JPS55125649A - Production of semiconductor integrated circuit - Google Patents
Production of semiconductor integrated circuitInfo
- Publication number
- JPS55125649A JPS55125649A JP3373679A JP3373679A JPS55125649A JP S55125649 A JPS55125649 A JP S55125649A JP 3373679 A JP3373679 A JP 3373679A JP 3373679 A JP3373679 A JP 3373679A JP S55125649 A JPS55125649 A JP S55125649A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- poly
- metal
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To improve the performance of an IC without changing a conventional method of production thereof to a great extent, by converting the surfaces of a poly- Si layer of a high resistance and a shallow inpurity diffusion layer of a high resistance into thin metal silicide layers of a low resistance. CONSTITUTION:A channel stopper 22, a field oxide film 23 and a gate oxide film 24 are provided on a p-type Si substrate 21. A Si3N4 mask is then provided to selectively form doped poly-Si layers 25G, 25C. The side surface of the oxide films are covered with thermal oxidization films 27. The oxide film 24 is then removed to form a n<+> layer by using the layer 25G as a mask. The Si3N4 mask is removed to form a metal layer 31. The surfaces of the poly-Si and n<+> layers are heat-treated to form thin metal silicide layers 32 of a low resistance. The metal film 31 is then selectively etched to complete a semiconductor IC. When Pt or Ni is used for the metal in the metal film, an extremely thin film having an extremely low resistance value can be obtained. Since this film is very thin, the thickness of the poly-Si layer can be reduced. In addition, breaking of wire never occurs in a higher-order wiring. Since the wiring resistance is decreased to a remarkable extent, the IC can be operated at a high speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3373679A JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3373679A JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55125649A true JPS55125649A (en) | 1980-09-27 |
JPS6154252B2 JPS6154252B2 (en) | 1986-11-21 |
Family
ID=12394681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3373679A Granted JPS55125649A (en) | 1979-03-22 | 1979-03-22 | Production of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55125649A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799775A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Manufacture of semiconductor device |
JPS57207376A (en) * | 1981-06-15 | 1982-12-20 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPS5818965A (en) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS58154270A (en) * | 1982-03-09 | 1983-09-13 | Toshiba Corp | Manufacture of semiconductor device |
JPS58176975A (en) * | 1982-03-30 | 1983-10-17 | シ−メンス・アクチエンゲゼルシヤフト | Method of producing integrated mos field effect transistor circuit |
JPS5941870A (en) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | Manufacture of semiconductor device |
JPS59108354A (en) * | 1982-12-14 | 1984-06-22 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59172775A (en) * | 1983-03-23 | 1984-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS59200469A (en) * | 1983-04-27 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPS6037776A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS6037777A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Semiconductor device |
JPS60501083A (en) * | 1983-04-18 | 1985-07-11 | エヌ・シー・アール・インターナショナル・インコーポレイテッド | Manufacturing method of semiconductor device |
JPS60235473A (en) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1979
- 1979-03-22 JP JP3373679A patent/JPS55125649A/en active Granted
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5799775A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Manufacture of semiconductor device |
JPS57207376A (en) * | 1981-06-15 | 1982-12-20 | Nec Corp | Manufacture of semiconductor integrated circuit |
JPS5818965A (en) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | Manufacture of semiconductor device |
JPS58154270A (en) * | 1982-03-09 | 1983-09-13 | Toshiba Corp | Manufacture of semiconductor device |
JPH0576176B2 (en) * | 1982-03-09 | 1993-10-22 | Tokyo Shibaura Electric Co | |
JPH0547979B2 (en) * | 1982-03-30 | 1993-07-20 | Siemens Ag | |
JPS58176975A (en) * | 1982-03-30 | 1983-10-17 | シ−メンス・アクチエンゲゼルシヤフト | Method of producing integrated mos field effect transistor circuit |
JPS5941870A (en) * | 1982-08-25 | 1984-03-08 | Toshiba Corp | Manufacture of semiconductor device |
JPH0576177B2 (en) * | 1982-08-25 | 1993-10-22 | Tokyo Shibaura Electric Co | |
JPS59108354A (en) * | 1982-12-14 | 1984-06-22 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS59172775A (en) * | 1983-03-23 | 1984-09-29 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS60501083A (en) * | 1983-04-18 | 1985-07-11 | エヌ・シー・アール・インターナショナル・インコーポレイテッド | Manufacturing method of semiconductor device |
JPS59200469A (en) * | 1983-04-27 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPS6037777A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Semiconductor device |
JPS6037776A (en) * | 1983-08-10 | 1985-02-27 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS60235473A (en) * | 1984-05-08 | 1985-11-22 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6154252B2 (en) | 1986-11-21 |
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