒã第ïŒå³ãšã®é¢é£ã§èšèŒããã°ã©ãã¢
ã€ãããŒã¿ã«å¯Ÿãããšåæ§ã«äžéšã¹ããªããããŒ
ã¿ïŒïŒã«ä¹ããããã®äžéšããŒã¿ãããæ段ïŒå³
瀺ãããŠããªãïŒã§äœåãããŠã·ãªã³ã³èç¹ã«è¿
ã枩床ã«ãããã€ãã§äžéšã¹ããªããããŒã¿ïŒïŒ
ïŒå¯åæ§ã§ããïŒãè¯ãç¥ãããŠããæ段ïŒå³ç€º
ãããŠããªãïŒã§äœåãããŠSiO2å±€ïŒïŒäžã®ã·
ãªã³ã³ïŒïŒã¹ããªãããŸãŒã³ïŒïŒã®æº¶èãèªçºã
ããã€ãã§äžéšããŒã¿ïŒïŒããµã³ãã«ïŒïŒäžé¢ã
éé䞊é²ãããŠæº¶èãŸãŒã³ïŒïŒãããŒã¿ïŒïŒãšäž
ç·ã«ç§»åãããŠãŸãŒã³æº¶èã€ãã§éæ¶è³ªSiå±€ïŒïŒ
ã®åºäœãèªçºããŠåæ¶æäžãžã®æšªæ¹åãšãã¿ãã·
ãŒæé·å€æå±€ïŒïŒãéæããã äŸãã°ãäžéšã°ã©ãã¢ã€ãã¹ããªããããŒã¿ã
æµæå ç±ããŠçŽ20ç§åŸã«1100ã1300âãšã§ããã
ã€ãã§çŽ1KWé»åã®é©åã§äžéšã¹ããªããããŒ
ã¿ãæ¥éå ç±ããããã®äžéšã¹ããªããããŒã¿ã
ãã®ç §å°ã§ãµã³ãã«ãæŽã«å ç±ãããš20ã40ç§åŸ
ã«Siãã€ã«ã ïŒïŒã®äžéšãšSiåºäœïŒïŒã®äžé¢ã®äž
éšãšãçãäžéšã¹ããªããããŒã¿ïŒïŒã®äžã«äœçœ®
ããçããŸãŒã³å ã§æº¶èãããã€ãã§ãã®ã¹ããª
ããããŒã¿ãçŽ0.5cmïŒç§ã®é床ã§ãµã³ãã«ïŒïŒ
ã®äžãæã§ç§»åãããããšãã§ããããã®é床ã¯
èçŒèŠ³å¯ã§ã溶èãŸãŒã³ãåäžé床ã§ãµã³ãã«ã
暪åãã«ååãªçšã«ãã€ãããã¹ãã§ãããã¹ã
ãªããããŒã¿ãšæº¶èãŸãŒã³ããµã³ãã«ã®é 端ã«é
ããæã«äž¡ããŒã¿ãžã®é»åãåãã 第ïŒïŒïŒå³ã®è£ 眮ã§ã¯ã¹ããªããããŒã¿ã¯ã¹ã
ã©ã€ã貫éè·¯ïŒïŒã«å¹³è¡ãªæ¹åã«èµ°æ»ããããå Ž
åã«ãã€ãŠã¯ã第ïŒå³ã«ç€ºãããåŠãåäžè²«éè·¯
ïŒïŒã«åçŽæ¹åã«èµ°æ»ãããŠé£ç¶ã·ãŒããäžæ¹å
ã«æé·ããåé¡ãé¿ããŠïŒã€ã®å¯Ÿåæé·ããã³ã
ã®äº€ããã«é¢é£ããããšãæãŸããããšãããã
第ïŒå³ã®è£ 眮ã§ã¯ãµã³ãã«ãäžéšããŒã¿ïŒå³ç€ºã
ããŠããªãïŒã«ããSiã®èç¹ã«è¿ã¥ãããã€ã
ã§ãåäžã¹ãã©ã€ã貫éè·¯ïŒïŒã§ã®æº¶èãã該貫
éè·¯ã«äžŠåããŠãããç¢å°æ¹åã«ç§»åããäžéšã
ãŒã¿ïŒïŒã§èªçºãããã¹ãã©ã€ã貫éè·¯ïŒïŒã§ã®
溶èãèªçºããã€ãã§å±€ïŒïŒã®åºåããšãã¿ãã·
ãŒæé·ããããŒã¿ïŒïŒããµã³ãã«ïŒïŒè¡šé¢ã暪å
ãéã«åæ¹åã«ç¶ããã 第ïŒå³ã®è£ 眮ã䜿ããšåæ¶äžã®çžåœé åã«ãã
ã€ãŠåäžé£ç¶çµ¶çžäœãçããããã¯ç©å±€åè·¯ã®ç
ç£ã«æå©ã§ãããæé·å±€ïŒïŒã®çµæ¶é åã¯åºäœïŒ
ïŒã®é åã§å®ãŸããäŸãã°ãåºäœïŒïŒãïŒ100ïŒ
å¹³é¢äžã«ãããªãã°å±€ïŒïŒã¯ïŒ100ïŒå¹³é¢äžã§é
åæé·ããã 第ïŒå³ã¯åèäŸãšããŠç€ºãå€éšçš®æ¶äœ¿çšäŸã瀺
ãããã®äŸã§ã¯çµ¶çžãã¹ã¯å±€ïŒïŒäžã«ã¹ãã©ã€ã
ïŒïŒã¯å¿ èŠãªããåºäœïŒïŒã¯æçš®ã«äœ¿çšãããªã
ã®ã§åæ¶åºäœã§ããå¿ èŠã¯ãªããéçµè³ªãå€æ¶è³ª
ã®ã·ãªã³ã³æã¯ã次åŸã®æŽ»æ§åå°äœå±€ãæ¯æãã
ã®ã«é©åœãªç©è³ªã®ãã¥ãã§ãããã å€ãã®è¯ãç¥ãããŠããæ段ã®ãã¥ããã«ãã
å€æ¶è³ªãéæ¶è³ªã®Siã®å±€ïŒïŒãSiO2å±€ïŒïŒè¡šé¢
äžã«åœ¢æããSiO2å±€ïŒïŒãSiå±€ïŒïŒã®äžé¢äžã«
圢æããŠåè¿°ã®åŠã湿最å€å±€ãšããŠåœ¹ç«ãŠããã
ãããSiO2ã®äžå±€ïŒïŒã®è¡šé¢äžã®äŸ¿å©ãªäœçœ®äŸ
ãã°ç«¯ã§å±€ïŒïŒã®äžéšãé€å»ããŠå±€ïŒïŒè¡šé¢äžã«
ãæç¶ç«¯éšïŒïŒãæ®ããåæ¶ã·ãªã³ã³ã®åœ¢ã®å€éš
çš®æ¶ïŒïŒãå±€ïŒïŒã®äžé¢äžã«é 眮ããŠåæç¶ç«¯éš
ïŒïŒã«äžéšéããã åè¿°æ æ§ãšåæ§ã«ãµã³ãã«ïŒïŒãäžéšã¹ããªã
ãããŒã¿ïŒå³ç€ºãããŠããªãïŒã§ã·ãªã³ã³èç¹è¿
ãã®æž©åºŠã«è¿å ç±ããã ã€ãã§äžéšã¹ããªããããŒã¿ïŒïŒãäœåãããŠ
ãµã³ãã«ïŒïŒããããŒã¿ïŒïŒé£æ¥ãŸãŒã³å ã§Siå±€
ïŒïŒã溶èããã枩床ãšããããã®ç«¯ã¯åæããŠ
ããã®ã§ããŒã¿ïŒïŒããã®èŒ»å°ãšãã«ã®ãŒå±€ïŒïŒ
äžã®Siå±€ã«å®¹æã«éãããŠå±€ïŒïŒã®æº¶èéå§ã容
æã«ãããã€ãã§ããŒã¿ããããŒã¿ããµã³ãã«ã®
ãã¥ãããçžäºã«ç§»åãããããšã«ããç¢å°æ¹å
ã«ãµã³ãã«ãè¶ããŠäžŠé²ãããããã®ãã溶èãŸ
ãŒã³ããµã³ãã«ã暪åã€ãŠç§»åããŠå±€ïŒïŒã®æº¶
èãåºåãçãããå±€ïŒïŒã¯å€éšçš®æ¶ïŒïŒããèª
å°ãããåçµæ¶ç¶æ ã§åºåããã å€éšçš®æ¶ã䜿ãã®ã§Siåºäœãåçµæ¶ã§ããå¿ èŠ
ã¯ãªããåŸã€ãŠã第ïŒïŒïŒïŒå³ã¯å€éšããã®æçš®
ã«ãããSiO2å±€ïŒïŒâ²çã®çµ¶çžå±€ã®è¡šé¢ã§ã®æšªæ¹
åãšãã¿ãã·ãŒæé·æ§é ã®å¥ã®åèäŸã瀺ãã第
ïŒå³ã®åèäŸã§ã¯çš®æ¶ïŒïŒãéæ¶è³ªSiå±€ïŒïŒâ²ã®
è¡šé¢ã«é 眮åŸã«æ¹¿æœ€å€å±€ïŒïŒãçš®æ¶äžã«åœ¢æãã
å šçš®æ¶ãã«ãã»ã«å°å ¥ã®åœ¢ãšããã第ïŒïŒå³ã§ã¯
éæ¶è³ªSiå±€ïŒïŒâ²ãšSiO2最æ»å€å±€ïŒïŒãšãå ±ã«ã
çš®æ¶ïŒïŒãSiO2絶çžåºäœïŒïŒâ²è¡šé¢ã«ä¹ããåŸã«
çš®æ¶ïŒïŒäžã«åœ¢æããã第ïŒïŒïŒïŒå³èšèŒã®ãµã³
ãã«ãã€ãã§ãåèšæ æ§ã«é¢é£ããŠèšèŒã®åŠãç±
åŠçã«ä»ããŠéæ¶è³ªSiå±€ïŒïŒâ²ããåæ¶ã®çš®æ¶ïŒ
ïŒãæçš®ããããšãã¿ãã·âã·ãªã³ã³å±€ã«å€æã
ãã 以äžã«èšèŒã®è£ 眮ã§ã¯åäžã®SiO2湿最å€å±€ã
䜿ã€ãŠããã第ïŒïŒå³ã«ç€ºãåèäŸã§ã¯CVDç
ã«ããçªåã·ãªã³ã³Si3N4å±€ïŒïŒãSiO2å±€ïŒïŒäž
ã«è¿œå 圢æãããä»ã®å šãŠã®ç¹ã«ãããŠãµã³ãã«
ïŒïŒã¯ç¬¬ïŒïŒ€å³ã®ãµã³ãã«ãšåäžã§ãããåæ§ã«
ç±åŠçããããè¿œå ãããSi3N4å±€ã¯SiO2åå±€ã«
æ¯ã¹ãŠè€åæ§é ç©ã®æ¹¿æœ€æ§ãæŽã«åŒ·åãããšæã
ããããã®è¿œå ã®Si3N4å±€ã¯ç¬¬ïŒïŒ€å³ã®åŠãSiO2
å±€äžé¢äžã«äœçœ®ãããããšãåãSiO2å±€ã®äžã«
Siå±€ïŒïŒãšé£æ¥ãããŠäœçœ®ãããããšãã§ããã ææãªãã°ãå Žåã«ãã€ãŠã¯ç¬¬ïŒïŒïœå³ïŒç¬¬ïŒ
ïŒå³äžã®éšæã«å¯Ÿå¿ããéšæã¯åäžæ°åã§ç€ºããŠ
ããïŒã«å³ç€ºã®åŠãSiO2絶çžãã¹ã¯ã®äžé¢ã«æ¹¿
最å€ã圢æãããšæãŸããããšããããäŸãã°ã
第ïŒïŒïœå³ã«ã¯åçµæ¶ç©è³ªãããªãã·ãªã³ã³åºäœ
ïŒïŒã瀺ãããããããäºé žåã·ãªã³ã³ãããªã
é žåç©è£œçµ¶çžãã¹ã¯ïŒïŒã圢æããããã®äºé žå
ã·ãªã³ã³è£œãã¹ã¯ïŒïŒã®äžé¢ã«ã¯çªåã·ãªã³ã³å±€
ã圢æãããããã¯éæ¶è³ªåã¯å€æ¶è³ªã®ã·ãªã³ã³
ã®å±€ïŒïŒããšãã¿ãã·ãŒçµæ¶å±€ã«å€æããéã®æ¹¿
最å€ãšããŠåœ¹ç«ãŠãããšãã§ããã çªåã·ãªã³ã³ã¯è¬åèžçãã¹ããã¿ãŒçã®è¯ã
ç¥ãããæ段ã®ãã¥ããã«ããå±€ïŒïŒäžã«åœ¢æã§
ããã éæ¶è³ªåã¯å€æ¶è³ªã®ã·ãªã³ã³å±€ïŒïŒã®äžé¢ã«å
è¿°ã®æ æ§ãšåæ§ã«ç¬¬ïŒã®äºé žåã·ãªã³ã³æ¹¿æœ€å€å±€
ã圢æãããã€ãã§ãµã³ãã«ã第ïŒïŒïœå³ã«ç€ºã
åŠãåè¿°ãšåæ§ã«ç±åŠçã«ä»ããŠãæçš®åºåã«èµ·
å ãã暪æ¹åãšãã¿ãã·ãŒæé·ã«ããã·ãªã³ã³åº
äœïŒïŒã®çµæ¶æ§é ã«ããéæ¶è³ªåã¯å€æ¶è³ªã®ã·ãª
ã³ã³å±€ïŒïŒããšãã¿ãã·ãŒã·ãªã³ã³å±€ã«å€æã
ãã æçš®åºåã«ããããŒã¿ãæããSiO2暪æ¹åãš
ãã¿ãã·ãŒã¯ç¬¬ïŒïŒïŒ¡ãã«å³ç€ºãããŠãããã
ãã«ãããå¹³é¢çã«ç€ºãããŠã¯ãããå®éã«ã¯è»ž
æ¹åæé·ãéå§ãããã¹ãã©ã€ãã«ããããªå¹³åŠ
åã圢æããåè¿°ã®æ æ§ãšã¯å¯Ÿç §çã«å¹³é¢ãšãã¿
ãã·ãŒæ§é ç©ãçæãããããã®æ æ§ã§ã¯ç¬¬ïŒïŒ
å³ã«ç€ºãããåŠãè¯ãç¥ãããæ段ã§çªåã·ãª
ã³ã³ã¹ãã©ã€ãïŒïŒãåçµæ¶ã·ãªã³ã³åºäœïŒïŒäž
ã«åœ¢æããããã€ãã§ãµã³ãã«ïŒïŒãç±é žåã«ä»
ããŠã第ïŒïŒïŒ¢å³ã«å³ç€ºã®åŠãSiåºäœïŒïŒäžã«
SiO2å±€ïŒïŒã圢æãããã€ãã§ã€ãªã³ããŒã ã
è¬åé£å»ã§Si3N4ãéžæçã«é£å»ããŠç¬¬ïŒïŒïŒ£å³
ã«ç€ºãããåŠãSiO2å±€ïŒïŒã®éã«ããåºãã®Si
ãããªãæºïŒïŒã圢æãããã€ãã§ãµã³ãã«ïŒïŒ
ãè¡šé¢é£å»ã«ä»ããŠãã®è¡šé¢ã第ïŒïŒïŒ€å³ã«ç€ºã
ããåŠãå¹³åŠã«ãªãè¿é žåç©ãé€ããæåŸã«ã第
ïŒïŒïŒ¥å³ã«å³ç€ºã®åŠããéæ¶è³ªSiå±€ïŒïŒããµã³ã
ã«ïŒïŒäžã«åœ¢æããSiO2ãã€ããå±€ïŒïŒäžã«åœ¢
æããŠç¬¬ïŒïŒïŒ¥å³ã«ç€ºãéãã®å¹³é¢æ§é äœãäœã
åºããããã§ãµã³ãã«ãåè¿°ã®åŠãç±åŠçããŠé
æ¶è³ªSiå±€ïŒïŒããšãã¿ãã·ãŒã«å€æããæºåãå®
äºããããšã«ãªãã 第ïŒïŒå³ã®æ¹æ³ãè£ çœ®ã§æäŸãããå¹³é¢ãšãã¿
ãã·ãŒæ§é äœã®å©ç¹ã«å ããåçµæ¶æ§é äœçé¢ã¯
SiO2å±€ïŒïŒã®äžé¢ãšå ±å»¶ãªã®ã§æº¶èãªSiO2å±€ïŒ
ïŒã®äžé¢ã«éããã°ããããšãç¹èšãããããã
ãã¯ãSiåºäœçé¢ãSiO2å±€ïŒïŒã®åºãšå ±å»¶ã§ã
ã第ïŒå³ã®æ æ§ãšã¯å¯Ÿç §çã§ãããæŽã«ãæé·ã¯
第ïŒïŒ€å³ã®ããŒã¿ãæããé¢ã§ã¯ãªãå¹³é¢ã§çã
ãã®ã§çµæ¶æ¬ æãçããåŸåã¯å°ãªããªãããšã
ããã 第ïŒïŒïŒ¢å³ã¯æ¬æ现æžèšèŒã®æ¹æ³ã§è£œé ããã
SiO2åºäœè¡šé¢ã«æ§æãããïŒå åå°äœè£ 眮ã®äž
éšç¥å³ã瀺ãã第ïŒïŒïŒ¢å³ã®è£ 眮ã¯LOCOSé žå
ç©ã§çµ¶çžãããŠããMOSFETã§ããã
MOSFETã¯éå±é žåç©åå°äœé»çå¹æãã©ã³ãž
ã¹ã¿ãæå³ãããLOCOSã¯ã·ãªã³ã³ã®å±æé žå
ãæå³ãããMOSFETã¯è¯ãç¥ãããè£ çœ®ã§ã
ããã¢ã¡ãªã«ãã®ä»ã§å€§éã«äœãããŠããã 第ïŒïŒïŒ¡å³ã¯æ¬çºæã«ããMOSFETã®åœ¢ææ³
ã瀺ããŠããããŸãåçµæ¶ã·ãªã³ã³ãããªãã·ãª
ã³ã³åºäœïŒïŒãé žåããŠäºé žåã·ãªã³ã³ãã¹ã¯ïŒ
ïŒã圢æãããã€ãã§éæ¶è³ªãå€æ¶è³ªã®ã·ãªã³ã³
æïŒïŒãSiO2ãã¹ã¯ïŒïŒäžã«åœ¢æããSiO2ãã
ãªã湿最å€å±€ïŒïŒã第ïŒå±€ïŒïŒäžã«åœ¢æãããã€
ãã§åèšæ æ§ã«ããéæ¶è³ªåã¯å€æ¶è³ªã®å±€ïŒïŒã
ç±åŠçã«ããå®è³ªäžãšãã¿ãã·ãŒã®å±€å³ã¡èïŒïŒ
ã«å€æãããã€ãã§SiO2湿最å€å±€ãäŸãã°è¬å
é£å»ã§é€ãã ã€ãã§ã第ïŒïŒïŒ¢å³ã«ç€ºãããåŠããè£ çœ®ã®æŽ»
æ§é åïŒïŒãè¯ãç¥ãããæ¹æ³ã§åœ¢æããã
LOCOSé žåç©ïŒïŒã§ä»æŽ»æ§é åïŒå³ç€ºãããŠã
ãªãïŒããåé¢ãããã€ãã§æŽ»æ§Siå±€ïŒïŒã®è¡šé¢
ã«ç±é žåç©å±€ïŒïŒã圢æãããããªã·ãªã³ã³ã²ãŒ
ãïŒïŒãè¬åèžçã«ããé žåç©å±€ïŒïŒäžã«åœ¢æã
ãããã®ã²ãŒãïŒïŒã¯åçå¹³æ¿ãšé£å»æè¡ã§å®ã
ããããã€ãã§æŽ»æ§é åïŒïŒã®ãœãŒã¹é åïŒïŒãš
ãã¬ã€ã³é åïŒïŒãšãžã®ã€ãªã³ç§»å ¥ã«ããé©åœãª
ããŒãã³ããå°å ¥ããããã®çªãã²ãŒããæãã
é žåç©å±€ïŒïŒã«éãããæåŸã«ã¢ã«ãããŠã 被èŠ
ã§ãœãŒã¹éšæãã²ãŒãéšæããã¬ã€ã³éšæãžã®æ¥
ç¹ã圢æããã 第ïŒïŒïŒ¢å³ã®è£ 眮ã¯æ¬æ现æžé瀺ã®æ¹æ³ã䜿ã
圢æã§ããå€ãã®ã¿ã€ãã®ç©å±€åè·¯å³ã¡åå°äœæ§
é ç©ã®ïŒäŸã«ãããªãããšã匷調ããã 第ïŒïŒãïŒïŒå³ã«ã¯ãåçµæ¶åãã¹ãå±€ã溶è
枩床é©çšéå§åŸã¯çš®æ¶ãšç©ççã«æ¥è§ŠããŠããå¿
èŠã®ãªãç¹ã§åèšæ æ§ãšææã«ç°ãªãæ¬çºæã®å¥
æ æ§ãèšèŒãããŠãããæ¬çºæã®ãã®æ æ§ã§ã¯æ¹
æ³ã¯ç¬¬ïŒïŒå³ã«ç€ºãããåŠããäžè¬ã«æ¬¡ã«åŠãèš
èŒã§ããã ãŸãçµæ¶åºäœã圢æããããã®çµæ¶åºäœã¯ç¬¬ïŒ
å³ã®ïŒïŒã§ç€ºãããåèšåçµæ¶åºäœã«å®è³ªäžäŒŒãŠ
ããŠããã ã€ãã§SiO2çã®çµ¶çžå±€ãåºäœäžé¢å šäœäžã«åœ¢
æãããåèšç¬¬ïŒïŒ¢å³ã®å±€ïŒïŒã®å Žåãšã¯ç°ãªã
ãã®çµ¶çžå±€ã«ã¯è¬åé£å»ã䜿ã貫éè·¯ãæäŸãã
å¿ èŠã¯ãªãããã®çµ¶çžç¬¬ïŒå±€ãåºäœäžã«åœ¢æåŸã«
å€æ¶è³ªåã¯éæ¶è³ªæã§ã§ãã第ïŒå±€ãè¯ãç¥ãã
ãæ段ã§çµ¶çžå±€äžã«åœ¢æããããã®ç¬¬ïŒå±€ãæ¬çº
æã®æ瀺ã«ããåçµæ¶ãããŠãšãã¿ãã·ãŒæé·ã
圢æãããå±€ã§ããããã®å±€ã¯äŸãã°ã第ïŒïŒ£å³
ã«é¢é£ããŠè¿°ã¹ãå±€ïŒïŒã®åŠãéæ¶è³ªã·ãªã³ã³ã§
ãããã€ãã§ç¬¬ïŒå±€äžã«ã第ïŒå±€ããé«ã溶èæž©
床ãæã€ããšã奜ãŸããææã§ã§ãã第ïŒãïŒå±€
ã圢æãããããã第ïŒãïŒå±€ã¯åè¿°ã®åŠã湿最
å€å±€ã§ãããSiO2å±€ããã«ç¶ãSi3N4å±€ã§æ§æã
ãããæçµçµæã¯ç¬¬ïŒïŒå³ãšé¢é£ãããŠåè¿°ãã
ãã®ãšåæ§ãªæ§é äœã§ããããSiO2絶çžå±€ïŒïŒ
ã«è²«éè·¯ã¯ãªãã 次工çšã¯ç¬¬ïŒãïŒãïŒãïŒå±€ãéã€ãŠåºäœã«é
ãã貫éè·¯ãæ§æããããã§ãããããã¯ãµã³ã
ã«ãåºäœã«éããè¿æ©æ¢°çã«ãããããšã«ããè¡
ãªããšå¥œãŸãããæ§æã容æãªã®ã§å¥œãŸããæ æ§
ã§ã¯æ©æ¢°çãããã䜿ã€ããããããæ¬çºæã¯ã
ã®ããã«éå®ããããã®ã§ã¯ãªãããã¹ãã³ã°ã
é£å»ãã¬ãŒã¶ãŒããããã®ä»ã®ä»è²«é路圢ææ段
ã䜿çšã§ããã ã€ãã§ãµã³ãã«ãã第ïŒå±€ã溶èãåºåããæž©
床ã«ä»ããŠãåæ¶æã§ã§ãã第ïŒå±€ã«ãã€ãŠã®çµ
æ¶æ§é ç©ã®ãšãã¿ãã·ãŒæé·ãåºäœãžã®éå£ã§æšª
æ¹åãžéå§ãããã 第ïŒïŒå³ã«ç€ºãããåŠããå å·¥è£ çœ®ã¯ç¬¬ïŒå³ãš
é¢é£ãããŠè¿°ã¹ããã®ãšéåžžã«è¯ã䌌ãŠããã第
ïŒïŒå³ã«ç€ºãéãã®æé¢ã®åœ¢ãšæ§æãæã¡ã第ïŒ
ïŒå³ã®æ¹æ³ã§æ§æããããŠãšãã¢ãŒãäžéšã¹ããª
ããããŒã¿ïŒïŒã«ä¹ããããã®äžéšããŒã¿ããã
æ段ïŒå³ç€ºãããŠããªãïŒã§äœåãããŠã·ãªã³ã³
èç¹ã«è¿ã枩床ãšããã ã€ãã§å¯åæ§ã®äžéšã¹ããªããããŒã¿ïŒïŒãè¯
ãç¥ãããæ段ïŒå³ç€ºãããŠããªãïŒã§äœåãã
ãŠãSi3N4å±€ãSiO2å±€ã®äžã®ã·ãªã³ã³ïŒïŒã®ã¹ã
ãªãããŸãŒã³ïŒïŒã®æº¶èãèªçºããã ã€ãã§äžéšããŒã¿ïŒïŒããµã³ãã«ïŒïŒäžé¢ãé
ã€ãŠäžŠé²ãããŠãããéšåïŒïŒïŒåã¯ãã®åã§æº¶
èãŸãŒã³ïŒïŒãããŒã¿ïŒïŒãšäžç·ã«ç§»åãããŠãŸ
ãŒã³æº¶èã€ãã§éæ¶è³ªã·ãªã³ã³å±€ïŒïŒã®åºåãèª
çºããŠæšªæ¹åãšãã¿ãã·ãŒæé·ãšãåæ¶æãžã®å±€
ïŒïŒã®å€æãéæããã 奜ãŸããã¯ãå ç±è£ 眮ãåºå ¥å£ã®åãã€ãã¹ã
ã³ã¬ã¹ã¹ããŒã«å®€å ã«é 眮ããããã®å®€ã¯æ°Žå·ã
ããšå¥œãŸãããäžéšã°ã©ãã¢ã€ãããŒã¿ïŒïŒã¯å ž
åçã«ã¯çŽïŒã€ã³ãïŒ17.78cmïŒé·ãïŒã€ã³ã
ïŒ10.16cmïŒå¹ ã0.04ã€ã³ãïŒ0.1016cmïŒåã§ããã
äžéšããŒã¿ã¯çŽ4.5ã€ã³ãïŒ11.43cmïŒé·ã0.04ã€
ã³ãïŒ0.1016cmïŒå¹ ã0.1ã€ã³ãïŒ0.254cmïŒåã§
ããããŠãšãã¢ãŒã¯çŽåŸïŒãïŒã€ã³ãïŒ5.08ã
7.62cmïŒãåãçŽ0.015ã€ã³ãïŒ0.0381cmïŒã§ããã
çŽåŸãïŒåã¯ïŒã€ã³ãïŒ5.08cmåã¯7.62cmïŒã§ã
äžéšããŒã¿ïŒïŒã®äžå¿ã§ã®æ·±ããçŽ0.01ã€ã³ã
ïŒ0.0254cmïŒã§ããç°åœ¢å¹æå ã«ããïŒç¬¬ïŒïŒå³
åç §ïŒãäžéšããŒã¿ã¯ãŠãšãã¢ãŒïŒïŒã®äžé¢ãã
çŽïŒmmé«ãäœçœ®ãããã¹ãã§ããã ã³ã³ããŠãŒã¿ã³ã³ãããŒã«ã¢ãŒã¿ïŒå³ç€ºãããŠ
ããªãïŒã§äžéšããŒã¿ããŠãšãã¢ãŒã暪åã€ãŠèµ°
æ»ããããäž¡ããŒã¿ã¯ãã€ã¯ãããã»ããµã§ã¢ã
ã¿ãŒãã³ã³ãããŒã«ãããïŒã300Aè¿ã®äº€æµã§
