JPH0149003B2 - - Google Patents
Info
- Publication number
- JPH0149003B2 JPH0149003B2 JP59101775A JP10177584A JPH0149003B2 JP H0149003 B2 JPH0149003 B2 JP H0149003B2 JP 59101775 A JP59101775 A JP 59101775A JP 10177584 A JP10177584 A JP 10177584A JP H0149003 B2 JPH0149003 B2 JP H0149003B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- opening
- semiconductor
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59101775A JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59101775A JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60246622A JPS60246622A (ja) | 1985-12-06 |
| JPH0149003B2 true JPH0149003B2 (OSRAM) | 1989-10-23 |
Family
ID=14309584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59101775A Granted JPS60246622A (ja) | 1984-05-22 | 1984-05-22 | 半導体結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60246622A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758685B2 (ja) * | 1987-01-07 | 1995-06-21 | 工業技術院長 | Soi結晶成長法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054475B2 (ja) * | 1980-11-11 | 1985-11-30 | 株式会社ニチベイ | ブラインドの昇降傾動装置 |
| JPS5996383A (ja) * | 1982-11-19 | 1984-06-02 | 立川ブラインド工業株式会社 | ヘツドボツクス昇降型ブラインドの開閉駆動装置 |
-
1984
- 1984-05-22 JP JP59101775A patent/JPS60246622A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60246622A (ja) | 1985-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5371381A (en) | Process for producing single crystal semiconductor layer and semiconductor device produced by said process | |
| US4670088A (en) | Lateral epitaxial growth by seeded solidification | |
| JPS5939790A (ja) | 単結晶の製造方法 | |
| EP0087426B1 (en) | Lateral epitaxial growth by seeded solidification | |
| JPH0149003B2 (OSRAM) | ||
| JPH0236051B2 (OSRAM) | ||
| JPS6147627A (ja) | 半導体装置の製造方法 | |
| JPS6163018A (ja) | Si薄膜結晶層の製造方法 | |
| JPH0334847B2 (OSRAM) | ||
| JPH0560668B2 (OSRAM) | ||
| JPH0136972B2 (OSRAM) | ||
| JPS63174308A (ja) | 半導体薄膜結晶層の製造方法 | |
| JP2656466B2 (ja) | 半導体基板の製造方法 | |
| JPS61116821A (ja) | 単結晶薄膜の形成方法 | |
| JP2699347B2 (ja) | 半導体基板の製造方法 | |
| JPH04214615A (ja) | 半導体デバイスの製造方法 | |
| JPS59194422A (ja) | 半導体層の単結晶化方法 | |
| JPS60123019A (ja) | 半導体装置の製造方法 | |
| JPS61106484A (ja) | 半導体装置用基板及びその製造方法 | |
| JPS60246620A (ja) | 半導体結晶層の製造方法 | |
| JPH077829B2 (ja) | 半導体装置およびその製法 | |
| JPS61212012A (ja) | Soi構造形成方法 | |
| JPS6233415A (ja) | 単結晶半導体膜の製造方法 | |
| JPS6379953A (ja) | 単結晶薄膜の製造方法 | |
| JPH0834175B2 (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |