JPS55125649A - Production of semiconductor integrated circuit - Google Patents

Production of semiconductor integrated circuit

Info

Publication number
JPS55125649A
JPS55125649A JP3373679A JP3373679A JPS55125649A JP S55125649 A JPS55125649 A JP S55125649A JP 3373679 A JP3373679 A JP 3373679A JP 3373679 A JP3373679 A JP 3373679A JP S55125649 A JPS55125649 A JP S55125649A
Authority
JP
Japan
Prior art keywords
layer
film
poly
metal
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3373679A
Other languages
Japanese (ja)
Other versions
JPS6154252B2 (en
Inventor
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3373679A priority Critical patent/JPS55125649A/en
Publication of JPS55125649A publication Critical patent/JPS55125649A/en
Publication of JPS6154252B2 publication Critical patent/JPS6154252B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To improve the performance of an IC without changing a conventional method of production thereof to a great extent, by converting the surfaces of a poly- Si layer of a high resistance and a shallow inpurity diffusion layer of a high resistance into thin metal silicide layers of a low resistance. CONSTITUTION:A channel stopper 22, a field oxide film 23 and a gate oxide film 24 are provided on a p-type Si substrate 21. A Si3N4 mask is then provided to selectively form doped poly-Si layers 25G, 25C. The side surface of the oxide films are covered with thermal oxidization films 27. The oxide film 24 is then removed to form a n<+> layer by using the layer 25G as a mask. The Si3N4 mask is removed to form a metal layer 31. The surfaces of the poly-Si and n<+> layers are heat-treated to form thin metal silicide layers 32 of a low resistance. The metal film 31 is then selectively etched to complete a semiconductor IC. When Pt or Ni is used for the metal in the metal film, an extremely thin film having an extremely low resistance value can be obtained. Since this film is very thin, the thickness of the poly-Si layer can be reduced. In addition, breaking of wire never occurs in a higher-order wiring. Since the wiring resistance is decreased to a remarkable extent, the IC can be operated at a high speed.
JP3373679A 1979-03-22 1979-03-22 Production of semiconductor integrated circuit Granted JPS55125649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3373679A JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3373679A JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS55125649A true JPS55125649A (en) 1980-09-27
JPS6154252B2 JPS6154252B2 (en) 1986-11-21

Family

ID=12394681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3373679A Granted JPS55125649A (en) 1979-03-22 1979-03-22 Production of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55125649A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS57207376A (en) * 1981-06-15 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5818965A (en) * 1981-07-28 1983-02-03 Toshiba Corp Manufacture of semiconductor device
JPS58154270A (en) * 1982-03-09 1983-09-13 Toshiba Corp Manufacture of semiconductor device
JPS58176975A (en) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
JPS59108354A (en) * 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59172775A (en) * 1983-03-23 1984-09-29 Toshiba Corp Semiconductor device and manufacture thereof
JPS59200469A (en) * 1983-04-27 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS6037776A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Manufacture of semiconductor device
JPS6037777A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS60235473A (en) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5799775A (en) * 1980-12-12 1982-06-21 Toshiba Corp Manufacture of semiconductor device
JPS57207376A (en) * 1981-06-15 1982-12-20 Nec Corp Manufacture of semiconductor integrated circuit
JPS5818965A (en) * 1981-07-28 1983-02-03 Toshiba Corp Manufacture of semiconductor device
JPS58154270A (en) * 1982-03-09 1983-09-13 Toshiba Corp Manufacture of semiconductor device
JPH0576176B2 (en) * 1982-03-09 1993-10-22 Tokyo Shibaura Electric Co
JPH0547979B2 (en) * 1982-03-30 1993-07-20 Siemens Ag
JPS58176975A (en) * 1982-03-30 1983-10-17 シ−メンス・アクチエンゲゼルシヤフト Method of producing integrated mos field effect transistor circuit
JPS5941870A (en) * 1982-08-25 1984-03-08 Toshiba Corp Manufacture of semiconductor device
JPH0576177B2 (en) * 1982-08-25 1993-10-22 Tokyo Shibaura Electric Co
JPS59108354A (en) * 1982-12-14 1984-06-22 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS59172775A (en) * 1983-03-23 1984-09-29 Toshiba Corp Semiconductor device and manufacture thereof
JPS60501083A (en) * 1983-04-18 1985-07-11 エヌ・シー・アール・インターナショナル・インコーポレイテッド Manufacturing method of semiconductor device
JPS59200469A (en) * 1983-04-27 1984-11-13 Toshiba Corp Manufacture of semiconductor device
JPS6037777A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Semiconductor device
JPS6037776A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Manufacture of semiconductor device
JPS60235473A (en) * 1984-05-08 1985-11-22 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6154252B2 (en) 1986-11-21

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