æµæå ç±ãããããŠãšãã¢ãŒã®äžå¿ã䞡端ã®æž©åºŠ
ã¯äžéšããŒã¿åå ¥ã®è¯ãç¥ãããç±é»å¯Ÿã§ã¢ãã¿
ãŒãããã·ãªã³ã³è£œãŠãšã¢ãŒïŒïŒã¯ç¬¬ïŒïŒå³ã®æ
é¢å³ã«ç€ºãããåŠããæ°åïŒïŒã§ç€ºãããçŽ1ÎŒ
ïœåã®ç±SiO2å±€ã§äžã被ãããåæ¶ïŒ100ïŒãŠãš
ãã¢10ã§ããã 0.5ÎŒïœåã®ã·ãªã³ã³èïŒïŒãè¬åèžçã§SiO2
å±€ãSiå±€ã®å šäžé¢ã«ä»çãããã ã€ãã§ç¡é žã·ãªã³ã³ãšSiO2ã®ã«ãã»ã«å°å ¥äœ
ãè¯ãç¥ãããæ段ã§ã·ãªã³ã³å±€ïŒïŒäžã«ä»çã
ãããSiO2å±€ã¯ïŒïŒãSi3N4å±€ã¯ïŒïŒã§ç€ºãã
ããåè¿°ã®åŠããŠãšãã¢ãŒæ§æåŸã«åæ¶åºäœïŒïŒ
ã«è³ã貫éè·¯ã奜ãŸããã¯ã第ïŒïŒïŒïŒïŒå³ã®ïŒ
ïŒïŒã§ç€ºãããåŠããŠãšãã¢ãŒãæ©æ¢°çã«ããã
ããšã«ããäœãããã®ãããã¯ç¬¬ïŒïŒå³ã«ç€ºãã
ãåŠãïŒ100ïŒå¹³åŠéšã«å¹³è¡ã§ããæã¯ïŒ100ïŒå¹³
é¢ã«ãã€ãŠå¹³åŠéšãš45ãã®è§åºŠã«é 眮ããŠãããã
ãã®ãããã¯ç¬¬ïŒïŒå³ã«ç€ºãããåŠãæé¢åœ¢ç¶ã
æã¡ãæ·±ããçŽïŒã8ÎŒïœã§ããã ãã®ããã貫éè·¯ã«ããããŸãŒã³æº¶èãããã
貫éè·¯åã«ãŠãšãã¢ãŒã®è¡šé¢ããå§ãŸãéãåæ¶
ã·ãªã³ã³åºäœïŒïŒãéæ¶è³ªã·ãªã³ã³å±€ïŒïŒã®åçµ
æ¶ã«äŸ¿å©ãªçš®æ¶ãšãªãããšãå¯èœã«ãªããæèšã
ãã°ããŸãŒã³æº¶èã¯ããã貫éè·¯ïŒïŒïŒã«éãã
åã«éå§ãããã°ãªããªããã€ãã§ã溶èãŸãŒã³
ïŒïŒãããã貫éè·¯ïŒïŒïŒã«éãããããã§çã
ãã«ã€ããŠäžå®éãããã貫éè·¯äžãäžéæµåã
ãŠãåºåã«ããã·ãªã³ã³åºäœïŒïŒãã·ãªã³ã³èïŒ
ïŒãšçµåãããããã貫éè·¯ïŒïŒïŒã®æ§ã ãªåœ¢ç¶
寞æ³ã䜿çšã§ããããšãããã€ãŠãããäŸãã°ãŠ
ãšãã¢ãŒã®çžãå²ãåç°åœ¢ãããã«ãããŠãšãã¢
ãŒã®ãã倧éšåã«æçš®ããããšãå¯èœã§ãããã
ã®æçš®æè¡ã䜿ãã°ïŒã€ã³ã2ïŒ25.8cm2ïŒãè¶ãã
暪æ¹åã§ãšãã¿ãã·ãŒã®æçš®åºåèãåŸããã倧
ããªè§åºŠãæã€ç²åãããªãå¢çããªãã 以äžãŸãšãããšãçŽåŸãå°ããšãïŒã€ã³ã
ïŒ7.62cmïŒã®SiO2被èŠã·ãªã³ã³è£œãŠãšãã¢ãŒäžã«
Sièãã«ãŒãã³ã§å¶åŸ¡å¯èœãªæ¹åŒã§åçµæ¶ããã
ããã®æ¹æ³ãšè£ 眮ã瀺ãããŠããã 第ïŒïŒãïŒïŒå³ã®æ¹æ³ãšè£ 眮ã¯ã第ïŒïŒïŒ¡ã
ãåç §ããŠèšèŒããè€éãªããŒã¿åœ¢ææ³ã䜿ããª
ããŠãçææ§é äœãå¹³é¢ã§ãããšããå©ç¹ãæ
ã€ãæŽã«ããããæè¡ã䜿ããªãã°ã第ïŒïŒ¡ã
ã®è£ 眮ã§ã¯å¿ èŠãšãããåçå¹³æ¿ã®å¿ èŠãé¿ãã
ããã以åã®æ æ§ã«ãããŠã¯æŽ»æ§Siãšãã¿ãã·ãŒ
å±€ïŒïŒåœ¢æåŸã§æ¬äœãæŽã«å å·¥ããåã«æ¹¿æœ€å€å±€
ïŒïŒïŒïŒïŒãé£å»ã§é€ãããšã奜ãŸããããšãã
ãããšãç¹èšããã åè¿°ã®åŠããèšèŒããæ æ§ã®æ¬çºæã®æ¹æ³ãè£
眮ãã·ãªã³ã³ã®å Žåã«éå®ãããªããäŸãã°ãå
ã¬ãªãŠã ãæ¬æ¹æ³ã§éæ¶è³ªåã¯å€æ¶è³ªã®ç¶æ ãã
ãšãã¿ãã·ãŒç¶æ ã«å€æã§ããããåã¬ãªãŠã ã«
é©åœãªæ¹¿æœ€å€ã®èå³ã¡å±€ã¯äºé žåã·ãªã³ã³SiO2ã
çªåã·ãªã³ã³Si3N4ãã¿ã³ã°ã¹ãã³åã¯ã¢ãªãã
ã³ã§ãããåæ§ã«ã²ã«ãããŠã ãåèšæ¹æ³ã§éæ¶
質ãå€æ¶è³ªã®ç¶æ ãããšãã¿ãã·ãŒçµæ¶èã«å€æ
ã§ãããã²ã«ãããŠã ã®å Žåã¯é©åœãªæ¹¿æœ€å€ã¯çª
åã·ãªã³ã³ãã¢ãªããã³åã¯ã¿ã³ã°ã¹ãã³ã§ã
ãã åãã·ãªã³ã³ã®å Žåã«åœ¹ç«ã€åèšæ¹¿æœ€å€ã®ä»
ã«ãã·ãªã³ã³ãå€æ¶è ãããšãã¿ãã·ãŒèã«å€æ
ããã®ã«ççŽ ãã·ãªã³ã³ã«ãŒãã€ãã湿最å€ãšã
ãŠåœ¹ç«ã€ããšãçºèŠãããã äžè¬ã«ãå€æäžã«æº¶èãé¿ããããã«ååé«ã
èç¹ãæã¡ãå€æ察象èãšã®çžäºäœçšã¯å°ããå
èšå®çŸ©éãã®â湿最å€âãšããŠåœ¹ç«ã€ååãªçžäº
äœçšãæã€ãã®ãé©åœãªæ¹¿æœ€å€ã§ããããšãçºèŠ
ãããã æ¬æ现æžã«æèšããæ æ§ã®åçç©ã¯å€æ°ããã
ãããåçç©ãè«æ±ã®ç¯å²ã«å«ãŸãããäŸãã°ã
å€ãã®äŸã§éæ¶è³ªãå€æ¶è³ªã®èå³ã¡å±€ãè¿°ã¹ãã
ãŠãããçšèªâèâãšâå±€âã¯çžäºå€æããŠäœ¿çš
ã§ãããåãçš®æ¶æãåºäœã®å šäœãå ããå¿ èŠã¯
ãªããçµæ¶åãããèå³ã¡å±€ãšæ¥è§Šããéšåã®ã¿
ãæ§æããã°ãããæ£ã«ãçš®æ¶ã¯åºäœã®äžéšã§ã
ãå¿ èŠã¯ãªããå±æç±åŠçã«ããçã®å±æçµæ¶å
ã«ããèäžã«åœ¢æã§ãããæŽã«ãçš®æ¶æã¯çµæ¶å
ãã¹ãç©è³ªãšåäžçµæã§ããå¿ èŠã¯ãªããäŸã
ã°ãéæ¶è³ªã²ã«ãããŠã ã«åæ¶ã·ãªã³ã³ãæçš®ã§
ããã æŽã«ãæé·ã¯ã¹ãã©ã€ã貫éè·¯ã«å¯Ÿããç±æºã®
åçŽã®åãã«åºããŠæšªæ¹åã«é²ããšç€ºãããŠãã
ããå Žåã«ãã€ãŠã¯ãã®å ç±éšæãã¹ãã©ã€ã貫
éè·¯ã«æ亀ããæ¹åã§ç§»åãããŠãæå©ã§ããã
以äžã«è¿°ã¹ãå ç±éšæã¯ã°ã©ãã¢ã€ãã§æ§æãã
ãŠããããé»åããŒã ãã¬ãŒã¶ãŒããŒã ãã®ä»ã®
茻å°æºã䜿çšã§ããã
Claims (1)
- ãç¹èš±è«æ±ã®ç¯å²ã ïŒ äžé絶çžå±€ã«ãã€ãŠèŠãããå°ãªããšãäžã€
ã®åçµæ¶ææãããªãé åãæããåºäœã®äžã«ã
