JPS55125649A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS55125649A
JPS55125649A JP3373679A JP3373679A JPS55125649A JP S55125649 A JPS55125649 A JP S55125649A JP 3373679 A JP3373679 A JP 3373679A JP 3373679 A JP3373679 A JP 3373679A JP S55125649 A JPS55125649 A JP S55125649A
Authority
JP
Japan
Prior art keywords
layer
film
poly
metal
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3373679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154252B2 (enrdf_load_stackoverflow
Inventor
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3373679A priority Critical patent/JPS55125649A/ja
Publication of JPS55125649A publication Critical patent/JPS55125649A/ja
Publication of JPS6154252B2 publication Critical patent/JPS6154252B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP3373679A 1979-03-22 1979-03-22 Production of semiconductor integrated circuit Granted JPS55125649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3373679A JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3373679A JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS55125649A true JPS55125649A (en) 1980-09-27
JPS6154252B2 JPS6154252B2 (enrdf_load_stackoverflow) 1986-11-21

Family

ID=12394681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3373679A Granted JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55125649A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS57207376A (en) * 1981-06-15 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS58154270A (ja) * 1982-03-09 1983-09-13 Toshiba Corp 半導体装置の製造方法
JPS58176975A (ja) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト 集積ｍｏｓ電界効果トランジスタ回路の製造方法
JPS5941870A (ja) * 1982-08-25 1984-03-08 Toshiba Corp 半導体装置の製造方法
JPS59108354A (ja) * 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS59172775A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体装置とその製造方法
JPS59200469A (ja) * 1983-04-27 1984-11-13 Toshiba Corp 半導体装置の製造方法
JPS6037777A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS6037776A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS60501083A (ja) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド 半導体装置の製造方法
JPS60235473A (ja) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS57207376A (en) * 1981-06-15 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS58154270A (ja) * 1982-03-09 1983-09-13 Toshiba Corp 半導体装置の製造方法
JPS58176975A (ja) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト 集積ｍｏｓ電界効果トランジスタ回路の製造方法
JPS5941870A (ja) * 1982-08-25 1984-03-08 Toshiba Corp 半導体装置の製造方法
JPS59108354A (ja) * 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS59172775A (ja) * 1983-03-23 1984-09-29 Toshiba Corp 半導体装置とその製造方法
JPS60501083A (ja) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド 半導体装置の製造方法
JPS59200469A (ja) * 1983-04-27 1984-11-13 Toshiba Corp 半導体装置の製造方法
JPS6037777A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS6037776A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS60235473A (ja) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6154252B2 (enrdf_load_stackoverflow) 1986-11-21

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