JPS6154253B2 - - Google Patents
Info
- Publication number
- JPS6154253B2 JPS6154253B2 JP8425779A JP8425779A JPS6154253B2 JP S6154253 B2 JPS6154253 B2 JP S6154253B2 JP 8425779 A JP8425779 A JP 8425779A JP 8425779 A JP8425779 A JP 8425779A JP S6154253 B2 JPS6154253 B2 JP S6154253B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- region
- nitride film
- layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 89
- 239000012535 impurity Substances 0.000 claims description 64
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 59
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 46
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 27
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8425779A JPS568848A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8425779A JPS568848A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS568848A JPS568848A (en) | 1981-01-29 |
| JPS6154253B2 true JPS6154253B2 (enrdf_load_stackoverflow) | 1986-11-21 |
Family
ID=13825394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8425779A Granted JPS568848A (en) | 1979-07-03 | 1979-07-03 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS568848A (enrdf_load_stackoverflow) |
-
1979
- 1979-07-03 JP JP8425779A patent/JPS568848A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS568848A (en) | 1981-01-29 |