å±€ããªããåå°äœæ§é ã圢æããæ¹æ³ã§ãã€ãŠã åèšäžé絶çžå±€ã«ãã€ãŠåèšåçµæ¶ææé åã
ãé¢éãããŠã¯ãããåèšåºäœã®äžãèŠãããã«
éæ¶è³ªåã¯å€æ¶è³ªã®åå°äœææå±€ã圢æãã åèšåå°äœææå±€ã圢æããåŸã«ãåèšåå°äœ
ææå±€ãåèšåçµæ¶ææã«ãããããã«åèšäžé
絶çžå±€ã«å°ãªããšãäžã€ã®éå£ãèšãã åèšåå°äœææå±€åã³äžé絶çžå±€ã®äžãèŠãã
ãã«å¥ã®å±€ãä»çããããã®ãšãåèšå¥ã®å±€ã¯ã
åèšåå°äœææã®ãã€æº¶èæã«æº¶çã圢æããåŸ
åã劚害ãã¹ã湿最å€ãšããŠåãææãããªãã åèšéå£ã«è¿ãåå°äœææå±€ã®å°ãªããšãäžéš
åãå ç±ããŠããã®éšåã溶èãäžã€ãã®æº¶èã
ãéšåã®åèšåçµæ¶ææãããªãé åãžã®æµãã
éæããããã«ãã€ãŠåèšåå°äœææå±€ãšåèšå
çµæ¶ææãããªãé åãšã®é åæ¥è§Šãéæãã åèšéå£ã«é£æ¥ããåå°äœææå±€ã®æº¶èããéš
åããåèšåçµæ¶ææãããªãé åã«ãã€ãŠæçš®
ããã倧ããªçµæ¶ç²ã®å®è³ªçã«åçµæ¶ã®ææã«å
çµæ¶ãããã¹ããåèšéå£ã«é£æ¥ããåå°äœææ
å±€ã®æº¶èããéšåãåºåããããããšãããªãæ¹
æ³ã ïŒ å°ãªããšãäžã€ã®éå£ããåèšåå°äœææå±€
ãšåèšå¥ã®å±€ãšã®äž¡æ¹ã貫éããŠå»¶åšããããã«
èšããããã第ïŒè«æ±é èšèŒã®æ¹æ³ã ïŒ ãã®äžéšãåçµæ¶ã§ããäžã€åèšåçµæ¶ææ
ãããªãé åãæ§æããåºäœã䜿çšããã絶çžæ
æãåèšäžé絶çžå±€ãšããŠåèšåºäœäžã«ä»çã
ããåèšåå°äœææãåèšçµ¶çžå±€äžã«ä»çããã
åèšåºäœã®åçµæ¶ææãããªãé åã®çµæ¶å床
ã¯ãåèšæº¶èããåå°äœææã®æåçµæ¶åãéæ
ãããã«ãã€ãŠæå®ã®é åãæãã倧ããªçµæ¶ç²
ã§å®è³ªçã«åçµæ¶ã®å±€ãåŸã¹ãéžæãããã第ïŒ
è«æ±é èšèŒã®æ¹æ³ã ïŒ ããããåèšå¥ã®å±€ã圢æãããææãåèš
åå°äœææããé«ãèç¹ãæããåèšå ç±éçš
ããåèšåå°äœå±€ã溶èãããåèšå¥ã®å±€ã¯æº¶è
ããªãããã«ãªãããã第ïŒè«æ±é èšèŒã®æ¹æ³ã ïŒ åèšå¥ã®å±€ã®é£æ¥ããŠæŽã«å¥ã®å±€ã圢æã
ãã該æŽã«å¥ã®å±€ã¯åèšåå°äœææã®ããã®æ¹¿æœ€
å€ãšããŠåãå¥ã®ææãããªãã第ïŒè«æ±é èšèŒ
ã®æ¹æ³ã ïŒ ããããåèšå¥ã®å±€ã圢æãããææåã³å
èšæŽã«å¥ã®å±€ã圢æãããææããåèšåå°äœæ
æãããé«ãèç¹ãæããåèšå ç±éçšããåèš
åå°äœææå±€ã溶èãããåèšå¥ã®å±€åã³åèšæŽ
ã«å¥ã®å±€ã¯æº¶èããªãããã«ãªãããã第ïŒè«æ±
é èšèŒã®æ¹æ³ã ïŒ åèšåºäœèªäœãåçµæ¶ã§ããã第ïŒè«æ±é èš
èŒã®æ¹æ³ã ïŒ åèšäžé絶çžå±€ãSiO2ãããªããåèšåå°
äœææå±€ãä»çSiã§ãããåèšå¥ã®å±€ãSiO2ã§
ãããåèšåºäœãåçµæ¶Siã§ããã第ïŒè«æ±é èš
èŒã®æ¹æ³ã ïŒ åèšå¥ã®å±€ãåèšåºåéçšã®åŸã«é€å»ãã
ãã第ïŒè«æ±é èšèŒã®æ¹æ³ã ïŒïŒ åèšåºäœãSiã§ãããåèšåå°äœææå±€ã
Siã§ãããåèšå¥ã®å±€åã³åèšæŽã«å¥ã®å±€ã
SiO2ãSi3N4ãåã³SiCããéžæãããããã®
ã§ããã第ïŒåã¯ç¬¬ïŒè«æ±é èšèŒã®æ¹æ³ã ïŒïŒ 第ïŒã®ããŒã¿ã䜿çšããŠåèšåºäœãåèšå
å°äœææå±€ã®èç¹ããè¥å¹²äœã枩床ãŸã§äžããå
èšéå£ã«å ç«ã€ãŠããé åããéå§ããŠåèšåºäœ
ã®è¡šé¢ã暪åã€ãŠç¬¬ïŒã®ããŒã¿ã移åãããŠãå
èšåå°äœå±€å ã®ææé åããã®èç¹ãšããããã
溶èããé åããã®å±€ã«æ²¿ã€ãŠç§»åãããŠæçš®åº
åã«ãã€ãŠåèšåçµæ¶é åããåèšåå°äœææã®
暪æ¹åãšãã¿ãã·ã€ã«æé·ãéæããã第ïŒè«æ±
é èšèŒã®æ¹æ³ã ïŒïŒ åèšéå£ãåèšåºäœäžã«æšªãããå šãŠã®å±€
ã貫éããŠåœ¢æãããã第ïŒè«æ±é èšèŒã®æ¹æ³ã ãæè¡åéã æ¬çºæã¯ææåéã«é¢ãããã詳现ã«ã¯ãã·ãŒ
ãç¶ã®åå°äœææçã®éæ¶è³ªåã¯å€æ¶è³ªã®ææã
ã·ãŒãç¶ã®å®è³ªäžåæ¶ã®åå°äœææã«è»¢åããã
ãšã«é¢ããã ãèæ¯æè¡ã çŸåšã®æè¡ã®å€ãã¯åºç¶åºäœè¡šé¢ã«åºäœèèã
䜿ã€ãŠããããããèèã®ä»çã«ã¯ç±èžçºãDC
ã¹ããã¿ãŒãγfã¹ããã¿ãŒãã€ãªã³ããŒã ä»çã
è¬åèžçãã¡ãããååããŒã ä»çã液çžããã®
ä»ççãå€æ°ã®æ¹æ³ã䜿çšãããŠããã èèæ§é ã¯éæ¶è³ªïŒå³ã¡ãèååã¯ãããªãçµ
æ¶ç§©åºã«ãé åãããŠããªãïŒãå€æ¶è³ªïŒå³ã¡ã
èã¯å€ãã®å°é åããæ§æãããåé åã§ã¯åå
ã¯èŠåæ£ããçµæ¶ç§©åºã§é åããŠããããçµæ¶è»ž
çžäºã¯äžåã§ã¯ãªãïŒã奜ãŸããé åïŒå³ã¡èã¯
å€ãã®å°é åãããªããå€é åã§ååã¯èŠåæ£ã
ãçµæ¶ç§©åºã«é åãã該é åã®å€§å€æ°ã®çµæ¶è»žã®
ïŒã€ä»¥äžãå¹³è¡ã§ããïŒããšãã¿ãã·ãŒïŒå³ã¡è
ã¯äž»ãšããŠåçµæ¶é åãããŠããïŒã®ãã¥ãã§ã
ããããšãã¿ãã·ãŒå³ã¡åæ¶ã®èã¯å¥œãŸããé å
ã®äžç¹åã§ãããå°é åã®å šãŠã®å¯Ÿå¿çµæ¶è»žãæ¬
質çã«åäžæ¹åã«é åããŠãããèèã¯åºäœãšå
äžç©è³ªïŒå³ã¡åäžã®å çŽ ãååç©ïŒã§ãããã
åãååŠçµæãå¥ã§ããããèããšãã¿ãã·ãŒãª
ãåè ã®å Žåãâãã¢ãšãã¿ãã·ãŒâãåŸè ã®å Ž
