JPS568849A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS568849A
JPS568849A JP8425879A JP8425879A JPS568849A JP S568849 A JPS568849 A JP S568849A JP 8425879 A JP8425879 A JP 8425879A JP 8425879 A JP8425879 A JP 8425879A JP S568849 A JPS568849 A JP S568849A
Authority
JP
Japan
Prior art keywords
film
wiring
films
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8425879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154254B2 (enrdf_load_stackoverflow
Inventor
Mitsutaka Morimoto
Hiroki Muta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8425879A priority Critical patent/JPS568849A/ja
Publication of JPS568849A publication Critical patent/JPS568849A/ja
Publication of JPS6154254B2 publication Critical patent/JPS6154254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP8425879A 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit Granted JPS568849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8425879A JPS568849A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8425879A JPS568849A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS568849A true JPS568849A (en) 1981-01-29
JPS6154254B2 JPS6154254B2 (enrdf_load_stackoverflow) 1986-11-21

Family

ID=13825421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8425879A Granted JPS568849A (en) 1979-07-03 1979-07-03 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS568849A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS6442862A (en) * 1987-08-11 1989-02-15 Seiko Epson Corp Manufacture of high-withstand voltage mos semiconductor device
US5364923A (en) * 1992-09-30 1994-11-15 Dow Corning Toray Silicone Co., Ltd. Organopolysiloxane graft epoxy resins and a method for the preparation thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818965A (ja) * 1981-07-28 1983-02-03 Toshiba Corp 半導体装置の製造方法
JPS6442862A (en) * 1987-08-11 1989-02-15 Seiko Epson Corp Manufacture of high-withstand voltage mos semiconductor device
US5364923A (en) * 1992-09-30 1994-11-15 Dow Corning Toray Silicone Co., Ltd. Organopolysiloxane graft epoxy resins and a method for the preparation thereof

Also Published As

Publication number Publication date
JPS6154254B2 (enrdf_load_stackoverflow) 1986-11-21

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