JPS6154254B2 - - Google Patents
Info
- Publication number
- JPS6154254B2 JPS6154254B2 JP8425879A JP8425879A JPS6154254B2 JP S6154254 B2 JPS6154254 B2 JP S6154254B2 JP 8425879 A JP8425879 A JP 8425879A JP 8425879 A JP8425879 A JP 8425879A JP S6154254 B2 JPS6154254 B2 JP S6154254B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon nitride
- conductivity type
- region
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 112
- 239000012535 impurity Substances 0.000 claims description 69
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 65
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 42
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 229910021332 silicide Inorganic materials 0.000 claims description 21
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 61
- 238000009792 diffusion process Methods 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8425879A JPS568849A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8425879A JPS568849A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS568849A JPS568849A (en) | 1981-01-29 |
| JPS6154254B2 true JPS6154254B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=13825421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8425879A Granted JPS568849A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS568849A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5818965A (ja) * | 1981-07-28 | 1983-02-03 | Toshiba Corp | 半導体装置の製造方法 |
| JP2534508B2 (ja) * | 1987-08-11 | 1996-09-18 | セイコーエプソン株式会社 | 高耐圧ｍｏｓ型半導体装置の製造方法 |
| JP3410495B2 (ja) * | 1992-09-30 | 2003-05-26 | 東レ・ダウコーニング・シリコーン株式会社 | 表面塗布剤 |
-
1979
- 1979-07-03 JP JP8425879A patent/JPS568849A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS568849A (en) | 1981-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2598481B2 (ja) | 半導体装置及びその自己整列金属化部分の形成方法 | |
| KR960001602B1 (ko) | 집적회로 제조방법 | |
| US4505027A (en) | Method of making MOS device using metal silicides or polysilicon for gates and impurity source for active regions | |
| EP0066097A2 (en) | Silicide contacts for CMOS devices | |
| US4476482A (en) | Silicide contacts for CMOS devices | |
| EP0190928A2 (en) | Integrated MOS transistor and method of manufacturing it | |
| GB1567197A (en) | Methods of manufacturing semiconductor devices | |
| US3936865A (en) | Semiconductor devices having conductor tracks at different levels and interconnections therebetween | |
| JPH04229647A (ja) | 自己整合けい素化合物化ｍｏｓ工法による精密抵抗体の製造方法 | |
| JPS62162362A (ja) | Ｍｏｓ型集積回路及びその製造方法 | |
| JPH0586663B2 (enrdf_load_stackoverflow) | ||
| US4549199A (en) | Semiconductor device providing a contact structure which can be miniaturized | |
| JPS6154252B2 (enrdf_load_stackoverflow) | ||
| JPH0654795B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| US4812417A (en) | Method of making self aligned external and active base regions in I.C. processing | |
| US4883772A (en) | Process for making a self-aligned silicide shunt | |
| JPS6154254B2 (enrdf_load_stackoverflow) | ||
| JPS6054792B2 (ja) | 半導体装置 | |
| US6707105B2 (en) | Semiconductor device for limiting leakage current | |
| GB2152283A (en) | Gate protection arrangement for a semiconductor device | |
| JPS6154253B2 (enrdf_load_stackoverflow) | ||
| JPS6237960A (ja) | 読み出し専用半導体記憶装置の製造方法 | |
| EP0264309B1 (en) | Self-aligned base shunt for transistor | |
| EP0141571A2 (en) | High performance two layer metal cmos process using a reduced number of masks | |
| JPS6057949A (ja) | 半導体装置 |