JPS6154252B2 - - Google Patents
Info
- Publication number
- JPS6154252B2 JPS6154252B2 JP3373679A JP3373679A JPS6154252B2 JP S6154252 B2 JPS6154252 B2 JP S6154252B2 JP 3373679 A JP3373679 A JP 3373679A JP 3373679 A JP3373679 A JP 3373679A JP S6154252 B2 JPS6154252 B2 JP S6154252B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon
- film
- source
- inter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373679A JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3373679A JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125649A JPS55125649A (en) | 1980-09-27 |
| JPS6154252B2 true JPS6154252B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=12394681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3373679A Granted JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125649A (enrdf_load_stackoverflow) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818965A (ja) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | 半導体装置の製造方法 |
| JPS5799775A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Manufacture of semiconductor device |
| JPS57207376A (en) * | 1981-06-15 | 1982-12-20 | Nec Corp | Manufacture of semiconductor integrated circuit |
| JPS58154270A (ja) * | 1982-03-09 | 1983-09-13 | Toshiba Corp | 半導体装置の製造方法 |
| DE3211761A1 (de) * | 1982-03-30 | 1983-10-06 | Siemens Ag | Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen |
| JPS5941870A (ja) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | 半導体装置の製造方法 |
| JPS59108354A (ja) * | 1982-12-14 | 1984-06-22 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0644572B2 (ja) * | 1983-03-23 | 1994-06-08 | 株式会社東芝 | 半導体装置の製造方法 |
| US4503601A (en) * | 1983-04-18 | 1985-03-12 | Ncr Corporation | Oxide trench structure for polysilicon gates and interconnects |
| JPS59200469A (ja) * | 1983-04-27 | 1984-11-13 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6037777A (ja) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | 半導体装置 |
| JPH0666330B2 (ja) * | 1983-08-10 | 1994-08-24 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JPS60235473A (ja) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1979
- 1979-03-22 JP JP3373679A patent/JPS55125649A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55125649A (en) | 1980-09-27 |