åãâããããšãã¿ãã·ãŒâãšåŒã¶ã å€ãã®åºå®é»åããã€ã¹ã§ã¯ãã®æŽ»æ§å®¹éã¯è
ãã·ãŒããèåã¯å±€ã®åœ¢ã®æ¶è³ªåå°äœææïŒåæ¶
ãéæ¶è³ªã奜ãŸããïŒå ã«ããããã®æŽ»æ§å®¹éã¯
絶çžåºäœäžã«åœ¢æããããããã¯ç¹ã«ããåã¬ãª
ãŠã ãã·ãªã³ã³ãã²ã«ãããŠã ããªã³åã€ã³ãžãŠ
ã ããã«ã«åã«ãããŠã çã®åå°äœãã圢æãã
ãéç©åè·¯ã®å Žåã«çå®ã§ãããçŸåšè¿ã®ããã
ããã€ã¹ã®æ§ææè¡ã§ã¯äž»ãšããŠãµãã¢ã€ã€çã®
é«çŽåºŠã®åçµæ¶ææã®æ¯èŒçåãåºäœã®è¡šé¢ãã
ã®è¬åèžçã«ããçµæ¶äœã®ã·ãŒãããã€ã«ã ãæ
é·ãããå¿ èŠããããåã·ãŒã補é ã®ããã«ãã
ãåºäœã䜿ããšã·ãŒã補é ã³ã¹ããç°åžžã«é«ãŸã
åŸåããããæŽã«ããããŠåœ¢æããããšãã¿ãã·
ãŒã®ã·ãŒãããã€ã«ã ã®æ¬ é¥å¯åºŠãé«ãããµãã¢
ã€ã€ã®èªé»çãé«ãã®ã§åŸãããããã€ã¹ã®æ§èœ
ã¯å¶éãããã å¥æ³ã§ã¯ãµãã¢ã€ã€ã溶èã·ãªã«ïŒSiO2ïŒäž
ã«åãã€ãŠä»çãããSiçã®åå°äœææã®ç¡å®åœ¢
åã¯å€æ¶è³ªã®ã·ãŒãåã¯ãã€ã«ã ãèµ°æ»ã¬ãŒã¶ãŒ
ããŒã ã䜿ã€ãŠå ç±ããŠå€§ç²ã®ã·ãŒãåã¯ãã€ã«
ã ã圢æããŠãããäŸãã°ç±³åœç¹èš±4059461å·å ¬
å ±ãåç §ããããã50ãã¯ãã³æªæºã®å°ç²åã¯ã
ã®æ¹æ³ã§åŸãããèãšããŠSiO2äžã«éããæã«
äºè£ãçããåŸåãããããµãã¢ã€ã€ã«éããæ
ã«ã¯çžäºäœçšããŠå£åããã ãšãã¿ãã·ãŒèæé·ã«é¢ããæè¿ã®çºæã¯ãã·
ãªã³ã³èäžã«SiO2ã®èå³ã¡âãã€ããâãéã
ãã°ã©ããªãšãã¿ãã·ãŒã«ããéæ¶è³ªã·ãªã³ã³ã
ã·ãªã³ã³ã¢ã¶ã€ã¯èã«å€æããããšã«é¢ããã
1980幎ïŒæïŒæ¥çºè¡ã®Appl.Phys.Lett.37(5)äžã®
M.W.GeisãD.A.AntoniadisãD.J.Silversmithã
R.W.MountâainãMenryI.Smithå ±èã®è«æ
âSilcon Graâphoepitaxy Using ïœ Stripâ
Heater Ovenâã«èšèŒãããŠããããã®æ¹æ³ã¯
1980幎ïŒæ25æ¥åºé¡ã®âGraphoepitaxy by
Encapsulationâãšããå称ã®ã¢ã¡ãªã«ç¹èš±ç¬¬
181102å·åºé¡ã®æ现æžã«ãèšèŒãããŠããã ã°ã©ããªãšãã¿ãã·ãŒæ³ã§ã¯åºäœè¡šé¢äžã«å¹Ÿäœ
æš¡æ§ã®äººå·¥ã®è¡šé¢ã¬ãªãŒã段差åã¯ç¹ç¶æ¬ æéšã
ãããšäœã€ãŠåºäœè¡šé¢äžã§ã®èã®åœ¢æãæé·ãæ
å®æ¹æ³ã§å¶åŸ¡ããå¿ èŠãããããã®å¹Ÿäœæš¡æ§ã¯äž
è¬ã«ã¯ç°¡åãªæ Œåãç²åãé åãããŠæå®æ¹æ³ã§
çµæ¶æé·ãä¿é²ããããã®ã§ããã ã°ã©ããªãšãã¿ãã·ãŒæ³ã§ã¯åºäœã®çµæ¶é å
ããäž»ãšããŠè¡šé¢ã¬ãªãŒãæ§é ã§æ±ºãŸãçµæ¶ã®é
åãæé·ã«ç©æ¥µç圹å²ãã¯ããã åèšAppl.Phys.Lett.ã®455é ã«å ±åãããŠãã
åŠãããã€ããããã€ããšããŠãã·ãªã³ã³èãã°
ã©ããªãšãã¿ãã·ãŒã«ååã«æº¶èãããšçµæ¶ç¶è
ã®è¡šé¢çµç¹ãé åã芳å¯ãããªããæããã«ãã°
ã©ããªãšãã¿ãã·ãŒã§ã®SiO2ãã€ããã®æ©èœã¯
SiãšSiO2ãšã®éã®ç±èšåŒµçã®çµæãšããŠåªæå¿
åãäœãåºããŠSiãç°æ¹æ§ã«å°ããçµæ¶åã«ãã
ã¬ãªãŒãæ Œåã«é¢é£ããïŒ100ïŒè¡šé¢çµç¹ãåäž
é åãçããããŠããã æŽã«ãæè¿ã¯ã1980幎ïŒæ10æ¥åºé¡ã®ã¢ã¡ãªã«
ç¹èš±åºé¡138891å·åºé¡ã«ã¯ãçµæ¶ç¶åºäœã®è¡šé¢äž
ã«åœ¢æããã絶çžäœã®åãéããŠã®æçš®åºåïŒç¡
å®åœ¢Siã®æº¶èãååçµïŒã«ãã暪æ¹åãšãã¿ãã·
ãŒæé·ã®éææ³ãé瀺ãããŠãããæé·åæ¢åŸã«
ã·ãŒãç¶ã®çµæ¶ç©ãéè£ãã®ä»ã®æ¹æ³ã§åºäœïŒå
䜿çšã§ããïŒããåé¢ããããã®æ¹æ³ã䟿å®äž
CLEFTæ³ããã®é©çšãCLEFTé©çšãšåŒã¶ã CLEFTæ³ã¯æ¬çºæå®ææã®åœæ¥çã®æ°Žæºã«ãŸ
ããææãªé²æ©æ§ã瀺ããšèããããããé«å質
ã§æ¬ æããªããšãã¿ãã·ãŒãã€ã«ã ã®é£ç¶çç£ãž
ã®ãã®é©çšã«ã¯ããåé¡ãçããŠãããæŽã«ç¹å®
ããã°ãäœããã®çç±ã§æšªæ¹åãšãã¿ãã·ãŒæé·
ãäžé£ç¶ã ãšä»¥åŸã®æé·ã«ã¯åºçºç¹ãšãªãçµæ¶é
åããªãããã®ããã©ã³ãã å€æ¶ç¶ã«æé·ããã®
ã§ãšãã¿ãã·ãŒæé·ã¯ãã¯ããªããªããåŸã€ãŠã
çµæ¶åºäœè¡šé¢äžã«åœ¢æããã絶çžãã¹ã¯äžã®è²«é
è·¯ãéããŠã®ãšãã¿ãã·ãŒãã€ã«ã ã®æšªæ¹åæé·
ã®äžé£ç¶æ§ãæå°ã«ããããã®æ¹æ³ãšè£ 眮ã«å¯Ÿã
ãããŒãºãããã 暪æ¹åæé·ãçžäºã«åºäŒãå Žåãå³ã¡ãäžæ¹å
ã®æšªæ¹åæé·ãå¥æ¹åã®æšªæ¹åæé·ãšåºäŒãæã«
ã¯è»¢äœæ¬ æãçããåŸåãããããšãçºèŠãã
ããããã¯æããã¯ïŒã€ã®çµæ¶ããã³ããåºäŒã€
ãæåµçãããæªãå¿åã«èµ·å ããã ãããåã³ä»ã®çç±ã«ãããæé·äžé£ç¶ãçµæ¶
転äœãæå°ã§ãããæ¯èŒçæäœãç°¡åã§ã³ã¹ãã
å®ãéæ¶è³ªåå°äœææã«ãããŠæšªæ¹åãšãã¿ãã·
ãŒæé·ãéæããæ¹æ³ãšè£ 眮ã®éçºã倧ãã«æãŸ
ããã ãçºæã®é瀺ã æ¬çºæã«ãããŠã¯ãç¡å®åœ¢åã¯å€æ¶è³ªã®åå°äœ
ææã®ãšãã¿ãã·ãŒææãžã®å€åœ¢ã¯å€åœ¢ãã¹ãæ
æã®çµæ¶æž©åºŠããé«ãèç¹ãæã€ããšã奜ãŸãã
湿最å€ã®å±€ã䜿ã€ãŠéæããããã®æ¹¿æœ€å€å±€ã¯å€
圢ãã¹ãåå°äœæãšæ¥è§Šç¶æ ã§é 眮ããããã®å
å°äœæã¯åæ¶ã®çš®æ¶æãšãæ¥è§Šåã³ïŒåã¯é£æ¥ã
ãŠãããâ湿最å€âã¯åå°äœæããã®äžåã¯äžã«
å¯ã«æ¥è§ŠããŠããé¢äžã«æ¡ããç©è³ªåã¯çµæç©ã
æå³ããããã®æ¹¿æœ€å€å±€ã«é¢é£ããçŸè±¡ã®æ£ç¢ºãª
æ§è³ªã¯çŸåšå®å šã«ã¯ç解ãããŠããªããããã®å±€
ã¯ããšãã¿ãã·ãŒæé·äžã«çµæ¶ããã³ãã暪æ¹å
ã«æé·ããéã®åå°äœæã®éå¡åïŒããŒãºååã¯
ããŒã«åïŒã®é²æ¢ã«åœ¹ç«ã€ãšæãããã æé·äžã®åå°äœæã®éå¡åå³ã¡âããŒã«åâã¯
èå³ã¡å±€ã®ç©ºéå³ã¡äžé£ç¶éšã®åå ã«ãªãã®ã§é¿
ããã¹ãã§ãããäžæŠç©ºéãçãããšãšãã¿ãã·
ãŒæé·ïŒçš®æ¶ãšã®é£ç¶æ§ã«åºã¥ãïŒã¯åŠšå®³ãã
ãã æ¬çºæã«ããã湿最å€å±€ã®æ©èœã¯åŸæ¥ã®ã°ã©ã
ãªãšãã¿ãã·ãŒæ³ã®ãšããã§èšåããâãã€ã
ãâãšã¯æ ¹æ¬çã«ç°ãªããåºå¥ããããæ¬çºæã§
ã¯æ¹¿æœ€å€å±€ã®äž»ç®çã¯çµæ¶åãã¹ãææãšçš®æ¶æ
ãšã®éã®è¡šé¢ã®æ¹¿æœ€åã§ãããçš®æ¶æã¯çæçµæ¶
ç¹æ§ã®äž»æ±ºå®å åã§ãããäžæ¹ãã°ã©ããªãšãã¿
ãã·ãŒâãã€ããâã¯â湿最å€âãšããŠæå³ãã
ãŠããã®ã§ã¯ãªããçµæ¶é ååã³æé·ç©è³ªã®çµç¹
ç¹æ§ã«æŽ»çºã«å¯äžããããšãæå³ãããŠããã æ¬çºæã®æ¹æ³ã¯ãåºäœå ã«çš®çµæ¶ãå«ãæè¬å
éšæçš®ã«ããæ¹æ³ã§ãããå°ãåŸã«åèäŸãšããŠ
瀺ãããæçš®åºåã«ãã暪æ¹åãšãã¿ãã·ãŒæé·
ã®æ¹æ³ãšããŠã¯åºäœå€éšããçš®çµæ¶ãæçš®ããæ
è¬å€éšæçš®ã«ããæ¹æ³ãèãããããå€éšæçš®ã«
ããæ¹æ³ã«ãããŠã¯ãæé·ã¯åèšCLEFTæ³ãšå
æ§ã«åºäœã®äžéšã§ã¯ãªãçš®æ¶ããå§ãŸããâçš®æ¶â
ã¯ãšãã¿ãã·ãŒæé·ã®åºçºç¹ãšãªãåæ¶åå°äœæ
ã®æ¬äœã§ãããããããCLEFTæ³ã§ã®åå ¥åæ¶
æãšã¯ç°ãªããå€éšããã®æçš®ã«ããæé·ã¯ãå
æ¶æãžå€æãããéæ¶è³ªæã®å€é¢å³ã¡è¡šé¢äžã«æ
äŸãããåæ¶æé·æã®æ¬äœãå§ç¹ãšããŠéæãã
ããå€éšããæçš®ãããã®æ æ§ã§ã¯çµ¶çžå±€ã«è²«é
è·¯ãèšããŠãã®äžã®åæ¶çš®æ¶æã«å°éãããå¿ èŠ
ã¯ãªããæŽã«ãæé·ã¯å€éšããäžããããçš®æ¶ã
èµ·ç¹ãšããéæ¶æã®é¢ã«ãã€ãŠäžæ¹åã«çµæ¶ãã
ã³ããæé·ãããããšã§éæã§ããããã®æ æ§å
ã³ãè¿œã€ãŠèšèŒããä»æ æ§ã«ãããŠã¯å¹³è¡é£æ¥ã¹
ãã©ã€ã貫éè·¯ã®å Žåãšåæ§ã«çµæ¶ããã³ãã¯é
æ¹åããã®çµæ¶ããã³ããšã¯åºäŒãããšã¯ãªãã
ãããåºäŒãã«èµ·å ããæœåšçãªçµæ¶è»¢äœã¯é¿ã
ãããã
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/254,871 US4371421A (en) | 1981-04-16 | 1981-04-16 | Lateral epitaxial growth by seeded solidification |
US254871 | 1981-04-16 | ||
US35928482A | 1982-03-18 | 1982-03-18 | |
US359284 | 1982-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58500609A JPS58500609A (ja) | 1983-04-21 |
JPH0249276B2 true JPH0249276B2 (ja) | 1990-10-29 |
Family
ID=26944290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57501707A Granted JPS58500609A (ja) | 1981-04-16 | 1982-04-14 | æçš®åºåã«ãã暪æ¹åãšãã¿ãã·âæé· |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0087426B1 (ja) |
JP (1) | JPS58500609A (ja) |
DE (1) | DE3279842D1 (ja) |
WO (1) | WO1982003639A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4461670A (en) * | 1982-05-03 | 1984-07-24 | At&T Bell Laboratories | Process for producing silicon devices |
FR2566964B1 (fr) * | 1984-06-29 | 1986-11-14 | Commissariat Energie Atomique | Procede de fabrication de capteurs a effet hall en couches minces |
GB8504726D0 (en) * | 1985-02-23 | 1985-03-27 | Standard Telephones Cables Ltd | Integrated circuits |
JPS61270812A (ja) * | 1985-05-22 | 1986-12-01 | ãšãã»ãâã»ãã€ãªããã¹ã»ãã«âã€ã©ã³ãã³ãã¢ããªã±ã³ | åå°äœè£ 眮ã®è£œé æ¹æ³ |
US4752590A (en) * | 1986-08-20 | 1988-06-21 | Bell Telephone Laboratories, Incorporated | Method of producing SOI devices |
US5074952A (en) * | 1987-11-13 | 1991-12-24 | Kopin Corporation | Zone-melt recrystallization method and apparatus |
WO1989004387A1 (en) * | 1987-11-13 | 1989-05-18 | Kopin Corporation | Improved zone melt recrystallization method and apparatus |
DE58905580D1 (de) * | 1988-03-24 | 1993-10-21 | Siemens Ag | Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau fÃŒr DÃŒnnschichthalbleiterbauelemente wie Solarzellen. |
DE10344986B4 (de) * | 2003-09-27 | 2008-10-23 | Forschungszentrum Dresden - Rossendorf E.V. | Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten |
DE102005036669A1 (de) * | 2005-08-04 | 2007-02-08 | Forschungszentrum Rossendorf E.V. | Verfahren zur Behandlung von HalbleitersubstratoberflÀchen, die mittels intensiven Lichtimpulsen kurzzeitig aufgeschmolzen werden |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3585088A (en) * | 1968-10-18 | 1971-06-15 | Ibm | Methods of producing single crystals on supporting substrates |
US4174422A (en) * | 1977-12-30 | 1979-11-13 | International Business Machines Corporation | Growing epitaxial films when the misfit between film and substrate is large |
-
1982
- 1982-04-14 DE DE8282901665T patent/DE3279842D1/de not_active Expired
- 1982-04-14 EP EP82901665A patent/EP0087426B1/en not_active Expired
- 1982-04-14 WO PCT/US1982/000465 patent/WO1982003639A1/en active IP Right Grant
- 1982-04-14 JP JP57501707A patent/JPS58500609A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
WO1982003639A1 (en) | 1982-10-28 |
DE3279842D1 (en) | 1989-08-31 |
EP0087426A1 (en) | 1983-09-07 |
EP0087426B1 (en) | 1989-07-26 |
JPS58500609A (ja) | 1983-04-21 |
EP0087426A4 (en) | 1985-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4670088A (en) | Lateral epitaxial growth by seeded solidification | |
US4371421A (en) | Lateral epitaxial growth by seeded solidification | |
US20060113596A1 (en) | Single crystal substrate and method of fabricating the same | |
CA1204044A (en) | Growth of structures based on group iv semiconductor materials | |
JPH0258779B2 (ja) | ||
JPH0249276B2 (ja) | ||
Celler et al. | Seeded recrystallization of thick polysilicon films on oxidized 3âin. wafers | |
US8048784B2 (en) | Methods of manufacturing semiconductor devices including a doped silicon layer | |
KR100695144B1 (ko) | ëšê²°ì ì€ëŠ¬ìœ êž°í ë° ê·ž ì ì¡°ë°©ë² | |
JPS621220A (ja) | æ¬ é¥ãå±åšãããé åã·ãªã³ã³åçµæ¶èã絶çžæ¯æäœäžã«è£œé ããæ¹æ³ | |
JPS6147627A (ja) | åå°äœè£ 眮ã®è£œé æ¹æ³ | |
JP2517330B2 (ja) | ïœïœæ§é ã®åœ¢ææ¹æ³ | |
JPH0236052B2 (ja) | ||
Tamura et al. | Laser-Induced Lateral, Vertically-Seeded Epitaxial Regrowth of Deposited Si Films over Various SiO2 Patterns | |
JPH0354819A (ja) | ïœïœåºæ¿ã®è£œé æ¹æ³ | |
Celler et al. | Lateral epitaxial growth of thick polysilicon films on oxidized 3-inch wafers | |
Poate et al. | Epitaxy of deposited Si | |
JPH0334847B2 (ja) | ||
JPS5893218A (ja) | åå°äœèèæ§é ã®è£œé æ¹æ³ | |
JPH0775223B2 (ja) | åå°äœåçµæ¶å±€ã®è£œé æ¹æ³ | |
Baumgart | Silicon-on-insulator technology by crystallization on quartz substrates | |
JPS61245518A (ja) | ïœïœã·âãæ§é 圢ææ¹æ³ | |
JPH0287519A (ja) | åçµæ¶åå°äœèèã®è£œé æ¹æ³ | |
JPH0243331B2 (ja) | ||
JPH04192322A (ja) | çµæ¶ç©åã®åœ¢ææ¹æ³ |